AC Current-Driven Magnetization Switching and Nonlinear Hall Rectification in a Magnetic Topological Insulator

Basic Information

• Paper ID: 2504.10450
• Title: AC Current-Driven Magnetization Switching and Nonlinear Hall Rectification in a Magnetic Topological Insulator
• Authors: Yuto Kiyonaga, Masataka Mogi, Ryutaro Yoshimi, Yukako Fujishiro, Yuri Suzuki, Max T. Birch, Atsushi Tsukazaki, Minoru Kawamura, Masashi Kawasaki, Yoshinori Tokura
• Classification: cond-mat.mes-hall, cond-mat.mtrl-sci, physics.app-ph
• Publication Date: 2025 (preprint)
• Paper Link: https://arxiv.org/abs/2504.10450

Abstract

This study demonstrates AC current-driven magnetization switching in a semimagnetic topological insulator (Cr,Bi,Sb)₂Te₃/(Bi,Sb)₂Te₃ with a threshold current density as low as 1.5×10⁹ A/m². Time-domain Hall voltage measurements using an oscilloscope reveal strong nonlinear and nonreciprocal Hall responses during magnetization reversal. Fourier analysis of the time-varying Hall voltage identifies higher harmonic signals and rectified DC components, highlighting complex interactions between the applied current, external magnetic field, and magnetization dynamics. Furthermore, hysteretic behavior in current-voltage characteristics under dual-frequency excitation produces frequency mixing effects, opening new pathways for multifunctional spintronic devices.

Research Background and Motivation

Problem Definition

1. Core Issue: Exploring AC current-driven magnetization dynamics in topological insulators and the resulting nonlinear Hall effects
2. Technical Challenge: Conventional magnetization switching requires large current densities (10¹⁰-10¹¹ A/m²), producing severe Joule heating that obscures intrinsic nonlinear signals
3. Scientific Significance: Understanding nonlinear transport phenomena arising from spin-charge coupling, opening possibilities for advanced spintronic functionalities

Research Motivation

1. Energy Efficiency Requirement: Seeking low-power magnetization control methods
2. Multifunctionality: Exploring devices simultaneously possessing magnetization switching and nonlinear signal processing capabilities
3. Fundamental Physics: Investigating intrinsic nonlinear Hall effects during magnetization dynamics

Core Contributions

1. First Demonstration: Demonstrating continuous AC current-driven magnetization reversal in semimagnetic topological insulators with a threshold current density of only 1.5×10⁹ A/m²
2. Time-Domain Measurement Technique: Developing real-time Hall voltage measurement methods for direct observation of magnetization reversal processes
3. Nonlinear Hall Effect: Discovering strong nonlinear and hysteretic Hall responses associated with magnetization reversal
4. Frequency Mixing Phenomenon: Revealing asymmetric frequency mixing effects produced by magnetization switching hysteresis
5. Multifunctional Device Concept: Demonstrating the potential for integrating magnetization switching, signal processing, and frequency conversion functionalities

Methodology Details

Experimental Design

Sample Preparation:

• Material: (Cr,Bi,Sb)₂Te₃/(Bi,Sb)₂Te₃ heterostructure thin films
• Substrate: InP(111)
• Preparation Method: Molecular beam epitaxy
• Device Structure: 10 μm wide Hall bar device

Measurement System:

• Time-Domain Measurement: Real-time Hall voltage monitoring via oscilloscope
• Current Source: Keithley 6221 AC excitation generation
• Environment: PPMS system at temperature 2.5 K
• Magnetic Field: In-plane field 0.01-2 T

