We report the emergence of an uncharted phenomenon, termed $d$-wave polarization-spin locking (PSL), in two-dimensional (2D) altermagnets. This phenomenon arises from nontrivial Berry connections, resulting in perpendicular electronic polarizations in the spin-up and spin-down channels. Symmetry-protected $d$-wave PSL occurs exclusively in $d$-wave altermagnets with tetragonal layer groups. To identify 2D altermagnets capable of exhibiting this phenomenon, we propose a symmetry-eigenvalue-based criterion, and a rapid method by observing the spin-momentum locking. Using first-principles calculations, monolayer Cr$_2$X$_2$O (X = Se, Te) characterizes promising candidates for $d$-wave PSL, driven by the unusual charge order in these monolayers. This unique polarization-spin interplay leads to spin-up and spin-down electrons accumulating at orthogonal edges, enabling potential applications as spin filters or splitters in spintronics. Furthermore, $d$-wave PSL introduces an unexpected spin-driven ferroelectricity in conventional antiferromagnets. Such magnetoelectric coupling positions $d$-wave PSL as an ideal platform for fast antiferromagnetic memory devices. Our findings not only expand the landscape of altermagnets, complementing conventional collinear ferromagnets and antiferromagnets, but also highlight tantalizing functionalities in altermagnetic materials, potentially revolutionizing information technology.
- Paper ID: 2502.16103
- Title: d-Wave Polarization-Spin Locking in Two-Dimensional Altermagnets
- Authors: Zhao Liu, Nikhil V. Medhekar
- Classification: cond-mat.mes-hall, cond-mat.mtrl-sci
- Publication Date: February 22, 2025
- Paper Link: https://arxiv.org/abs/2502.16103
This paper reports a novel physical phenomenon in two-dimensional altermagnetic materials: d-wave polarization-spin locking (PSL). This phenomenon originates from non-trivial Berry connections, leading to mutually perpendicular electronic polarizations in spin-up and spin-down channels. Symmetry-protected d-wave PSL appears exclusively in d-wave altermagnets with tetragonal layer groups. The authors propose screening criteria based on symmetry eigenvalues and a rapid identification method through observation of spin-momentum locking. First-principles calculations demonstrate that monolayer Cr2X2O (X = Se, Te) are promising candidate materials for d-wave PSL. This unique polarization-spin interaction causes spin-up and spin-down electrons to accumulate at orthogonal edges, with potential applications as spin filters or separators in spintronics.
- Emerging Physics in Altermagnets: Traditional collinear antiferromagnets (AFs) exhibit lifting of Kramers degeneracy without spin-orbit coupling, catalyzing rapid development of altromagnetism (AM).
- Gap in Berry Phase Physics: While Berry curvature-induced anomalous Hall effects in AM have been revealed, the intrinsic connection between Berry connection-induced quantized electronic polarization and antiferromagnetic order remains unreported.
- Demand for Functional Materials: Development of magnetic materials with multifunctional properties is needed, particularly for spintronics and magnetoelectric storage devices.
- Explore topological effects of Berry connections in AM, complementing existing Berry curvature studies
- Identify novel polarization-spin coupling mechanisms
- Develop two-dimensional magnetic materials with practical application value
- Discovery of New Physical Phenomenon: First report of d-wave polarization-spin locking (PSL) in two-dimensional AM
- Theoretical Framework Establishment: Construction of minimal models describing d-wave PSL based on magnetic layer group theory
- Screening Criteria Development: Establishment of criteria based on symmetry eigenvalues and rapid screening methods
- Material Prediction: First-principles calculations identify monolayer Cr2X2O as candidate materials
- Application Prospects: Revelation of potential applications in spin filtering/separation and antiferromagnetic storage
Investigation of coupling relationships between electronic polarization and spin in two-dimensional altermagnets, particularly seeking materials and mechanisms that produce mutually perpendicular polarizations for spin-up and spin-down electrons.
Based on layer group G=P4/m, combined with magnetic order to construct magnetic layer group:
R=[E∣∣H]+[C2∣∣C4+H]
Where:
- C2: spin-flip symmetry
- C4+: four-fold counterclockwise rotation about z-axis
- H=Pmmm: halving subgroup
The magnetic layer group R generates unique d-wave spin-momentum locking, satisfying:
[C2∣∣C4+]E(kx,ky,σ)=E(ky,−kx,−σ)
For insulators, electronic polarization is calculated through parity at time-reversal invariant momentum (TRIM) points:
(pele,x,σ,pele,y,σ)=(2Γ−,σ−X−,σ,2Γ−,σ−Y−,σ)mod1
d-wave PSL must satisfy:
pele,x,σ=pele,y,−σX−,σ+Y−,σ=1mod2
Quick identification of potential d-wave PSL materials through observation of d-wave spin-momentum locking.
Only d-wave AM in tetragonal crystal systems can exhibit symmetry-protected d-wave PSL.
