Low-Temperature Electron Transport in 110 and 100 Silicon Nanowires: A DFT - Monte Carlo study

Basic Information

• Paper ID: 2409.07282
• Title: Low-Temperature Electron Transport in 110 and 100 Silicon Nanowires: A DFT - Monte Carlo study
• Authors: Daryoush Shiri (Chalmers University of Technology), Reza Nekovei (Texas A&M University-Kingsville), Amit Verma (Texas A&M University-Kingsville)
• Classification: cond-mat.mes-hall cond-mat.mtrl-sci physics.comp-ph quant-ph
• Publication Date: September 11, 2024 (arXiv preprint)
• Paper Link: https://arxiv.org/abs/2409.07282

Abstract

This study investigates the effects of extremely low temperatures on electron transport in strain-free silicon nanowires (SiNWs) with 110 and 100 axial orientations. A combination of semi-empirical 10-orbital tight-binding method, density functional theory (DFT), and ensemble Monte Carlo (EMC) method is employed. Acoustic and optical phonons are included in electron-phonon scattering rate calculations, covering both intraband and interband events. Comparison with room temperature (300K) characteristics reveals that for both nanowires, the average steady-state electron drift velocity increases by at least a factor of 2 at relatively moderate electric fields and lower temperatures. Furthermore, the average drift velocity of 110 nanowires is approximately 50% higher than 100 nanowires, which is explained by differences in their conduction band subband effective masses. Transient average electron velocity indicates pronounced ballistic electron motion at low temperatures, attributed to reduced electron-phonon scattering rates.

Research Background and Motivation

1. Research Problem

The core problem addressed by this study is understanding the variation patterns of electron transport characteristics in silicon nanowires under extremely low temperature conditions, particularly the differences in electron transmission behavior between nanowires of different crystal orientations (110 and 100) in low-temperature environments.

2. Problem Significance

• Quantum Computing Applications: Silicon nanowires demonstrate enhanced coherence potential in spin-based quantum bits (qubits), avoiding hyperfine magnetic interaction limitations with nuclei compared to III-V nanowires
• Low-Temperature Electronics: Provides low-cost alternatives for CMOS-compatible low-temperature sensors, switches, and deep-space electronic devices
• Technology Compatibility: Silicon nanowire fabrication is compatible with mainstream silicon technology, with enhanced quantum mechanical effects from size reduction

3. Limitations of Existing Research

• Insufficient understanding of electron transport mechanisms in silicon nanowires at extremely low temperatures
• Lack of systematic comparison of transport characteristics at low temperatures for nanowires of different crystal orientations
• Insufficient research on detailed mechanisms of electron-phonon scattering effects at low temperatures

4. Research Motivation

With the development of quantum computing and low-temperature electronics, there is a need to deeply understand electron transport characteristics in silicon nanowires at extremely low temperatures, providing theoretical foundations for related device design.

Core Contributions

1. Multi-Physics Coupled Calculation Method: First systematic study of low-temperature electron transport in silicon nanowires combining DFT, tight-binding method, and ensemble Monte Carlo method
2. Revelation of Crystal Orientation Dependence: Quantitative analysis of transport differences between 110 and 100 silicon nanowires at low temperatures, revealing 50% higher drift velocity in 110 nanowires
3. Clarification of Scattering Mechanisms: Detailed analysis of acoustic and optical phonon scattering effects on low-temperature electron transport, including intraband and interband scattering processes
4. Discovery of Ballistic Electron Motion: First observation of ballistic electron motion phenomenon in silicon nanowires at low temperatures with physical mechanism explanation
5. Quantification of Low-Temperature Transport Enhancement: Demonstration of at least 2-fold increase in electron drift velocity at low temperatures, providing quantitative guidance for low-temperature device design

Methodology Details

Task Definition

Investigation of electron transport characteristics in 110 and 100 silicon nanowires under different electric fields at 4K and 300K temperatures, including steady-state and transient drift velocities.

