Emergence of half-metallic ferromagnetism and valley polarization in transition metal substituted WSTe monolayer

Basic Information

• Paper ID: 2412.10819
• Title: Emergence of half-metallic ferromagnetism and valley polarization in transition metal substituted WSTe monolayer
• Authors: Shivani Kumawat, Chandan Kumar Vishwakarma, Mohd Zeeshan, Indranil Mal, Sunil Kumar, B. K. Mani
• Affiliations: Indian Institute of Technology Delhi, University of California Santa Barbara
• Classification: cond-mat.mtrl-sci, cond-mat.mes-hall
• Submission Date: December 14, 2024
• Paper Link: https://arxiv.org/abs/2412.10819

Abstract

This work investigates the effects of transition metal (Fe, Mn, Co) doping on the electronic, spin, and valleytronic properties of the two-dimensional Janus material WSTe monolayer through first-principles calculations. The pristine WSTe exhibits intrinsic Rashba and Zeeman-type spin splitting with a Rashba parameter of approximately 422 meVÅ. Upon transition metal doping at specific concentrations (6.25% and 18.75% for Fe, 25% for Mn, 18.75% and 25% for Co), the structures exhibit half-metallic ferromagnetism with 100% spin polarization. Valley polarization values reach 65, 54.4, and 46.3 meV (corresponding to 6.25% Fe, Mn, and Co, respectively). The study further reveals the tunability of these properties through strain engineering, providing theoretical foundations for spintronics and valleytronic device applications.

Research Background and Motivation

Research Questions

Two-dimensional Janus materials (such as WSTe) possess significant application potential in spintronics and valleytronic fields due to their unique lattice structures and broken symmetry characteristics. However, the primary limitation of these materials lies in their intrinsic non-magnetic nature, which restricts their application in multifunctional devices.

Importance of the Problem

1. Spintronics Requirements: Spin-polarized materials are crucial for realizing low-power, high-speed spintronic devices, offering advantages over conventional electronics including faster operation, ultra-low heat dissipation, and non-volatility.
2. Valleytronic Prospects: Valley degrees of freedom as a new quantum degree of freedom can enable phenomena such as optical circular dichroism, valley Hall effect, and spin-valley locking.
3. Experimental Validation: Room-temperature ferromagnetism has been experimentally confirmed in transition metal-doped two-dimensional materials (e.g., Fe-MoS₂, V-WSe₂).

Limitations of Existing Approaches

1. Janus-TMDCs materials are typically non-magnetic, limiting spintronics applications
2. Research on transition metal doping effects in WSTe remains unexplored
3. Systematic studies on the tunability of valley polarization are lacking

Research Motivation

WSTe was selected as the research subject based on the following considerations:

• Its parent compound WTe₂ exhibits giant valley polarization upon Co doping
• The Janus structure's intrinsic out-of-plane mirror symmetry breaking provides additional degrees of freedom
• Strong spin-orbit coupling effects facilitate Rashba splitting and valley polarization

Core Contributions

1. Systematic investigation of multifunctional properties of transition metal-doped WSTe: Comprehensive exploration of the effects of Fe, Mn, and Co doping on electronic structure, magnetism, spin splitting, and valley polarization.
2. Prediction of half-metallic ferromagnetic states: Discovery of 100% spin polarization at specific doping concentrations, providing an ideal material platform for spintronic devices.
3. Revelation of strain-tunable valley polarization: First systematic investigation of the mechanisms by which uniaxial and biaxial strain modulate WSTe valley polarization, with maximum valley polarization reaching 112 meV.
4. Establishment of structure-property correlations: Elucidation of the microscopic physical picture of magnetic origin, spin splitting mechanisms, and valley polarization.
5. Provision of quantitative design parameters: Delivery of key parameters including Rashba parameter (422 meVÅ) and Zeeman splitting (403 meV), providing guidance for experimental research.

Methodology Details

Computational Methodology

This study employs first-principles calculations based on density functional theory (DFT) using the Vienna Ab initio Simulation Package (VASP).

