Thermal Analysis of 3D GPU-Memory Architectures with Boron Nitride Interposer

Basic Information

• Paper ID: 2510.11461
• Title: Thermal Analysis of 3D GPU-Memory Architectures with Boron Nitride Interposer
• Authors: Eric Han Wang (College Station High School), Weijia Yan (Texas A&M University), Ruihong Huang (Texas A&M University)
• Classification: eess.SP (Signal Processing)
• Corresponding Authors: weijia_yan@tamu.edu, huangrh@tamu.edu
• Paper Link: https://arxiv.org/abs/2510.11461

Abstract

As the power consumption of artificial intelligence chips continues to increase, the thermal management capabilities of traditional silicon-based substrates are insufficient to meet the requirements of 3D stacking designs. This study integrates hexagonal boron nitride (h-BN) interposer layers—which are electrically insulating yet possess excellent thermal conductivity—into AI chips to achieve effective thermal management. Using COMSOL Multiphysics simulation software, the effects of high bandwidth memory (HBM) distribution and thermal interface material configuration on heat dissipation and hotspot mitigation were investigated. Compared to silicon interposers, h-BN interposers achieved a 20°C reduction in hotspot temperature, which can reduce AI chip power leakage by 22%, significantly improving thermal performance.

Research Background and Motivation

Problem Definition

1. Core Challenge: 3D stacked AI chips face severe thermal management challenges, with average heat flux density approximately 300 W/cm², and local hotspots reaching 500-1000 W/cm²
2. Technical Constraints: Traditional silicon-based interposers have limitations in thermal conductivity and leakage control at elevated temperatures
3. Application Requirements: Vertically stacked GPU-HBM architectures require efficient thermal management solutions to ensure performance stability and long-term reliability

Research Significance

• The presence of hotspots significantly increases risks of electromigration, chip cracking, delamination, and melting
• Elevated temperatures exacerbate leakage currents, affecting accuracy and consistency of AI workloads
• Thermal management has become a critical consideration in next-generation AI hardware design

Limitations of Existing Approaches

• Silicon interposers have limited thermal conductivity (130-150 W/m·K)
• Traditional thermal interface materials underperform under extreme heat flux densities
• Existing electrically insulating thermally conductive materials (such as AlN and diamond) suffer from process complexity or mechanical reliability issues

Core Contributions

1. First Proposal of h-BN Interposer Solution: Employs hexagonal boron nitride as an interposer material for 3D AI chips, leveraging its superior in-plane thermal conductivity (751 W/m·K) and electrical insulation properties
2. Systematic Thermal Management Optimization Strategy: Systematically investigates the effects of HBM distribution and interposer thickness on thermal performance through COMSOL simulation
3. Significant Performance Improvements: Achieves 20°C hotspot temperature reduction, equivalent to 6% thermal resistance reduction and 22% CMOS power leakage reduction
4. Design Guidelines: Determines optimal HBM layout (5 HBMs/layer × 4 layers) and h-BN thickness (~300 μm)

Methodology Details

Task Definition

Input: 3D GPU-HBM stacking architecture parameters (geometric dimensions, material properties, power density, boundary conditions) Output: Temperature distribution, hotspot temperature, thermal resistance characteristics Constraints: Steady-state heat transfer conditions, prescribed convection boundary conditions

Model Architecture

Physical Model

Establishes heat transfer model based on 3D steady-state heat conduction equation:

k(∂²T/∂x² + ∂²T/∂y² + ∂²T/∂z²) + q̇g = 0

Where:

• k: thermal conductivity W/m·K
• T: temperature field K
• q̇g: volumetric heat generation rate W/m³

Boundary Conditions

Employs Newton's law of cooling:

-ks(∂T/∂n) = h(T - Te)

• Top surface: forced convection h_amb = 150-350 W/(m²·K)
• Bottom surface: natural convection hb = 10 W/(m²·K)

Material Properties Comparison

Technical Innovations

1. Material Innovation: h-BN's in-plane thermal conductivity is five times that of silicon while maintaining electrical insulation properties
2. Structural Optimization: Systematically investigates the effects of multi-layer HBM distribution on thermal performance
3. Thickness Optimization: Identifies saturation effects in optimal h-BN interposer thickness
4. Multi-physics Coupling: Considers electro-thermal coupling effects and transient response characteristics

Experimental Setup

Simulation Platform

• Software: COMSOL Multiphysics
• Solver: 3D steady-state and transient heat transfer solver
• Mesh: Structured mesh with refinement in hotspot regions

Design Parameters

• GPU Power Density: 100 W/cm²
• HBM Configuration: 5-layer stacking structure
• Total HBM Modules: 20 modules
• Interposer Thickness Range: 50-500 μm
• TDP Test Range: 100W, 200W, 300W

Evaluation Metrics

1. Hotspot Temperature: Maximum temperature at GPU layer
2. Temperature Uniformity: Standard deviation of temperature distribution
3. Thermal Resistance: Total thermal resistance of heat flow path
4. Transient Response: Time constant to reach thermal equilibrium

Experimental Results

HBM Distribution Optimization

Investigated six different HBM distribution configurations:

