Double-layer Thin-film LiNbO3 Longitudinally Excited Shear Wave Resonators with Ultra-large Electromechanical Coupling Coefficient and Spurious-Free Performance

Basic Information

• Paper ID: 2405.17168
• Title: Double-layer Thin-film LiNbO3 Longitudinally Excited Shear Wave Resonators with Ultra-large Electromechanical Coupling Coefficient and Spurious-Free Performance
• Authors: Zhen-Hui Qin, Shu-Mao Wu, Chen-Bei Hao, Hua-Yang Chen, Sheng-Nan Liang, Si-Yuan Yu, Yan-Feng Chen
• Classification: physics.app-ph
• Institutions: State Key Laboratory of Solid-State Microstructure Physics, Nanjing University; School of Engineering and Applied Science, Nanjing University
• Paper Link: https://arxiv.org/abs/2405.17168

Abstract

This study proposes a double-layer thin-film lithium niobate (LiNbO3) longitudinally excited shear wave resonator with a theoretical electromechanical coupling coefficient exceeding 60%, resonance-antiresonance (RaR) ratio approaching 28%, and spurious-mode-free performance. This ultra-large electromechanical coupling coefficient approaches the theoretical limit of LiNbO3, far surpassing all currently reported microwave acoustic resonators. Based on X-cut thin-film LiNbO3, when the film thickness is on the order of hundreds of nanometers, the resonator fundamental mode frequency can cover the 1 GHz to 10 GHz range. The resonator design is convenient and flexible, allowing monotonic frequency tuning by modifying electrodes or thin-film LiNbO3 thickness without introducing additional spurious modes.

Research Background and Motivation

Problem Description

With the development of 5G/6G mobile communications and the sensing industry, RF filters face increasingly stringent performance requirements, including high frequency, large bandwidth, low insertion loss, high out-of-band rejection, high power handling capability, temperature stability, mechanical stability, and portability. The key challenge currently facing microwave acoustic filters is achieving large bandwidth under low insertion loss conditions.

Problem Significance

• RF filter bandwidth requirements in 4G communications are generally less than 10%
• Future 6G and beyond communications may require RF filter bandwidth exceeding 20%
• This presents enormous challenges for microwave acoustic filters

Limitations of Existing Methods

1. Delay-line filters: Bandwidth and insertion loss typically vary simultaneously
2. Resonator filters: Bandwidth depends on the electromechanical coupling coefficient of constituent resonators
3. Existing LiNbO3 resonators:
   • Rayleigh mode-based resonators have relatively small electromechanical coupling coefficients
   • Transversely excited acoustic modes still have insufficient electric field utilization
   • Large coupling coefficient resonators universally suffer from spurious mode problems

Research Motivation

Develop ultra-large electromechanical coupling coefficient resonators approaching the theoretical limit of LiNbO3 while simultaneously addressing spurious mode issues, providing key solutions for future ultra-wideband mobile communications.

Core Contributions

1. Proposed double-layer thin-film LiNbO3 longitudinally excited shear wave resonators, achieving an electromechanical coupling coefficient of 60.5% and RaR of 27.9%
2. Resolved spurious mode problems, achieving perfect spurious mode suppression within the main mode passband
3. Enabled flexible frequency tuning, allowing monotonic frequency adjustment through electrode or film thickness modification without introducing spurious modes
4. Provided theoretical analysis framework, explaining the physical mechanisms of spurious mode suppression in double-layer structures
5. Validated design practicality, demonstrating high tolerance of the architecture to device fabrication precision

Methodology Details

Task Definition

Design a microwave acoustic resonator with the following requirements:

• Input: Microwave electromagnetic signals
• Output: Processed microwave signals
• Constraints: Ultra-large electromechanical coupling coefficient (>60%), spurious-mode-free, frequency tunable

Device Architecture

Overall Structure Design

The double-layer thin-film LiNbO3 resonator comprises:

• Upper-layer X-cut thin-film LiNbO3
• Lower-layer -X-cut thin-film LiNbO3
• Top and bottom gold electrodes

Material Selection Rationale

Through analysis of piezoelectric coefficients e34 in different orientations of LiNbO3, X-cut LiNbO3 demonstrates significant advantages for longitudinally excited shear waves; therefore, X-cut thin-film LiNbO3 was selected for resonator construction.

Physical Mechanisms of Double-Layer Structure

Based on piezoelectric coupling equations:

T = c(∂u/∂x) - e(∂φ/∂x)
D = e(∂u/∂x) + ε(∂φ/∂x)

For double-layer equal-thickness thin-film LiNbO3 resonators, two scenarios exist:

Scenario One: Upper and lower LiNbO3 thin films have identical piezoelectric coefficients

• Resonance condition: 2πfd/v = nπ + π/2
• Acoustic field exhibits antisymmetric distribution along thickness direction in upper and lower films

Scenario Two: Upper and lower LiNbO3 thin films have equal magnitude but opposite-sign piezoelectric coefficients

• Resonance condition: πfd/v = nπ + π/2
• Acoustic field exhibits symmetric distribution along thickness direction in upper and lower films

Technical Innovations

Spurious Mode Suppression Mechanism

• Primary mode SH2: Corresponds to piezoelectric coefficient e34, with identical numerical values but opposite signs in X-cut and -X-cut LiNbO3, belonging to Scenario Two
• Spurious mode A1: Corresponds to piezoelectric coefficient e35, with identical numerical values and signs in X-cut and -X-cut LiNbO3, belonging to Scenario One
• Result: Spurious A1 mode frequency is far removed from the primary SH2 mode passband, achieving spurious suppression

Frequency Tuning Strategy

1. Electrode thickness modulation: Simultaneous modification of upper and lower electrode thickness achieves optimal performance
2. Film thickness modulation: Frequency can be tuned through selective area thinning of only the upper film layer
3. Crystal orientation modulation: Performance remains consistent when upper and lower films are rotated synchronously

Experimental Setup

Simulation Parameters

• Film thickness: 300 nm X-cut LiNbO3 + 300 nm -X-cut LiNbO3
• Electrode material: Gold (Au), thickness 20 nm
• Simulation method: Three-dimensional (3D) finite element simulation
• Analysis frequency range: 1-10 GHz

Evaluation Metrics

• Electromechanical coupling coefficient (kt²): Measures efficiency of electrical-to-mechanical energy conversion
• Resonance-antiresonance ratio (RaR): Reflects filter bandwidth capability
• Quality factor (Q): Characterizes resonator loss characteristics
• Spurious mode suppression: Spurious mode intensity within primary mode passband

Comparison Benchmarks

• Single-layer thin-film LiNbO3 resonators
• Various LiNbO3 resonators reported in literature (SH0 mode 55%, Love mode 44%, A1 mode 46%, etc.)

Experimental Results

Main Results

Performance Comparison

Frequency Coverage Range

• Film thickness 200-400 nm corresponds to frequency range 3.7-6.8 GHz
• Hundreds of nanometers thickness can cover 1-10 GHz band

Parameter Modulation Analysis

Electrode Thickness Effects

• Synchronous modulation: Thinner electrodes result in higher frequency, larger coupling coefficient, and no spurious modes
• Asynchronous modulation: Performance slightly degraded but remains acceptable

Film Thickness Effects

• Synchronous modulation: Quasi-linear inverse relationship between thickness and frequency; coupling coefficient remains essentially constant
• Single-layer modulation: When only upper layer thickness is modified, frequency remains quasi-linearly tunable with coupling coefficient >56%

Crystal Orientation Tolerance

• Single-layer rotation shows monotonic performance degradation
• Double-layer synchronous rotation maintains identical performance, demonstrating extremely high fabrication tolerance

Key Findings

1. Double-layer structure successfully suppresses spurious modes while maintaining ultra-large electromechanical coupling coefficient
2. Frequency tuning is highly flexible, achievable through multiple parameters without introducing spurious modes
3. High fabrication tolerance, primarily dependent on film quality rather than electrode precision

