Effect of the Lattice-distortion on the Electronic Structure, Magnetic Anisotropy, and Hall Conductivities of the CoFeCrGa Spin Gapless Semiconductor: A First-Principles Study

Basic Information

• Paper ID: 2411.06520
• Title: Effect of the Lattice-distortion on the Electronic Structure, Magnetic Anisotropy, and Hall Conductivities of the CoFeCrGa Spin Gapless Semiconductor: A First-Principles Study
• Authors: Amar Kumar (IIT Delhi), Sujeet Chaudhary (IIT Delhi), Sharat Chandra (IGCAR)
• Classification: cond-mat.mtrl-sci (Condensed Matter Physics - Materials Science)
• Publication Date: November 2024
• Paper Link: https://arxiv.org/abs/2411.06520

Abstract

This study systematically investigates the effects of lattice distortion on the electronic structure, magnetic anisotropy, and Hall conductivities of CoFeCrGa spin gapless semiconductor (SGS) through density functional theory (DFT) calculations. The research considers two lattice distortion modes: uniform strain (-6% ≤ ΔV/V₀ ≤ 6%) and tetragonal distortion (0.8 ≤ c/a ≤ 1.2). Results demonstrate that CoFeCrGa structures under uniform strain maintain SGS characteristics, magnetic isotropy, and small anomalous Hall conductivity (AHC) and spin Hall conductivity (SHC). In contrast, tetragonal distorted structures exhibit near half-metallic behavior with extremely high spin polarization, giant magnetic anisotropy (~10⁶ J/m³), and significantly enhanced AHC (-215 to 250 S/cm).

Research Background and Motivation

Problem Background

1. Spintronics Material Requirements: Modern spintronic devices require magnetic materials with high spin polarization, high Curie temperature, large magnetic anisotropy, and large Hall conductivity.
2. Limitations of Existing Materials:
   • CoFeB alloys exhibit weak perpendicular magnetic anisotropy at tunnel barrier interfaces
   • Tetragonal Heusler alloys show low tunneling magnetoresistance
   • Perovskite materials are structurally unstable in thin film form
   • Cubic Heusler alloys have low experimental spin polarization and magnetic isotropy
3. Advantages of SGS Materials:
   • Higher Curie temperature compared to magnetic semiconductors
   • Simultaneously provide 100% spin-polarized electron and hole carriers
   • Low excitation energy enables efficient transport
   • Long carrier diffusion length enables efficient spin transport

Research Motivation

CoFeCrGa, as a newly discovered quaternary Heusler alloy SGS material, possesses high Curie temperature (>600 K) and magnetic moment (~2.0 μB/f.u.). However, lattice distortion is inevitable during device integration, and SGS properties are highly sensitive to external factors. Therefore, systematic investigation of lattice distortion effects on its physical properties is crucial for device design.

Core Contributions

1. Systematic Research Framework: First comprehensive investigation of the effects of uniform strain and tetragonal distortion on multiple physical properties of CoFeCrGa SGS alloy
2. Exchange-Correlation Functional Verification: Determined that GGA is more suitable for studying CoFeCrGa properties through comparison of GGA and GGA+U methods
3. Electronic Structure Stability Discovery: Demonstrated that CoFeCrGa's SGS characteristics are robust under uniform strain but transition to half-metallic properties under tetragonal distortion
4. Magnetic Anisotropy Modulation Mechanism: Revealed tetragonal distortion-induced giant magnetic anisotropy (~10⁶ J/m³) and its bipolar characteristics
5. Hall Transport Property Modulation: Discovered that tetragonal distortion significantly enhances anomalous Hall conductivity, providing new modulation means for spintronics applications

Methodology Details

Computational Methods

This study employs density functional theory (DFT) calculations based on plane-wave pseudopotential methods using the QUANTUM ESPRESSO software package.

