Weak-anti-localization-to-spin-dependent scattering at a proximity-magnetized heavy metal interface

Basic Information

• Paper ID: 2510.10595
• Title: Weak-anti-localization-to-spin-dependent scattering at a proximity-magnetized heavy metal interface
• Authors: Hisakazu Matsuki, Guang Yang, Jiahui Xu, Vitaly N. Golovach, Yu He, Jiaxu Li, Alberto Hijano, Niladri Banerjee, Iuliia Alekhina, Nadia Stelmashenko, F. Sebastian Bergeret, Jason W. A. Robinson
• Classification: cond-mat.mtrl-sci cond-mat.mes-hall
• Publication Date: October 12, 2025 (arXiv preprint)
• Paper Link: https://arxiv.org/abs/2510.10595

Abstract

The variation of material resistance with magnetic field (magnetoresistance) originates from quantum interference effects and/or spin-dependent transport, depending on material properties and dimensionality. In disordered conductors, electron interference leads to weak localization or anti-localization; ferromagnetic conductors support spin-dependent scattering, producing giant magnetoresistance (GMR). By varying the Au thickness (4-28 nm) in an EuS/Au/EuS spin valve, researchers observed a crossover transition from weak anti-localization to interface GMR. This transition is associated with the magnetic proximity effect in Au, originating from electron scattering at the insulating EuS interface. The proximity-induced exchange field suppresses weak anti-localization in Au, consistent with Maekawa-Fukuyama theory. As Au thickness increases, GMR appears alongside spin Hall magnetoresistance. These findings demonstrate spin transport controlled by interface exchange fields, establishing a framework for spintronic functionality without metallic ferromagnets.

Research Background and Motivation

Research Problem

The core problem addressed by this research is understanding the mechanism of electronic spin transport at magnetic insulator/non-magnetic metal (MI/N) interfaces, particularly the transition from quantum interference effects to spin-dependent scattering under different thickness conditions.

Significance

1. Spintronic Device Development: MI/N interfaces are central to the development of spintronics and magnon device technologies
2. Fundamental Physics Understanding: The competitive mechanism between quantum interference effects and spin-dependent transport remains incompletely understood
3. Device Applications: Provides new pathways for spintronic functionality without requiring metallic ferromagnets

Limitations of Existing Approaches

1. GMR Research Limitations: Traditional GMR has been primarily observed at metal ferromagnet/non-magnetic metal interfaces; reports of GMR in MI/N systems are rare
2. Insufficient Theoretical Verification: Experimental verification of the magnetoresistance in the weak localization regime induced by magnetic exchange fields, as predicted by Maekawa-Fukuyama theory, is lacking
3. Incomplete Understanding of Interface Effects: The understanding of how interface exchange fields regulate quantum transport remains insufficient

Research Motivation

By systematically investigating the effect of Au thickness on magnetic transport properties in EuS/Au/EuS structures, this work aims to reveal the mechanism by which interface exchange fields regulate quantum interference effects and spin-dependent scattering.

Core Contributions

1. First observation of GMR effect in MI/N/MI structures, filling an experimental gap in the field
2. Experimental verification of Maekawa-Fukuyama theory, demonstrating that interface exchange fields can suppress weak anti-localization
3. Discovery of thickness-dependent magnetoresistance sign reversal, revealing the transition mechanism from weak anti-localization to GMR
4. Observation of significant anomalous Hall effect, confirming the existence of strong exchange fields at the EuS/Au interface
5. Establishment of a theoretical framework for interface exchange field-controlled spin transport, providing guidance for designing spintronic devices without metallic ferromagnets

Methodology Details

Sample Preparation

The research employs a multilayer structure of Au(3 nm)/EuS(20 nm)/Au(d)/EuS(10 nm)/SiO₂//Si, where d represents variable Au thickness ranging from 4-28 nm. Samples were prepared by electron beam evaporation at room temperature with a base vacuum of 1×10⁻⁸ mbar.

