The Comparison of Colloidal PbS QD Photoconductors and Hybrid Phototransistors

Basic Information

• Paper ID: 2510.11995
• Title: The Comparison of Colloidal PbS QD Photoconductors and Hybrid Phototransistors
• Authors: Gökhan Kara, Lorenzo J. A. Ferraresi, Dmitry N. Dirin, Roman Furrer, Maksym V. Kovalenko, Michel Calame, Ivan Shorubalko
• Classification: cond-mat.mtrl-sci (Condensed Matter Physics - Materials Science)
• Publication Date: October 13, 2025
• Paper Link: https://arxiv.org/abs/2510.11995v1

Abstract

This study directly compares the performance of photoconductors and hybrid phototransistors based on PbS colloidal quantum dot (cQD) thin films treated with the same EDT ligand exchange. The research reveals that although both device types exhibit comparable specific detectivity D*, high responsivity is more important than comparable detectivity for low-intensity light detection, as it is necessary to generate easily readable photocurrent. Furthermore, the study demonstrates the negative photocurrent (NPC) effect resulting from temperature-activated photocurrent dynamics, which simultaneously improves frequency bandwidth and photocurrent, enabling device operation at frequencies up to 100 kHz.

Research Background and Motivation

Problem Definition

1. Device Architecture Selection: Photoconductors are simple to fabricate but require large areas (mm² scale) with limited speed; hybrid phototransistors have small dimensions (μm² scale) but complex structure
2. Performance Evaluation Controversy: Is high responsivity or high detectivity more important for low-intensity light detection?
3. Unclear Dynamic Response Mechanisms: Lack of in-depth understanding of differences in photocurrent response between AC modulation and continuous illumination

Research Significance

• Technology Application Demands: Short-wave infrared (SWIR, 1-2.5 μm) imaging has urgent needs in biological imaging, night vision, and communications
• Device Miniaturization Trend: High-resolution imaging requires smaller pixel sizes, necessitating sufficient photocurrent signals over small areas
• Performance Optimization Guidance: Provides theoretical basis for selecting appropriate device architectures for different application scenarios

Limitations of Existing Methods

• Lack of Direct Comparison: Previous studies used different cQD thin film processing methods, making fair comparison difficult
• Neglect of Dynamic Effects: Most studies did not consider response differences between AC modulation and DC illumination
• Insufficient Understanding of Temperature Effects: Mechanism of negative photocurrent phenomena at low temperatures remains unclear

Core Contributions

1. First direct comparison of photoconductor (IFP) and hybrid phototransistor (HP) performance on identical samples, eliminating the influence of material differences
2. Revealed the importance of responsivity: At identical detectivity, high-responsivity devices generate larger readable photocurrent
3. Clarified AC/DC response difference mechanisms: Explained different responses to modulated and continuous light through carrier dynamics analysis
4. Discovered and explained negative photocurrent phenomena: Temperature and gate-voltage-activated NPC effect simultaneously improves bandwidth and photocurrent
5. Achieved high-frequency operation: NPC effect enables HP devices to operate at frequencies up to 100 kHz

Methodology Details

Device Architecture Design

Interdigitated Electrode Photoconductor (IFP)

• Structural Parameters: 30 gaps, channel length L = 10 μm, width W = 500 μm, total area 7500 μm²
• Operating Principle: cQD thin film serves simultaneously as light absorption layer and conductive channel
• Band Structure: EDT treatment forms p-type transport with μh > μe

Hybrid Phototransistor (HP)

• Structural Parameters: CVD graphene channel L × W = 20 × 1 μm², total area 20 μm²
• Operating Principle: cQD layer acts as photogating layer, graphene serves as conductive channel, achieving photogating effect
• Gain Mechanism: Trapped charge modulates graphene carrier concentration to produce optical gain

Material Preparation Process

PbS Quantum Dot Synthesis

• Synthesized ~6 nm PbS cQDs using Hines' method
• First exciton peak at 1550 nm, suitable for SWIR detection

Thin Film Preparation

• Layer-by-layer (LbL) spin-coating process
• EDT ligand exchange replacing native oleic acid ligands
• Final thickness ~170 nm, 6-layer structure

Measurement System

• Optical System: Broadband light source + monochromator + chopper modulation
• Electrical Measurement: Lock-in amplifier for AC photocurrent extraction
• Temperature Control: Liquid nitrogen cooling to 80 K optical cryostat
• Noise Measurement: Transimpedance amplifier + data acquisition system