Related Work

Development History

• Late 1960s: First LiNbO3 acoustic resonators appeared, based on Rayleigh modes
• Recent developments: With maturation of single-crystal thin-film LiNbO3 technology, multiple novel resonator types emerged
  • Lamb wave A and S modes
  • Horizontal shear modes based on suspended films and substrate-mounted configurations

Key Progress

• 2019, Zhou et al.: 30Y-X-cut thin-film LiNbO3 SH0 mode, coupling coefficient 55%
• 2020, Hsu et al.: X-cut thin-film LiNbO3 Love mode, coupling coefficient 44%
• 2020, Lu et al.: 128Y-X-cut thin-film LiNbO3 A1 mode, coupling coefficient 46%
• 2020, Plessky et al.: Y-cut thin-film LiNbO3 longitudinally excited (YBAR), expected 50%
• 2024, Hartmann et al.: X-cut thin-film LiNbO3 longitudinally excited, exceeding 40%

Advantages of This Work

Compared to existing work, this study is the first to achieve electromechanical coupling coefficients approaching the theoretical limit of LiNbO3 while perfectly resolving spurious mode problems.

Conclusions and Discussion

Main Conclusions

1. Breakthrough performance metrics: Achieved electromechanical coupling coefficient of 60.5%, RaR of 27.9%, approaching the theoretical limit of LiNbO3
2. Resolved critical issues: Perfect spurious mode suppression, clearing obstacles for practical implementation
3. Design flexibility: Frequency tunable through multiple parameters, suitable for filter design requirements
4. Technically scalable: Approach equally applicable to LiTaO3 with higher temperature stability

Limitations

1. Fabrication complexity: Requires preparation of high-quality double-layer thin-film LiNbO3 with stringent technical requirements
2. Cost considerations: Material and process costs may increase compared to single-layer structures
3. Experimental verification: Paper primarily based on simulation results, lacking actual device test data

Future Directions

1. Experimental verification: Fabricate actual devices and conduct performance testing
2. Filter integration: Construct ultra-wideband filters based on this resonator
3. Material expansion: Explore applications on other materials such as LiTaO3
4. Process optimization: Develop efficient double-layer thin-film preparation and processing techniques

In-Depth Evaluation

Strengths

1. Strong theoretical innovation: Physical mechanisms of spurious mode suppression in double-layer structures are clear and innovative
2. Outstanding performance metrics: Both electromechanical coupling coefficient and RaR reach unprecedented levels
3. High practical value: Resolves the spurious mode problem of large coupling coefficient resonators
4. Comprehensive analysis: Complete theoretical analysis from material selection to device design
5. Design flexibility: Multiple parameter tuning methods provide convenience for practical applications

Shortcomings

1. Lack of experimental verification: Only simulation results available, lacking experimental data from actual devices
2. Fabrication feasibility: Fabrication and bonding techniques for double-layer films require verification
3. Temperature characteristics: Device temperature stability and temperature coefficient not analyzed
4. Power handling capability: Device power handling limits not addressed
5. Cost-benefit analysis: Cost advantages relative to existing solutions not considered

Impact

1. Academic value: Provides new theoretical framework and design methodology for acoustic resonator design
2. Industrial significance: Potentially becomes key technology for next-generation ultra-wideband mobile communications
3. Technology advancement: Will promote further development of thin-film LiNbO3 processing technology
4. Application prospects: Broad application potential in 5G/6G communications, radar, sensing, and other fields

Applicable Scenarios

1. Ultra-wideband filters: Suitable for future communication systems requiring bandwidth >20%
2. High-frequency applications: Microwave devices in 1-10 GHz frequency band
3. Low-loss requirements: RF front-end with strict insertion loss specifications
4. Miniaturization needs: Portable communication devices and IoT terminals

References

The paper cites 24 important references covering the development history of LiNbO3 acoustic devices, relevant theoretical foundations, and latest technological advances, providing solid theoretical basis and technical benchmarks for the research.

Overall Assessment: This is a high-quality applied physics research paper proposing innovative double-layer thin-film LiNbO3 resonator design, theoretically achieving breakthrough performance metrics. Although lacking experimental verification, its rigorous theoretical analysis and novel design approach are significant for advancing next-generation mobile communication technology development.