Room-temperature magnetic semiconductor with superhigh hole mobility and ferrotoroidicity

Basic Information

• Paper ID: 2510.09327
• Title: Room-temperature magnetic semiconductor with superhigh hole mobility and ferrotoroidicity
• Authors: Jianyuan Qi, Shijie Xiong, Beining Ma, Xinghai Shen (Peking University)
• Classification: cond-mat.mtrl-sci cond-mat.other physics.chem-ph
• Affiliated Institution: School of Chemistry and Molecular Engineering, Applied Physics and Technology Research Center, Peking University
• Paper Link: https://arxiv.org/abs/2510.09327

Abstract

The design and fabrication of room-temperature magnetic semiconductors is widely recognized as a major challenge with significant theoretical and practical value in the field of spintronics. Compared to dilute magnetic semiconductors (DMS), the development of intrinsic room-temperature magnetic semiconductors remains extremely rare. This paper reports a magnetic semiconductor thin film based on uranyl and cyclodextrin supramolecular self-assembly with a Curie temperature exceeding room temperature. Electrical measurements demonstrate that the thin film exhibits typical p-type semiconductor characteristics with a carrier mobility as high as (3.2±0.2)×10³ cm²V⁻¹s⁻¹, achieving excellent matching with n-type semiconductors. The superhigh hole mobility of the room-temperature magnetic semiconductor can be attributed to the formation of ferrotoroidicity and highly ordered transport channels. This work paves the way for applications of ferrotoroidal materials in sensing, information storage, and flexible electronic devices.

Research Background and Motivation

Core Issues

1. Challenges in fabricating room-temperature magnetic semiconductors: The design and fabrication of room-temperature magnetic semiconductors is one of the 125 most challenging scientific questions published by Science magazine in 2005. Traditional dilute magnetic semiconductors (DMS) must satisfy multiple stringent conditions: Curie temperature exceeding room temperature, gate-tunable magnetism, absence of dopant segregation, and establishment of long-range magnetic order.
2. Carrier mobility limitations in p-type semiconductors: The carrier mobility of existing p-type semiconductors is far lower than n-type semiconductors, for example, SiC approximately 120 cm²V⁻¹s⁻¹, InSe approximately 800 cm²V⁻¹s⁻¹, and black phosphorus approximately 1350 cm²V⁻¹s⁻¹, severely limiting device applications.

Research Significance

• Spintronics applications: Magnetic semiconductors can simultaneously manipulate charge and spin degrees of freedom, offering broad application prospects in spintronic devices
• Device matching requirements: Matching high-mobility p-type semiconductors with n-type semiconductors is crucial for practical implementation
• Novel ferroic materials: Ferrotoroidicity, as the fourth fundamental ferroic order, has important application value in information storage and related fields

Core Contributions

1. First fabrication of room-temperature magnetic semiconductors via supramolecular self-assembly: Based on the uranyl-γ-cyclodextrin system, achieving intrinsic magnetic semiconductors with Curie temperature exceeding 300K
2. Realization of superhigh hole mobility: Carrier mobility reaching (3.2±0.2)×10³ cm²V⁻¹s⁻¹, significantly surpassing existing p-type semiconductor materials
3. Discovery of ferrotoroidicity mechanism: Revealing that ferrotoroidicity simultaneously breaking time-reversal and spatial-inversion symmetry is the key to achieving superior performance
4. Establishment of five-step coupling model: Proposing a magnetic moment coupling mechanism from microscopic to macroscopic scales, explaining the origin of room-temperature magnetism and superhigh mobility

Methodology Details

Material Fabrication Strategy

U2 Thin Film Preparation

• Precursor solution: UO₂(NO₃)₂·6H₂O (0.5 mmol) + γ-CD (1 mmol) + CsOH solution (10 mmol)
• Self-assembly process: Spin-coating method, γ-CD coordinates with metal ions to form supramolecular self-assembled crystals
• Film thickness control: Thickness (0.8-1.4 μm) controlled by adjusting spin-coating speed (2000-8000 rpm) and precursor concentration

