High-Throughput Screening of Transition Metal-Based 2D Multilayer Kagome Materials via the "1 + 3" Design Strategy

Basic Information

• Paper ID: 2510.08903
• Title: High-Throughput Screening of Transition Metal-Based 2D Multilayer Kagome Materials via the "1 + 3" Design Strategy
• Authors: Xing-Yu Wang, En-Qi Bao, Su-Yang Shen, Jun-Hui Yuan, Jiafu Wang
• Classification: cond-mat.mtrl-sci (Condensed Matter Physics - Materials Science)
• Institutions: School of Physics and Mechanics, Wuhan University of Technology; School of Materials and Microelectronics
• Paper Link: https://arxiv.org/abs/2510.08903

Abstract

Two-dimensional (2D) kagome materials have attracted widespread research interest due to their unique electronic properties, including flat bands, magnetic frustration, and topological quantum states, which enable precise quantum state control and novel device innovation. However, simultaneously achieving high stability, tunability, and multifunctionality in 2D kagome systems remains a key challenge in materials design. This study innovatively proposes a new paradigm for constructing 2D multilayer kagome materials based on the "1+3" design concept. Through seamless integration of high-throughput screening techniques, 6,379 novel 2D multilayer kagome candidate materials were successfully identified from a vast candidate pool. These materials exhibit rich type diversity, including 173 metals, 27 semimetals, 166 ferrimagnetic semiconductors, and up to 6,013 semiconductors.

Research Background and Motivation

Core Issues

1. Scarcity of kagome materials: Although kagome lattices possess unique geometric frustration and electronic structure characteristics, materials with intrinsic kagome electronic properties are extremely rare in real materials, with only approximately 7% of known kagome network structure materials exhibiting relevant electronic characteristics.
2. Dimensional conflict: The inherent nature of 2D kagome lattices conflicts with traditional 3D bulk material research paradigms. Key electronic energy bands in three-dimensional systems are often obscured or shifted away from the Fermi level, making it difficult to observe and exploit novel physical properties.
3. Limitations of monolayer systems: Although monolayer kagome systems have demonstrated novel physical properties, experimental synthesis faces major challenges, and there are limitations in deep quantum state manipulation.

Research Significance

• The band structure of kagome lattices features Dirac cones, van Hove singularities, and localized flat bands
• Provides a theoretical platform for inducing quantum phenomena such as ferromagnetism and fractional quantum Hall effects
• Multilayer kagome systems possess superior tunability potential, with interlayer coupling capable of inducing multiple van Hove singularities

Limitations of Existing Methods

• Traditional methods for preparing intrinsic 2D kagome structures have poor scalability
• Lack of systematic multilayer kagome material databases and efficient universal theoretical design strategies
• Structure-property relationships remain unclear, and quantitative correlations between interlayer coupling strength and electronic state evolution have not been established

Core Contributions

1. Innovative design strategy: Proposes a new paradigm for designing 2D multilayer kagome materials based on the "1+3" concept, inducing spontaneous system reconstruction into kagome lattices through symmetry breaking within 2×2 supercells
2. Large-scale materials discovery: Identifies 6,379 stable 2D multilayer kagome materials from 20,160 candidate materials through high-throughput screening
3. Rich material types: Discovered materials encompass 173 metals, 27 semimetals, 166 ferrimagnetic semiconductors, and 6,013 semiconductors
4. Flat band characteristics analysis: Based on 2D flat band scoring criteria, approximately two-thirds of systems satisfy flat band conditions, with 4,189 semiconductor materials exhibiting flat band features
5. Systematic classification framework: Establishes a comprehensive classification system for "6+12" and "6+11" configurations and their derivative arrangements

Detailed Methodology

"1+3" Design Strategy

Basic Concept

Using Bi₂Se₃ crystal structure as an example, the design concept includes:

1. Extending 2D Bi₂Se₃ monolayer to a 2×2×1 supercell, forming Bi₈Se₁₂ structure
2. Generalizing to M₈X₁₂ configuration, containing two M atom layers with each layer arranged as a close-packed hexagonal network
3. Simultaneously removing M atoms at coordinates (2/3, 1/3, up) and (1/3, 2/3, down) in the upper and lower M atom layers according to the "1+3" strategy
4. Retaining three-quarters of M atoms to obtain M₆X₁₂ crystal configuration ("6+12" configuration)