Core Computational Settings

1. Exchange-correlation functional: Generalized gradient approximation (GGA) Perdew-Burke-Ernzerhof (PBE) pseudopotential
2. Plane wave cutoff energy: 500 eV
3. k-point mesh: 13×13×1 Γ-centered grid
4. Convergence criteria: Energy convergence 10⁻⁶ eV, force convergence 10⁻⁴ eV/Å
5. Vacuum layer thickness: 12 Å (to avoid interlayer interactions)

Treatment of Strongly Correlated Electrons

For the strong correlation effects of d electrons in Fe/Mn/Co, the rotationally invariant DFT+U method (Dudarev scheme) was employed:

• Hubbard U parameters were self-consistently calculated through density functional perturbation theory (DFPT)
• Calculated U values: Fe (4.4 eV), Mn (4.6 eV), Co (5.3 eV)
• These values are consistent with literature reports (4.6, 4.0, 5.0 eV)

Spin-Orbit Coupling

To investigate Rashba splitting, Zeeman spin splitting, and valley polarization, relativistic effects (SOC) were included in the calculations.

Structural Modeling

• 4×4×1 supercells were used to simulate transition metal substitutional doping
• Doping concentrations: 6.25%, 12.5%, 18.75%, 25%
• TM atoms replaced W atom positions

Calculation of Key Physical Quantities

Rashba Parameter

Calculated through the relationship: $\alpha_R = \frac{2E_R}{k_R}$ where $E_R$ is the energy difference and $k_R$ is the momentum offset.

Valley Polarization

Defined as the energy difference between K and K' valleys: $\Delta_{KK'} = |E_{K'} - E_K|$

Spin Polarization

Determined through spin asymmetry of the density of states at the Fermi level.

Magnetic Ground State

Determined by comparing relative energies of ferromagnetic (FM) and antiferromagnetic (AFM) configurations: $\Delta E = E_{FM} - E_{AFM}$

Technical Innovations

1. Systematic strain engineering study: First systematic investigation of the effects of uniaxial and biaxial strain (±3%) on WSTe's Rashba parameter, Zeeman splitting, and valley polarization.
2. Multi-concentration comparative analysis: Through comparison of four different doping concentrations, revealing concentration-dependent phase transitions (semiconductor-half-metal transitions).
3. Spin texture analysis: Calculation of spin textures in the kₓ-kᵧ plane, providing intuitive visualization of the physical nature of the Rashba effect.
4. Microscopic mechanism elucidation: Establishment of correlations between macroscopic properties and microscopic electronic structure through orbital-resolved density of states and spin charge density analysis.

Experimental Setup

Structural Parameters

• Pristine WSTe:
  • Lattice constant: 3.31 Å (this work), consistent with literature values 3.35-3.36 Å
  • W-S bond length (L₁): 2.429 Å
  • W-Te bond length (L₂): 2.718 Å
  • Bond angle θ: 83.11°
• Structural changes after TM doping:
  • Lattice constant remains essentially unchanged
  • Bond lengths decrease (both L₁ and L₂ decrease), indicating stronger covalent interactions
  • Example for Fe-WSTe: L₁=2.282 Å, L₂=2.623 Å

Stability Verification

Structural stability was verified through binding energy calculations:

• All TM-WSTe structures exhibit negative binding energies
• Indicating relatively stable doped configurations
• Fe-WSTe binding energy range: -37.22 to -49.43 eV

Magnetic Configurations

• Both ferromagnetic (FM) and antiferromagnetic (AFM) magnetic orderings were examined
• Ground state magnetic configurations were determined through energy comparison
• FM is the ground state in most cases (except 25% Co-WSTe)

Computational Convergence

• k-point mesh convergence testing
• Vacuum layer thickness testing (12 Å sufficient to eliminate interlayer interactions)
• Cutoff energy convergence verification

