2025-11-13T22:10:11.346281

Comparative Analysis of THz Signal Emission from SiO$_2$/CoFeB/Metal Heterostructures: Wideband and High-Frequency THz Signal Advantage of PtBi-based Emitter

Winkel, Parvini, Stiewe et al.
Spintronic THz emitters have attracted much attention due to their desirable properties, such as affordability, ultra-wideband capability, high efficiency, and tunable polarization. In this study, we investigate the characteristics of THz signals, including their frequency, bandwidth, and amplitude, emitted from a series of heterostructures with ferromagnetic (FM) and nonmagnetic (NM) materials. The FM layer consists of a wedge-shaped CoFeB layer with a thickness of 0 to 5 nm, while the NM materials include various metals such as Pt, Au, W, Ru, Pt$_{\%92}$Bi$_{\%8}$, and Ag$_{\%90}$Bi$_{\%10}$ alloys. Our experiments show that the emitter with Pt-NM layer has the highest amplitude of the emitted THz signal. However, the PtBi-based emitter exhibits a higher central THz peak and wider bandwidth, making it a promising candidate for broadband THz emitters. These results pave the way for further exploration of the specific compositions of Pt$_{1-x}$Bi$_{x}$ for THz emitter design, especially with the goal of generating higher frequency and wider bandwidth THz signals. These advances hold significant potential for applications in various fields such as high-resolution imaging, spectroscopy, communications, medical diagnostics, and more.
academic

Comparative Analysis of THz Signal Emission from SiO2_2/CoFeB/Metal Heterostructures: Wideband and High-Frequency THz Signal Advantage of PtBi-based Emitter

Basic Information

  • Paper ID: 2307.02232
  • Title: Comparative Analysis of THz Signal Emission from SiO2_2/CoFeB/Metal Heterostructures: Wideband and High-Frequency THz Signal Advantage of PtBi-based Emitter
  • Authors: Tristan Joachim Winkel, Tahereh Sadat Parvini, Finn-Frederik Stiewe, Jakob Walowski, Farshad Moradi, Markus Münzenberg
  • Classification: physics.optics
  • Publication Date: July 6, 2023
  • Paper Link: https://arxiv.org/abs/2307.02232

Abstract

Spintronic terahertz emitters have garnered considerable attention due to their economic viability, ultra-wideband capability, high efficiency, and tunable polarization characteristics. This study investigates the terahertz signal properties emitted from ferromagnetic (FM) and non-magnetic (NM) material heterostructures, including frequency, bandwidth, and amplitude. The FM layer comprises a wedge-shaped CoFeB layer with thickness ranging from 0-5 nm, while the NM materials include various metals such as Pt, Au, W, Ru, Pt92_{92}Bi8_8, and Ag90_{90}Bi10_{10} alloys. Experimental results demonstrate that Pt-NM layer emitters exhibit the highest terahertz signal amplitude, while PtBi-based emitters demonstrate higher central terahertz peak frequencies and broader bandwidth, positioning them as promising candidates for wideband terahertz emitters.

Research Background and Motivation

Research Questions

This study aims to address the performance optimization of spintronic terahertz emitters, particularly how to enhance the frequency, bandwidth, and amplitude characteristics of terahertz signals through material selection and structural design.

Significance

  1. Technical Requirements: Terahertz waves have broad application potential in materials science, biology, and medicine, including spectroscopy, imaging, and communications
  2. Device Advantages: Spintronic terahertz emitters offer cost-effectiveness, ultra-wideband capability, and high efficiency compared to conventional emitters
  3. Application Prospects: High-resolution imaging, spectroscopy, communications, and medical diagnostics require high-frequency wideband terahertz signals

Existing Limitations

Conventional terahertz emitters face limitations in frequency range, bandwidth, and efficiency, necessitating optimization of heterostructure material combinations to overcome performance bottlenecks.

Research Motivation

Based on the physical mechanisms of the spin Hall effect and inverse spin Hall effect, this work systematically compares the effects of different non-magnetic layer materials on terahertz emission characteristics to identify optimal material combinations.

Core Contributions

  1. Systematic Material Comparison: First comprehensive comparative analysis of multiple non-magnetic layer materials (Pt, Au, W, Ru, and PtBi, AgBi alloys) in terahertz emission
  2. Thickness Optimization Discovery: Identified a critical CoFeB layer thickness of 2 nm, beyond which terahertz signal amplitude saturates
  3. PtBi Alloy Advantages: Discovered that while PtBi-based emitters exhibit 50% lower amplitude than pure Pt, they demonstrate higher central frequency (~0.3 THz shift) and broader bandwidth (~0.35 THz)
  4. Theoretical Mechanism Elucidation: Analyzed conductivity and impedance characteristics of different materials using terahertz time-domain spectroscopy, revealing the physical mechanisms underlying performance differences
  5. Application Guidance: Provided experimental evidence and theoretical guidance for material design of high-frequency wideband terahertz emitters

Methodology Details

Task Definition

Investigation of terahertz emission characteristics from different heterostructures SiO2_2/CoFeB/NM under femtosecond laser excitation, optimizing signal amplitude, frequency, and bandwidth.