- First-Principles Calculations: Density functional theory (DFT)
- Berry Phase Method: Electronic polarization calculation
- Wilson Loop Operator: Wannier charge center analysis
- Band Structure Calculations: Investigation of spin splitting and edge states
- Primary subjects: Monolayer Cr2Se2O and Cr2Te2O
- Comparative materials: V2Se2O, V2Te2O, Fe2Se2O
- Construction of ribbon structures with length 20.5 a0 for edge state studies
- Analysis of parity distribution of 30 valence bands at four TRIM points
- Calculation of magnetic anisotropy energy to assess magnetization reversal difficulty
Parity Distribution:
| TRIM | (+,↑) | (-,↑) | (+,↓) | (-,↓) |
|---|
| Γ | 8 | 7 | 8 | 7 |
| X | 10 | 5 | 7 | 8 |
| Y | 7 | 8 | 10 | 5 |
| M | 5 | 10 | 5 | 10 |
Electronic Polarization:
- (pele,x,↑,pele,y,↑)=(0,21)
- (pele,x,↓,pele,y,↓)=(21,0)
- x-direction ribbon structure: Only spin-down bands exist within the bulk band gap
- y-direction ribbon structure: Only spin-up bands exist within the bulk band gap
- Charge density primarily localized at two edges
- Easy axis direction: Out-of-plane
- Energy barrier: Approximately 0.8 meV/unit cell
- Comparable to AM candidate material Mn5Si3
Actual valence state is Cr22+Se21−O2−, rather than formal valence Cr23+Se22−O2−
Strong hybridization between Cr1's dxy orbital and Se's px/y orbitals, leading to charge transfer from Se to Cr1
- x-direction: 9 of 12 WCCs near x=0 a0, 3 near x=0.5 a0
- y-direction: 2 WCCs displaced from atomic positions, confirming orbital hybridization
- Theoretical Foundations: Establishment and refinement of magnetic space group theory
- Experimental Verification: Observation of Kramers degeneracy lifting in MnTe, CrSb, RuO2
- Physical Phenomena: Anomalous Hall effect, chiral magnons, spin transport
- Berry Curvature Effects: Geometric origin of anomalous Hall effect
- Berry Connection Effects: Foundation of modern polarization theory
- Topological Invariants: Quantized polarization as topological classification
- Spin-Driven Ferroelectricity: Polarization induced by non-collinear magnetic order
- Magnetoelectric Coupling: Interaction between magnetic order and electric polarization
- Storage Device Applications: Fast antiferromagnetic memory devices
- New Physical Phenomenon: d-wave PSL is a novel topological phenomenon in AM
- Material Realization: Monolayer Cr2X2O are ideal candidate materials
- Application Prospects: Important application value in spintronics and magnetoelectric storage
- Theoretical Framework: Complete system of symmetry analysis and material screening established
- Material Scope: Currently limited to d-wave AM in tetragonal crystal systems
- Experimental Verification: Theoretical predictions require experimental confirmation
- Ferroelectric Properties: Not conventional ferroelectrics due to P symmetry
- Stability: Practical fabrication and stability of monolayer materials require verification
- Experimental Synthesis: Synthesis and characterization of monolayer Cr2X2O materials
- Device Applications: Development of spintronic devices based on d-wave PSL
- Theoretical Extension: Extension of theoretical framework to three-dimensional systems
- New Material Exploration: Discovery of additional candidate materials with d-wave PSL
- Theoretical Innovation: First combination of Berry connections with AM, discovering new topological phenomena
- Strong Systematicity: Complete system from symmetry analysis to material prediction
- Sufficient Calculations: Multiple computational methods mutually verify reliable results
- Application-Oriented: Clear application scenarios and technical pathways
- Clear Writing: Rigorous logic and abundant figures
- Lack of Experiments: Pure theoretical work without experimental verification
- Limited Materials: Relatively limited types of candidate materials
- Mechanism Depth: Discussion of anomalous valence state formation mechanism could be deeper
- Quantitative Analysis: Insufficient numerical precision and error analysis for some physical quantities
- Academic Value: Provides new research directions and theoretical tools for AM field
- Technical Potential: Important application prospects in future spintronic devices
- Methodological Significance: Screening criteria applicable to discovery of more functional materials
- Interdisciplinary Significance: Connects multiple fields of topological physics, magnetism, and ferroelectricity
- Basic Research: Theoretical research in AM and topological physics
- Material Design: Rational design of two-dimensional magnetic materials
- Device Development: Spin filters, spin separators, and magnetoelectric storage devices
- Computational Materials Science: High-throughput material screening and property prediction
This paper cites 97 important references covering theoretical foundations of AM, experimental progress, Berry phase physics, multiferroic materials, and other related fields, providing solid theoretical basis and comprehensive background knowledge.
Overall Assessment: This is a high-quality theoretical physics paper that discovers new physical phenomena in two-dimensional altermagnets, establishes a complete theoretical framework, and predicts candidate materials with practical application value. The paper demonstrates excellence in theoretical innovation, methodological systematicity, and application prospects, making important contributions to the development of the AM field.