Thermal switches, which electrically turn heat flow on and off, have attracted attention as thermal management devices. Electrochemical reduction/oxidation switches the thermal conductivity (\k{appa}\) of active metal oxide films. The performance of the previously proposed electrochemical thermal switches is low; on/off \k{appa}\-ratio is mostly less than 5 and \k{appa}\-switching width is less than 5 W/mK. We used CeO2 thin film as the active layer deposited on a solid electrolyte YSZ substrate. When the CeO2 thin film was reduced once (off-state) and then oxidized (on-state), \k{appa}\ was about 2.2 W/mK in the most reduced state, and \k{appa}\ increased with oxidation to 12.5 W/mK (on-state). This reduction (off-state)/oxidation (on-state) cycle was repeated 100 times and the average value of \k{appa}\ was 2.2 W/mK after reduction (off-state) and 12.5 W/mK after oxidation (on-state). The on/off \k{appa}\-ratio was 5.8 and \k{appa}\-switching width was 10.3 W/mK. The CeO2-based solid-state electrochemical thermal switches would be potential devices for thermal shutters and thermal displays.
- Paper ID: 2404.19385
- Title: High-performance solid-state electrochemical thermal switches with earth-abundant cerium oxide
- Authors: Ahrong Jeong, Mitsuki Yoshimura, Hyeonjun Kong, Zhiping Bian, Jason Tam, Bin Feng, Yuichi Ikuhara, Takashi Endo, Yasutaka Matsuo, Hiromichi Ohta
- Classification: cond-mat.mtrl-sci (Materials Science)
- Publication Date: April 2024
- Paper Link: https://arxiv.org/abs/2404.19385
Thermal switches are devices capable of electrically controlling heat flow on and off, with significant application prospects in thermal management. This study constructs solid-state electrochemical thermal switches using cerium oxide (CeO₂) thin films, an earth-abundant material, as the active layer. Through electrochemical reduction/oxidation processes, reversible switching of thermal conductivity κ between 2.2 W/mK (off-state) and 12.5 W/mK (on-state) is achieved, with an on/off ratio of 5.8 and a thermal conductivity switching width of 10.3 W/mK, significantly outperforming existing oxide-based thermal switches. The device maintains stable performance after 100 cycles, providing a new technological pathway for thermal displays and thermal management devices.
- Waste Heat Utilization Challenge: Two-thirds of global primary energy is lost as waste heat, with medium-to-low temperature waste heat (100-300°C) being particularly difficult to recycle
- Thermal Management Demand: Thermal diodes and thermal switches have attracted widespread attention for precise control of heat flow
- Limitations of Existing Technologies:
- Reported oxide-based electrochemical thermal switches exhibit low performance: on/off ratios mostly below 5, thermal conductivity switching width less than 5 W/mK
- Contain rare metal elements (Co, Ni), inconsistent with sustainable development requirements
- High operating temperature and slow response speed
- Develop high-performance thermal switches based on earth-abundant materials
- Achieve larger thermal conductivity switching range and on/off ratio
- Provide technological foundation for applications such as thermal displays
- First Use of CeO₂ as Thermal Switch Active Material: Leveraging CeO₂'s high thermal conductivity (~14 W/mK) and reversible redox characteristics
- Achieving Excellent Switching Performance: On/off ratio of 5.8, thermal conductivity switching width of 10.3 W/mK, outstanding performance among oxide-based thermal switches
- Excellent Cycling Stability: Performance remains stable after 100 cycles
- Use of Earth-Abundant Materials: CeO₂ is widely used in polishing powders, catalysts, and sunscreen, meeting sustainable development requirements
- In-Depth Mechanistic Study: Reveals the microscopic mechanism of thermal conductivity modulation through XRD, TEM, EELS and other characterization techniques
- Three-Layer Structure: Pt(80nm)/CeO₂(103nm)/YSZ(0.5mm)/Pt(30nm)
- Substrate Selection: YSZ single-crystal substrate with approximately +5% lattice mismatch with CeO₂
- Electrode Configuration: Top Pt electrode for electrochemical processing and thermal conductivity measurement
- Thin Film Growth: Epitaxial CeO₂ thin films prepared via pulsed laser deposition (PLD) at 800°C under 3×10⁻³ Pa oxygen atmosphere
- Electrode Preparation: Pt electrodes prepared via magnetron sputtering
- Device Processing: Cut into 5mm×5mm device units
- Operating Temperature: 280°C in air environment
- Current Control: Constant current mode, -10μA for reduction, +10μA for oxidation
- Electron Density: 1×10²¹ cm⁻³ per treatment
- Structural Characterization: XRD, TEM/STEM, EELS analysis of crystal structure and chemical valence changes
- Thermal Conductivity Measurement: Time-domain thermoreflectance (TDTR) method for measuring vertical thermal conductivity
- Cycling Performance: 100 reduction/oxidation cycles testing
- Active Layer: CeO₂ thin film (103nm thickness)
- Solid Electrolyte: YSZ single-crystal substrate
- Electrodes: Pt thin films
- Working Environment: 280°C in air
- Thermal Conductivity Measurement: TDTR measurement at room temperature
- Structural Analysis: XRD analysis after each electrochemical treatment
- Cycling Test: Reduction (Q=-1.5×10²² cm⁻³) and oxidation (Q=0.9×10²² cm⁻³) cycles
Comparison with reported oxide-based thermal switches: LiCoO₂, SrCoO₃, LaNiO₃, and other systems
- On-State Thermal Conductivity: 12.5±0.85 W/mK
- Off-State Thermal Conductivity: 2.2±0.36 W/mK
- On/Off Ratio: 5.8±0.85
- Thermal Conductivity Switching Width: 10.3±0.98 W/mK
- Cycling Stability: Performance remains stable after 100 cycles
XRD analysis determined phase evolution during the reduction process:
- Phase a: CeO₂ (n=∞)
- Phase b: Ce₉O₁₆ (δ≈0.24)
- Phase c: Ce₃O₅ (δ≈0.33)
- Phase d: Ce₂O₃ (δ=0.5)
Thermal conductivity is primarily correlated with the volume fraction of the CeO₂ phase (phase a).
