2025-11-19T11:55:13.998773

High-performance solid-state electrochemical thermal switches with earth-abundant cerium oxide

Jeong, Yoshimura, Kong et al.
Thermal switches, which electrically turn heat flow on and off, have attracted attention as thermal management devices. Electrochemical reduction/oxidation switches the thermal conductivity (\k{appa}\) of active metal oxide films. The performance of the previously proposed electrochemical thermal switches is low; on/off \k{appa}\-ratio is mostly less than 5 and \k{appa}\-switching width is less than 5 W/mK. We used CeO2 thin film as the active layer deposited on a solid electrolyte YSZ substrate. When the CeO2 thin film was reduced once (off-state) and then oxidized (on-state), \k{appa}\ was about 2.2 W/mK in the most reduced state, and \k{appa}\ increased with oxidation to 12.5 W/mK (on-state). This reduction (off-state)/oxidation (on-state) cycle was repeated 100 times and the average value of \k{appa}\ was 2.2 W/mK after reduction (off-state) and 12.5 W/mK after oxidation (on-state). The on/off \k{appa}\-ratio was 5.8 and \k{appa}\-switching width was 10.3 W/mK. The CeO2-based solid-state electrochemical thermal switches would be potential devices for thermal shutters and thermal displays.
academic

High-performance solid-state electrochemical thermal switches with earth-abundant cerium oxide

Basic Information

  • Paper ID: 2404.19385
  • Title: High-performance solid-state electrochemical thermal switches with earth-abundant cerium oxide
  • Authors: Ahrong Jeong, Mitsuki Yoshimura, Hyeonjun Kong, Zhiping Bian, Jason Tam, Bin Feng, Yuichi Ikuhara, Takashi Endo, Yasutaka Matsuo, Hiromichi Ohta
  • Classification: cond-mat.mtrl-sci (Materials Science)
  • Publication Date: April 2024
  • Paper Link: https://arxiv.org/abs/2404.19385

Abstract

Thermal switches are devices capable of electrically controlling heat flow on and off, with significant application prospects in thermal management. This study constructs solid-state electrochemical thermal switches using cerium oxide (CeO₂) thin films, an earth-abundant material, as the active layer. Through electrochemical reduction/oxidation processes, reversible switching of thermal conductivity κ between 2.2 W/mK (off-state) and 12.5 W/mK (on-state) is achieved, with an on/off ratio of 5.8 and a thermal conductivity switching width of 10.3 W/mK, significantly outperforming existing oxide-based thermal switches. The device maintains stable performance after 100 cycles, providing a new technological pathway for thermal displays and thermal management devices.

Research Background and Motivation

Problem Background

  1. Waste Heat Utilization Challenge: Two-thirds of global primary energy is lost as waste heat, with medium-to-low temperature waste heat (100-300°C) being particularly difficult to recycle
  2. Thermal Management Demand: Thermal diodes and thermal switches have attracted widespread attention for precise control of heat flow
  3. Limitations of Existing Technologies:
    • Reported oxide-based electrochemical thermal switches exhibit low performance: on/off ratios mostly below 5, thermal conductivity switching width less than 5 W/mK
    • Contain rare metal elements (Co, Ni), inconsistent with sustainable development requirements
    • High operating temperature and slow response speed

Research Motivation

  • Develop high-performance thermal switches based on earth-abundant materials
  • Achieve larger thermal conductivity switching range and on/off ratio
  • Provide technological foundation for applications such as thermal displays

Core Contributions

  1. First Use of CeO₂ as Thermal Switch Active Material: Leveraging CeO₂'s high thermal conductivity (~14 W/mK) and reversible redox characteristics
  2. Achieving Excellent Switching Performance: On/off ratio of 5.8, thermal conductivity switching width of 10.3 W/mK, outstanding performance among oxide-based thermal switches
  3. Excellent Cycling Stability: Performance remains stable after 100 cycles
  4. Use of Earth-Abundant Materials: CeO₂ is widely used in polishing powders, catalysts, and sunscreen, meeting sustainable development requirements
  5. In-Depth Mechanistic Study: Reveals the microscopic mechanism of thermal conductivity modulation through XRD, TEM, EELS and other characterization techniques

Methodology Details

Device Architecture Design

  • Three-Layer Structure: Pt(80nm)/CeO₂(103nm)/YSZ(0.5mm)/Pt(30nm)
  • Substrate Selection: YSZ single-crystal substrate with approximately +5% lattice mismatch with CeO₂
  • Electrode Configuration: Top Pt electrode for electrochemical processing and thermal conductivity measurement

Fabrication Process

  1. Thin Film Growth: Epitaxial CeO₂ thin films prepared via pulsed laser deposition (PLD) at 800°C under 3×10⁻³ Pa oxygen atmosphere
  2. Electrode Preparation: Pt electrodes prepared via magnetron sputtering
  3. Device Processing: Cut into 5mm×5mm device units

Electrochemical Treatment

  • Operating Temperature: 280°C in air environment
  • Current Control: Constant current mode, -10μA for reduction, +10μA for oxidation
  • Electron Density: 1×10²¹ cm⁻³ per treatment

Characterization Methods

  1. Structural Characterization: XRD, TEM/STEM, EELS analysis of crystal structure and chemical valence changes
  2. Thermal Conductivity Measurement: Time-domain thermoreflectance (TDTR) method for measuring vertical thermal conductivity
  3. Cycling Performance: 100 reduction/oxidation cycles testing

