Ambient-Stable Transfer-Free Graphdiyne Wafers with Superhigh Hole Mobility at Room Temperature

Basic Information

• Paper ID: 2510.09998
• Title: Ambient-Stable Transfer-Free Graphdiyne Wafers with Superhigh Hole Mobility at Room Temperature
• Authors: Beining Ma, Jianyuan Qi, Xinghai Shen (Peking University)
• Classification: cond-mat.mtrl-sci physics.chem-ph
• Corresponding Author: Prof. X. H. Shen (xshen@pku.edu.cn)
• Paper Link: https://arxiv.org/abs/2510.09998

Abstract

Graphdiyne (GDY), owing to its intrinsic p-type semiconducting properties, is considered a promising candidate material for fabricating next-generation high-speed, low-power electronic devices. However, the application development of GDY in field-effect transistors (FETs), complementary metal-oxide-semiconductor (CMOS), and logic devices has been limited due to the relatively low carrier mobility reported in current experimental studies. This paper reports the direct synthesis of layer-controlled hydrogen-substituted graphdiyne (HsGDY) thin films on silicon substrates under supercritical CO₂ atmosphere, and the fabrication of HsGDY-based field-effect transistors from these films. The transfer-free growth strategy eliminates performance degradation caused by post-synthesis transfer processes. The resulting HsGDY FETs exhibit hole mobility as high as 3800 cm² V⁻¹ s⁻¹ at room temperature, which is approximately one order of magnitude higher than most p-type semiconductors.

Research Background and Motivation

1. Core Problem

In the post-Moore era, silicon-based semiconductor technology faces critical challenges at sub-10 nanometer nodes, including short-channel effects, reduced carrier mobility, and increased power consumption. Two-dimensional (2D) semiconductors, with their atomic-scale thickness, ultra-smooth surfaces, ultra-high carrier mobility, and excellent tunable electrical properties, are considered among the most promising candidates for continuing Moore's Law.

2. Problem Significance

• Carrier Mobility Mismatch: The carrier mobility of most p-type semiconductors typically ranges from 10⁻² to 10² cm² V⁻¹ s⁻¹, with only black phosphorus (BP) reporting room-temperature hole mobility exceeding 10³ cm² V⁻¹ s⁻¹
• PMOS and NMOS Performance Disparity: The carrier mobility mismatch between p-channel and n-channel metal-oxide-semiconductor devices significantly affects data processing speed, increases power consumption, and reduces performance
• Existing Method Limitations:
  • Transfer Process Issues: Traditional GDY thin films require transfer to silicon wafers, inevitably introducing impurity contamination and structural damage, reducing hole mobility
  • Photolithography Difficulties: GDY films transferred to silicon wafers are difficult to fabricate into FET arrays using photolithography techniques
  • Lack of Catalytic Activity: Silicon substrates lack catalytic activity for GDY monomer coupling

Core Contributions

1. Development of Transfer-Free HsGDY Wafer Synthesis Method: First realization of in-situ growth of 2D GDY thin films on silicon substrate surfaces
2. Achievement of Superhigh Hole Mobility: HsGDY FETs demonstrate room-temperature hole mobility as high as 3.8×10³ cm² V⁻¹ s⁻¹, approximately one order of magnitude higher than most p-type semiconductors
3. Resolution of Carrier Mobility Mismatch Problem: Provides a new strategy for addressing carrier mobility mismatch between p-channel and n-channel 2D metal-oxide-semiconductor devices
4. Standard Photolithography Process Compatibility: Transfer-free HsGDY wafers can be integrated into standard photolithography workflows

Methodology Details

Synthesis Mechanism

A spatially confined synthesis strategy is employed under supercritical CO₂ environment by sandwiching copper foil with silicon wafers:

1. Catalyst Source: Copper ions released from copper foil migrate and adsorb onto the silicon surface
2. Catalytic Reaction: Copper ions catalyze the coupling reaction of GDY monomers
3. Direct Epitaxial Growth: Direct epitaxial growth is achieved on the substrate

Technical Innovations

1. Spatially Confined Strategy

• Large-area uniform few-layer HsGDY films are achieved through a simple sandwiching method (silicon wafer and copper foil)
• Supercritical CO₂ environment provides ideal reaction conditions

2. Layer Number Control

By precisely adjusting the concentration of triethynylbenzene (TEB), HsGDY wafers with different layer numbers are successfully prepared:

• Thinnest film thickness approximately 2.2 nm, corresponding to 6-layer HsGDY wafers
• Thickness range: 2.2-22 nm

3. Transfer-Free Growth Advantages

• Eliminates PMMA residual contamination
• Avoids structural damage
• Enhances carrier mobility
• Compatible with standard photolithography processes

Experimental Setup

Synthesis Conditions

• Reaction Temperature: 50°C
• Pressure: 100 bar (supercritical CO₂)
• Reaction Time: 24 hours
• Monomer Concentration: 0.20-0.32 mg mL⁻¹ (TEB in acetone)
• Solvent System: 70% TMEDA + 30% pyridine