Research shows that thicker films exhibit higher thermal conductivity and larger switching width, which correlates with oxygen defect concentration.
- At 150°C, the reduced state slowly self-oxidizes (complete oxidation in 190 hours)
- At 100°C, the reduced state remains stable
- At 280°C operating temperature, self-oxidation competes during reduction and oxidation processes
- Theoretical Proposal: Li et al. proposed the thermal transistor concept in 2006
- VO₂ System: Ben-Abdallah et al. proposed VO₂-based thermal switches in 2014, but actual κ does not vary with temperature
- Electrochemical System: Cho et al. first reported LiCoO₂ electrochemical thermal switches in 2014
- Oxide Systems: SrCoO₃, LaNiO₃, La₀.₅Sr₀.₅CoO₃ and other systems subsequently reported
- Superior Performance: Largest κ switching width among oxide-based thermal switches
- Material Advantages: Uses earth-abundant Ce element
- Clear Mechanism: Reveals phase transition mechanism through multiple characterization techniques
- Successfully developed high-performance solid-state electrochemical thermal switches based on CeO₂
- Achieved excellent switching performance: on/off ratio of 5.8, switching width of 10.3 W/mK
- Thermal conductivity modulation mechanism closely correlates with the volume fraction of CeO₂ phase
- Device exhibits good cycling stability and practical application potential
- High Operating Temperature: Requires 280°C operating temperature
- Response Speed: Electrochemical modulation speed is relatively slow
- Self-Oxidation: Self-oxidation phenomenon exists at elevated temperatures
- Switching Completeness: Reduced state still contains partial CeO₂ phase
- Research strategies for lowering operating temperature
- Exploration of methods to improve response speed
- System integration for practical applications such as thermal displays
- Investigation of other rare-earth oxide systems
- Material Innovation: First application of CeO₂ in thermal switches, demonstrating originality
- Performance Breakthrough: Achieves maximum switching width among oxide-based thermal switches
- In-Depth Mechanism: Reveals microscopic mechanisms through multiple advanced characterization techniques
- Practical Value: Uses abundant materials, consistent with sustainable development
- Comprehensive Experiments: Includes systematic studies on cycling stability, thickness dependence, etc.
- Harsh Operating Conditions: 280°C operating temperature limits certain applications
- Insufficient Theoretical Analysis: Lacks theoretical model for thermal conductivity changes
- Missing Application Demonstration: No demonstration of practical device applications
- Absent Cost Analysis: No analysis of fabrication cost and economic viability
- Academic Contribution: Provides new material system and performance benchmark for thermal switch field
- Technical Value: Offers new solutions for thermal management and thermal display technology
- Industrial Prospects: Has application potential in waste heat utilization and thermal management
- Thermal Displays: Display technology utilizing infrared heat sources
- Thermal Management Systems: Intelligent thermal management for electronic devices
- Waste Heat Utilization: Effective utilization of medium-to-low temperature waste heat
- Thermal Control Devices: Precise heat flow control applications
The paper cites 38 relevant references, covering important works in multiple fields including thermoelectric materials, thermal switches, and cerium oxide chemistry, providing a solid theoretical foundation for the research.
Overall Assessment: This is a high-quality materials science research paper that achieves significant progress in the thermal switch field. By introducing a new material system, it achieves performance breakthroughs and provides guidance for subsequent work through in-depth mechanistic research. Despite some technical challenges, it makes valuable contributions to the development of thermal management technology.