Experimental Architecture

Sample Preparation

  1. Substrate: Fused silica (SiO2_2) substrate
  2. Ferromagnetic Layer: Wedge-shaped Co40_{40}Fe40_{40}B20_{20} layer with thickness 0-5 nm, prepared via magnetron sputtering
  3. Non-magnetic Layer: Including pure metals (Pt: 2, 3, 4 nm; W: 2 nm; Au: 2 nm; Ru: 4 nm) and alloys (Pt92_{92}Bi8_8: 2 nm; Ag90_{90}Bi10_{10}: 2 nm), prepared via electron beam evaporation

Measurement System

  1. Excitation Source: Femtosecond laser pulses (center wavelength ~810 nm, pulse width 40 fs, repetition rate 80 MHz)
  2. Detector: Commercial low-temperature-grown GaAs (LT-GaAs) Auston switch with bandwidth >4 THz
  3. Scanning Technique: Two-dimensional motorized stage enabling position-dependent terahertz spectroscopic measurements

Physical Mechanisms

Terahertz Emission Principle

Terahertz emission mechanism based on the inverse spin Hall effect (ISHE):

ETHz=AFdNM+dFMj0stFMNMλNMtanhdNMλNMθSHeZ(ω)E_{THz} = \frac{A \cdot F}{d_{NM} + d_{FM}} \cdot j_0^s \cdot t_{FM}^{NM} \cdot \lambda_{NM} \cdot \tanh\frac{d_{NM}}{\lambda_{NM}} \cdot \theta_{SH} \cdot e^{Z(\omega)}

Where each term represents:

  • Pump pulse absorption
  • Spin current generation
  • Spin-to-charge current conversion
  • Charge current-to-electric field conversion

Key Parameters

  • θSH\theta_{SH}: Spin Hall angle
  • λNM\lambda_{NM}: Spin current relaxation length in the non-magnetic layer
  • Z(ω)=Z0n1+n2+Z0GZ(\omega) = \frac{Z_0}{n_1+n_2+Z_0G}: Frequency-dependent impedance

Technical Innovations

  1. Wedge Structure Design: Continuous thickness variation of CoFeB layer enables systematic study of thickness effects on a single sample
  2. Multi-material Comparison: Simultaneous investigation of pure metals and alloy materials, revealing the impact of alloying on terahertz performance
  3. Terahertz Time-Domain Spectroscopy Analysis: Quantitative analysis of frequency-dependent conductivity and impedance characteristics using the Tinkham formula

Experimental Setup

Sample Parameters

  • CoFeB Wedge Layer: 0-5 nm thickness gradient
  • Non-magnetic Layer Thickness: Pt (2, 3, 4 nm), W (2 nm), Au (2 nm), Ru (4 nm), PtBi (2 nm), AgBi (2 nm)
  • Substrate: 500 μm thick fused silica

Measurement Conditions

  • Pump Power Density: 0.8±0.2 mJ/cm²
  • Applied Magnetic Field: 10 mT
  • Detection Bandwidth: >4 THz

Characterization Techniques

  1. Magneto-Optical Kerr Effect: Determination of CoFeB layer thickness distribution
  2. Terahertz Time-Domain Spectroscopy: Measurement of material conductivity and impedance
  3. Two-Dimensional Scanning: Acquisition of position-time-dependent terahertz signals

Experimental Results

Main Results

Thickness Dependence

  • Critical Thickness: CoFeB layer at 2 nm thickness achieves maximum terahertz signal amplitude
  • Saturation Behavior: Signal amplitude saturates beyond 2 nm, attributed to structural defects, electron scattering, and increased resistance

Material Performance Comparison

NM Layer MaterialAmplitude aVsCentral Frequency THzBandwidth Characteristics
Pt (2 nm)46.350.75Baseline
Pt (3 nm)36.020.73Narrower
Pt (4 nm)30.830.71Narrower
PtBi (2 nm)22.901.04Widest (~0.35 THz)
W (2 nm)-13.270.84Moderate