Configuration Derivation

• M₆X₁₂ systems: Contain two kagome lattices formed by M atoms
• M₆X₁₁ systems: Form three kagome layers through removal of central layer edge X atoms
• Multielemental configurations: Based on elemental differences at four non-equivalent X sites (X1, X2, X3, X4), multiple configurations can be derived

Computational Methods

First-Principles Calculations

• Density functional theory (DFT) calculations using VASP software
• Structure optimization and formation energy calculations
• Phonon spectra, ab initio molecular dynamics (AIMD, 300K), and elastic constants calculations
• HSE06 hybrid functional for band structure calculations

Stability Screening Criteria

1. Thermodynamic stability: Formation energy less than zero
2. Dynamic stability: Phonon spectra without imaginary frequencies
3. Thermal stability: AIMD simulations at 300K
4. Mechanical stability: Elastic constants satisfying Born criteria

Element Selection Range

• Transition metals M: 8 elements (Sc, Y, Ti, Zr, Hf, V, Nb, Ta)
• Nonmetals X: 10 elements (C, Si, N, P, S, Se, Te, Cl, Br, I)
• Total candidates: 20,160 materials

Experimental Setup

High-Throughput Screening Workflow

1. Database generation: Candidate materials database generated based on elemental combinations
2. Stability screening: Formation energy, phonon spectra, AIMD, and elastic constants calculations
3. Electronic structure calculations: Band structure calculations using HSE06 functional
4. Materials classification: Classification into metals, semimetals, ferrimagnetic semiconductors, and semiconductors based on band structure
5. Flat band feature extraction: Analysis of flat band characteristics based on 2D flat band scoring criteria

Computational Parameters

• Plane wave cutoff energy: Set according to VASP recommendations
• k-point mesh: Density ensuring convergence
• Exchange-correlation functional: PBE for structure optimization, HSE06 for electronic properties
• Flat band scoring parameters: ΔE = 0.5 eV, ω = 25 meV

Experimental Results

Main Screening Results

Overall Statistics

From 20,160 candidate materials, 6,379 stable systems were identified:

• Metals: 173 (2.7%)
• Semimetals: 27 (0.4%)
• Ferrimagnetic semiconductors: 166 (2.6%)
• Semiconductors: 6,013 (94.3%)

"6+12" System Results

• Binary compounds: 15 stable 2D M₆X₁₂ compounds
  • Ti₆Te₁₂: Metallic properties
  • Remaining 14: Semiconductor characteristics with band gaps ranging from 0.03-1.54 eV
• "6+6+6" derivative systems: 76 stable compounds
  • V₆P₆I₆: Metallic properties
  • Ta₆S₆Cl₆ and Ta₆Te₆I₆: Semimetallic properties
  • Remaining 73: Semiconductor characteristics

"6+11" System Results

• Binary compounds: Only Sc₆Cl₁₁ exhibits stable structure, showing metallic properties
• "6+2+3+6" systems: 218 stable compounds
  • 44 metals
  • 5 semimetals
  • 169 semiconductors
• "6+5+6" subcategory: 69 stable compounds
  • 25 metals
  • 44 semiconductors

Electronic Properties Analysis

Representative Band Structures

1. Ti₆Te₁₂: Metallic properties
2. Hf₆Cl₁₂: Γ-K direct band gap with multiple Dirac points at K point
3. Sc₆Cl₁₁: Transition from direct band gap semiconductor to metal with near-perfect flat band near 0.6 eV
4. Y₆S₆Cl₆: Near-perfect flat band characteristics at valence band top with intact kagome band characteristics in conduction band
5. Ti₆Se₂Te₃I₆: Semimetallic with Dirac cones at K point

Flat Band Characteristics Statistics

• Among 6,013 semiconductors, 4,189 (69.6%) satisfy 2D flat band scoring criteria
• Scoring parameters: ΔE = 0.5 eV, ω = 25 meV
• Some systems achieve perfect flat band scores of 1