Measurement Techniques

1. Magnetoresistance Measurement: Measuring resistance variation with magnetic field under in-plane and out-of-plane configurations
2. Magnetization Measurement: Using vibrating sample magnetometry to measure hysteresis loops
3. Hall Effect Measurement: Measuring transverse resistivity under perpendicular magnetic fields

Theoretical Analysis Framework

Weak Localization Theory

For thin Au layers (d ≤ 6 nm), the Maekawa-Fukuyama theory is used to describe magnetoresistance in in-plane magnetic fields:

Under conditions of isotropic spin-orbit coupling and elastic scattering time shorter than spin-orbit scattering time (τ₀ ≪ τₛₒ), MF theory predicts positive magnetoresistance from in-plane magnetic fields.

Interface Exchange Field

The imaginary part of spin mixing conductance Gᵢ produces a proximity magnetic exchange field (MEF):

$G_i \approx g\pi G_0 N_F \mu_B \mu_0 H_{ex} d$

where g is the Landé g-factor, G₀ is the quantum conductance, Nₓ is the density of states per spin at the Fermi level, and μв is the Bohr magneton.

Spin Hall Magnetoresistance

For FI/HM/FI structures, the anomalous Hall resistivity is:

$\Delta\rho_{yx} = -\theta_{SH}^2 \frac{d G_i}{G_i^2 + [G_r + \frac{\sigma_0}{2\lambda}\coth(\frac{d}{2\lambda})]^2}$

where θₛₕ is the spin Hall angle and λ is the spin diffusion length.

Experimental Setup

Sample Structure

• Spin Valve Structure: EuS(20 nm)/Au(d)/EuS(10 nm), d = 4, 6, 7, 8, 10, 12, 16, 20, 28 nm
• Control Sample: Au(7 nm)/SrTiO₃ single layer film
• Electrodes: AlSi pads fabricated as electrical contacts via ultrasonic bonding

Measurement Conditions

• Temperature Range: 2-300 K
• Magnetic Field Range: In-plane ±20 mT, out-of-plane ±5 T
• Measurement Frequency: Low-frequency AC measurements to avoid heating effects

Device Geometry

• Hall Bar: 100×400 μm² for Hall effect measurements
• Unpatterned Samples: Used for basic magnetoresistance and magnetization measurements

Experimental Results

Temperature-Dependent Resistance Behavior

1. Thin Au Layers (d ≤ 6 nm): Resistance minimum appears at 10-20 K; at low temperatures, resistance increases as -ln(T), exhibiting weak localization regime (WLR) behavior
2. Thick Au Layers (d ≥ 8 nm): Resistance decreases monotonically with temperature, not conforming to WLR characteristics
3. Normalized Resistance Increase: At 3 K, (R-Rₘᵢₙ)/Rₘᵢₙ increases linearly with Au thickness up to 8 nm

Thickness-Dependent Magnetoresistance

Positive Magnetoresistance in Thin Au Layers (d = 4, 6 nm)

• Resistance minimum appears in antiparallel (AP) magnetization state
• Magnetoresistance defined as MR = (Rₕ₌₀-Rₐₚ)/Rₐₚ×100%
• d = 4 nm: MR ≈ +0.01%
• d = 6 nm: MR ≈ +0.005%
• Consistent with Maekawa-Fukuyama theory predictions

Negative Magnetoresistance in Thick Au Layers (d ≥ 8 nm)

• Exhibits typical GMR behavior: Rₐₚ > Rₚ
• MR values decrease with increasing thickness
• d = 8 nm: MR ≈ -0.005%
• d = 28 nm: MR ≈ -0.002%

Anomalous Hall Effect

Significant anomalous Hall resistivity observed in perpendicular magnetic field measurements:

• d = 4 nm: ρᵧₓ ≈ 90 pΩ·m
• d = 8 nm: ρᵧₓ ≈ 42 pΩ·m
• d = 16 nm: ρᵧₓ ≈ 20 pΩ·m

These values are three orders of magnitude higher than Au/YIG bilayers, confirming the existence of strong exchange fields at the EuS/Au interface.

