Landau Level Single-Electron Pumping

Basic Information

• Paper ID: 2406.13615
• Title: Landau Level Single-Electron Pumping
• Authors: E. Pyurbeeva, M.D. Blumenthal, J.A. Mol, H. Howe, H.E. Beere, T. Mitchell, D.A. Ritchie, M. Pepper
• Classification: cond-mat.mes-hall (Condensed Matter Physics - Mesoscopic and Hall Effects)
• Publication Date: January 3, 2025
• Paper Link: https://arxiv.org/abs/2406.13615

Abstract

This study provides the first detailed investigation of the effects of strong magnetic fields on single-electron pumps employing a split-gate finger-gate configuration. In the quantum Hall regime, the authors demonstrate electron pumping from Landau levels in a quantum wire, with measurements revealing significant oscillations in pump plateau length as a function of magnetic field, analogous to Shubnikov-de Haas oscillations. This similarity suggests that the pumping process depends on the density of states of the two-dimensional electron gas within a narrow energy window. Based on these observations, the researchers develop a novel theoretical description of single-electron pump operation that, for the first time, enables determination of key experimental physical parameters, including electron capture energy, broadening of quantized Landau levels in the wire, and quantum lifetime of electrons.

Research Background and Motivation

Problem Definition

Single-electron pumps serve as critical devices for quantum information processing, nanoelectronics, and electronic quantum optics, requiring high-precision control of individual electrons. However, the existing theoretical framework—the Universal Decay Cascade (UDC) model—while fitting experimental data well, has limitations in explaining physical phenomena and cannot explicitly correlate device "fingerprint" parameters αₙ, δₙ with key physical parameters such as temperature, magnetic field, and radiofrequency signal amplitude.

Research Significance

1. Technological Application Demands: Urgent need for high-precision single-electron control in quantum information processing and nanoelectronics
2. Theoretical Refinement: Limitations of the existing UDC model in explaining complex physical phenomena
3. Device Optimization: Need to understand the mechanisms by which magnetic fields affect electron pump precision

Research Motivation

Through high-precision split-gate finger-gate (SFG) electron pump configuration, systematically investigate single-electron pumping behavior under strong magnetic fields, establish new physical models to explain observed phenomena, and determine critical device parameters.

Core Contributions

1. First Systematic Study: Detailed investigation of strong magnetic field effects (1T-9T) on single-electron pumps
2. Novel Physical Phenomena Discovery: Discovery of correlation between pump plateau length oscillations and Shubnikov-de Haas oscillations
3. Innovative Theoretical Model: Proposal of the 0-DIP (Zero Derivative Inflection Point) model explaining pump dynamics
4. Direct Parameter Measurement: First direct measurement of electron capture energy (9.4 meV), Landau level broadening (0.84 meV), and quantum lifetime (0.78 ps)
5. Magnetic Field Dependence Revelation: Demonstration that the pumping process depends on the density of states within a narrow energy window in the source

Methodology Details

Device Design and Experimental Configuration

The experiment employs a split-gate finger-gate (SFG) configuration single-electron pump:

• Material System: GaAs/AlGaAs heterostructure, two-dimensional electron gas density n = 1.53×10¹⁵ m⁻²
• Gate Configuration: Finger gate (entrance, 150 nm wide) and split gate (exit, 400 nm wide, 200 nm spacing)
• Operating Parameters: RF frequency 180 MHz, amplitude 300 mV, bias voltage 100 mV
• Measurement Environment: 7 mK dilution refrigerator, 10 T superconducting magnet

0-DIP Theoretical Model

Core Physical Picture

While the traditional UDC model assumes that a quantum dot "loads" electrons below the Fermi level and then pumps them through non-equilibrium relaxation processes, the new 0-DIP model proposes:

1. Zero Derivative Inflection Point Configuration: When entrance and exit barriers are sufficiently close, there exists a specific Eₑₙₜ value such that the total potential profile exhibits a zero derivative inflection point on the source side
2. Bound State Formation: Beyond the 0-DIP configuration, the first bound state forms at capture energy Eₓ ≈ αEₑₓᵢₜ
3. Rapid Decoupling: Further increase in entrance barrier causes exponential decay of tunneling coupling, rapidly isolating the quantum dot from the source

Mathematical Description

The potential profile is expressed as:

E(x) = Eent φent(x) + Eexit φexit(x)

Evolution of quantum dot characteristic dimensions with barrier height:

Wd = CW √(dE/Eexit)
Dd = CD √((dE)³/Eexit)

where Wₐ is the barrier width and Dₐ is the quantum dot depth.