Technical Innovations

1. Real-Time Monitoring Technique:
   • Simultaneous measurement of Hall voltage V_H(t) and longitudinal resistance R_xx
   • Longitudinal resistance serving as thermometer to exclude thermal effects
   • Antisymmetrization processing to eliminate background signals
2. Multi-Frequency Analysis Method:
   • Fourier transform decomposition of time-varying Hall voltage
   • Identification of phase delays and hysteretic responses
   • Dual-frequency excitation for studying frequency mixing effects
3. Physical Mechanism Analysis:
   • Spin-orbit torque: τ⃗ × (σ⃗ × M⃗)
   • Damping-like SOT driving perpendicular magnetization reversal
   • Anomalous Hall effect detecting magnetization state

Experimental Setup

Material Parameters

• Hall Conductivity: ~0.3 × e²/h (T=2.5K)
• Curie Temperature: T_C ~ 40 K
• Resistance Values: Longitudinal resistance ~10 kΩ, Hall resistance ~2 kΩ
• Magnetic Anisotropy: Perpendicular magnetic anisotropy

Measurement Conditions

• Temperature: 2.5 K (below T_C, avoiding thermal effects)
• Frequency Range: 11 Hz - 10 kHz
• Current Amplitude: 14-500 μA
• Magnetic Field Configuration: In-plane auxiliary field 0.01-2 T

Comparative Experiments

1. Pulse vs. AC: Comparing magnetization switching effects between pulsed and AC currents
2. Different Magnetic Fields: Response differences at 0.01 T vs. 2 T in-plane fields
3. Frequency Dependence: Response characteristics at multiple frequencies
4. Dual-Frequency Excitation: Frequency mixing experiments at 37 Hz + 125 Hz

Experimental Results

Main Results

1. AC Current-Driven Magnetization Switching:

• Threshold Current: ~150 μA (1.5×10⁹ A/m²)
• Switching polarity varies with current and magnetic field directions
• Hall resistance R_xy undergoes sign reversal at threshold

2. Nonlinear Hall Response:

• Low Current: Approximately linear relationship
• High Current: Butterfly-shaped hysteresis loop
• Strong current nonlinearity and phase delay

3. Magnetic Field Dependence:

• 0.01 T: Complete magnetization reversal with significant hysteresis
• 2 T: Magnetization tilting with hysteresis-free rectification response

Fourier Analysis Results

Spectral Decomposition:

V_H(t) = V_H^(0) + V'_H^(1)sin(ωt) + V''_H^(1)cos(ωt) + 
         V'_H^(2)cos(2ωt) + V''_H^(2)sin(2ωt) + ...

Key Findings:

• Strong second harmonic component V'_H^(2)
• Phase-shifted components V''_H^(n) appearing only at 0.01 T
• DC component V_H^(0) reflecting rectification effects

Frequency Mixing Experiments

Dual-Frequency Excitation (f₁=37 Hz, f₂=125 Hz):

• Low Magnetic Field (0.01 T): f₁+f₂ component >> |f₁-f₂| component
• High Magnetic Field (2 T): f₁+f₂ component ≈ |f₁-f₂| component
• Physical Mechanism: Hysteresis threshold breaks polynomial nonlinearity symmetry

Numerical Simulation Verification

• Simplified threshold model reproduces experimental observations
• I_th = 150 μA: Asymmetric frequency mixing
• I_th = 0 μA: Symmetric frequency mixing

Related Work

Topological Insulator Spintronics

1. Spin-Orbit Torque: Efficient spin-charge conversion in TI surface states
2. Magnetization Switching: Low-power switching in TI/ferromagnet heterostructures
3. Anomalous Hall Effect: Large anomalous Hall conductivity in magnetic TIs

Nonlinear Hall Effect

1. Second Harmonic Detection: Common probe method for magnetization oscillations
2. Thermoelectric Effects: Interference from Nernst and spin Seebeck effects
3. Time-Domain Measurements: Studies of ultrafast magnetization switching and domain wall motion

Frequency Mixing Technology

1. Traditional Nonlinearity: Frequency conversion based on polynomial expansion
2. Threshold Nonlinearity: Asymmetric responses from switching behavior
3. Application Prospects: Signal processing and frequency selection