Experimental Results

Electronic Structure of Pristine WSTe

Basic Electronic Properties

1. Band gap characteristics:
   • Without SOC: Indirect band gap 1.35 eV (valence band maximum at Γ point, conduction band minimum between Γ-K)
   • With SOC: Band gap reduced to 1.21 eV
   • Consistent with literature values
2. Orbital contributions:
   • Valence and conduction band edges primarily dominated by W 5d orbitals
   • S 3p and Te 5p orbitals provide secondary contributions
   • Spin-up and spin-down states are symmetric, confirming non-magnetic character

Rashba Spin Splitting

Physical Origin: In-plane inversion symmetry breaking + internal electric field perpendicular to the material plane (arising from S and Te electronegativity differences)

Quantitative Results:

• Γ-K direction: αᴿ = 422 meVÅ, Eᴿ = 18 meV, kᴿ = 0.043 Å⁻¹
• Γ-M direction: αᴿ = 356 meVÅ
• Consistent with literature values (322-324 meVÅ)

Spin Texture:

• In the kₓ-kᵧ plane near the Γ point VBM, exhibits typical in-plane spin polarization
• Perpendicular component is nearly zero
• Displays vortex-like spin arrangement

Zeeman-type Spin Splitting

• Valence band K/K' valleys: 403 meV (consistent with literature 426 meV)
• Conduction band: only 37 meV (consistent with literature 29 meV)
• Valence-conduction band difference originates from different orbital contributions (VBM: dₓᵧ and dₓ²₋ᵧ²; CBM: d_z²)

Strain Tuning Effects

Band Gap Evolution

• Compressive strain: Band gap slowly increases
• Tensile strain: Band gap decreases
• Biaxial strain effects are more pronounced than uniaxial

Rashba Parameter Tuning

Uniaxial strain (-3% to +3%):

• Compressive strain: αᴿ enhancement
  • Γ-K direction: +1.64% (3% compression)
  • Γ-M direction: +2.43% (3% compression)
• Tensile strain: αᴿ weakening

Biaxial strain:

• 3% compression: Γ-K direction enhancement 2.08%, Γ-M direction enhancement 2.63%
• Effects more pronounced than uniaxial strain

Zeeman Splitting Trend

• Shows opposite trend to Rashba parameter
• Compressive strain: linearly decreases
• Tensile strain: linearly increases

Electronic Structure of TM-Doped Systems

Fe-WSTe System

Half-metallic characteristics:

• 6.25% Fe: Spin-up metallic, spin-down semiconducting (Eg=1.15 eV) → 100% spin polarization
• 12.5% Fe: Both spin channels semiconducting (Eg↑=0.05 eV, Eg↓=0.54 eV)
• 18.75% Fe: Half-metallic (Eg↓=0.95 eV) → 100% spin polarization
• 25% Fe: Semiconducting (Eg↑=0.11 eV, Eg↓=1.08 eV)

Density of States Analysis:

• W 5d electrons still dominate valence-conduction bands
• Fe 3d electrons contribute defect states near the Fermi level
• At 6.25% and 18.75%, majority spin states exist at Fermi level with minority spin band gap

Mn-WSTe and Co-WSTe

Mn-WSTe:

• Only 25% concentration exhibits half-metallic character (Eg↓=1.16 eV)
• Other concentrations are semiconducting

Co-WSTe:

• 18.75% and 25% exhibit half-metallic character
• Band gaps: 18.75% (Eg↓=0.60 eV), 25% (Eg↓=0.33 eV)

Magnetic Properties

Determination of Magnetic Ground State

Relative energy (ΔE = E_FM - E_AFM):

• Fe-WSTe: -0.56, -0.29, -0.13, -0.38 eV (6.25%-25%)
• Mn-WSTe: -1.06, -0.24, -0.19, -0.26 eV
• Co-WSTe: -0.13, -0.09, -0.03 eV; +0.02 eV (25% is AFM)

Conclusion: FM is the ground state except for 25% Co-WSTe

Magnetic Moment Distribution

Total magnetic moment evolution:

Characteristics:

• Increasing trend with concentration (exceptions at 25% for Fe and Co)
• Primary contributions from TM atoms (at 6.25%: Fe 133%, Mn 189%, Co 66%)
• W, S, Te show opposite contributions, leading to reduced total magnetic moment

