High Throughput Optical Switching in Telecommunication Band via Hybrid Phase Change Metasurfaces

Basic Information

• Paper ID: 2510.11881
• Title: High Throughput Optical Switching in Telecommunication Band via Hybrid Phase Change Metasurfaces
• Authors: Amin Zamani, Gabriel Sanderson, Lu Zhang, Qiwei Miao, Sara Moujdi, Ze Zheng, Mohammadhossein Momtazpour, Christopher J. Mellor, Wending Zhang, Ting Mei, Zakaria Mansouri, Lei Xu*, Mohsen Rahmani*
• Classification: physics.optics
• Institutions: Nottingham Trent University, Northwestern Polytechnical University, University of Nottingham
• Paper Link: https://arxiv.org/abs/2510.11881

Abstract

The demands of modern telecommunication systems for more efficient data transmission have made nanoscale high-throughput all-optical switching a critical requirement. Metasurface-based platforms offer unique advantages through their compact design, energy efficiency, and subwavelength-scale precise optical manipulation capabilities. This study develops monolithic and hybrid metasurfaces based on the phase change material antimony trisulfide (Sb₂S₃) to address the challenges of high transmission modulation and low optical loss in the telecommunication band. The research demonstrates that Sb₂S₃ can provide modulation depths up to 91% even under low-Q magnetic dipole resonance conditions, and through a hybrid approach involving silicon thin film deposition, the simulated modulation depth can be enhanced to 99%. Experimentally, both hybrid and monolithic structures achieved modulation exceeding 80%, with the hybrid design reducing switching power requirements by nearly 2-fold.

Research Background and Motivation

Problem Definition

1. Core Challenge: Modern telecommunication systems urgently require all-optical switches achieving high transmission modulation depth and low optical loss in the telecommunication band
2. Technical Bottlenecks: Traditional modulation methods have significant limitations:
   • Thermal modulators require continuous power supply with high static power consumption
   • MEMS systems involve complex fabrication requiring precise alignment
   • Plasmonic metasurfaces suffer from significant ohmic losses
   • Magnetic modulation exhibits slow response speeds with limited pixel control

Research Significance

• Rapid growth in data transmission demands drives development of nanoscale photonic devices
• Metasurfaces, as planar arrays of subwavelength resonant nanostructures, can manipulate light phase, amplitude, polarization, and propagation direction through resonant interactions
• Dielectric metasurfaces in the infrared region exhibit lower optical losses compared to plasmonic counterparts

Limitations of Existing Approaches

• GST-based metasurfaces show increased absorption after crystallization, reducing optical efficiency
• VO₂ metasurface switching speeds are limited, requiring continuous voltage to maintain thermal stability
• Current designs are constrained by thermal actuation, polarization dependence, and complex dual-drive configurations

Core Contributions

1. First Demonstration: Sb₂S₃-based metasurfaces can achieve modulation depths up to 91% even under low-Q magnetic dipole resonance, eliminating the need for complex precision-manufactured metasurfaces
2. Development of Simple and Effective Hybrid Method: Silicon thin film deposition enhances simulated modulation depth to 99%
3. Achievement of Low-Power Switching: Hybrid design reduces power consumption by nearly 2-fold compared to monolithic structures while maintaining high modulation depth
4. Provision of CMOS-Compatible Solution: Demonstrates strong potential for integration with integrated photonic circuits and next-generation telecommunication systems

Methodology Details

Material Characteristics Analysis

• Advantages of Sb₂S₃:
  • Refractive index contrast between amorphous and crystalline states: Δn ≈ 0.74
  • Intrinsically low optical loss in telecommunication band (k < 10⁻⁴)
  • CMOS platform compatibility
  • Large refractive index tunability

Monolithic Metasurface Design

• Geometric Parameters:
  • Pillar height: 300 nm
  • Pillar radius: 325 nm
  • Periodicity: 900 nm
• Resonance Mechanism: Supports lowest-order Mie-type magnetic dipole (MD) resonance
• Design Advantages:
  • High tolerance to fabrication defects
  • Strong field confinement within pillars enhances light-matter interaction
  • Broad spectral bandwidth