U1@U2 Magnetic Thin Film Preparation

Two reduction methods to reduce UO₂²⁺ to UO₂⁺:

1. Irradiation reduction: ⁶⁰Co source, total dose 600 kGy, dose rate 100 Gy/min
2. Photoreduction: LED lamp irradiation for 12 hours, power 100 mW

Structural Characteristics

• Crystal structure: Sandwich-type coordination structure (γ-CD)₈(UO₂)₈Cs₁₆
• Morphological features: Polycrystalline thin films formed by stacking numerous small tetragonal crystals
• Reduction efficiency: XPS analysis shows 69.2% of hexavalent uranium reduced to pentavalent uranium

Experimental Setup

Characterization Methods

1. Structural characterization: PXRD, SEM, TEM, EDS
2. Magnetic characterization: SQUID magnetometer (MPMS-3), EPR, AC/DC magnetic susceptibility measurements
3. Electrical characterization: Hall device fabrication, field-effect transistor characteristic measurements
4. Symmetry analysis: Second harmonic generation (SHG) spectroscopy

Device Fabrication

• Hall device: Bottom-gate top-electrode structure, Au electrodes (50 nm thick)
• Insulating layer: SiO₂ layer thickness 4.73±0.03 nm
• Device dimensions: Hall bar length 100 μm, width 40 μm, aspect ratio 2.5

Computational Methods

• DFT calculations: CASSCF method for calculating spin-orbit coupling constants and superexchange coefficients
• Magnetic analysis: Analysis of magnetic coupling mechanisms based on Heisenberg model

Experimental Results

Magnetic Characteristics

1. Room-temperature ferromagnetism:
   • Curie temperature TC > 300K
   • ZFC-FC curves do not intersect in the 4-300K range
   • Coercivity Hc = 80 Oe at 300K
2. Magnetic order stability:
   • Real and imaginary parts of AC magnetic susceptibility show frequency-independent peaks
   • Magnetic properties remain stable after prolonged air exposure

Electrical Performance

1. p-type semiconductor characteristics:
   • Conduction at negative gate voltage, cutoff at positive gate voltage
   • Threshold voltage Vth ≈ -9.5V
   • Carrier mobility: (3.2±0.2)×10³ cm²V⁻¹s⁻¹
2. Anomalous Hall effect:
   • Anomalous Hall resistivity at zero magnetic field: 0.32 mΩ·cm
   • One to two orders of magnitude higher than existing magnetic materials

Symmetry Breaking

1. Spatial inversion symmetry breaking: SHG signal intensity shows quadratic relationship with power (slope 1.9≈2.0)
2. Time-reversal symmetry breaking: EPR signals (g=2.015, 2.006) confirm magnetism

Mechanism Analysis

Ferrotoroidicity Formation Mechanism

Five-Step Coupling Model

1. Step one: Spin-orbit coupling provides total angular momentum, achieving 3D spatial orientation through γ-CD tetrahedral coordination
2. Step two: Magnetic moment vortex arrangement and superexchange interaction form ferrotoroidal moment T⃗
3. Step three: Coupling along 1D tubular structure forms long-range ferrotoroidal moment ∑T⃗
4. Step four: Long-range ferrotoroidal moment further couples to form ferrotoroidal domains
5. Step five: Correlation between different ferrotoroidal domains forms macroscopic ferrotoroidal material

Key Parameters

• Spin-orbit coupling constant: ζ = 2164.5 cm⁻¹ (strong coupling)
• Superexchange coefficient: J = 7.8 cm⁻¹ (sufficient to maintain TC > 300K)
• Magnetic coupling model: Head-to-tail magnetic moment coupling pointing toward neighboring uranium atom connections

Superhigh Mobility Mechanism

1. Ordered transport channels: Supramolecular self-assembly constructs long-range ordered hole transport channels
2. Scattering suppression: Reduces interface and lattice scattering
3. Effective mass reduction: Strong spin-orbit coupling induces valence band splitting, promoting intermolecular hole transport

