Emerging Ferroelectric Domains: Stacking and Rotational Landscape of MoS2 Moire Bilayers

Basic Information

• Paper ID: 2510.10831
• Title: Emerging Ferroelectric Domains: Stacking and Rotational Landscape of MoS2 Moire Bilayers
• Authors: Anikeya Aditya, Ayu Irie, Nabankur Dasgupta, Rajiv K. Kalia, Aiichiro Nakano, Priya Vashishta
• Classification: cond-mat.mtrl-sci (Condensed Matter Physics - Materials Science)
• Institutions: Collaboratory for Advanced Computing and Simulation, University of Southern California; Department of Physics, Kumamoto University
• Paper Link: https://arxiv.org/abs/2510.10831

Abstract

This study systematically investigates the combined effects of stacking order and rotational angle in MoS₂ bilayers through molecular dynamics simulations. Starting from five high-symmetry bilayer stackings, twist angles ranging from 1° to 120° are applied to the top layer, revealing various relaxed moiré structures. Results demonstrate that initial stacking significantly affects the moiré domain configuration formed at a given twist angle. While all five stacking orders are metastable at zero twist, they form two moiré equivalence classes: AA/AB and AA'/A'B/AB'. Specifically, initial AA and AB stackings produce triangular ferroelectric domains near 0±3°, while AA', A'B, and AB' stackings produce triangular ferroelectric domains near 60±3°.

Research Background and Motivation

Research Problem

The core problem addressed by this study is: How does stacking order influence the structure and ferroelectric properties of moiré superlattices in twisted two-dimensional material bilayers?

Significance

1. Development of Twistronics: Moiré superlattices exhibit exotic properties including superconductivity, correlation-driven Mott insulating states, and quantum anomalous Hall effects
2. Application Prospects: Significant potential applications in quantum information, optoelectronics, and strain engineering
3. Theoretical Refinement: Existing research primarily focuses on the effects of twist angle, while the role of stacking order remains relatively unexplored

Limitations of Existing Methods

• Most studies concentrate on specific stacking configurations (e.g., 3R or 2H)
• Lack of systematic comparison across different initial stacking orders
• Insufficient understanding of moiré equivalence classes

Research Motivation

Through systematic molecular dynamics simulations, establish explicit relationships between stacking order and moiré domain morphology, providing theoretical guidance for twistronics device design.

Core Contributions

1. Discovery of Moiré Equivalence Classes: Demonstrate that five high-symmetry stackings form two moiré equivalence classes (3R class: AA/AB; 2H class: AA'/A'B/AB')
2. Establishment of Rotational Relationships: Reveal the rotational symmetry whereby 60° rotation converts 3R stackings to 2H stackings
3. Determination of Ferroelectric Regions: Precisely locate the angular ranges of ferroelectric triangular domains (3R class: 0±3°; 2H class: 60±3°)
4. Systematic Analysis Methodology: Develop molecular dynamics-based methods for stacking domain classification and dipole moment calculation

Methodology Details

Task Definition

Input: Five high-symmetry MoS₂ bilayer stackings (AA, AB, AA', A'B, AB') Output: Relaxed moiré structures and stacking domain distributions at different twist angles Constraints: Twist angle range 1°-120°, step size 1°

Model Architecture

1. Molecular Dynamics Simulation Framework

• Force Field Selection:
  • Stillinger-Weber (SW) potential: intra-layer Mo-S interactions
  • Kolmogorov-Crespi (KC) potential: inter-layer interactions
• Geometric Setup: Circular bilayer flakes with diameter 4000 Å
• Boundary Conditions: Atoms in outer 50 Å region fixed to prevent slipping

2. Stacking Domain Classification Algorithm

# Core logic of stacking identification algorithm
for each Mo atom in top layer:
    identify 3 closest S neighbors
    create cylindrical region around Mo + 3S atoms
    assign signature based on atoms below in cylinder
    classify stacking type by unique signature

3. Dipole Moment Calculation Method

$\vec{D} = \sum_i q_i \vec{r_i}$ where $q_i$ and $\vec{r_i}$ are the charge and position of the i-th atom within the cylindrical region, respectively.

Technical Innovations

1. Systematic Rotational Study: First complete analysis of all five high-symmetry stackings across 0°-120° rotation
2. Moiré Equivalence Class Concept: Propose and validate the equivalence of different initial stackings under twisting
3. Multi-scale Analysis: Combine atomic-level structural analysis with macroscopic dipole moment calculations
4. Rotational Symmetry Revelation: Discover the structural conversion pattern at 60° rotation

Experimental Setup

Computational Parameters

• Software: LAMMPS molecular dynamics package
• Relaxation Method: Conjugate gradient energy minimization
• Convergence Criteria: Energy tolerance 10⁻⁶ eV, force tolerance 10⁻⁶ eV/Å
• Temperature Stability Testing: NVE ensemble at 300K, 100,000 steps

Structure Characterization Methods

• Interlayer Distance: Defined by Mo-Mo atomic distances
• Relative Energy: Referenced to the most stable AB stacking as zero point
• Stacking Domain Statistics: Quantified by atomic percentage of each stacking type