Experimental Setup

Test Conditions

• Wavelength: 1550 nm (first exciton peak of PbS cQDs)
• Light Intensity: 120 μW/cm²
• Temperature Range: 80 K - 300 K
• Bias Voltage: VDS = 1 V
• Gate Voltage Range: -75 V to +75 V

Evaluation Metrics

• Responsivity: R = Iph/Pin (A/W)
• External Quantum Efficiency: EQE = REph/e (%)
• Specific Detectivity: D* = R√(A∆f)/Inoise (Jones)
• Time Constants: τ1, τ2 (photocurrent rise/fall times)

Measurement Modes

• DC Mode: Continuous illumination, Iph,const = IDS,light - IDS,dark
• AC Mode: 6 Hz modulated light, lock-in detection of Iph,AC
• Transient Response: Shutter-controlled, time-resolved photocurrent measurement

Experimental Results

Main Performance Comparison

IFP Device Performance

• Responsivity: Rconst ≈ 1 A/W (DC), RAC ≈ 30 mA/W (AC)
• External Quantum Efficiency: ~80% (DC), ~3% (AC)
• Specific Detectivity: ~10¹¹ Jones (at 210 K)
• Optimal Operating Temperature: Around 210 K

HP Device Performance

• Responsivity: Rconst ≈ 3×10⁵ A/W (DC), RAC ≈ 8×10³ A/W (AC)
• External Quantum Efficiency: ~10⁵% (DC), ~10⁴% (AC), showing obvious optical gain
• Specific Detectivity: ~10⁹ Jones
• Temperature Dependence: Superior low-temperature performance

Key Findings

1. Area-Normalized Analysis

When IFP area is reduced to the same 20 μm² as HP:

• IFP photocurrent drops to ~360 fA (noise level)
• HP photocurrent remains at nA level
• At identical D*, HP provides 6 orders of magnitude larger readable signal

2. AC/DC Response Difference Mechanism

• Faster Electron Transport: τ1 significantly decreases under positive gate voltage, activation energy ~40 meV
• Larger Hole Current: Higher photocurrent amplitude under negative gate voltage but slower response
• Trap State Effect: AC modulation highlights fast electron dynamics, DC illumination reflects slow hole processes

3. Negative Photocurrent (NPC) Phenomenon

• Occurrence Conditions: 80 K + positive gate voltage
• NPC in IFP: Schottky barrier at interface causes hole trapping
• NPC in HP: Band realignment at graphene-cQD interface, preferential electron transfer
• Performance Enhancement: NPC simultaneously improves bandwidth (+25 Hz) and photocurrent (+1 order of magnitude)

Frequency Response Characteristics

• IFP: Increased bandwidth after cooling but reduced photocurrent
• HP: NPC effect simultaneously increases bandwidth and photocurrent
• High-Frequency Operation: HP can operate up to 100 kHz

Related Work

Development of cQD Photodetectors

• Photoconductors: Earliest development, simple fabrication, R = 10⁻²-1 A/W, D* = 10⁹-10¹² Jones
• Photodiodes: Vertical structure, fast response (ns scale), but complex fabrication
• Hybrid Phototransistors: First reported by Konstantatos et al., R can reach 10⁶-10⁹ A/W

Carrier Transport Theory

• Hopping Transport Model: Primary transport mechanism in cQD thin films
• Trap State Distribution: Complex trap states caused by size, shape, and surface states
• Ligand Exchange Effect: EDT treatment forms p-type transport characteristics

Graphene-Based Photodevices

• Photogating Effect: Typical gain mechanism of 2D materials combined with quantum dots
• Interface Engineering: Band alignment critical to device performance
• Temperature Dependence: Effects of phonon scattering and other factors

Conclusions and Discussion

Main Conclusions

1. Responsivity vs. Detectivity: For small-area devices, high responsivity is more important than high detectivity, as sufficient readable photocurrent must be generated
2. Device Selection Guidance:
   • Large-area applications: IFP offers higher D* and simpler fabrication process
   • Small-area/high-resolution applications: HP provides larger readable signals
3. Dynamics Mechanism: In EDT-treated PbS cQD thin films, electron mobility exceeds hole mobility, explaining AC/DC response differences
4. Dual Effect of NPC: Negative photocurrent phenomenon improves both frequency response and sensitivity through photo-induced trap charge emission

Limitations

1. Material System Limitations: Only EDT-treated PbS cQDs studied; other ligands or materials may behave differently
2. Temperature Range Restrictions: NPC effect observed only at low temperatures, limiting practical applications
3. Fixed Device Size: Systematic study of size effects on performance lacking
4. Long-Term Stability: Lack of long-term device operation stability data

Future Directions

1. