Optically induced orbital polarization in bulk germanium

Basic Information

• Paper ID: 2510.09525
• Title: Optically induced orbital polarization in bulk germanium
• Authors: F. Scali, M. Finazzi, F. Bottegoni, C. Zucchetti (Politecnico di Milano)
• Classification: cond-mat.mtrl-sci (Condensed Matter Physics - Materials Science)
• Publication Date: October 13, 2025
• Paper Link: https://arxiv.org/abs/2510.09525

Abstract

Optical orientation techniques have proven to be effective tools for injecting spin-polarized electrons and holes in III-V and IV group semiconductors. Specifically, absorption of circularly polarized light in bulk germanium produces spin-oriented electron populations in the conduction band with spin polarization rates up to 50%, while hole spin polarization rates (opposite to electrons) can reach as high as 83%. This paper presents a theoretical investigation of optically induced orbital angular momentum polarization through circularly polarized light in bulk germanium, revealing that hole orbital polarization rates significantly exceed 100% at photon energies near the germanium direct bandgap. These results indicate that germanium is an ideal platform for future development of orbitronics and photo-orbitronics devices.

Research Background and Motivation

Problem Background

1. Challenges in Spintronics: Although spin-transfer torque and spin-orbit torque MRAMs have achieved success in memory devices, spin manipulation remains a challenging problem. The extremely short spin lifetime of carriers hinders the realization of robust all-electrical spin switching architectures.
2. Rise of Orbitronics: Orbitronics, as an emerging research field, utilizes orbital angular momentum of electrons or holes as state variables, offering potential advantages over spintronics. The orbital Hall effect (OHE) can generate transverse orbital currents, providing new pathways for generation, detection, and manipulation of orbital currents.
3. Potential of Optical Orientation Techniques: Optical orientation techniques have successfully achieved spin-polarized carrier injection in III-V and IV group semiconductors, but their application in orbital angular momentum polarization remains insufficiently explored.

Research Motivation

This research aims to theoretically explore the possibility of generating orbital angular momentum accumulation in bulk germanium using optical orientation techniques, providing new physical foundations for orbitronics devices.

Core Contributions

1. First Theoretical Investigation: First systematic theoretical study of the physical mechanisms of circularly polarized light-induced orbital angular momentum polarization in bulk germanium
2. Establishment of Complete Theoretical Framework: Based on 30-band k·p method and linear response theory, a complete computational framework for carrier, spin, and orbital injection rates is established
3. Discovery of Ultra-High Orbital Polarization: Discovery that hole orbital polarization rates can reach approximately 160% (in units of ℏ/2) at photon energies near the germanium direct bandgap
4. Provision of Atomic Physics Picture: Explanation of orbital polarization mechanisms from the perspective of atomic orbitals
5. Indication of Application Prospects: Demonstration of germanium's enormous potential as an orbitronics device platform

Methodology Details

Theoretical Framework

This research employs a complete quantum mechanical framework based on k·p theory and linear response theory:

1. Band Structure Calculation

• Utilizes a k·p model containing 30 s-, p-, and d-(eg)-type states
• Band structure calculations covering the entire Brillouin zone
• Parameters derived from experimental data at room temperature

2. Carrier Injection Tensor

The general component of the carrier injection tensor is expressed as:

ξ^αβ(ω) = (2πe²/(ℏω)²) Σ_{c,v} ∫ dk/(8π³) v̂^α*_{cv}(k)v̂^β_{cv}(k)δ[ω_{cv}(k) - ω]

where α,β denote crystal cubic axis directions, c(v) denotes summation over conduction (valence) band states, and v̂^α_ is the velocity operator matrix element.

3. Spin Injection Pseudotensor

The spin injection pseudotensors for electrons and holes are respectively:

ζ^xyz_e(ω) = (ℏ/2)(πe²/(ℏω)²) Σ_{c,c̄,v} ∫ dk/(8π³) Ŝ^x_{cc̄}(k)v̂^y*_{cv}(k)v̂^z_{c̄v}(k) × [δ[ω_{cv}(k) - ω] + δ[ω_{c̄v}(k) - ω]]

4. Orbital Angular Momentum Injection Pseudotensor

The orbital injection pseudotensor η^xyz(ω) is obtained by replacing the spin operator Ŝ^x with the orbital angular momentum operator L̂^x.

Orbital Angular Momentum Operator

For p orbitals, the matrix form of the orbital angular momentum operator is:

L̂^x_(p) = ℏ [0  0   0 ]
              [0  0  -i ]
              [0  i   0 ]

with basis states |p_x⟩, |p_y⟩, |p_z⟩.

