Fabrication of an atom chip for Rydberg atom-metal surface interaction studies

Basic Information

• Paper ID: 2510.11902
• Title: Fabrication of an atom chip for Rydberg atom-metal surface interaction studies
• Authors: O. Cherry, J. D. Carter, J. D. D. Martin (University of Waterloo)
• Classification: physics.atom-ph
• Publication Date: October 15, 2025 (manuscript prepared approximately 13 years ago)
• Paper Link: https://arxiv.org/abs/2510.11902

Abstract

This paper reports the fabrication of an atom chip designed for studying the interactions between ⁸⁷Rb Rydberg atoms and Au surfaces. The chip employs microfabricated current-carrying wires to generate high magnetic field gradients for tight confinement of cold atoms, which can be excited to Rydberg states at well-defined atom-surface distances. For Rydberg atom-surface interaction studies, the chip features a thermally evaporated Au surface layer separated from the underlying trapping wires by a flattened polyimide dielectric layer. Particular attention was devoted to the edge roughness of the trapping wires, the flattening of the polyimide, and the grain structure of the Au surface.

Research Background and Motivation

Problem Definition

Rydberg atoms (excited atomic states with high principal quantum number n) are significant for studying interactions with metal surfaces due to their exaggerated properties (polarizability scales as n⁷, ionization field scales as 1/n⁴). These interactions can be understood through mirror charge image theory, with energy shifts scaling as n⁴/z³ (where z is the surface distance).

Research Significance

1. Fundamental Physics: Rydberg atom-surface interactions provide an important window for understanding quantum phenomena at atomic-solid interfaces
2. Technological Applications: Potential applications in quantum information processing and precision measurement
3. Surface Science: Can be used to characterize surface stray electric fields (patch fields)

Limitations of Existing Methods

Previous Rydberg atom surface experiments faced two major challenges:

1. Distance Control: Difficulty in precisely controlling and determining atom-surface distance z
2. Stray Fields: Difficulty in minimizing the effects of surface stray electric fields

Research Motivation

To address these challenges through atom chip technology, enabling Rydberg atom-surface interaction studies at controllable separation distances and characterizing stray fields near the surface.

Core Contributions

1. Designed and fabricated a specialized atom chip: An atom chip with five parallel trapping wires capable of precise atomic position control within the 2-200 μm distance range
2. Resolved metallization challenges: Developed a Ti/Pd/Au metallization scheme addressing interdiffusion problems during high-temperature processing
3. Achieved high-quality flattening: Implemented a three-layer polyimide process achieving 85% degree of planarization (DOP)
4. Optimized surface characteristics: Fabricated an Au shielding layer with 40 nm average grain size for minimizing patch fields
5. Provided complete fabrication process: Detailed description of the complete fabrication workflow from design to final device

Detailed Methodology

Chip Design

Overall Architecture

• Dimensions: 2.02 × 2.02 cm (constrained by 2.75-inch Conflat port)
• Substrate: 40 nm thermally grown SiO₂ on Si substrate
• Wire Configuration: Five parallel trapping wires
  • Central wire: 7 μm wide, H-shaped structure
  • Inner U-shaped wires: 7 μm wide, 7 μm spacing from central wire
  • Outer U-shaped wires: 14 μm wide, 300 μm spacing

Trapping Strategy

Different wire combinations employed for different distance ranges:

• Far distance (z > 200 μm): Central wire + inner U-wires (co-directional current) vs. outer U-wires (counter-directional current)
• Intermediate distance (50 < z < 200 μm): Central wire vs. outer U-wires (counter-directional current)
• Near distance (z < 50 μm): Central wire vs. inner U-wires (counter-directional current)

Fabrication Process

Wire Fabrication

1. Photolithography: AZ 2035 nLOF negative photoresist, spin-coated at 2000 RPM, thickness 3.5-4.0 μm
2. Metal Deposition: Edwards E306A thermal evaporation system, base pressure 7×10⁻⁷-3×10⁻⁶ Torr
3. Metallization Scheme: Ti(20nm)/Pd(50nm)/Au(1.5μm)
   • Ti: Adhesion layer
   • Pd: Diffusion barrier layer
   • Au: Conductive layer
4. Lift-off Process: Warm acetone + hot Kwik Strip + ultrasonic isopropanol cleaning

Planarization Process

1. Polyimide Coating: PI 2562 polyimide
   • VM 652 adhesion promoter pretreatment
   • Three-layer coating with complete curing between layers
   • Single layer thickness: 1.3-1.5 μm
   • Curing conditions: 200°C/30 min + 350°C/60 min
2. Patterning Process:
   • Al mask layer (0.5-1 μm)
   • ICP-RIE etching (O₂ plasma)
   • Two-step etching to avoid pinholes

Shielding Layer Fabrication

1. Material Selection: Cr(12-20nm)/Au(100nm)
2. Deposition Method: Thermal evaporation + lift-off photolithography
3. Ground Connection: Silver-filled epoxy bonding to ground pads

Technical Innovations

Metallization Innovation

• Ti/Pd/Au Scheme: Innovatively addresses interdiffusion problems of traditional Cr/Au at elevated temperatures
• Diffusion Barrier: Pd layer effectively prevents Ti diffusion into Au
• Resistance Stability: Resistance change <1% after three curing cycles (Cr/Au change >120%)

Planarization Innovation

• Multi-layer Process: Three separately cured polyimide layers achieving 85% DOP
• Two-step Etching: Avoids pinhole formation, improving yield