Experimental Setup

Material System

  • Active Layer: CeO₂ thin film (103nm thickness)
  • Solid Electrolyte: YSZ single-crystal substrate
  • Electrodes: Pt thin films
  • Working Environment: 280°C in air

Testing Conditions

  • Thermal Conductivity Measurement: TDTR measurement at room temperature
  • Structural Analysis: XRD analysis after each electrochemical treatment
  • Cycling Test: Reduction (Q=-1.5×10²² cm⁻³) and oxidation (Q=0.9×10²² cm⁻³) cycles

Comparison Benchmarks

Comparison with reported oxide-based thermal switches: LiCoO₂, SrCoO₃, LaNiO₃, and other systems

Experimental Results

Main Performance Indicators

  • On-State Thermal Conductivity: 12.5±0.85 W/mK
  • Off-State Thermal Conductivity: 2.2±0.36 W/mK
  • On/Off Ratio: 5.8±0.85
  • Thermal Conductivity Switching Width: 10.3±0.98 W/mK
  • Cycling Stability: Performance remains stable after 100 cycles

Phase Transition Mechanism Analysis

XRD analysis determined phase evolution during the reduction process:

  • Phase a: CeO₂ (n=∞)
  • Phase b: Ce₉O₁₆ (δ≈0.24)
  • Phase c: Ce₃O₅ (δ≈0.33)
  • Phase d: Ce₂O₃ (δ=0.5)

Thermal conductivity is primarily correlated with the volume fraction of the CeO₂ phase (phase a).

Thickness Dependence

Research shows that thicker films exhibit higher thermal conductivity and larger switching width, which correlates with oxygen defect concentration.

Thermal Stability

  • At 150°C, the reduced state slowly self-oxidizes (complete oxidation in 190 hours)
  • At 100°C, the reduced state remains stable
  • At 280°C operating temperature, self-oxidation competes during reduction and oxidation processes

Development History of Thermal Switches

  1. Theoretical Proposal: Li et al. proposed the thermal transistor concept in 2006
  2. VO₂ System: Ben-Abdallah et al. proposed VO₂-based thermal switches in 2014, but actual κ does not vary with temperature
  3. Electrochemical System: Cho et al. first reported LiCoO₂ electrochemical thermal switches in 2014
  4. Oxide Systems: SrCoO₃, LaNiO₃, La₀.₅Sr₀.₅CoO₃ and other systems subsequently reported

Advantages of This Work

  • Superior Performance: Largest κ switching width among oxide-based thermal switches
  • Material Advantages: Uses earth-abundant Ce element
  • Clear Mechanism: Reveals phase transition mechanism through multiple characterization techniques

Conclusions and Discussion

Main Conclusions

  1. Successfully developed high-performance solid-state electrochemical thermal switches based on CeO₂
  2. Achieved excellent switching performance: on/off ratio of 5.8, switching width of 10.3 W/mK
  3. Thermal conductivity modulation mechanism closely correlates with the volume fraction of CeO₂ phase
  4. Device exhibits good cycling stability and practical application potential

Limitations

  1. High Operating Temperature: Requires 280°C operating temperature
  2. Response Speed: Electrochemical modulation speed is relatively slow
  3. Self-Oxidation: Self-oxidation phenomenon exists at elevated temperatures
  4. Switching Completeness: Reduced state still contains partial CeO₂ phase

Future Directions

  1. Research strategies for lowering operating temperature
  2. Exploration of methods to improve response speed
  3. System integration for practical applications such as thermal displays
  4. Investigation of other rare-earth oxide systems

In-Depth Evaluation

Strengths

  1. Material Innovation: First application of CeO₂ in thermal switches, demonstrating originality
  2. Performance Breakthrough: Achieves maximum switching width among oxide-based thermal switches
  3. In-Depth Mechanism: Reveals microscopic mechanisms through multiple advanced characterization techniques
  4. Practical Value: Uses abundant materials, consistent with sustainable development
  5. Comprehensive Experiments: Includes systematic studies on cycling stability, thickness dependence, etc.

Weaknesses

  1. Harsh Operating Conditions: 280°C operating temperature limits certain applications
  2. Insufficient Theoretical Analysis: Lacks theoretical model for thermal conductivity changes
  3. Missing Application Demonstration: No demonstration of practical device applications
  4. Absent Cost Analysis: No analysis of fabrication cost and economic viability

Impact

  1. Academic Contribution: Provides new material system and performance benchmark for thermal switch field
  2. Technical Value: Offers new solutions for thermal management and thermal display technology
  3. Industrial Prospects: Has application potential in waste heat utilization and thermal management

Applicable Scenarios

  1. Thermal Displays: Display technology utilizing infrared heat sources
  2. Thermal Management Systems: Intelligent thermal management for electronic devices
  3. Waste Heat Utilization: Effective utilization of medium-to-low temperature waste heat
  4. Thermal Control Devices: Precise heat flow control applications

References

The paper cites 38 relevant references, covering important works in multiple fields including thermoelectric materials, thermal switches, and cerium oxide chemistry, providing a solid theoretical foundation for the research.


Overall Assessment: This is a high-quality materials science research paper that achieves significant progress in the thermal switch field. By introducing a new material system, it achieves performance breakthroughs and provides guidance for subsequent work through in-depth mechanistic research. Despite some technical challenges, it makes valuable contributions to the development of thermal management technology.