Model Architecture

1. Structure Optimization and Band Structure Calculation

• DFT Calculation: Structure energy minimization using SIESTA code
  • Exchange-correlation functional: Generalized Gradient Approximation (GGA) with PBE pseudopotentials
  • k-point sampling: 1×1×40 (Monkhorst-Pack algorithm)
  • Energy cutoff: 680 eV
  • Force tolerance: 0.01 eV/Å
• Tight-Binding Method: Semi-empirical sp³d⁵s* tight-binding scheme
  • 10-orbital model
  • Parameters from Jancu et al. (1998)
  • Brillouin zone divided into 8000 grid points

2. Electron-Phonon Scattering Rate Calculation

Scattering rates calculated based on first-order perturbation theory and deformation potential approximation:

Acoustic Phonons: Debye approximation employed

• Linear dispersion relation: $E_P = \hbar\omega = c|k|$
• where c is the sound velocity in silicon

Optical Phonons: Flat dispersion

• Fixed energy: $E_{LO} = 54$ meV

Temperature-Dependent Scattering Rate:

• Phonon emission: proportional to $n(E_P) + 1$
• Phonon absorption: proportional to $n(E_P)$
• Phonon occupation number: $n(E_P) = \frac{1}{e^{E_P/k_BT} - 1}$

3. Ensemble Monte Carlo Simulation

• Includes 4 lowest conduction band subbands
• Considers intraband and interband scattering
• Steady-state analysis: electrons injected at conduction band minimum at t=0
• Transient analysis: equilibration under zero electric field for 50,000 iterations before applying field

Technical Innovations

1. Multi-Scale Modeling: Integration of atomic-scale DFT calculations with mesoscopic-scale transport simulations
2. Comprehensive Scattering Consideration: Simultaneous inclusion of intraband and interband scattering from acoustic and optical phonons
3. Accurate Temperature Effect Treatment: Precise calculation of temperature effects on scattering through Bose-Einstein distribution
4. Transient Dynamics Analysis: Revelation of electron "hopping" behavior in momentum space

Experimental Setup

Nanowire Structure Parameters

• 110 SiNW: Diameter 1.3 nm, hydrogen-passivated surface
• 100 SiNW: Diameter 1.1 nm, hydrogen-passivated surface
• Boundary Conditions: Free-standing, minimum distance between adjacent unit cells >0.6 nm

Computational Parameters

• Temperature: 4K (low temperature) and 300K (room temperature)
• Electric Field Range: 0-50 kV/cm
• Band Parameters:
  • 110: $E_{cmin} = 1.81$ eV, $m^* = 0.16$
  • 100: $E_{cmin} = 2.528$ eV, $m^* = 0.63$

Evaluation Metrics

• Average drift velocity vs. electric field
• Transient velocity evolution
• Electron distribution function time evolution
• Scattering rate dependence on temperature and crystal orientation

Experimental Results

Main Results

1. Steady-State Drift Velocity

• Low-Temperature Enhancement: Drift velocity at 4K is at least 2 times higher than at 300K
• Crystal Orientation Difference: 110 nanowire drift velocity is approximately 50% higher than 100
• Velocity Saturation: High electric field induces velocity saturation due to phonon emission scattering

2. Scattering Rate Analysis

• Temperature Dependence: Scattering rate significantly reduced at low temperatures, dominated by phonon emission
• Crystal Orientation Effect: 100 nanowire scattering rate approximately 2 times higher than 110
• van Hove Singularity: LO phonon scattering rate exhibits sharp peak at band edge

3. Transient Behavior

• Ballistic Electron Motion: Pronounced velocity oscillations observed at low temperatures
• Hopping Mechanism: Periodic acceleration-scattering process of electrons in momentum space
• Time Scale: Oscillation period approximately 600 fs

