2025-11-22T10:55:16.122654

A large spin-splitting altermagnet designed from the hydroxylated MBene monolayer

Yang, Wang, Dong

The development of altermagnets is fundamentally important for advancing spintronic device technology, but remains unpractical for the weak spin splitting in most cases, especially in two-dimensional materials. Based on spin group symmetry analysis and first-principles calculations, a novel hydroxyl rotation strategy in collinear antiferromagnets has been proposed to design altermagnets. This approach achieves a large chirality-reversible spin splitting exceeding $1130$ meV in $Î±_{60}$-Mn$_2$B$_2$(OH)$_2$ monolayer. The system also exhibits intrinsic features of a node-line semimetal in the absence of spin-orbit coupling. Besides, the angles of hydroxyl groups serve as the primary order parameter, which can switch on/off the altermagnetism coupled with the ferroelastic mechanism. The corresponding magnetocrystalline anisotropy have also been modulated. Moreover, an interesting spin-related transport property with the spin-polarized conductivity of 10$^{19}$ $Î©^{-1}m^{-1}s^{-1}$ also emerges. These findings uncover the hydroxyl rotation strategy as a versatile tool for designing altermagnetic node-line semimetals and opening new avenues for achieving exotic chemical and physical characteristics associated with large spin splitting.

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A large spin-splitting altermagnet designed from the hydroxylated MBene monolayer

基本信息

论文ID: 2510.14174
标题: A large spin-splitting altermagnet designed from the hydroxylated MBene monolayer
作者: Xinyu Yang, Shan-Shan Wang*, Shuai Dong*
分类: cond-mat.mtrl-sci cond-mat.mes-hall
发表时间: 2025年10月16日 (arXiv预印本)
论文链接: https://arxiv.org/abs/2510.14174

摘要

本研究针对自旋电子学器件技术中的关键问题——二维材料中自旋劈裂普遍较弱的限制，提出了一种新颖的羟基旋转策略来设计交替磁体(altermagnets)。基于自旋群对称性分析和第一性原理计算，该方法在α₆₀-Mn₂B₂(OH)₂单分子层中实现了超过1130 meV的大手性可逆自旋劈裂。该系统在无自旋轨道耦合条件下表现出节线半金属的本征特征。羟基角度作为主要序参量，可通过铁弹性机制开关交替磁性。研究还发现了自旋极化电导率可达10¹⁹ Ω⁻¹m⁻¹s⁻¹的有趣自旋相关输运性质。

研究背景与动机

问题定义

核心问题: 传统二维磁性材料中，铁磁体存在杂散磁场和GHz级速度限制，反铁磁体虽具有超快THz自旋动力学但难以控制，而现有交替磁体的自旋劈裂效应普遍较弱。
重要性: 交替磁体作为结合非相对论自旋劈裂和零净磁化的新型磁性材料，为自旋电子学器件提供了理想平台，但其在二维材料中的实现仍面临挑战。
现有方法局限性:
- 基于范德华相互作用的双分子层交替磁体结构脆弱
- 层间耦合较弱导致能带劈裂效应不明显
- 缺乏有效的设计策略实现大自旋劈裂
研究动机: 开发非范德华材料体系中的交替磁体设计新策略，特别是利用MBene材料的丰富结构多样性，通过表面终端基团旋转实现强自旋劈裂效应。