Strain Mediated Voltage Control of Magnetic Anisotropy and Magnetization Reversal in Bismuth Substituted Yttrium Iron Garnet Films and Meso-structures

Basic Information

• Paper ID: 2501.00980
• Title: Strain Mediated Voltage Control of Magnetic Anisotropy and Magnetization Reversal in Bismuth Substituted Yttrium Iron Garnet Films and Meso-structures
• Authors: Walid Al Misba, Miela Josephine Gross, Kensuke Hayashi, Daniel B. Gopman, Caroline A. Ross, Jayasimha Atulasimha
• Classification: cond-mat.mtrl-sci cond-mat.mes-hall
• Research Institutions: Virginia Commonwealth University, Massachusetts Institute of Technology, Nagoya University, National Institute of Standards and Technology (NIST)
• Paper Link: https://arxiv.org/abs/2501.00980

Abstract

This study reports the modulation of magnetic anisotropy through voltage-induced strain in bismuth-substituted yttrium iron garnet (Bi-YIG) thin films and mesoscale patterned structures deposited on PMN-PT substrates. The research selected specific bismuth content to achieve lower coercivity than YIG and higher magnetostriction, producing significant changes in magnetic hysteresis loops through magnetoelastic effects. By applying voltage to the PMN-PT/SiO₂/Bi-YIG/Pt heterostructure, the piezoelectric substrate was polarized along the thickness direction (011 direction). In-situ magneto-optic Kerr effect (MOKE) microscopy revealed voltage-induced strain modulation of magnetic anisotropy. Under fixed magnetic field, voltage control of the Bi-YIG thin film magnetic domain state enabled 90° magnetic easy-axis switching. The magnetoelectric coefficient of this heterostructure was 1.05×10⁻⁷ s/m, comparable to other ferrimagnetic oxide thin films on ferroelectric substrates. Voltage-controlled magnetization reversal fields in 5-30 micrometer-wide Bi-YIG dots and racetrack structures demonstrated potential applications in energy-efficient nonvolatile storage and neuromorphic computing devices.

Research Background and Motivation

Problem Background

1. Energy Consumption Issues: Current magnetic random-access memory requires current densities of approximately 10¹¹ A/m² for writing with energy consumption around 10 fJ, whereas multiferroic devices require only 1-100 aJ
2. Magnetoelectric Coupling Requirements: Need for electric field control of magnetization to achieve high-density, low-power magnetic storage devices
3. Material Limitations: Although single-phase multiferroic materials directly exhibit magnetoelectric coupling, composite heterostructures provide 3-4 orders of magnitude stronger magnetoelectric coupling

Research Motivation

1. Strain Transfer Mechanism: Utilizing strain transfer mechanisms in ferroelectric-ferrimagnetic composite heterostructures to achieve low thermal dissipation and high magnetoelectric coupling coefficients
2. Material Advantages: Bi-YIG possesses advantages including low loss tangent, large domain wall velocity, low Gilbert damping, and magneto-optical activity
3. Processing Challenges: Addressing lattice mismatch issues in ferrimagnetic garnet growth on piezoelectric compounds

Core Contributions

1. First realization of voltage-controlled 90° magnetic easy-axis switching in Bi-YIG/PMN-PT heterostructures
2. Development of SiO₂ buffer layer technology to resolve lattice matching issues for garnet growth on piezoelectric substrates
3. Achievement of magnetoelectric coefficient of 1.05×10⁻⁷ s/m, comparable to other oxide ferrimagnetic/ferroelectric systems
4. Realization of voltage-controlled magnetization reversal in micrometer-scale patterned structures, demonstrating potential applications in storage and neuromorphic devices
5. In-situ observation of magnetic domain dynamics via MOKE microscopy

Methodology Details

Material Preparation

1. Substrate Treatment: RF magnetron sputtering of 2.4 nm amorphous SiO₂ buffer layer on 0.5 mm thick (011)-oriented PMN-PT substrate
2. Thin Film Growth: Co-sputtering of YIG and BFO targets using pulsed laser deposition (PLD) at room temperature to obtain 45.6 nm thick Bi-YIG thin film with composition Bi₂.₁₃Y₁.₄₀Fe₅Oₓ
3. Post-processing: Annealing in furnace at 600°C for 72 hours to crystallize the garnet structure

Heterostructure Design

The heterostructure consists of PMN-PT/SiO₂/Bi-YIG/Pt, where:

• PMN-PT: Piezoelectric substrate, polarized along 011 direction
• SiO₂: 2.4 nm buffer layer, preventing epitaxial growth of ferrite structure
• Bi-YIG: 45.6 nm ferrimagnetic layer
• Pt: Top electrode

Magnetoelastic Energy Model

The magnetoelastic energy expression is: $F_{me} = -\frac{3}{2}\lambda_s\frac{Y}{1+\nu}\varepsilon_{xx}\sin^2\theta\cos^2\varphi - \frac{3}{2}\lambda_s\frac{Y}{1+\nu}\varepsilon_{yy}\sin^2\theta\sin^2\varphi$

where $\lambda_s \approx -4×10^{-6}$ is the negative magnetostriction coefficient, and $\varepsilon_{xx}$ and $\varepsilon_{yy}$ are strain components.

