Spin-orbit interaction in tubular prismatic nanowires

Basic Information

• Paper ID: 2506.07677
• Title: Spin-orbit interaction in tubular prismatic nanowires
• Authors: Anna Sitek, Sigurdur I. Erlingsson, Andrei Manolescu
• Classification: cond-mat.mes-hall
• Publication Date: October 16, 2025 (arXiv preprint)
• Paper Link: https://arxiv.org/abs/2506.07677

Abstract

This paper presents a theoretical investigation of spin-orbit interaction (SOI) in the outer shell regions of core-shell nanowires, which can function as tubular prismatic conductors. The polygonal cross-section of the nanowire induces non-uniform localization of electrons along the wire's perimeter. Notably, low-energy electrons accumulate in corner regions, and in the narrow shell limit, conducting channels form along sharp edges. Conversely, high-energy electrons migrate toward face regions. These two groups of states can be separated by large energy gaps, exceeding room temperature energy in triangular geometries. The study compares the effects of spin-orbit interaction on corner and edge states in hexagonal and triangular shells, as well as triangular shells grown on triangular cores. The findings reveal that spin-orbit splitting and the degeneracy of energy states at finite wave vectors strongly depend on the tube geometry.

Research Background and Motivation

Research Problem

This paper addresses the theoretical description of spin-orbit interaction in core-shell nanowires, particularly the SOI effects in tubular structures with polygonal cross-sections.

Significance

1. Quantum Device Applications: SOI plays a critical role in spin-orbit qubits, spin transistors, and spin filters
2. Majorana State Realization: SOI is a necessary condition for forming Majorana states in semiconductor nanowires, which is crucial for topological quantum computing
3. Geometric Effects Exploration: The electron localization phenomena induced by polygonal cross-sections and their interaction with SOI remain insufficiently understood

Limitations of Existing Approaches

• Most research focuses on single-material systems or cylindrical structures
• Band structure models for SOI in prismatic shells are lacking or limited
• The influence of internal geometric structures on SOI has been overlooked

Research Motivation

The authors propose utilizing the outer shell regions of core-shell nanowires to host Majorana states, requiring a deep understanding of how prismatic geometry affects SOI to provide theoretical foundations for device design.

Core Contributions

1. Established a theoretical model for SOI in prismatic tubular nanowires: Based on the k·p method, accounting for geometric effects of polygonal cross-sections
2. Revealed the decisive influence of geometry on SOI: Discovered that hexagonal, triangular, and Tri-Hex structures exhibit different spin-orbit splitting characteristics
3. Proposed an SOI enhancement mechanism: Significant enhancement of intrinsically weak SOI through controlled core-shell material mixing
4. Discovered unique properties of triangular shells: Exhibiting three independent wires at low energy and an interacting system at high energy
5. Provided theoretical guidance for band gap engineering: Triangular geometry can produce band gaps exceeding room temperature

Methodology Details

Task Definition

Investigation of spin-orbit interaction of electrons in InP-InAs core-shell nanowires, with inputs of geometric and material parameters, and outputs of band structure and spin-orbit splitting.

Model Architecture

Eight-band Kane Hamiltonian

The system is described using an eight-band Kane model:

H = [H_cc  H_cv]
    [H_cv† H_vv]

where H_cc and H_vv describe the conduction and valence bands respectively, and H_cv is the coupling term.

Conduction Band Hamiltonian

H_cc = (p²/2m₀ + V(x,y))I₂×₂

The potential energy comprises two components:

V(x,y) = V_BO(x,y) + V_E(x,y)

• V_BO: Extended band offset potential
• V_E: External electric field potential

Effective Hamiltonian After Folding Transformation

Through the folding transformation, an effective Hamiltonian describing only conduction electrons is obtained:

H_eff = {ℏ²/2m* (k_z² - ∂²/∂x² - ∂²/∂y²) + V(x,y)}I₂×₂ + k_z(αₓσₓ + αᵧσᵧ)

where the Rashba coefficients are:

αₓ(x,y) = -α₀ ∂V/∂y
αᵧ(x,y) = α₀ ∂V/∂x

Technical Innovations

1. Polar coordinate grid discretization: Developed numerical methods applicable to arbitrary polygonal cross-sections
2. Material mixing modeling: Introduced a mixing length parameter r to describe gradual mixing of core-shell materials
3. Geometric constraint handling: Overlaid polygonal constraints on polar coordinate grids to precisely describe shell regions
4. Boundary condition implementation: Applied Dirichlet boundary conditions at shell-vacuum and core-shell interfaces

Experimental Setup

Material Parameters

• InAs shell: E_g = 417 meV, Δ_so = 390 meV, P₀ = 9×10⁻¹⁰ eVs
• InP core: E_g = 1423.6 meV
• Conduction band offset: V_CBO = 656.6 meV