Analysis Metrics

• 3R stacking atomic percentage (AA, AB, BA)
• 2H stacking atomic percentage (AA', A'B, AB')
• AB/BA domain balance (ferroelectricity criterion)
• Dipole moment distribution (x, y, z directions)

Experimental Results

Main Results

1. Moiré Equivalence Class Verification

• 3R Class (AA, AB): Form triangular ferroelectric domains at 0±3°
• 2H Class (AA', A'B, AB'): Form triangular ferroelectric domains at 60±3°
• Crossover Points: At 30° and 90°, all stackings exhibit identical 3R/2H distribution

2. Rotational Relationship Mapping

3. Ferroelectric Domain Characteristics

• Dipole Moment Magnitude:
  • Out-of-plane direction: ±60 D (within triangular domains)
  • In-plane direction: ±5 D (at domain boundaries)
• Domain Structure: Alternating AB and BA triangular domains with high-energy AA stacking at vertices

Key Findings

1. 60° Periodicity: Ferroelectric regions are offset by 60° relative to initial stacking class
2. Structural Conversion: Complete high-symmetry stacking conversion occurs at 60° and 120°
3. Energy Stability: At room temperature, AA converts to AB, and AB' converts to A'B
4. Quasicrystalline State: 30° corresponds to a quasicrystalline region with no periodic unit cell

Case Studies

Case 1: BA Initial Stacking + 1° Twist

• Forms alternating AB/BA triangular domains
• Out-of-plane dipole moment ±60 D
• In-plane dipole moment ±5 D at domain boundaries

Case 2: AA' Initial Stacking + 1° Twist

• Forms AA'-dominated hexagonal domains
• Dipole moment near zero within domains
• Dipole moment exists only at boundaries

Related Work

Major Research Directions

1. Twisted Graphene Bilayers: Magic-angle superconductivity and correlated insulating states
2. TMDC Heterostructures: Moiré excitons in MoS₂/WSe₂
3. Ferroelectric Domain Research: Ferroelectricity in WSe₂ homobilayers

Advantages of This Work

• Comprehensiveness: Covers all high-symmetry stackings and complete angular range
• Theoretical Depth: Establishes theoretical framework for moiré equivalence classes and rotational relationships
• Methodological Innovation: Develops specialized stacking domain identification algorithm

Conclusions and Discussion

Main Conclusions

1. Initial stacking order is the key determinant of moiré domain configuration
2. Five stackings form two moiré equivalence classes with 60° rotational symmetry
3. The appearance angle range of ferroelectric triangular domains can be predicted from initial stacking
4. 60° rotation enables 3R↔2H stacking type conversion

Limitations

1. Force Field Accuracy: Classical force fields may not fully capture quantum effects
2. Size Effects: 4000 Å flakes may exhibit finite-size effects
3. Temperature Effects: Only 0K and 300K considered; intermediate temperature analysis lacking
4. Kinetic Processes: Domain formation kinetics not investigated

Future Directions

1. Validate force field results with first-principles calculations
2. Investigate electric field modulation of moiré ferroelectric domains
3. Explore similar phenomena in other TMDC materials
4. Develop device applications based on stacking engineering

In-Depth Evaluation

Strengths

1. High Systematicity: First complete investigation of twist behavior for all high-symmetry stackings
2. Theoretical Contribution: Proposes moiré equivalence class concept with significant theoretical value
3. Reliable Methodology: Molecular dynamics parameters show good agreement with DFT results
4. Application Guidance: Provides clear guidance for twistronics device design

Weaknesses

1. Lack of Experimental Validation: Absence of experimental data supporting theoretical predictions
2. Insufficient Electronic Property Analysis: Focus primarily on structure; limited electronic band structure analysis
3. Missing Kinetic Mechanisms: Insufficient investigation of domain formation and evolution mechanisms

Impact

1. Academic Value: Provides new theoretical framework for two-dimensional material moiré physics
2. Application Prospects: Guides design and fabrication of ferroelectric moiré devices
3. Reproducibility: Detailed method and parameter descriptions facilitate reproduction

Applicable Scenarios

1. Basic Research: Theoretical studies of two-dimensional material moiré superlattices
2. Device Design: Applications in ferroelectric memory and sensors
3. Material Screening: Prediction of moiré properties in other layered materials

References

This paper cites 49 important references covering:

• Fundamental twistronics theory (Cao et al., Nature 2018)
• TMDC material properties (Liu et al., J. Phys. Chem. C 2012)
• Moiré superlattice experiments (Weston et al., Nature Nanotechnology 2020)
• Molecular dynamics methodology (Thompson et al., Computer Physics Communications 2022)

Overall Assessment: This is a theoretically important research paper in the field of two-dimensional material moiré physics. Through systematic molecular dynamics investigation, it establishes explicit relationships between stacking order and moiré domain structure, proposes the important concept of moiré equivalence classes, and provides valuable guidance for both theoretical development and practical applications in this field.