Conclusions and Discussion

Main Conclusions

1. Efficient Magnetization Control: Achieving AC magnetization switching with ultra-low threshold current density
2. Rich Nonlinear Phenomena: Discovering multiple nonlinear responses associated with magnetization dynamics
3. Tunable Characteristics: Controlling hysteretic behavior presence through magnetic field strength
4. Novel Frequency Mixing: Asymmetric frequency conversion based on threshold nonlinearity

Physical Mechanism Understanding

Spin-Orbit Torque Mechanism:

• Electron spin and momentum locking in TI surface states
• Current generating spin polarization perpendicular to current direction
• Damping-like SOT tilting perpendicular magnetization toward current direction

Nonlinear Response Sources:

1. Intrinsic Mechanism: Magnetization dynamics and threshold switching
2. Extrinsic Effects: Thermoelectric effects and magnon scattering
3. Dominant Factor: Hysteresis behavior confirms magnetization dynamics as primary cause

Limitations

1. Temperature Constraint: Experiments conducted only at 2.5 K; room-temperature operation requires high-T_C materials
2. Frequency Range: Parasitic capacitance affects measurement accuracy at high frequencies
3. Thermal Effect Separation: Complete quantitative separation of various nonlinear contributions remains challenging
4. Device Optimization: Further optimization of material and structural parameters needed

Future Directions

1. Room-Temperature Devices: Developing high Curie temperature magnetic TI materials
2. High-Frequency Applications: Improving measurement circuits to extend frequency range
3. Neuromorphic Computing: Utilizing nonlinearity and memory characteristics for reservoir computing
4. Integrated Devices: Design and fabrication of multifunctional spintronic devices

In-Depth Evaluation

Strengths

1. Technical Innovation:
   • First systematic study of AC-driven magnetization dynamics in TIs
   • Innovative real-time measurement and analysis methods
   • Discovery of novel nonlinear physical phenomena
2. Experimental Design:
   • Rigorous temperature control excluding thermal effects
   • Multi-dimensional comparative experiments verifying mechanisms
   • Numerical simulations supporting experimental observations
3. Scientific Value:
   • Deepening understanding of spin-charge coupling
   • Providing physical foundation for multifunctional devices
   • Bridging fundamental physics and application needs

Limitations

1. Temperature Constraint: Low-temperature experiments limit practical applicability
2. Material Specificity: Results may be limited to specific TI material systems
3. Quantitative Analysis: Quantitative separation of various nonlinear contributions requires further refinement
4. Device Engineering: Considerable distance remains from laboratory demonstration to practical devices

Impact Assessment

Academic Impact:

• Opening new direction in nonlinear TI spintronics
• Providing experimental foundation for related theoretical development
• Advancing time-domain measurement techniques

Application Prospects:

• Low-power magnetic memory
• Spintronic signal processors
• Neuromorphic computing elements
• Frequency conversion and rectifier devices

Applicable Scenarios

1. Fundamental Research: Investigation of magnetization dynamics and nonlinear transport mechanisms
2. Device Development: Prototype multifunctional spintronic devices
3. Technical Applications: Low-power switches, signal processing, neural network hardware
4. Methodology: Providing examples for similar studies in other magnetic materials

References

The paper cites 43 important references covering:

• Fundamental theory of spin transfer torque and spin-orbit torque 1-3
• Magnetic and transport properties of topological insulators 20,24,25
• Nonlinear Hall effects and time-domain measurement techniques 12,16-19
• Frequency mixing and neuromorphic computing applications 27,34-39

Summary: This study discovers rich AC current-driven magnetization dynamics phenomena and associated nonlinear Hall effects in semimagnetic topological insulators, providing important physical foundation and technical pathways for developing novel spintronic devices integrating multiple functionalities. Although currently verified only at low temperatures, the revealed physical mechanisms and device concepts possess significant scientific value and application prospects.