• 20 HBMs/layer × 1 layer: hotspot temperature 315°C, maximum hotspot area
• 10 HBMs/layer × 2 layers: significantly reduced hotspot area, slight temperature decrease
• 5 HBMs/layer × 4 layers: hotspot temperature reduction exceeding 10°C, achieving optimal balance
• 1 HBM/layer × 20 layers: further improvement but limited gains

Key Finding: The 5 HBMs/layer × 4 layers configuration achieves the best balance between thermal performance and design complexity.

h-BN Thickness Optimization

• 50-300 μm: Significant temperature decrease
• >300 μm: Temperature improvement approaches saturation
• Optimal Thickness: ~300 μm, balancing thermal performance and material cost

Performance Comparison at Different TDP Levels

GPU temperature follows the relationship:

TGPU ∝ (q̇g · L²)/keff

Main Results:

• Temperature Reduction: h-BN compared to Si interposer reduces temperature by 20°C
• Thermal Resistance Reduction: 6% thermal resistance reduction (at 300 W/cm² heat flux density)
• Power Leakage: CMOS power leakage reduced by 22%
• Response Time: Approximately 10 seconds to reach thermal equilibrium

Transient Characteristics Analysis

• Initial Phase (0-10s): Rapid temperature rise, with rise rate dependent on power density, heat capacity, and initial thermal resistance
• Steady State (>10s): Thermal equilibrium achieved, input power balanced with dissipated power
• h-BN Advantage: Superior to silicon interposer at all TDP values

Related Work

3D Integrated Circuit Thermal Management

• Traditional approaches primarily rely on advanced thermal interface materials and embedded cooling strategies
• Interposer technology is considered one of the most promising solutions

Novel Thermal Management Materials

• Diamond Films: High thermal conductivity but complex processing with delamination risks
• Aluminum Nitride (AlN): Electrically insulating and thermally conductive but limited integration density
• h-BN: 2D layered structure, excellent chemical stability, strong compatibility with advanced packaging

Advantages of This Work

• First systematic integration of h-BN into 3D AI chip architecture
• Provides comprehensive design optimization strategy
• Quantifies performance improvement effects

Conclusions and Discussion

Main Conclusions

1. Material Advantages Confirmed: h-BN interposers demonstrate significant advantages over traditional silicon interposers in thermal management
2. Design Optimization Guidance: Determines optimal HBM distribution (5/layer × 4 layers) and h-BN thickness (300 μm)
3. Performance Improvement Quantified: 20°C temperature reduction and 22% power leakage reduction provide clear benefit expectations for practical applications

Limitations

1. Simulation Constraints: Based on idealized material properties and boundary conditions; interface thermal resistance under actual manufacturing not fully considered
2. Cost Analysis Missing: Lacks trade-off analysis between h-BN material and process costs versus performance benefits
3. Long-term Reliability: Insufficient data on h-BN long-term stability under high-temperature cycling
4. Manufacturing Process: Lacks detailed discussion of specific manufacturing and integration processes for h-BN interposers

Future Directions

1. Experimental Validation: Fabricate actual devices to verify simulation results
2. Interface Optimization: Investigate interface thermal resistance optimization between h-BN and other materials
3. Cost-Benefit Analysis: Conduct comprehensive techno-economic analysis
4. Reliability Testing: Perform long-term thermal cycling and mechanical stress testing

In-Depth Evaluation

Strengths

1. Strong Innovation: First systematic application of h-BN to 3D AI chip thermal management with clear technical innovation
2. Scientific Methodology: Employs mature COMSOL simulation platform with reasonably established physical models and realistic parameter settings
3. Significant Results: 20°C temperature reduction and 22% power leakage reduction possess important engineering value
4. Systematic Approach: Forms a complete research chain from material selection, structural optimization to performance evaluation

Weaknesses

1. Lack of Experimental Validation: Entirely simulation-based, lacking actual fabrication and testing verification
2. Insufficient Cost Consideration: h-BN material costs are relatively high; economic analysis lacks depth
3. Process Feasibility: Insufficient discussion of practical manufacturing processes and integration challenges for h-BN interposers
4. Limited Comparison Baselines: Primarily compares with traditional silicon interposers; lacks comparison with other advanced thermal management solutions

Impact

1. Academic Value: Provides new material solutions and design perspectives for 3D integrated circuit thermal management
2. Engineering Significance: Offers important guidance for thermal design of next-generation high-power AI chips
3. Industry Promotion: May drive industrial application of h-BN materials in semiconductor packaging

Applicable Scenarios

1. High-Power AI Chips: Particularly suitable for GPU-HBM stacking architecture thermal management
2. 3D Integrated Circuits: Generalizable to other types of 3D stacked chip designs
3. Data Centers: Server chip applications with extreme heat density requirements
4. Edge Computing: High-performance computing devices in heat-dissipation-constrained environments

References

The paper cites 25 relevant references covering multiple domains including 3D integrated circuits, thermal management materials, and AI chip design. The citation coverage is comprehensive and current, reflecting the authors' in-depth understanding of the field.

Overall Assessment: This is an innovative and practically valuable research paper in the field of 3D AI chip thermal management. Although lacking experimental validation, its systematic simulation research, significant performance improvements, and clear design guidelines provide important value in both academic and engineering applications. Subsequent work should focus on experimental validation and engineering implementation.