2025-11-20T19:10:15.875436

Atomic layer etching of SiO$_2$ using sequential SF$_6$ gas and Ar plasma

Peng, Venugopal, Blick et al.

In the relentless pursuit of advancing semiconductor technologies, the demand for atomic layer processes has given rise to innovative processes, which have already played a significant role in the continued miniaturization features. Among these, atomic layer etching (ALE) is gaining increasing attention, offering precise control over material removal at the atomic level. Despite some thermal ALE achieved sub-nm etching controllability, the currently practical ALE processes that involve plasmas steps often suffer from high etch rates due to the scarcity of highly synergistic ALE half-reactions. To overcome this limitation, we developed an ALE process of silicon dioxide (SiO$_2$) on a silicon wafer using sequential pure sulfur hexafluoride (SF6$_6$ gas exposure and argon (Ar) plasma etching near room temperature, achieving a stable and consistent etching rate of approximately 1.4 Ã/cycle. In this process, neither of the two half-cycle reactions alone produces etching effects, and etching only occurs when the two are repeated in sequence, which means a 100% synergy. The identification of temperature and plasma power windows further substantiates the high synergy of our ALE process. Moreover, detailed morphology characterization over multiple cycles reveals a directional etching effect. This study provides a reliable, reproducible, and highly controllable ALE process for SiO$_2$ etching, which is promising for nanofabrication processes.

academic

Atomic layer etching of SiO $_2$ using sequential SF $_6$ gas and Ar plasma

基本信息

论文ID: 2412.20653
标题: Atomic layer etching of SiO $_2$ using sequential SF $_6$ gas and Ar plasma
作者: Jun Peng, Rakshith Venugopal, Robert Blick, Robert Zierold
分类: cond-mat.mtrl-sci (凝聚态物理-材料科学)
机构: 汉堡大学混合纳米结构中心，德国电子同步加速器研究所(DESY)
论文链接: https://arxiv.org/abs/2412.20653

摘要

随着半导体技术的不断发展，对原子层工艺的需求催生了创新工艺，这些工艺在持续的器件小型化中发挥了重要作用。其中，原子层刻蚀(ALE)因其在原子级别上对材料去除的精确控制而受到越来越多的关注。尽管一些热ALE实现了亚纳米刻蚀可控性，但目前涉及等离子体步骤的实用ALE工艺由于缺乏高度协同的ALE半反应而存在刻蚀速率过高的问题。为了克服这一限制，本研究开发了一种在室温附近使用连续六氟化硫(SF $_6$ )气体暴露和氩(Ar)等离子体刻蚀硅晶圆上二氧化硅(SiO $_2$ )的ALE工艺，实现了约1.4 Å/周期的稳定一致刻蚀速率。在此工艺中，两个半周期反应单独都不产生刻蚀效果，只有当两者按顺序重复时才发生刻蚀，这意味着100%的协同效应。

研究背景与动机

问题定义

核心问题: 现有的等离子体辅助原子层刻蚀(ALE)工艺存在刻蚀速率过高和协同效应不足的问题，难以实现原子级精确控制。
重要性:
- 随着摩尔定律接近极限，半导体制造需要更精确的原子级加工技术
- ALE在10nm技术节点的逻辑器件中已有应用
- 量子器件等新兴纳米电子器件对精确刻蚀的需求日益增长
现有方法局限性:
- 热ALE虽然可实现亚纳米控制，但各向同性刻蚀特性限制了应用
- 等离子体ALE虽有良好的方向性，但协同效应弱(~80%)，刻蚀速率过高
- 缺乏高度协同的ALE半反应
研究动机: 开发一种兼具热ALE精确性和等离子体ALE方向性的SiO $_2$ 刻蚀工艺，实现100%协同效应和原子级控制。