Technical Parameters

• Exchange-Correlation Functional: Generalized Gradient Approximation (GGA) - PBE parameterization
• Energy Cutoff: 350 Ry
• k-point Grid: 15×15×15 (Y-I ordered 16-atom cubic unit cell)
• Convergence Criteria:
  • Atomic forces < 10⁻³ Ry/Bohr
  • Total energy change < 10⁻⁶ Ry

Lattice Distortion Modeling

Uniform Strain

• Strain Range: -6% ≤ ΔV/V₀ ≤ 6%
• Lattice Parameters: 5.60-5.83 Å
• Physical Significance: Simulates isotropic stress effects during device integration

Tetragonal Distortion

• Axial Ratio Range: 0.8 ≤ c/a ≤ 1.2
• Volume Constraint: Maintains optimized cubic phase volume V₀
• Lattice Parameters: a = 5.38-6.16 Å, c = 4.92-6.45 Å

Physical Property Calculations

Magnetic Crystalline Anisotropy Energy (MCA)

Calculated using the magnetic force theorem:

MCA = E_band[100] - E_band[001]
K_MCA = MCA/V

Magnetic Shape Anisotropy (MSA)

Calculated through direct summation of dipole-dipole interactions:

MSA = E_dip[100] - E_dip[001]

Hall Conductivity

Calculated using maximally localized Wannier functions (MLWF) and Kubo formula for anomalous Hall conductivity (AHC) and spin Hall conductivity (SHC).

Experimental Results

Exchange-Correlation Functional Verification

The GGA computational results show excellent agreement with experimental values, thus GGA was selected as the exchange-correlation functional for subsequent calculations.

Uniform Strain Effects

Electronic Structure Stability

• SGS Characteristics Maintained: All uniformly strained structures (-6% ≤ ΔV/V₀ ≤ 6%) maintain SGS characteristics
• Magnetic Moment Stability: Total magnetic moment remains at 2.00 μB/f.u.
• Spin Polarization: ~100% under negative strain, ~50% under positive strain (1-5%), rising back to ~100% at maximum positive strain (6%)

Relative Formation Energy

Relative formation energy of uniformly strained structures is very small (≲ 0.1 eV/f.u.), indicating these structures are easily formed experimentally.

Tetragonal Distortion Effects

Electronic Structure Transition

• SGS→Half-metallic Transition: Even small tetragonal distortion disrupts SGS characteristics
• High Spin Polarization: Slightly distorted structures (0.90 ≤ c/a ≤ 1.10) show ~90% spin polarization
• Enhanced Metallicity: Large distortion (|Δc/a| ≥ 0.10) leads to dominant metallic properties

Magnetic Anisotropy

Tetragonal distortion induces giant magnetic crystalline anisotropy:

• Compressed Structures (c/a < 1.0): In-plane magnetic anisotropy, MCA = -0.17 to -2.07×10⁶ J/m³
• Stretched Structures (c/a > 1.0): Perpendicular magnetic anisotropy, MCA = 0.10 to 1.64×10⁶ J/m³
• Bipolar Characteristics: MCA exhibits clear bipolar variation with axial ratio

Hall Conductivity Modulation

• Significantly Enhanced AHC: AHC ranges from -215 to 250 S/cm under tetragonal distortion, far exceeding the -30 S/cm of cubic structure
• Stable SHC: SHC shows little change under tetragonal distortion, maintaining levels comparable to Y-I ordered structure

Atomic and Orbital Contribution Analysis

• Primary MCA Contributors: d-orbitals of transition metals and p-orbitals of Ga
• Orbital Specificity: Specific orbitals (e.g., Co-d_z², Fe-d_xy) contribute significantly to MCA in different distorted structures
• Electron Redistribution: Electron state redistribution near the Fermi level is the microscopic mechanism for MCA changes

Related Work

Current Status of SGS Material Research

• Theoretical Prediction: Numerous SGS materials have been predicted through first-principles calculations over the past decade
• Experimental Verification: Multiple SGS materials have been experimentally verified, including Cr₃Al, V₃Al, FeMnGa, etc.
• Quaternary Advantages: Quaternary Heusler alloy SGS exhibits higher tunability compared to binary or ternary compounds

CoFeCrGa Research History

• First Prediction: Theoretically predicted by Gao et al.
• Experimental Verification: First experimentally prepared and confirmed SGS properties by Bainsla et al.
• Thin Film Stability: Mishra et al. demonstrated SGS properties are maintained in thin film form

Lattice Distortion Research

Existing research primarily focuses on distortion effects in other Heusler alloys; systematic investigation of CoFeCrGa is presented here for the first time.