Surface Optimization

• Grain Control: 40 nm average grain size achieved through controlled evaporation conditions
• Water-cooled Substrate: Reduces radiative heating damage to photoresist

Experimental Setup

Test Items

1. Wire Heating Characteristics: Current density testing (>9×10⁶ A/cm², 500 ms pulses)
2. Metallization Performance: Resistance change testing for different schemes
3. Edge Roughness: SEM characterization of wire edge quality
4. Planarization Degree: Surface roughness measurement using profilometry
5. Surface Morphology: SEM characterization of Au shielding layer grain structure

Characterization Methods

• Resistance Measurement: Four-probe method for wire resistance
• SEM Imaging: Microstructure and surface morphology characterization
• Profilometry: Dektak profilometer for surface roughness measurement
• Grain Analysis: Counting method for average grain size determination

Experimental Results

Main Results

Metallization Performance Comparison

Planarization Performance

• Single PI 2562 layer: 40% DOP
• Two layers (pre-curing): 50-60% DOP
• Two layers (separately cured): 70-80% DOP
• Three layers (separately cured): 80-90% DOP
• Final Achievement: 85% DOP (240 nm peak-to-peak variation)

Surface Characteristics

• Au grain size: 40 nm (100 nm thickness) → 60 nm (1.5 μm thickness)
• Wire edge roughness: ~100 nm (pre-curing) → ~200 nm (post-curing)
• Wire thickness: 1.5 μm
• Total polyimide thickness: 3.3 μm

Performance Verification

• Current Carrying Capacity: >9×10⁶ A/cm² (500 ms pulses, in air)
• Thermal Performance: Comparable to similar chips reported in literature
• Bonding Reliability: Excellent bonding strength with Ti/Pd/Au scheme

Related Work

Atom Chip Technology

Atom chips are based on the principle of paramagnetic atoms experiencing forces in non-uniform magnetic fields, using microfabricated current-carrying wires to generate local magnetic field minima for atom trapping. This technology has been widely applied to:

• Cold atom physics experiments
• Casimir-Polder force measurements
• Quantum gas research

Rydberg Atom-Surface Interactions

• Sandoghdar et al.: First spectroscopic observation of energy level shifts caused by mirror interactions
• Hill et al.: Verified field ionization occurs at 4.5a₀n² distance
• Current Challenges: Distance control and stray fields are major technical obstacles

Planarization Technology

• Reichel et al.: Used epoxy replica transfer technique, but with thickness reaching 25 μm
• BCB and Polyimide: Planarization materials compatible with standard cleanroom processes

Conclusions and Discussion

Main Conclusions

1. Successfully fabricated a specialized chip for Rydberg atom-surface interaction studies: Achieved precise atomic position control within 2-200 μm distance range
2. Resolved critical technical challenges: Ti/Pd/Au metallization scheme solved high-temperature interdiffusion problems
3. Achieved high-quality surfaces: 85% planarization degree and Au shielding layer with 40 nm grain size
4. Provided complete process solution: Detailed technical roadmap for similar device fabrication

Limitations

1. Lack of actual atom trapping verification: Paper reports only fabrication process, lacking actual trapping and Rydberg excitation experiments
2. Distance Uncertainty: Surface roughness becomes the primary uncertainty source at near distances (<10 μm)
3. Patch Fields Characterization: Theoretical predictions require experimental verification
4. Long-term Stability: Device long-term operational stability not reported

Future Directions

1. Experimental Verification: Conduct actual atom trapping and Rydberg excitation experiments
2. Patch Fields Measurement: Systematically characterize surface stray electric field distribution
3. Process Optimization: Further reduce surface roughness and grain size
4. Application Extension: Explore applications in quantum information and precision measurement

In-Depth Evaluation

Strengths

1. Strong Technical Innovation: Ti/Pd/Au metallization scheme innovatively solves high-temperature interdiffusion problems
2. Detailed Process Description: Provides complete, reproducible fabrication workflow
3. Multi-faceted Optimization: Systematic optimization from material selection to process parameters
4. In-depth Theoretical Analysis: Patch fields theoretical analysis guides experimental design
5. Rigorous Quality Control: Multiple characterization methods ensure device quality

Weaknesses

1. Lack of Functional Verification: No actual atom trapping experiments to verify chip functionality
2. Missing Cost-Benefit Analysis: No discussion of fabrication cost and process complexity
3. Insufficient Alternative Comparison: Limited discussion of other possible technical approaches
4. Environmental Adaptability: Insufficient discussion of performance stability under different environmental conditions

Impact

1. Academic Value: Provides important tools for the interdisciplinary field of Rydberg atom physics and surface science
2. Technology Advancement: Promotes development of atom chip fabrication technology
3. Application Prospects: Establishes foundation for quantum technology applications
4. Methodological Contribution: Provides process schemes for peer reference

Applicable Scenarios

1. Fundamental Research: Investigation of Rydberg atom-surface interaction mechanisms
2. Surface Characterization: Precision measurement of metal surface patch fields
3. Quantum Devices: Rydberg atom-based quantum information processing devices
4. Precision Measurement: Ultra-high precision electric field and distance measurement

References

This paper cites 40 important references covering classical works in Rydberg atom physics, atom chip technology, surface science, and microfabrication processes, providing solid theoretical and technical foundation for the research.

Overall Assessment: This is a high-quality technical paper detailing the fabrication process of an atom chip for Rydberg atom-surface interaction studies. Although lacking actual functional verification, its technical innovations and process optimization have significant reference value for related fields. The innovations in Ti/Pd/Au metallization scheme and multi-layer polyimide planarization process are particularly noteworthy.