Hybrid Metasurface Architecture

• Structural Composition: Sb₂S₃ nanodisk metasurface + 100 nm thick silicon layer
• Operating Principle:
  • Silicon layer modifies transmission channels of non-resonant modes
  • Interacts with leaky channels of guided mode resonances
  • Produces narrow asymmetric line shapes exhibiting Fano-like interference characteristics
• Multipolar Characteristics: Primarily dominated by electric octupole (EO), electric dipole (ED), and magnetic quadrupole (MQ) excitations

Phase Change Mechanism

• Laser-Induced Crystallization: Selective crystallization of Sb₂S₃ using 532 nm continuous-wave laser
• Power Requirements:
  • Monolithic structure: 110 mW (energy density 7 kJ/cm²)
  • Hybrid structure: 65 mW (energy density 4.1 kJ/cm²)
• Crystallization Threshold: Initial crystallization threshold energy density 3.8 kJ/cm²

Experimental Setup

Fabrication Process

1. Thin Film Deposition: Thermal evaporation of Sb₂S₃ on fused silica substrates
2. Patterning: Standard electron beam lithography and etching
3. Hybridization: Plasma-enhanced chemical vapor deposition (PECVD) of silicon layer

Characterization Methods

• Optical Characterization: Köhler illumination system, Thorlabs SLS302 white light source, and Ocean Optics NIRQuest spectrometer
• Phase Change Induction: 2.5 W 532 nm DPSS continuous-wave laser
• Numerical Simulation: Rigorous coupled-wave analysis (RCWA) in MATLAB and finite element method in COMSOL Multiphysics

Evaluation Metrics

Modulation depth η calculation formula:

η = [(Tmax - Tmin) / Tabsolute max] × 100%

where Tmax and Tmin are maximum and minimum transmission intensities, respectively, and Tabsolute max is the highest absolute transmission rate.

Experimental Results

Main Results

Monolithic Metasurface Performance

• Resonance Shift: Red-shifted from 1400 nm in amorphous state to 1560 nm in polycrystalline state, with 140 nm shift
• Modulation Depth:
  • Simulated result: 91.5%
  • Experimental result: 92%
• Required Crystallinity: Approximately 53% crystallization of PCM

Hybrid Metasurface Performance

• Resonance Characteristics: Sharp resonance at 1457 nm
• Modulation Depth:
  • Simulated result: 99% (requiring only 3% crystallization)
  • Experimental result: Approximately 90%
• Power Advantage: Approximately 41% power reduction compared to monolithic structure

Multipolar Decomposition Analysis

• Monolithic Structure: At 1400 nm, primarily dominated by magnetic dipole resonance with contributions from electric dipole, electric quadrupole, and magnetic quadrupole
• Hybrid Structure: At 1457 nm, primarily dominated by electric octupole, electric dipole, and magnetic quadrupole excitations

Angular Dependence

Supporting information Figure S3 demonstrates that the monolithic metasurface maintains large incident angle independence in the infrared range, with high transmission and minimal angular dependence up to 50° for half-crystalline and fully crystalline states at 1314 nm and 1422 nm.

Performance Comparison

Comparison with typical metasurface optical switches in literature shows excellent performance in modulation depth:

• Sb₂S₃ monolithic structure: 91% modulation depth
• Sb₂S₃/Si hybrid structure: 99% modulation depth
• Switching speed: 100 ms
• Operating wavelength: Telecommunication band (1460-1560 nm)

Related Work

Development of Phase Change Material Metasurfaces

• GST Series: Materials such as Ge₂Sb₂Te₅ and Ge₂Sb₂Se₄Te₁, while widely applied, suffer from increased absorption after crystallization, limiting optical efficiency
• VO₂ Material: Limited switching speed, requiring continuous voltage to maintain stability
• Sb₂S₃ and Sb₂Se₃: Gaining attention due to low optical loss in visible and infrared ranges, large refractive index contrast, and CMOS compatibility