Conclusions and Discussion

Main Conclusions

1. Strain Stability: CoFeCrGa's SGS characteristics demonstrate good robustness under uniform strain, which is highly advantageous for practical device applications
2. Distortion Modulation: Tetragonal distortion can transform SGS into half-metallic state and induce giant magnetic anisotropy with enhanced Hall conductivity
3. Bipolar Magnetic Anisotropy: Precise control of in-plane or perpendicular magnetic anisotropy can be achieved by controlling the c/a ratio
4. Device Design Guidance: The research provides important theoretical guidance for designing CoFeCrGa-based spintronic devices

Practical Application Prospects

Device Integration Strategies

• GaAs Substrate: Can induce perpendicular magnetic anisotropy (PMA)
• MgO Substrate: Can induce in-plane magnetic anisotropy (IMA)
• Strain Engineering: Desired magnetic orientation can be achieved through controlled growth conditions

Performance Advantages

• High Thermal Stability: Giant magnetic anisotropy ensures high device thermal stability
• High Storage Density: Perpendicular magnetic anisotropy facilitates high-density data storage
• Low Power Consumption: SGS characteristics enable low-power spin transport

Limitations

1. Computational Accuracy: DFT calculations contain inherent approximations; actual values may deviate from calculated values
2. Temperature Effects: Study only considers properties at 0K, excluding finite temperature effects
3. Interface Effects: Does not consider interface effects and defects in actual devices
4. Dynamic Stability: Phonon calculations were not performed to verify dynamic stability of distorted structures

Future Directions

1. Experimental Verification: Experimental studies are needed to verify theoretical predictions of distortion effects
2. Interface Engineering: Investigation of CoFeCrGa interface properties with different materials
3. Defect Effects: Consideration of point defect effects on SGS properties
4. Device Simulation: Device-level performance simulation based on material properties

In-Depth Evaluation

Strengths

1. Research Comprehensiveness: Systematically investigates effects of two major distortion modes on multiple physical properties with comprehensive and in-depth content
2. Methodological Rigor:
   • First verifies computational method reliability
   • Employs appropriate convergence tests
   • Reasonable physical model setup
3. Result Credibility:
   • Computational results show excellent agreement with existing experimental data
   • Clear and reasonable physical mechanism explanations
   • Numerically significant results
4. Practical Value: Provides important theoretical guidance for CoFeCrGa-based spintronic device design
5. Technical Innovation:
   • First systematic investigation of CoFeCrGa distortion effects
   • Reveals distortion-induced magnetic anisotropy modulation mechanisms
   • Discovers Hall conductivity tunability

Shortcomings

1. Theoretical Limitations:
   • Only considers collinear magnetism, excluding non-collinear magnetic structures
   • 0K calculations lack finite temperature effects
   • Does not consider magnon-phonon coupling effects
2. Experimental Gaps:
   • Lacks experimental verification, particularly for actual preparation of distorted structures
   • No comparative experiments with other SGS materials
3. Application Limitations:
   • Does not consider interface effects in actual devices
   • Lacks device-level performance assessment
   • Does not discuss fabrication feasibility
4. Computational Details:
   • MSA calculation using direct summation may have accuracy issues
   • Phonon calculations not performed to verify dynamic stability

Impact Assessment

1. Academic Contribution:
   • Provides important theoretical foundation for strain engineering of SGS materials
   • Enriches magnetic modulation theory of Heusler alloys
   • Offers new perspectives for spintronic material design
2. Practical Value:
   • Guides design and fabrication of CoFeCrGa-based devices
   • Provides material foundation for novel spintronic device development
   • Facilitates realization of high-performance magnetic storage devices
3. Reproducibility:
   • Detailed description of computational methods and parameters
   • Uses open-source software packages
   • Results demonstrate good reproducibility

Applicable Scenarios

1. Magnetic Storage Devices: Utilizes tunable magnetic anisotropy for high-density, low-power storage
2. Spin Logic Devices: Leverages SGS characteristics for efficient spin transport and manipulation
3. Magnetic Sensors: Utilizes enhanced Hall effect for high-sensitivity magnetic field detection
4. Terahertz Emitters: Utilizes large anomalous Hall conductivity for terahertz wave emission

References

This paper cites 75 relevant references covering important works in multiple research fields including SGS materials, Heusler alloys, magnetic anisotropy, and Hall effects, providing a solid theoretical foundation for the research.

Overall Assessment: This is a high-quality theoretical research paper that systematically reveals the mechanisms of lattice distortion effects on CoFeCrGa SGS material properties, providing important theoretical guidance for related device design and applications. The research methodology is rigorous, results are credible, and the work possesses significant academic value and application prospects.