Geometric Parameters

• Core radius: R_c = 40 nm (20 nm in some cases)
• Shell thickness: d = 8-24 nm
• Mixing length: r = 2 nm to r = d

Numerical Settings

• Hexagonal shell: >6000 grid points
• Triangular wire: >7000 grid points
• Tri-Hex structure: 6200-7200 grid points

Experimental Results

Main Results

Transverse State Characteristics

1. Electron Localization Patterns:
   • Low-energy electrons accumulate in corner regions
   • High-energy electrons distribute in face regions
   • Corner states form independent conducting channels in triangular and Tri-Hex structures
2. Band Gap Magnitudes:
   • Hexagonal: Δ_Hex = 6 meV
   • Triangular: Δ_Tri = 33 meV
   • Tri-Hex: Δ_Tri-Hex = 31 meV

SOI Effects on Different Geometries

Hexagonal Shell:

• SOI only lifts four-fold degeneracy when k_z ≠ 0
• All states maintain orbital degeneracy at k_z = 0
• SOI effects weaken with increasing shell thickness

Triangular Shell:

• Corner states behave as three independent wires: q = 0.44×10⁷ m⁻¹, α ≈ 15 meVnm
• Edge state splitting pattern is complex: non-degenerate states q ≈ 0.88×10⁷ m⁻¹, α ≈ 30 meVnm
• Lack of inversion symmetry leads to partial degeneracy lifting

Tri-Hex Structure:

• Behavior similar to triangular shells
• Larger corner regions require larger mixing lengths for SOI effects to manifest

SOI Enhancement Effect

When mixing length r = d, SOI effects are significantly enhanced:

• Corner state energy dispersion becomes non-monotonic
• Energy level crossings appear at smaller k_z
• Triangular shell splitting increases approximately three-fold

External Electric Field Effects

Upon application of perpendicular electric field:

• Degeneracy at k_z = 0 is lifted
• Triangular shells exhibit three independent wires at low energy (energy level crossings)
• Edge states exhibit interacting characteristics (energy level repulsion)

Related Work

This work builds upon the following research foundations:

1. Electronic structure of core-shell nanowires: Bertoni et al.'s studies on GaAs/AlGaAs radial heterostructures
2. SOI theoretical models: k·p theory based on Rashba and Dresselhaus SOI
3. Polygonal quantum rings: Authors' previous work on electron localization in polygonal quantum rings
4. Majorana state research: Theoretical proposals for realizing topological superconductivity using core-shell nanowires

Conclusions and Discussion

Main Conclusions

1. Geometry Determines SOI Characteristics: The shape of the polygonal cross-section strongly influences spin-orbit splitting patterns
2. Material Engineering Enhances SOI: Effective control of SOI strength through controlled core-shell material mixing
3. Unique Properties of Triangular Structures: Enable transition from independent wires to interacting systems
4. Large Gap Protection: Triangular geometry can produce protective band gaps exceeding room temperature

Limitations

1. Neglected Coulomb Interactions: Hartree potential between electrons was omitted for computational simplification
2. Ideal Geometry Assumption: Geometric imperfections in actual devices may affect results
3. Fixed Material Parameters: Only the InP-InAs material system was considered

Future Directions

1. Experimental Verification: Experimental measurements needed to verify theoretical predictions of SOI characteristics
2. Device Applications: Exploration of applications in spintronics devices
3. Material System Extension: Investigation of SOI properties in other III-V material combinations
4. Disorder Effects: Consideration of interface roughness and impurity effects on SOI

In-Depth Evaluation

Strengths

1. Rigorous Theoretical Method: Based on mature k·p theory with complete mathematical derivations
2. Innovative Numerical Methods: Developed grid methods applicable to arbitrary polygonal geometries
3. Clear Physical Picture: Effectively explains geometric shape effects on electronic states
4. High Practical Value: Provides important guidance for Majorana device design
5. Comprehensive and Systematic Results: Covers multiple geometries and parameter combinations

Weaknesses

1. Lack of Experimental Comparison: Theoretical results require more experimental verification
2. Temperature Effects Not Considered: Thermal effects in actual devices may be important
3. Missing Transport Properties: Does not include calculations of transport characteristics such as conductance

Impact

1. Academic Contribution: Provides important supplement to nanowire SOI theory
2. Application Prospects: Offers guidance for quantum device design
3. Method Value: Numerical methods can be generalized to other geometric structures

Applicable Scenarios

1. Qubit Design: Optimization of spin-orbit qubits
2. Topological Devices: Theoretical design of Majorana fermion devices
3. Spintronics: SOI-based spin manipulation devices

References

The paper cites 62 related references, primarily including:

• Fundamental SOI theory literature (Rashba effect, k·p method)
• Experimental studies on core-shell nanowires
• Theoretical research on Majorana states
• Authors' previous related work