Magnetic Origin

d-electron filling:

• Fe (3d⁶): t₂g↑↑↑ t₂g↓↓ eg↑↑ → 4 unpaired electrons
• Mn (3d⁵): t₂g↑↑↑ eg↑↑ → 5 unpaired electrons
• Co (3d⁷): t₂g↑↑↑ t₂g↓↓↓ eg↑↑ eg↓ → 3 unpaired electrons

Spin charge density:

• Pristine WSTe: uniform distribution, zero spin polarization
• TM-WSTe: spin density highly localized around TM atoms
• Indicates charge transfer and hybridization effects

Valley Polarization

Valley Polarization in 6.25% Fe-WSTe

Without strain:

• ΔKK' = 65 meV
• Higher than literature-reported V-WSSe (58 meV)
• VBM splitting far exceeds CBM

Physical mechanism:

• Time-reversal symmetry breaking (magnetic doping)
• Strong spin-orbit coupling
• Opposite spin in K and K' valleys leads to asymmetric splitting

Other Concentrations and TM Elements

• Mn-WSTe (6.25%): ΔKK' = 54.4 meV
• Co-WSTe (6.25%): ΔKK' = 46.3 meV
• At higher concentrations, dense defect states make valley polarization quantification difficult

Strain Tuning of Valley Polarization

Uniaxial strain effects:

Biaxial strain effects:

Key Findings:

1. Tensile strain enhances valley polarization; compressive strain weakens it
2. Biaxial strain effects are more significant
3. Maximum valley polarization 112 meV (3% biaxial tension)
4. Provides feasible pathways for experimental tuning

Ablation Analysis

Although ablation experiments are not explicitly labeled in the paper, the following component contributions can be extracted through systematic investigation:

1. Role of SOC:
   • Without SOC: Band gap 1.35 eV, no spin splitting
   • With SOC: Band gap 1.21 eV, Rashba and Zeeman splitting appear
   • Conclusion: SOC is necessary for spin splitting
2. TM doping concentration:
   • Low concentration (6.25%): Half-metallic + high valley polarization
   • Medium concentration: Semiconducting or half-metallic
   • High concentration (25%): Dense defect states
   • Conclusion: Concentration tuning enables property transitions
3. Strain type:
   • Uniaxial vs. biaxial: Biaxial effects more pronounced
   • Tensile vs. compressive: Opposite trends
   • Conclusion: Strain engineering is an effective tuning method

Related Work

Two-Dimensional Magnetic Materials

1. Experimental Progress:
   • Fe-MoS₂: Room-temperature ferromagnetism (Fu et al., Nat. Commun. 2020)
   • V-WSe₂: Single-layer room-temperature ferromagnetism (Yun et al., Adv. Sci. 2020)
   • V-MoTe₂: Post-growth doping-induced ferromagnetism (Coelho et al., Adv. Electron. Mater. 2019)
2. Theoretical Studies:
   • TM-doped black phosphorus: Room-temperature ferromagnetism prediction (Jiang et al., APL 2018)
   • This work's advantage: First systematic study of TM doping effects in WSTe

Valleytronic Electronics

1. Experimental Milestones:
   • Graphene valley physics first demonstration (Xiao et al., PRL 2007)
   • MoS₂ valley polarization control with circularly polarized light (Zeng et al., Nat. Nanotech. 2012)
   • V-MoS₂ room-temperature valley polarization (Sahoo et al., PRMaterials 2022)
2. Valley Polarization in Janus Materials:
   • Magnetic doping in MoSSe (Peng et al., JPCL 2018)
   • V-WSSe valley polarization 58 meV (Zhao et al., Appl. Surf. Sci. 2019)
   • This work's contribution: Higher WSTe valley polarization (65 meV), first systematic study of strain tuning

Rashba Effect

1. Rashba Splitting in Janus-TMDCs:
   • Theoretical studies of MoSeTe and WSeTe (Hu et al., PRB 2018)
   • This work's αᴿ (422 meVÅ) consistent with literature
2. Strain Tuning:
   • General studies on strain effects on Rashba effect
   • This work provides quantitative data for WSTe