Comparison with Related Work

Development of Magnetic Semiconductors

1. Dilute magnetic semiconductors (DMS): Introduce magnetism through magnetic doping, but difficult to simultaneously satisfy all practical requirements
2. Two-dimensional magnetic semiconductors: Such as edge magnetism in phosphorene nanoribbons, but applications are limited
3. Organic magnetic semiconductors: Such as perylene diimide radicals, but radical lifetime is short

p-type Semiconductor Mobility Comparison

• This work: 3200 cm²V⁻¹s⁻¹
• Black phosphorus: 1350 cm²V⁻¹s⁻¹
• InSe: 800 cm²V⁻¹s⁻¹
• SiC: 120 cm²V⁻¹s⁻¹
• Tin-based perovskite: 60 cm²V⁻¹s⁻¹

Conclusions and Discussion

Main Conclusions

1. Successfully fabricated the first room-temperature magnetic semiconductor based on supramolecular self-assembly
2. Achieved the highest carrier mobility for p-type semiconductors to date
3. Discovered and verified the existence of ferrotoroidicity as the fourth ferroic order
4. Established a complete magnetic coupling theoretical model from microscopic to macroscopic scales

Technical Advantages

1. Simple fabrication: One-step spin-coating method, easily scalable for large-area fabrication
2. Superior performance: Simultaneously possesses room-temperature magnetism and superhigh mobility
3. Good stability: Long-term stability in air
4. Clear mechanism: Complete theoretical model with clear physical picture

Limitations

1. Material safety: Involves radioactive uranium elements, requiring special protective measures
2. Reduction methods: Requires irradiation or photochemical treatment, increasing fabrication complexity
3. Film quality: Polycrystalline structure may affect device consistency
4. Long-term stability: Further verification of device long-term operational stability is needed

Future Directions

1. Material optimization: Exploring non-radioactive element replacement options
2. Device integration: Developing spintronic devices based on this material
3. Application expansion: Applications in sensing, storage, flexible electronics, and other fields
4. Theoretical advancement: Further refinement of ferrotoroidicity theory

In-Depth Evaluation

Strengths

1. Outstanding innovation: First realization of supramolecular self-assembled room-temperature magnetic semiconductors, opening new research directions
2. Excellent performance: Carrier mobility sets new record for p-type semiconductors with important application value
3. In-depth mechanism: Discovery and verification of ferrotoroidicity mechanism has important theoretical significance
4. Comprehensive characterization: Complete structural, magnetic, electrical, and optical characterization with reliable data

Weaknesses

1. Safety considerations: Use of uranium elements limits widespread application of the material
2. Fabrication conditions: Requires inert atmosphere and irradiation equipment, raising fabrication barriers
3. Device optimization: Performance parameters of Hall devices require further optimization
4. Theoretical verification: Some theoretical calculations based on simplified models require more precise verification

Impact

1. Academic contribution: Provides new insights for research on magnetic semiconductors and ferrotoroidal materials
2. Technical value: Superhigh mobility p-type semiconductors have important significance for electronic device development
3. Application prospects: Has potential applications in frontier fields such as spintronics and quantum devices

Applicable Scenarios

1. Basic research: Investigation of physical mechanisms in magnetic semiconductors
2. Spintronic devices: Spin field-effect transistors, spin LEDs, etc.
3. Storage applications: Novel storage devices based on ferrotoroidicity
4. Sensing devices: High-sensitivity magnetic sensors

References

This paper cites 47 relevant references covering important works in multiple research fields including magnetic semiconductors, ferrotoroidal materials, and supramolecular self-assembly, providing a solid theoretical foundation and comparative basis for the research.

Overall Evaluation: This is a paper with significant breakthrough value in the field of materials science, achieving remarkable innovation not only in technology but also proposing new physical mechanisms in theory. Despite some challenges in practical implementation, its academic value and potential application prospects make it an important contribution to the field.