Model of dark current in silicon-based barrier impurity band infrared detector devices

Basic Information

• Paper ID: 2507.14923
• Title: Model of dark current in silicon-based barrier impurity band infrared detector devices
• Authors: Mengyang Cui, Chengduo Hu, Qing Li, Hongxing Qi
• Classification: physics.app-ph cond-mat.str-el
• Publication Date: October 16, 2025
• Paper Link: https://arxiv.org/abs/2507.14923v2

Abstract

Dark current in silicon-based barrier impurity band (BIB) infrared detectors has long been a critical limiting factor for device performance. This work proposes a chiral phonon-assisted spin current model to explain the parabolic dark current behavior observed at low bias voltages. Simultaneously, space-charge-limited charge transport theory is employed to elucidate the dark current generation mechanisms across the entire operating voltage range.

Research Background and Motivation

Research Problem

1. Core Issue: Dark current in silicon-based BIB infrared detectors is a critical performance-limiting factor, and existing theories cannot adequately explain its complex current-voltage characteristics
2. Specific Manifestations: Experimentally observed dark current characteristics exhibit different operating regimes: initial nonlinear increase, sudden transition to linear ohmic conduction, and eventual current saturation
3. Special Phenomena: Devices occasionally prepared under non-ideal conditions exhibit negative differential resistance (NDR) phenomena

Significance

1. Astronomical Detection Applications: BIB detectors play a crucial role in astronomical observations, with dark current directly affecting detection accuracy
2. Device Optimization Requirements: Understanding dark current mechanisms is essential for noise suppression and improving device practicality
3. Theoretical Gap: Lack of specialized dark current models for silicon-based BIB devices

Limitations of Existing Methods

1. Inadequacy of Traditional Models: Existing theories cannot explain parabolic dark current behavior at low bias voltages
2. Missing Mechanistic Understanding: Lack of unified understanding of dark current generation mechanisms across the entire operating voltage range
3. Neglect of Superconducting Phenomena: Failure to consider possible superconducting properties of silicon-based materials at ultra-low temperatures

Core Contributions

1. First Proposal of a specialized dark current model for silicon-based BIB devices
2. Innovative Theoretical Framework: Proposes a chiral phonon-assisted spin current model to explain parabolic dark current behavior at low bias voltages
3. Unified Mechanism Description: Employs space-charge-limited charge transport theory to elucidate dark current mechanisms across the full voltage range
4. Integration of Superconducting Effects: Incorporates superconducting phenomena at ultra-low temperatures into the theoretical framework for BIB devices
5. Quantitative Predictive Capability: Provides a theoretical model capable of quantitatively predicting dark current magnitude

Detailed Methodology

Theoretical Foundation

Cooper Pair Formation Mechanism

The theoretical framework is constructed based on the following core assumptions:

• Formation of Cooper-like electron pairs in localized electronic states without strict requirement for antiparallel momentum
• Bulk material dimensions far exceed the coherence length of wave functions at low temperatures
• Phonon-mediated attractive interactions enable Cooper pair formation

Key Physical Quantity Calculations

Phonon-Mediated Attractive Potential:

Ue−ph = −∫d³rd³r′ge−phδ(r−r′)ψ²(r)ψ²(r′)

Coulomb Repulsive Energy:

UC = ∫d³rd³r′ e²/(ε₁|r−r′|) ψ²(r)ψ²(r′) = (I₄₋d₂/I₃₋d₂) × e²/(ε₁ξloc)

Attraction-Repulsion Ratio:

|Ue−ph|/UC ≈ 2λ₀ > 1

This indicates that phonon-mediated electron pair formation is energetically favorable.

Spin Current Model

Bogoliubov-de Gennes Hamiltonian

Considering Zeeman energy level splitting effects, a 4×4 matrix form is constructed:

H(k) = [
  ξk + ηE    0        0      Δ
  0          ξk - ηE  -Δ     0
  0          -Δ       -ξ₋k - ηE  0
  Δ          0        0      -ξ₋k + ηE
]

Where:

• ξk = ℏ²k²/(2m) - μ (μ is the chemical potential)
• Beff = ηE = η₀e^(-T/Tc)E (effective Zeeman field)
• Δ is the binding energy of electrons at the same lattice site

Spin Current Density Expression

js = -e²τn√(2mE)/(4π²ℏ³kBT) ∫₍₋μ₎^ξc dξ [ξ/√(ξ²+Δ²)] × (ξ+μ)^(3/2) × 
     {cosh⁻²[(√(ξ²+Δ²) + ηE)/(2kBT)] - cosh⁻²[(√(ξ²+Δ²) - ηE)/(2kBT)]}

This expression predicts that spin current exhibits quadratic dependence on electric field in the low-field regime.