Key Findings

  1. Amplitude Performance: Pt (2 nm) emitter exhibits the highest terahertz amplitude
  2. Frequency Advantage: PtBi emitter central frequency is 0.3 THz higher than Pt
  3. Bandwidth Advantage: PtBi emitter demonstrates the widest terahertz bandwidth

Conductivity Analysis

Pt Thickness Effect

Drude model fitting reveals:

  • Plasma Frequency: Increases with thickness (ωp,Pt(2)=0.19×1016\omega_{p,Pt(2)} = 0.19 \times 10^{16} Hz → ωp,Pt(4)=0.36×1016\omega_{p,Pt(4)} = 0.36 \times 10^{16} Hz)
  • Scattering Time: Decreases with thickness (τPt(2)=52\tau_{Pt(2)} = 52 fs → τPt(4)=23\tau_{Pt(4)} = 23 fs)
  • Impedance Relationship: ZPt(2)>ZPt(3)>ZPt(4)|Z_{Pt(2)}| > |Z_{Pt(3)}| > |Z_{Pt(4)}|

PtBi Anomalous Behavior

PtBi alloy exhibits unique conductivity characteristics:

  • Real part conductivity comparable to Pt (2 nm)
  • Negative imaginary part conductivity (Im[σPtBi]=aω\text{Im}[\sigma_{PtBi}] = -a\omega), unexplainable by simple Drude model
  • Spin-to-charge conversion efficiency twice that of pure Pt

Spintronic Terahertz Emission

  1. Fundamental Theory: Terahertz emission mechanisms based on spin Hall effect and inverse spin Hall effect
  2. Materials Research: Spintronic properties of heavy metal/ferromagnetic metal heterostructures
  3. Device Optimization: Optimization of terahertz emission performance through material selection and structural design

Contributions of This Work

Compared to existing research, this work provides the first systematic comparison of multiple alloy materials in terahertz emission, particularly discovering the advantages of PtBi alloys in high-frequency wideband applications.

Conclusions and Discussion

Main Conclusions

  1. Optimal Thickness: CoFeB layer thickness of 2 nm represents the optimal configuration for terahertz emission
  2. Material Selection: Pure Pt provides maximum amplitude, while PtBi alloy provides optimal frequency and bandwidth performance
  3. Performance Trade-off: A trade-off exists between amplitude and bandwidth, requiring material selection based on application requirements

Limitations

  1. Mechanism Understanding: The anomalous conductivity behavior of PtBi alloy requires deeper theoretical investigation
  2. Composition Optimization: Systematic study of different compositional ratios in Pt1x_{1-x}Bix_x remains unexplored
  3. Temperature Effects: Temperature dependence of material performance not considered

Future Directions

  1. Composition Tuning: Systematic investigation of terahertz emission characteristics for different Pt1x_{1-x}Bix_x alloy compositions
  2. Theoretical Modeling: Development of more comprehensive theoretical models to explain anomalous behavior of PtBi alloys
  3. Device Integration: Application of optimized material combinations to practical terahertz devices

In-Depth Evaluation

Strengths

  1. Systematic Approach: Comprehensive comparison of terahertz emission performance across multiple materials
  2. Rigorous Experimentation: Employs wedge structure design and high-precision measurement techniques
  3. Clear Mechanisms: Elucidates physical mechanisms through combination of theoretical models and experimental data
  4. Application-Oriented: Provides valuable guidance for practical device design

Limitations

  1. Theoretical Constraints: Theoretical explanation of anomalous PtBi alloy behavior lacks sufficient depth
  2. Parameter Space: Insufficient exploration of alloy composition ratio effects on performance
  3. Environmental Factors: Lacks investigation of environmental factors such as temperature and humidity

Impact

  1. Academic Value: Provides important reference for material design of spintronic terahertz emitters
  2. Practical Value: Discovered PtBi alloy advantages hold significant implications for wideband terahertz applications
  3. Reproducibility: Detailed experimental methodology ensures good reproducibility of results

Applicable Scenarios

  1. High-Resolution Imaging: PtBi emitter wideband characteristics suitable for high-resolution terahertz imaging
  2. Wideband Spectroscopy: Applicable to terahertz spectroscopic applications requiring broad spectral coverage
  3. Communication Systems: High-frequency characteristics offer potential advantages in terahertz communications
  4. Medical Diagnostics: Wideband high-frequency characteristics beneficial for biomedical terahertz applications

References

This paper cites important literature from the fields of spintronics, terahertz physics, and materials science, including historical discoveries of Hall effects, theoretical predictions and experimental verification of spin Hall effects, and application research in terahertz technology, comprising 29 related papers that provide a solid theoretical foundation for the research.