Comparison of Modulation Mechanisms

• Mechanical Modulation: Achieved through physical movement, but complex fabrication
• Thermal Modulation: Requires continuous power with high static consumption
• Electro-Optic Modulation: Fast response but limited modulation depth
• Laser-Induced Phase Change Material Modulation: This work's approach, with advantages of low loss and high contrast

Conclusions and Discussion

Main Conclusions

1. Material Advantages Verified: Sb₂S₃ exhibits superior optical modulation performance in the telecommunication band with refractive index change of 0.74 and optical loss k < 10⁻⁴
2. Design Strategy Effective: High modulation depth of 91% achievable even with low-Q magnetic dipole resonance
3. Hybrid Approach Superior: Silicon integration not only enhances modulation depth to 99% but also significantly reduces switching power consumption
4. Strong Practicality: Experimental verification of modulation depth exceeding 80% demonstrates practical application potential

Limitations

1. Fabrication Precision Effects: Silicon deposition modeling approximations and spectrometer resolution limitations affect measurement accuracy
2. Switching Speed: Current 100 ms switching time may be unsuitable for certain high-speed applications
3. Reversibility Verification: Paper insufficiently discusses stability and reversibility over multiple switching cycles
4. Temperature Dependence: Laser power dependence on temperature may affect device performance under different environmental conditions

Future Directions

1. Optimization of Fabrication Process: Improve uniformity of silicon layer deposition and interface quality
2. Switching Speed Enhancement: Explore pulsed laser or other rapid phase change induction methods
3. Multi-Level Modulation: Utilize partial crystallization for multi-level optical modulation
4. Integration Development: Deep integration with silicon photonic platforms to develop on-chip optical switch arrays

In-Depth Evaluation

Strengths

1. Strong Technical Innovation:
   • First demonstration that low-Q resonances can achieve high modulation depth, challenging conventional wisdom
   • Simple and effective hybrid strategy significantly enhances performance
   • Rational material selection fully exploits low-loss characteristics of Sb₂S₃
2. Comprehensive Experimental Design:
   • Combines theoretical simulation with experimental verification
   • Multipolar decomposition analysis deeply reveals physical mechanisms
   • Comprehensive and objective literature comparison
3. High Practical Value:
   • Strong CMOS compatibility facilitates industrialization
   • Significant power reduction aligns with energy efficiency requirements
   • Operation in telecommunication band offers broad application prospects

Shortcomings

1. Insufficient Theoretical Analysis Depth:
   • Physical mechanism of silicon-Sb₂S₃ interface interaction in hybrid structures insufficiently analyzed
   • Lacks detailed theoretical derivation of Fano resonance formation mechanism
2. Limited Experimental Verification:
   • No long-term stability testing conducted
   • Lacks large-area uniformity verification
   • Temperature dependence characterization insufficient
3. Performance Optimization Space:
   • Switching speed still lags behind electro-optic modulation methods
   • Although improved, absolute power consumption remains relatively high

Impact Assessment

1. Academic Contribution: Provides new design concepts and material selection for phase change material metasurface optical switches
2. Technical Advancement: Promotes development of low-loss optical switching technology
3. Industrial Value: Provides technical foundation for next-generation telecommunication systems and data center optical interconnects
4. Reproducibility: Standard fabrication process with readily available materials demonstrates good reproducibility

Applicable Scenarios

1. Optical Communication Systems: Wavelength division multiplexing, optical add-drop multiplexers
2. Data Centers: On-chip optical interconnects, optical switching matrices
3. Optical Computing: Reconfigurable optical neural networks, optical logic gates
4. Sensing Applications: Tunable optical sensors, adaptive optical systems

References

The paper cites 57 relevant references covering important works in multiple research fields including metasurfaces, phase change materials, and optical switches, providing solid theoretical foundation and technical comparison. Key references include pioneering work by Yu et al. on metasurface fundamentals, reviews by Wuttig et al. on photonic applications of phase change materials, and recent advances in GST, VO₂, and Sb₂S₃ materials for optical switching applications.