Key Data

• At 15 kV/cm electric field, 100 nanowire velocity decreases by approximately 1/5, 110 by approximately 1/2 (4K→300K)
• Effective mass ratio: 100/110 = 0.63/0.16 ≈ 4
• LO phonon scattering threshold: k ≈ 2×10⁶ cm⁻¹ (110), k ≈ 6×10⁶ cm⁻¹ (100)

Physical Mechanism Explanation

1. Low-Temperature Enhancement: When $n(E_P) → 0$, phonon absorption scattering disappears, process dominated by emission
2. Crystal Orientation Difference: Effective mass difference leads to different density of states, $DOS(E) ∝ \sqrt{m^*}$
3. Ballistic Motion: After electrons reach LO phonon emission threshold, rapid scattering back to k=0 vicinity forms periodic motion

Related Work

Main Research Directions

1. Silicon Nanowire Fabrication: Top-down and bottom-up fabrication methods
2. Quantum Device Applications: Spin qubits, quantum dot devices
3. Low-Temperature Electronics: Deep-space electronic devices, low-temperature sensors
4. Transport Theory: Nanoscale electron transport modeling

Advantages of This Work

• First systematic study of crystal orientation dependence of silicon nanowire low-temperature transport
• Multi-scale approach combining first-principles and transport simulation
• Discovery and explanation of ballistic electron motion phenomenon

Conclusions and Discussion

Main Conclusions

1. Low temperature significantly enhances electron transport performance in silicon nanowires
2. 110 crystal orientation nanowires exhibit superior transport characteristics
3. Temperature dependence of electron-phonon scattering is the key physical mechanism
4. Unique ballistic electron motion phenomenon exists at low temperatures

Limitations

1. Idealized Assumptions: Assumes defect-free, undoped, uniformly-tempered nanowires
2. Size Constraints: Only studied nanowires of specific diameters
3. Scattering Mechanisms: Does not consider interface scattering, impurity scattering, and other mechanisms
4. Experimental Verification: Lacks corresponding experimental verification data

Future Directions

1. Consider effects of surface roughness and defects
2. Extend to more crystal orientations and sizes
3. Study effects of strain on low-temperature transport
4. Develop corresponding experimental verification methods

In-Depth Evaluation

Strengths

1. Methodological Innovation: Multi-physics coupled calculation method demonstrates strong innovation
2. Physical Insights: Discovery and explanation of ballistic electron motion phenomenon has important physical significance
3. Practical Value: Provides important guidance for low-temperature silicon-based device design
4. Computational Rigor: DFT+TB+EMC combination method is rigorous and reliable

Weaknesses

1. Experimental Absence: Lacks experimental verification; theoretical predictions require experimental support
2. Parameter Sensitivity: Insufficient discussion of sensitivity of results to computational parameters
3. Application Limitations: Studied nanowire sizes and conditions are relatively limited
4. Mechanism Analysis: Microscopic mechanism explanation of certain physical phenomena could be more in-depth

Impact

1. Academic Contribution: Provides important supplement to theory of nanoscale low-temperature electron transport
2. Technical Guidance: Has guiding significance for development of silicon-based quantum devices and low-temperature electronics
3. Method Demonstration: Multi-scale calculation method can be generalized to research of other nanomaterials

Applicable Scenarios

1. Silicon-based quantum computing device design
2. Low-temperature electronics device development
3. Deep-space exploration electronic systems
4. High-performance nanoelectronic devices

References

This paper cites 67 relevant references covering multiple fields including silicon nanowire fabrication, quantum devices, low-temperature electronics, and transport theory, providing solid theoretical foundation for the research.

Overall Assessment: This is a high-quality theoretical computation paper that systematically investigates low-temperature electron transport characteristics in silicon nanowires using multi-scale modeling methods, discovering important physical phenomena and providing reasonable mechanism explanations. The research results have important guiding significance for silicon-based quantum devices and low-temperature electronics, but require further experimental verification to support the theoretical predictions.