Device Fabrication

1. Hall Bar Structure: Length 110 μm, width 20 μm
2. Electrode Material: Au/Ti (50 nm/5 nm)
3. Gate Dielectric: SiO₂ (thickness 4.8 nm, capacitance 719.4 nF cm⁻²)
4. Device Architecture: 8-electrode Hall bar configuration

Characterization Methods

• Raman Spectroscopy: Confirms characteristic peaks of HsGDY (1357, 1573, 1934, 2212 cm⁻¹)
• XPS: Analyzes chemical states
• SEM-EDS: Confirms film uniformity
• AFM: Measures thickness
• TEM: Analyzes crystal structure

Experimental Results

Main Results

1. Carrier Mobility Performance

• Average Hole Mobility of 6-layer HsGDY FET: 3.8×10³ cm² V⁻¹ s⁻¹
• Thickness Dependence: As film thickness decreases from 22 nm to 2.2 nm, hole mobility increases from 7.3×10² cm² V⁻¹ s⁻¹ to 3.8×10³ cm² V⁻¹ s⁻¹
• On/Off Ratio: Ion/Ioff = 1×10⁴

2. Electrical Performance

• Conductivity: 2.3×10³ S m⁻¹ (298 K)
• Contact Type: Ohmic contact
• Gate Control: Pronounced gate control characteristics
• p-type Characteristics: Sharp current surge observed at Vg ≈ -5 V

3. Stability

Device performance remains constant after 60 days in ambient air without any encapsulation, demonstrating excellent environmental stability.

Comparison with Other p-type Semiconductors

HsGDY hole mobility (3800 cm² V⁻¹ s⁻¹) significantly surpasses other p-type 2D materials:

• Black Phosphorus: 1350 cm² V⁻¹ s⁻¹
• Te: 700 cm² V⁻¹ s⁻¹
• WSe₂: 250 cm² V⁻¹ s⁻¹
• MoS₂: 68 cm² V⁻¹ s⁻¹

Mechanism Analysis

Electron paramagnetic resonance (EPR) measurements reveal the p-type semiconductor behavior mechanism:

• HsGDY exhibits a symmetric EPR signal with g-value of 2.002, characteristic of oxygen vacancies
• Oxygen atom removal disrupts local conjugation, producing carbon dangling bonds
• Dangling bonds act as strong electron acceptors, capturing electrons from the valence band and generating mobile holes

Related Work

Current Status of GDY Research

• GDY, as an emerging 2D carbon allotrope, features a planar structure with sp² and sp hybridized carbon atoms
• Theoretical predictions indicate GDY is an intrinsic p-type 2D semiconductor with superhigh hole mobility
• Existing experimental reports of GDY FETs show relatively low hole mobility (0.033-247.1 cm² V⁻¹ s⁻¹)

Synthesis Method Comparison

• Existing methods: copper foil, quartz, MXene substrates, etc.
• This work: First realization of in-situ growth on silicon wafer surfaces

Conclusions and Discussion

Main Conclusions

1. Successfully developed a method for in-situ growth of HsGDY on silicon substrates
2. Achieved the highest hole mobility among p-type 2D semiconductors to date
3. Resolved performance degradation issues caused by transfer processes
4. Provides a solution to the carrier mobility mismatch problem in CMOS technology

Application Prospects

• CMOS Technology: Can be matched with high carrier mobility n-type semiconductors for heterogeneous integrated CMOS
• Logic Devices: Improves switching speed of CMOS logic gates
• Low-Power Devices: Achieves required switching speed at lower operating voltages, significantly reducing energy consumption

Limitations

1. Currently only achieves 1×1 cm wafer size
2. Further optimization needed for larger-scale wafer growth
3. Long-term stability requires more detailed investigation

In-Depth Evaluation

Strengths

1. Strong Technical Innovation: First realization of in-situ GDY growth on silicon substrates, addressing key technical bottlenecks
2. Significant Performance Breakthrough: Hole mobility approximately one order of magnitude higher than existing p-type 2D semiconductors
3. High Practical Value: Compatible with standard semiconductor processes, with good industrialization prospects
4. Comprehensive Characterization: Multiple characterization techniques fully verify material structure and performance

Weaknesses

1. Wafer Size Limitation: Currently only achieves 1×1 cm size, with significant gap to industrial applications
2. Insufficient Mechanism Explanation: Microscopic mechanisms underlying superhigh mobility require more detailed theoretical analysis
3. Missing Temperature Characteristics: Lacks performance characterization at different temperatures

Impact

1. Academic Value: Provides important progress in 2D materials electronics
2. Industrial Significance: Offers new material options for next-generation semiconductor device development
3. Reproducibility: Relatively simple method with good reproducibility

Applicable Scenarios

• High-performance CMOS devices
• Low-power logic circuits
• High-frequency electronic devices
• Flexible electronic devices

References

The paper cites 49 related references, covering important research work in 2D materials, graphdiyne synthesis, field-effect transistors, and related fields, providing solid theoretical foundation and technical support for this research.