Magnetization Characteristics

• Coercive fields of EuS layers: ±7 mT and ±3 mT
• Extrapolated Curie temperature: approximately 20 K
• Magnetization saturates at ±1.5 T

Related Work

Development of Weak Localization Theory

• HLN Theory: Describes weak localization under out-of-plane magnetic fields
• MF Theory: Predicts positive magnetoresistance under in-plane magnetic fields, but experimental verification is rare
• Spin-Orbit Coupling Effects: Magnetoresistance anisotropy in materials with strong spin-orbit coupling

Current Status of GMR Research

• Metal F/N/F Structures: Primary implementation method for conventional GMR
• Dilute Magnetic Semiconductors: Few reports of GMR in MI/N systems
• Interface Engineering: Achieving novel magnetoresistance effects through interface control

EuS-Related Research

• Interface Exchange Fields: Exchange coupling at EuS interfaces with various materials
• Spin Injection: Applications of EuS as a spin injection source
• Proximity Effects: Magnetic proximity effects in superconductors and graphene

Conclusions and Discussion

Main Conclusions

1. Successfully observed thickness-controlled magnetoresistance sign reversal: from positive magnetoresistance in thin Au layers (weak anti-localization) to negative magnetoresistance in thick Au layers (GMR)
2. Verified the critical role of interface exchange fields: The strong exchange field at the EuS/Au interface suppresses quantum interference and induces spin-dependent scattering
3. Established the GMR mechanism in MI/N/MI structures: Interface exchange fields produce effective spin polarization, enabling GMR effects
4. Confirmed the existence of spin Hall magnetoresistance: Large imaginary spin mixing conductance produces significant anomalous Hall signals

Physical Mechanism

The transition mechanism can be understood as a competitive effect:

• Thin Layer Limit: Interface exchange field acts as an effective Zeeman field, suppressing weak anti-localization according to MF theory
• Thick Layer Limit: Spin-dependent interface scattering and spin accumulation effects dominate, producing GMR

Limitations

1. Temperature Constraints: Experiments are primarily conducted below the Curie temperature of EuS (~20 K)
2. Material Specificity: Results are mainly specific to the EuS/Au system; other MI/N combinations require further verification
3. Theoretical Models: The transition mechanism in the intermediate thickness region requires more refined theoretical description

Future Directions

1. Material System Expansion: Exploring combinations of other high-exchange-field MI materials with different heavy metals
2. Device Applications: Developing spintronic devices based on interface exchange fields
3. Theory Refinement: Establishing a more comprehensive theoretical framework for interface exchange field-controlled quantum transport

In-Depth Evaluation

Strengths

1. Ingenious Experimental Design: Systematic variation of Au thickness clearly demonstrates the transition of physical mechanisms
2. Close Theory Integration: Successfully connects experimental results with MF theory and SMR theory
3. Comprehensive Measurements: Combines magnetoresistance, Hall effect, and magnetization measurements, providing a complete physical picture
4. Novel Findings: First observation of GMR in MI/N/MI structures, possessing significant scientific value

Weaknesses

1. Temperature Range Limitation: Limited by the Curie temperature of EuS, restricting room-temperature applications
2. Mechanism Explanation: The transition mechanism in the intermediate thickness region lacks sufficient depth of explanation
3. Quantitative Analysis: The physical significance of certain theoretical fitting parameters requires clearer elucidation

Impact

1. Scientific Contribution: Provides new experimental evidence for interface exchange field-controlled quantum transport
2. Technical Application: Offers design insights for developing novel spintronic devices
3. Field Advancement: Likely to stimulate further research on quantum transport at MI/N interfaces

Applicable Scenarios

1. Low-Temperature Spintronic Devices: Suitable for applications requiring strong interface exchange fields
2. Quantum Transport Research: Provides a platform for studying interface effects on quantum coherence
3. New Material Exploration: Offers reference for discovering efficient spin injection interfaces

References

The paper cites 59 important references, covering multiple aspects including weak localization theory, GMR effects, spin Hall magnetoresistance, and EuS-related research, providing a solid theoretical and experimental foundation for the research.

Overall Assessment: This is a high-quality condensed matter physics experimental paper that successfully observes novel physical phenomena through carefully designed experiments and provides reasonable theoretical explanations. The research results are of significant importance for understanding the role of interface exchange fields in quantum transport and open new directions for the development of spintronic devices.