Magnetic Properties

• When VA, VIA, VIIA group elements at X1 sites are replaced by IVA group elements, systems typically exhibit magnetic properties
• For example, Hf₆C₂S₃Cl₆ is a ferrimagnetic semiconductor with both spin-up and spin-down states exhibiting semiconductor characteristics

Related Work

Current Status of Kagome Materials Research

1. Experimental synthesis: Experimental synthesis of monolayer kagome systems faces major challenges with few successful cases
2. Theoretical predictions: Primarily focused on monolayer kagome systems, with research on 2D bilayer or multilayer kagome materials still in early stages
3. Type-II systems: Type-II bilayer kagome systems possess special scientific value due to unique symmetry combinations

Development of Design Strategies

• Traditional methods: Preparing monolayer counterparts of bulk kagome materials with poor scalability
• "1+3" strategy: Utilizing 2D material triangular lattice building blocks to construct kagome lattices through symmetry breaking
• Verified systems: Validated in multiple systems and extended to metal oxide monolayers

Conclusions and Discussion

Main Conclusions

1. Successful establishment of design paradigm: The "1+3" strategy-based 2D multilayer kagome materials design method demonstrates high universality
2. Discovery of numerous stable materials: 6,379 stable materials provide a rich materials library for quantum device research
3. Excellent flat band characteristics: Approximately 70% of semiconductor materials exhibit flat band features, providing an ideal platform for flat band physics research
4. Diverse electronic properties: Encompassing metals, semimetals, semiconductors, and ferrimagnetic semiconductors, meeting diverse application requirements

Limitations

1. Verification scope: Due to the vast screening range, only partial results are presented in the paper
2. Experimental verification: Theoretical predictions require experimental verification to confirm actual material synthesizability
3. Application exploration: Specific device applications and performance optimization require further investigation

Future Directions

1. Experimental synthesis: Experimental preparation and characterization of representative materials
2. Performance optimization: Tuning material properties through external conditions such as strain and electric fields
3. Device applications: Exploring potential applications in quantum devices, spintronics, and other fields
4. Theoretical deepening: Establishing quantitative relationships between interlayer coupling strength and electronic state evolution

In-Depth Evaluation

Strengths

1. Strong innovation: The proposed "1+3" design strategy demonstrates high originality and universality
2. Good systematicity: Establishes a comprehensive materials classification and screening system
3. Large scale: High-throughput screening encompasses over 20,000 candidate materials
4. Rich results: 6,379 discovered stable materials with diverse types provide abundant choices for subsequent research
5. Rigorous methodology: Employs multiple stability criteria ensuring reliability of predicted materials

Limitations

1. Lack of experimental verification: As purely theoretical work, lacks experimental support
2. Insufficient mechanistic analysis: Physical mechanisms underlying flat band formation and interlayer coupling effects require deeper investigation
3. Unclear application orientation: Lacks performance optimization and design guidance for specific applications
4. Data completeness: Paper indicates some screening results remain under verification, with data completeness requiring improvement

Impact

1. Academic value: Provides new theoretical framework and abundant candidate materials for 2D kagome materials research
2. Practical prospects: Predicted materials have potential applications in quantum computing, spintronics, and other fields
3. Method generalization: Design strategy can be extended to design of other 2D material systems
4. Database value: Established materials database provides important reference for subsequent research

Applicable Scenarios

1. Theoretical research: Provides materials platform for fundamental research in kagome physics and flat band physics
2. Device design: Provides candidate materials for quantum device and topological device design
3. High-throughput computing: Provides methodological reference for materials informatics and high-throughput materials design
4. Experimental guidance: Provides target materials and theoretical expectations for experimental synthesis

References

The paper cites 27 important references covering theoretical foundations, experimental progress, and computational methods of kagome materials, reflecting comprehensive understanding and deep consideration of the research status in this field.

Through innovative "1+3" design strategy and large-scale high-throughput screening, this paper opens new pathways for theoretical design and experimental exploration of 2D multilayer kagome materials, possessing significant academic value and application prospects.