Polarization Degree Calculation

• Spin polarization degree: DSP_{e(h)} = Ṡ^x_{e(h)}/ṅ
• Orbital polarization degree: DOP_{e(h)} = L̇^x_{e(h)}/ṅ

Experimental Setup

Computational Parameters

• Temperature: Room temperature (thermal energy set to 26 meV)
• k-point Integration: Tetrahedral integration method employed to ensure energy conservation
• Degenerate State Treatment: Coherence considered for degenerate or quasi-degenerate state pairs with ℏω_{cc̄(vv̄)} < k_BT

Optical Conditions

• Light Source: Monochromatic circularly polarized light
• Photon Energy Range: ℏω ≥ ε_ (germanium direct bandgap)
• Polarization Type: Left and right circularly polarized light

Experimental Results

Carrier Injection Characteristics

1. Total Carrier Injection Rate: Increases with photon energy, reaching approximately 3.0×10^14 V^-2 s^-1 Å^-1 near 3.0 eV
2. Band Contributions: Relative contributions from heavy hole (HH), light hole (LH), and split-off (SO) bands vary with photon energy

Spin Polarization Results

1. Electron Spin Polarization:
   • Reaches approximately 50% near the direct bandgap
   • Gradually decreases with increasing photon energy
2. Hole Spin Polarization:
   • Reaches approximately -83% near the direct bandgap
   • Opposite in direction to electron spin polarization

Breakthrough Discovery in Orbital Polarization

1. Electron Orbital Polarization:
   • Remains below 1% across the entire photon energy range
   • Due to conduction band being primarily composed of s orbitals (l=0)
2. Hole Orbital Polarization:
   • Reaches approximately 160% near the direct bandgap
   • Maintains above 40% in the ℏω < 2.2 eV range
   • This is the most important finding of this research

Atomic Physics Explanation

Near the Γ point, the physical mechanism of orbital polarization can be understood through atomic orbital analysis:

1. HH State Contribution: ⟨3/2, 3/2|L_z|3/2, 3/2⟩ = ℏ
2. LH State Contribution: ⟨3/2, 1/2|L_z|3/2, 1/2⟩ = ℏ/3
3. Transition Strength Ratio: HH:LH = 3:1
4. Theoretical Expectation: DOP_h = (3ℏ + ℏ/3)/4 = 5ℏ/6 = 166% (in units of ℏ/2)

Related Work

Development of Orbitronics

1. Theoretical Foundation: Pioneering work by Bernevig et al. in 2005
2. Experimental Verification: Recent observations of orbital Hall effect in Ti, Cr, Ge, Si and other materials
3. Device Applications: Applications of orbital-spin conversion in magnetic devices

Optical Orientation Techniques

1. Historical Development: From Lampel's pioneering work in 1968 to modern applications
2. Material Extension: Application expansion from III-V semiconductors to IV group semiconductors
3. Spin Injection: Achievement of efficient spin-polarized carrier injection in germanium

Conclusions and Discussion

Main Conclusions

1. Orbital Polarization Advantage: Hole orbital polarization rates significantly exceed spin polarization rates, providing new opportunities for orbitronics applications
2. Material Advantage: Germanium possesses unique advantages as an orbitronics platform, particularly for valence band applications
3. Physical Mechanism: Generation of orbital angular momentum originates from intrinsic properties of p orbitals and optical selection rules

Limitations

1. Theoretical Calculation: Based on ideal crystal model, not accounting for defects and disorder in real materials
2. Temperature Effects: Only considers room temperature conditions; behavior at low temperatures may differ
3. Carrier Lifetime: Does not account for orbital angular momentum relaxation time

Future Directions

1. Experimental Verification: Experimental techniques needed to verify theoretically predicted high orbital polarization rates
2. Device Design: Development of practical orbitronics devices based on high orbital polarization
3. Material Optimization: Exploration of other semiconductor materials with similar characteristics

In-Depth Evaluation

Strengths

1. Theoretical Innovation: First systematic study of optical injection of orbital angular momentum, opening new research directions
2. Rigorous Methodology: Employs mature k·p theory and linear response theory with complete and reliable computational framework
3. Significant Results: Discovered ultra-high orbital polarization rates possess important scientific value and application prospects
4. Clear Physical Picture: Provides intuitive physical explanation from atomic orbital perspective

Weaknesses

1. Missing Experimental Verification: As a purely theoretical work, lacks experimental support
2. Unclear Application Pathway: Although application prospects are indicated, specific device implementation pathways are insufficiently clear
3. Material Limitation: Only germanium is studied, lacking comparative analysis of other materials

Impact

1. Academic Contribution: Provides important theoretical foundation for orbitronics field
2. Technical Value: Provides design basis for next-generation orbitronics devices
3. Leading Role: May trigger research surge in optical manipulation of orbital angular momentum

Applicable Scenarios

1. Basic Research: Fundamental physics research in orbitronics
2. Device Development: Design of photo-controlled orbitronics devices
3. Material Selection: Theoretical guidance for identifying high-efficiency orbital polarization materials

References

The paper cites important literature in orbitronics, optical orientation, and semiconductor physics, including:

• Pioneering work on orbital Hall effect by Bernevig et al.
• Recent experimental progress in orbitronics
• Classical literature on k·p theory and optical orientation
• Band structure research on germanium materials

Summary: This is a high-quality theoretical physics paper making important contributions to the emerging field of orbitronics. The discovered ultra-high orbital polarization phenomenon possesses significant scientific importance, providing a solid theoretical foundation for future development of orbitronics devices.