Relative Advantages of This Work

1. First comprehensive study of multifunctional properties of TM-WSTe
2. Systematic investigation of strain effects on valley polarization
3. Prediction of achievable 100% spin polarization
4. Detailed microscopic mechanism analysis

Conclusions and Discussion

Main Conclusions

1. Properties of pristine WSTe:
   • Indirect band gap semiconductor (1.35 eV)
   • Intrinsic Rashba splitting (αᴿ=422 meVÅ) and Zeeman splitting (403 meV)
   • Strain tunable: compression enhances Rashba, tension weakens it
2. TM doping-induced magnetism:
   • Half-metallic ferromagnetism with 100% spin polarization at specific concentrations
   • Fe: 6.25%, 18.75%; Mn: 25%; Co: 18.75%, 25%
   • Maximum magnetic moment: Fe-WSTe 8.48 μB (18.75%)
3. Valley polarization and tuning:
   • Significant valley polarization at 6.25% doping: Fe (65 meV), Mn (54.4 meV), Co (46.3 meV)
   • Biaxial tensile strain can enhance to 112 meV (+72%)
   • Compressive strain weakens valley polarization
4. Application prospects:
   • Spintronics: Half-metallic character suitable for spin injector devices
   • Valleytronic: High valley polarization supports valley Hall effect
   • Multifunctional devices: Coordinated control of spin, valley, and charge degrees of freedom

Limitations

1. Computational method limitations:
   • DFT+U description of strongly correlated systems has limitations
   • Excitonic effects not considered (important for optical properties)
   • Temperature effects not included (all calculations at 0 K)
2. Concentration selection:
   • Only four concentrations examined, potentially missing other interesting concentration points
   • High concentrations (>25%) not explored
3. Defect effects:
   • Only substitutional doping considered; other defect types (interstitials, vacancies) not examined
   • Disorder effects in real samples not simulated
4. Dynamic stability:
   • Molecular dynamics simulations not performed to verify finite-temperature stability
   • Phonon spectrum calculations missing
5. Experimental feasibility:
   • Precise control of doping concentration challenging in experiments
   • Practical methods for strain application not discussed

Future Directions

1. Experimental Verification:
   • Synthesis of TM-WSTe via chemical vapor deposition (CVD) or molecular beam epitaxy (MBE)
   • Characterization of local electronic structure using scanning tunneling microscopy (STM)
   • Measurement of magnetism using magneto-optical Kerr effect (MOKE)
2. Theoretical Extensions:
   • Investigation of additional TM elements (V, Cr, Ni, Cu)
   • Study of co-doping effects
   • Calculation of optical properties and excitonic effects
3. Device Design:
   • Spin field-effect transistor design
   • Valley Hall device prototypes
   • Heterostructures with other 2D materials
4. Dynamics Studies:
   • Spin relaxation time calculations
   • Valley polarization lifetime assessment
   • Transport property simulations
5. Machine Learning Assistance:
   • High-throughput screening for optimal doping elements and concentrations
   • Prediction of novel Janus materials

In-Depth Evaluation

Strengths

1. Strong systematic research:
   • Covers four dimensions: electronic, magnetic, spin, and valley properties
   • Comprehensive comparison of three TM elements and four concentrations
   • Systematic examination of uniaxial/biaxial strain
2. Clear physical picture:
   • Microscopic mechanisms revealed through orbital-resolved density of states
   • Spin texture directly visualizes Rashba effect
   • Spin charge density elucidates magnetic origin
3. Reliable quantitative data:
   • Highly consistent with known literature values (Rashba parameter, Zeeman splitting)
   • Good computational parameter convergence
   • Self-consistent Hubbard U calculation enhances reliability
4. Clear application orientation:
   • Predicted 100% spin polarization directly corresponds to device requirements
   • Strain tuning provides experimentally feasible schemes
   • Valley polarization values in practical range
5. Rigorous writing:
   • Clear structure, rigorous logic
   • Information-rich figures (13 main figures)
   • Detailed data tables (3 tables)