Space-Charge-Limited Charge Transport Theory

Basic Equation Set

Poisson Equation:

dF/dx = e/ε (ρ + nt(ρ) - ND)

Current Density Equation:

Jn = μn(enE + kT∇n) + eμtntDE

Trap State Density Model

Considering single-occupancy and double-occupancy effects:

nt = [g₁NtnNc exp(-E₁/kT) + 2g₂Ntn² exp(-E₂/kT)] / 
     [Nc² + g₁nNc exp(-E₁/kT) + g₂n² exp(-E₂/kT)]

Where:

• E₁ = (Et - Ec + δEFr + δEScr)/1 (effective trap energy level for single occupancy)
• E₂ = [2(Et - Ec) + U + δEFr + δEScr]/2 (effective trap energy level for double occupancy)

Experimental Setup

Model Parameters

The paper employs theoretical modeling methods with the following main parameter settings:

Spin Current Model Parameters:

• Relaxation time: 10 ps
• Chemical potential: 0.15 eV
• Cutoff energy: 0.05 eV
• Transition temperature: 60 K
• Chiral phonon coupling coefficient: 1×10⁻¹⁵ eV·m/V

Charge Transport Model Parameters:

• Relative dielectric constant: 11.7
• On-site potential: 0.03 eV
• Effective electron mass: 0.26 me
• Dopant energy level: -0.04 eV
• Trap density: 1×10²⁶ m⁻³
• Doping concentration: 8×10²⁵ m⁻³

Device Structure

• BIB device abstracted as a series structure of barrier layer, interface, and bulk absorption layer
• Consideration of approximately 200 nm absorption layer segment with doping concentration around 1×10²⁶ m⁻³
• Modeled as cubic structure for theoretical calculation convenience

Experimental Results

Spin Current Predictions

Figure 1 presents theoretical prediction curves of spin current density at the absorption layer/barrier layer interface. Results show:

• In the low electric field range, spin current indeed exhibits quadratic dependence on electric field
• Temperature has a significant influence on spin current, consistent with theoretical expectations near the superconducting transition temperature

Sheet Current Density Analysis

Figure 2 provides sheet current density distribution predictions based on space-charge-limited charge transport theory:

• The model can calculate the required voltage to achieve target sheet current density at different temperatures
• Demonstrates the complete transition process from low-bias nonlinearity to high-bias linearity

Doping Level Effects

Figure 3 shows theoretical predictions of dark current at different doping levels at 20 K:

• Doping level significantly affects dark current magnitude
• Provides guidance for dark current calculations in BIB devices under different doping conditions

Related Work

Superconductivity-Related Research

• Experimental evidence of superconductivity in silicon interface modification and doped bulk materials⁵'⁶
• Experimental realization of chiral superconductivity in silicon-based materials with Tc approaching 10 K
• Theoretical modeling of Cooper pair formation and phonon-assisted tunneling effects¹¹⁻¹⁹

Spin Current Theory

• Theoretical and experimental studies of chiral phonons⁷'⁸
• Chiral phonons generated by electron transport between localized states⁹
• Helical current and equivalent Zeeman field effects²²⁻²⁸

BIB Device Research

• Applications of BIB detectors in astronomical observations¹'²
• Photo-excitation mechanisms from impurity band to conduction band³'⁴
• Observation of negative differential resistance phenomena¹⁰

Conclusions and Discussion

Main Conclusions

1. Mechanism Clarification: First theoretical explanation of complex dark current behavior mechanisms in silicon-based BIB devices
2. Model Unification: Unifies interface chiral phonon effects and bulk material charge transport within a single theoretical framework
3. Quantitative Prediction: Provides theoretical tools for quantitatively predicting dark current
4. Design Guidance: Offers theoretical guidance for suppressing dark current in BIB detectors

Physical Picture

• Low Bias Regime: Chiral phonon-assisted spin current dominates, exhibiting parabolic I-V characteristics
• Intermediate Bias Regime: Trap filling-emptying mechanism dominates, with electrons first occupying trap states then thermally excited to the conduction band
• High Bias Regime: Transition to metallic state and eventual saturation

Limitations

1. Theoretical Assumptions: Assumptions based on Cooper pair formation require further experimental verification
2. Parameter Dependence: Certain model parameters require experimental calibration
3. Temperature Range: Primarily applicable to ultra-low temperature operating conditions
4. Material Specificity: Model parameters may require adjustment for different doping conditions

Future Directions

1. Experimental Verification: Design experiments to verify the existence of chiral phonon-assisted spin current
2. Parameter Optimization: Optimize model parameters through experimental data fitting
3. Device Design: Design low dark current BIB devices based on theoretical guidance
4. Extended Applications: Extend theory to other types of infrared detectors

In-Depth Evaluation

Strengths

1. High Innovation: First introduction of superconductivity theory into BIB device dark current analysis with novel perspective
2. Theoretical Completeness: Constructs a complete theoretical chain from microscopic mechanisms to macroscopic phenomena
3. Practical Value: Provides quantitative calculation tools with guidance for device design
4. Clear Physical Picture: Provides clear explanation of physical mechanisms in different voltage regimes

Weaknesses

1. Lack of Experimental Verification: Pure theoretical work lacking experimental data support
2. Strong Assumptions: Key assumptions such as Cooper pair formation require more rigorous theoretical or experimental proof
3. Parameter Source: Selection of certain model parameters lacks sufficient justification
4. Applicable Scope: Specific conditions and scope of theoretical applicability require further clarification

Impact

1. Academic Contribution: Provides new theoretical perspective for BIB device physics
2. Technical Application: Potential value for infrared detector design and optimization
3. Interdisciplinary: Promotes cross-disciplinary fusion between superconductivity physics and semiconductor device research

Application Scenarios

1. Astronomical Detection: Ultra-low temperature infrared astronomical detectors
2. Device Design: BIB structure optimization and dark current suppression
3. Theoretical Research: Charge transport mechanism research in low-dimensional systems

References

The paper cites 31 related references covering BIB device applications, superconductivity theory, spin current, chiral phonons, and other research fields, reflecting the interdisciplinary nature of the work and the breadth of its theoretical foundation.