Magnetic Field Dependence Analysis

All pump plateaus are found to follow the same oscillation pattern, describable by a single parameter λ(B):

I = ef Σn exp[-exp(-αn(Vexit - λ(B)δ'n))]

Experimental Setup

Measurement Protocol

1. Pump Mapping: Measurement of pump current dependence on exit voltage Vₑₓᵢₜ and magnetic field B
2. Shubnikov-de Haas Measurement: Measurement of longitudinal resistance with and without RF signal
3. Quantum Hall Effect: Determination of electron density and filling factor
4. Parameter Scanning: Magnetic field 1T-9T, step size 0.5T

Key Experimental Parameters

• RF Parameters: V_Amp = 300 mV, f_RF = 180 MHz
• DC Bias: V_ent = -600 mV, V_SD = 100 mV
• Electron Density: n_D = 1.53×10¹⁵ m⁻²
• Temperature: 7 mK base temperature

Experimental Results

Main Findings

1. Plateau Length Oscillations

• Pump plateau length exhibits non-monotonic oscillations with magnetic field, with a pronounced resonance peak near 7.2 T
• Oscillation pattern is highly correlated with Shubnikov-de Haas effect

2. Universal Scaling Law

The starting voltages of the first four pump plateaus δ₁₋δ₄ completely overlap after linear transformation, with scaling factors following a power law η(n) ≈ nᵃ, where a = 1.58

3. Landau Level Parameter Determination

Through fitting of resonance peak widths:

• Landau Level Broadening: Γ = 0.84 meV
• Quantum Lifetime: τᵢ = 0.78 ps
• Capture Energy: Eₓ = 9.4 meV (at B = 7.3 T)

4. Spin Effects

Simulation results indicate that spin splitting must be considered to correctly describe experimental data, confirming the lifting of spin degeneracy in the magnetic field.

Numerical Results Comparison

The experimentally measured quantum lifetime τᵢ = 0.78 ps is consistent with typical values reported in literature for GaAs/AlGaAs systems (0.5-1.0 ps), validating the reliability of the measurements.

Theoretical Analysis and Simulation

Density of States Calculation

Density of states at different magnetic fields is calculated using Landau quantization theory:

En = ℏωc(n + 1/2) ± gμBB/2

where ωc = eB/m* is the cyclotron frequency.

Capture Energy Evolution

The capture energy is found to vary linearly with magnetic field: Eₓ(B) = Eₓ(7.3T) + k(B - 7.3T), with a variation range ΔEₓ = 2.4 meV.

Related Work

Historical Development

1. Early Research: Blumenthal et al. (2007) first realized GHz single-electron pumping
2. Magnetic Field Effects: Wright et al. (2008) and Kaestner et al. (2009) observed magnetic field enhancement of pump precision
3. Oscillation Phenomena: Leicht et al. (2011) first reported similar oscillations, but lacked in-depth physical explanation

Theoretical Framework

• UDC Model: Standard theoretical framework proposed by Kashcheyevs and Kaestner (2010)
• Open Quantum Systems: Recent work beginning to study driven quantum dots from the open quantum systems perspective

Conclusions and Discussion

Main Conclusions

1. Physical Mechanism: Single-electron pumping fundamentally depends on the density of states of Landau levels in the source
2. Energy Window: Electron exchange processes are confined within a narrow energy window much smaller than the Landau level width
3. Parameter Determination: First direct measurement of capture energy, Landau level broadening, and quantum lifetime
4. Universality: All pump plateaus follow a unified magnetic field dependence law

Limitations

1. Model Simplification: The 0-DIP model is based on one-dimensional approximation; two-dimensional effects in actual devices may affect accuracy
2. Parameter Range: Experiments cover only specific magnetic field and frequency ranges
3. Multi-electron Effects: The model primarily addresses single-electron pumping; multi-electron processes require further investigation

Future Directions

1. Frequency Dependence: Investigation of RF frequency effects on quantum lifetime and capture energy
2. Temperature Effects: Exploration of temperature effects on pump dynamics
3. Ejection Energy: Study of ejection energy characteristics of pumped electrons
4. Multi-electron States: Extension of theoretical description to multi-electron pumping processes

In-Depth Evaluation

Strengths

1. Experimental Precision: SFG configuration achieves unprecedented measurement precision
2. Theoretical Innovation: The 0-DIP model provides new physical insights, explaining long-standing puzzles
3. Parameter Determination: First direct measurement of key physical parameters, providing quantitative guidance for device design
4. Systematicity: Systematic investigation from 1T to 9T reveals complete magnetic field dependence

Weaknesses

1. Theoretical Complexity: Mathematical derivation of the 0-DIP model is relatively complex, potentially limiting widespread application
2. Applicability Range: Model universality requires verification in other device geometries and material systems
3. Dynamics Details: Microscopic dynamics description of capture processes requires further refinement

Impact

1. Academic Value: Provides new theoretical framework for the single-electron pump field
2. Application Prospects: Offers important guidance for high-precision quantum device design
3. Methodology: Establishes new methods for characterizing quantum devices in magnetic field environments

Applicable Scenarios

1. Quantum Metrology: High-precision single-electron pump as current standard
2. Quantum Information: On-demand single-photon sources and electronic quantum optics devices
3. Fundamental Research: Study of quantum transport phenomena in mesoscopic systems

References

This work cites 58 relevant references, covering important works in single-electron pumping, quantum Hall effect, open quantum systems, and other fields, providing a solid theoretical foundation for the research.

Summary: Through precise experiments and innovative theoretical modeling, this work deeply reveals the physical mechanisms of single-electron pumping in magnetic field environments, making important contributions to the field's development. The 0-DIP model not only explains experimental observations but also provides quantitative predictive capability, marking significant progress in single-electron pump theory.