Experimental Setup

Characterization Methods

1. Structural Characterization: Grazing-incidence X-ray diffraction (GIXD) and X-ray reflectivity (XRR)
2. Magnetic Measurements: Vibrating sample magnetometry (VSM) for in-plane and out-of-plane magnetic hysteresis loops
3. Morphology Observation: Scanning electron microscopy (SEM) for grain structure analysis
4. Magnetic Domain Observation: In-situ magneto-optic Kerr effect (MOKE) microscopy

Patterning Process

Optical lithography and ion beam etching to fabricate elliptical and racetrack structures with minimum feature size of 5 μm

Experimental Conditions

• Polarization voltage: 450 V, duration 90 minutes
• Testing voltage range: 0-450 V, 50 V steps
• MOKE light source: Blue light (λ ≈ 465 nm)
• Magnetic field range: ±88 mT

Experimental Results

Structural and Magnetic Characterization

1. Crystal Structure: GIXD shows characteristic polycrystalline garnet peaks without strong texture
2. Magnetic Properties: Saturation magnetization 101±5 kA/m, in-plane coercivity 10±5 mT
3. Microstructure: Grain size 1-3 μm with minor amorphous regions

Magnetic Anisotropy Modulation

1. Strain Effects: Compressive strain along x̂ direction increases, coercivity increases from 25±2 mT to 27±2 mT
2. Easy-Axis Switching: With increasing voltage, magnetic easy-axis switches from ŷ to x̂ direction
3. Squareness Variation: Squareness along x̂ direction increases with voltage, opposite trend for ŷ direction

Magnetoelectric Coefficient

Calculated magnetoelectric coefficient αₑ = 1.05×10⁻⁷ s/m, with maximum value achieved during voltage change from 0 V to -50 V.

Microstructure Device Performance

1. Elliptical Structures: Switching field decreases from high field to 8 mT as voltage decreases from 450 V to 0 V
2. Racetrack Structures: Domain wall propagation field decreases from 7 mT (0 V) to 6 mT (450 V)

Related Work

Magnetoelectric Coupling Mechanisms

1. Strain Transfer: Mechanical strain transfer at ferroelectric-ferrimagnetic interfaces
2. Interface Effects: Spin density of states modulation
3. Ion Migration: Voltage-driven oxygen ion migration

Material System Comparison

Advantages compared to other systems:

• Stronger magnetoelectric coupling than single-phase multiferroic materials
• Lower damping and faster magnetization control than metallic ferromagnetic materials
• Successfully addresses garnet growth challenges on piezoelectric substrates

Conclusions and Discussion

Main Conclusions

1. Successfully demonstrated voltage-controlled 90° magnetic easy-axis switching in Bi-YIG thin films
2. SiO₂ buffer layer technology effectively resolved lattice matching issues
3. Magnetoelectric coefficient comparable to other oxide systems, showing good application prospects
4. Micrometer-scale devices demonstrate potential in storage and neuromorphic computing

Limitations

1. Broad Linewidth: Polycrystalline thin film ferromagnetic resonance linewidth ~200 mT, far exceeding single-crystal thin film value of 5 mT
2. Stress Effects: High film stress affects magnetic properties
3. Process Optimization: Further optimization of process parameters and composition required

Future Directions

1. Optimize thin film growth processes to reduce linewidth
2. Explore resonance effects to enhance magnetoelectric response
3. Develop practical device prototypes based on this technology

In-Depth Evaluation

Strengths

1. Technical Innovation: First realization of 90° easy-axis switching in Bi-YIG/PMN-PT system
2. Process Breakthrough: SiO₂ buffer layer technology provides new pathway for garnet/piezoelectric heterostructures
3. Systematic Research: Complete research chain from thin films to patterned structures
4. Practical Value: Demonstrates potential applications in low-power storage devices

Limitations

1. Performance Constraints: Broad linewidth from polycrystalline structure limits device performance
2. Mechanism Analysis: Relatively simple theoretical analysis of magnetic domain dynamics
3. Device Integration: Lacks discussion of compatibility with existing semiconductor processes

Impact

1. Academic Contribution: Provides new material systems and processing methods for magnetoelectric composite materials
2. Application Prospects: Establishes technical foundation for next-generation low-power magnetic storage devices
3. Process Value: SiO₂ buffer layer technology extensible to other garnet compositions and substrate materials

Applicable Scenarios

1. Magnetic Storage Devices: Magnetic random-access memory (MRAM)
2. Neuromorphic Computing: Neural synaptic devices based on domain wall dynamics
3. Spintronics: Spin wave devices and magneto-optical devices
4. Sensors: Current sensors and magnetic field sensors

References

The paper cites 60 relevant references covering multiple fields including multiferroic materials, magnetoelectric coupling, garnet thin film growth, and spintronics, providing solid theoretical foundation and technical background for this research.

Technical Summary:

• Innovatively resolved garnet growth challenges on piezoelectric substrates
• Achieved voltage-controlled 90° magnetic easy-axis switching
• Demonstrated complete research pathway from fundamental materials to functional devices
• Provided new technical solutions for low-power magnetoelectric devices