Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz

Basic Information

• Paper ID: 2510.08933
• Title: Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
• Authors: Ruixin Bai, Swarnav Mukhopadhyay, Michael Elliott, Ryan Gilbert, Jiahao Chen, Rafael A. Choudhury, Kyudong Kim, Yu-Chun Wang, Ahmad E. Islam, Andrew J. Green, Shubhra S. Pasayat, Chirag Gupta
• Institutions: University of Wisconsin-Madison, KBR, Air Force Research Laboratory
• Classification: physics.app-ph
• Paper Link: https://arxiv.org/abs/2510.08933

Abstract

This work demonstrates passivation-free Ga-polar recessed-gate AlGaN/GaN HEMTs on sapphire substrates designed for W-band applications. The devices feature a 5.5 nm Al₀.₃₅Ga₀.₆₅N barrier beneath the gate and a 31 nm Al₀.₃₅Ga₀.₆₅N barrier in the gate access region. The devices achieve a drain current density of 1.8 A/mm, peak transconductance of 750 mS/mm, and a high on/off ratio of 10⁷. Small-signal characterization reveals a current gain cutoff frequency of 127 GHz and a maximum oscillation frequency of 203 GHz. In 94 GHz continuous-wave load-pull measurements, the devices demonstrate an output power density of 2.8 W/mm and power-added efficiency (PAE) of 26.8%, both representing the highest reported values for Ga-polar GaN HEMTs on sapphire substrates and comparable to advanced Ga-polar GaN HEMTs on SiC substrates.

Research Background and Motivation

Problem Definition

The W-band (75-110 GHz) is critical for high-resolution radar, satellite communications, and emerging wireless systems. Conventional GaN HEMT devices face challenges in simultaneously achieving high-frequency operation and effective dispersion control, with primary issues including:

1. Parasitic Capacitance from Thick Passivation Layers: Thick passivation layers in conventional GaN HEMTs introduce high parasitic capacitance, hindering simultaneous achievement of high operating frequency and effective dispersion control
2. Substrate Cost Issues: High cost of SiC substrates limits large-scale applications
3. Complexity of N-Polar Devices: Although N-polar GaN HEMTs demonstrate superior performance, their growth and fabrication processes are more complex than conventional Ga-polar devices

Research Motivation

1. Cost Reduction: Replacing expensive SiC substrates with low-cost sapphire substrates
2. Process Simplification: Ga-polar structures offer simpler epitaxial design and fabrication processes compared to N-polar alternatives
3. Performance Breakthrough: Achieving W-band performance on sapphire substrates comparable to SiC-based devices

Core Contributions

1. First Demonstration of passivation-free Ga-polar recessed-gate AlGaN/GaN HEMTs on sapphire substrates with excellent W-band performance
2. Innovative Epitaxial Structure Design: Employing a 31 nm thick Al₀.₃₅Ga₀.₆₅N barrier layer to achieve deep recessed-gate structures without increasing sheet resistance
3. Record Performance Metrics: Achieving 2.8 W/mm output power density and 26.8% PAE at 94 GHz, representing the highest values for Ga-polar GaN HEMTs on sapphire substrates
4. Passivation-Free Design: Implementing effective dispersion control through deep recessed structures, avoiding parasitic capacitance from additional dielectric layers

Methodology Details

Device Structure Design

Epitaxial Layer Structure

• Substrate: Fe-doped semi-insulating GaN buffer layer on sapphire
• Channel Layer: 1 μm unintentionally doped (UID) GaN
• Interlayer: 0.7 nm AlN
• Barrier Layer: 31 nm Al₀.₃₅Ga₀.₆₅N

Device Geometric Parameters

• Source-drain spacing (Lsd): 0.5 μm
• Source-gate spacing (Lsg): 100 nm
• Gate length (Lg): 90 nm
• Barrier thickness after recess: ~5.5 nm

Fabrication Process Flow

1. n+ Ohmic Region Regrowth: Formation of low-resistance ohmic contacts
2. Mesa Isolation: BCl₃/Cl₂ reactive ion etching (RIE)
3. Hard Mask Deposition: 200 nm SiO₂ as hard mask
4. Gate Definition: Electron-beam lithography (EBL) for gate patterning
5. Barrier Recess: Low-power BCl₃/Cl₂ RIE etching to 5.5 nm thickness
6. Gate Dielectric: 4 nm HfO₂ atomic layer deposition (ALD) at 250°C
7. Gate Metal: 50 nm TiN deposited by ALD at 275°C
8. T-Shaped Gate Head: Cr/Au electron-beam evaporation
9. Hard Mask Removal: Buffered oxide etch (BOE)
10. Ohmic Contacts: Ti/Au electron-beam evaporation

Technical Innovations

Deep Recessed Structure Design

By etching the original 31 nm barrier layer to 5.5 nm, the following is achieved:

• Improved aspect ratio between gate length and gate-channel distance
• Enhanced gate control capability
• Creation of threshold voltage difference between gate region and gate access region, compensating for virtual gate effects

Passivation-Free Design Advantages

• Elimination of parasitic capacitance from additional dielectric layers
• Achievement of higher cutoff frequency at given gate length
• Simplified fabrication process