Shortcomings

1. Limited novelty:
   • TM doping-induced magnetism is an established strategy
   • Strain tuning of valley polarization has precedents
   • Main contribution is first systematic study of WSTe
2. Shallow mechanism analysis:
   • Insufficient detailed discussion of microscopic reasons for different TM element effects
   • Concentration-dependent semiconductor-half-metal transition mechanism insufficiently explained
   • Shallow microscopic mechanism analysis of strain effects
3. Insufficient experimental guidance:
   • Feasibility of experimental preparation methods not discussed
   • Lack of connection with existing experimental techniques
   • Missing measurement scheme recommendations
4. Insufficient comparative analysis:
   • Systematic comparison with other Janus materials (MoSSe, WSSe) lacking
   • WSTe's advantages relative to other materials not clearly established
5. Technical details:
   • Magnetic anisotropy energy not calculated (important for magnetic stability)
   • Curie temperature estimation missing
   • Defect formation energy not provided

Impact Assessment

Academic Contribution:

• Fills gap in transition metal doping research for WSTe
• Provides new case for Janus material valleytronic applications
• Expands strain tuning data database

Practical Value:

• Half-metallic character suitable for spintronic devices
• Valley polarization values (65-112 meV) observable at room temperature (kBT≈26 meV)
• Strain engineering scheme experimentally feasible

Reproducibility:

• Detailed computational parameters (energy cutoff, k-points, U values, etc.)
• Uses widely-available VASP software
• Complete structural parameters provided
• Expected good reproducibility

Potential Impact:

• Short-term: Guide WSTe experimental synthesis and characterization
• Medium-term: Promote spin/valleytronic research on Janus materials
• Long-term: Provide material platform for multifunctional quantum devices

Applicable Scenarios

1. Spintronic Devices:
   • Spin injectors (100% spin polarization source)
   • Spin filters
   • Magnetic tunnel junctions
2. Valleytronic Applications:
   • Valley Hall devices
   • Valley photodetectors
   • Valley qubits
3. Multifunctional Devices:
   • Spin-valley coupled transistors
   • Tunable optoelectronic devices
   • Low-power logic devices
4. Basic Research:
   • Spin-orbit coupling physics
   • Two-dimensional magnetism mechanisms
   • Strain engineering effects
5. Inapplicable Scenarios:
   • High-temperature applications (magnetic stability unconfirmed)
   • Applications requiring large band gap (gap only 1.2 eV)
   • Applications requiring intrinsic ferromagnetism (requires doping)

Selected References

1. Methodological Foundation:
   • Kresse & Furthmüller (1996): VASP methodology, PRB 54, 11169
   • Dudarev et al. (1998): DFT+U method, PRB 57, 1505
2. Experimental Comparison:
   • Fu et al. (2020): Fe-MoS₂ room-temperature ferromagnetism, Nat. Commun. 11, 2034
   • Sahoo et al. (2022): V-MoS₂ valley polarization, PRM 6, 085202
3. Theoretical References:
   • Hu et al. (2018): Janus-TMDCs Rashba effect, PRB 97, 235404
   • Peng et al. (2018): MoSSe valley polarization, JPCL 9, 3612
   • Zhao et al. (2019): WSSe TM doping, Appl. Surf. Sci. 490, 172
4. Review Literature:
   • Vitale et al. (2018): Valleytronic review, Small 14, 1801483
   • Liu et al. (2020): 2D materials spintronics, Nano-Micro Lett. 12, 1

Overall Assessment: This is a systematic and rigorous computational materials science paper that comprehensively investigates the multifunctional properties of TM-doped WSTe through first-principles methods. The paper's main value lies in: (1) first systematic study of TM doping effects in WSTe; (2) prediction of achievable half-metallic ferromagnetic states and high valley polarization; (3) provision of quantitative strain tuning schemes. Shortcomings include limited mechanism analysis depth and insufficient experimental guidance. Overall, this work provides important theoretical foundation for Janus material applications in spin/valleytronic electronics, with good academic value and application prospects. Subsequent work should focus on experimental verification and device design.