Experimental Setup

Test Conditions

• DC Characterization: Standard I-V measurements
• Pulsed I-V Testing: 50 μs pulse width, 1% duty cycle, static bias Vgsq = -3V, Vdsq = 5V
• S-Parameter Testing: 100 MHz to 43.5 GHz with SOLT calibration
• Load-Pull Testing: 94 GHz continuous-wave with TRL calibration

Evaluation Metrics

• Drain current density (ID)
• Peak transconductance (gm)
• On/off ratio (Ion/Ioff)
• Current gain cutoff frequency (ft)
• Maximum oscillation frequency (fmax)
• Output power density (POUT)
• Power-added efficiency (PAE)

Experimental Results

DC Characteristics

• Maximum Drain Current Density: ~1.8 A/mm
• On-Resistance: 0.41 Ω·mm
• Contact Resistance: ~0.1 Ω·mm (achieved through regrown ohmic contacts)
• Peak Transconductance: 0.75 S/mm
• On/off Ratio: ~10⁷

Sheet Resistance Analysis

Sheet resistance in the recessed region increases from ~250 Ω/□ to ~320 Ω/□, a moderate increase within acceptable range.

Dispersion Control Performance

Pulsed I-V measurements reveal:

• Only minor knee voltage shift observed
• No significant current collapse
• Slight current degradation at low drain bias (~15%), decreasing with increasing Vds

High-Frequency Characteristics

At Vgs = -3V, Vds = 6V:

• Current Gain Cutoff Frequency (ft): 127 GHz
• Maximum Oscillation Frequency (fmax): 203 GHz

W-Band Power Performance

94 GHz continuous-wave load-pull measurement results:

Performance Comparison Analysis

Comparison with reported GaN HEMT devices in the 83-95 GHz range:

• Surpasses Earlier N-Polar Sapphire Devices
• Comparable to Some SiC-Based Ga-Polar Devices
• Represents Highest Performance for Ga-Polar GaN HEMTs on Sapphire

Related Work

N-Polar GaN HEMT Development

• SiC substrates: 8.84 W/mm output power, 27% PAE
• Sapphire substrates: 5.8 W/mm output power, 38% PAE
• However, higher fabrication complexity and strong oxygen affinity

Current State of Ga-Polar GaN HEMTs

• Excellent performance on SiC substrates:
  • Pre-matched graded-channel HEMT: 2.94 W/mm, 37% PAE
  • ScAlN barrier HEMT: 3.57 W/mm, 24.3% PAE
• Lack of comparable results on sapphire substrates

Recessed-Gate Structure Challenges

GaN cap layers in conventional Ga-polar devices increase sheet resistance, affecting RF performance. This work addresses this issue through thick barrier layer design.

Conclusions and Discussion

Main Conclusions

1. Successfully demonstrated passivation-free Ga-polar recessed-gate AlGaN/GaN HEMTs on sapphire substrates
2. Achieved record performance of 2.8 W/mm output power density and 26.8% PAE at 94 GHz
3. Demonstrated effective dispersion control of deep recessed structures under passivation-free conditions

Limitations

1. Performance Gap with Latest N-Polar Devices: Latest N-polar sapphire-based devices still demonstrate superior performance
2. Self-Heating Effects: Limited thermal conductivity of sapphire substrates requires controlling static drain current to mitigate self-heating
3. Short-Channel Effects: Devices exhibit some short-channel effects affecting performance

Future Directions

1. Fabrication Process Optimization: Further optimize fabrication processes to narrow the performance gap with SiC-based devices
2. Thermal Management Improvement: Develop better thermal management techniques to fully exploit device potential
3. Structure Optimization: Continue optimizing epitaxial structures and device geometric parameters

In-Depth Evaluation

Strengths

1. Strong Technical Innovation: First demonstration of such high W-band performance for Ga-polar GaN HEMTs on sapphire substrates
2. High Practical Value: Low-cost substrates combined with simplified processes offer strong industrialization prospects
3. Comprehensive Experimental Design: Complete characterization from DC to high-frequency and small-signal to large-signal measurements
4. Thorough Comparative Analysis: Detailed comparison with existing technologies

Weaknesses

1. Limited Theoretical Analysis Depth: Theoretical analysis of dispersion control mechanisms in deep recessed structures could be more rigorous
2. Absence of Long-Term Reliability Data: Lacks device long-term reliability and stability data
3. Insufficient Process Detail: Certain critical fabrication process parameters lack detailed description

Impact

1. Academic Contribution: Opens new pathways for low-cost, high-performance millimeter-wave devices
2. Industrial Value: Provides more cost-effective solutions for commercial millimeter-wave applications
3. Technical Inspiration: Demonstrates that rational design can achieve high performance on low-cost substrates

Applicable Scenarios

1. Commercial Millimeter-Wave Communication Systems: Cost-sensitive large-scale applications
2. Radar Systems: Applications requiring high power density
3. Satellite Communications: W-band power amplifier applications

References

The paper cites 29 relevant references, primarily covering:

• GaN HEMT fundamentals 1
• N-polar GaN technology development 2-8
• W-band power devices 9-29
• Device physics and fabrication process research

Overall Assessment: This is a high-quality applied physics research paper with significant contributions in both technical innovation and practical value. Through clever structural design and process optimization, it achieves performance on low-cost substrates comparable to high-cost alternatives, providing important reference for industrialization of millimeter-wave devices.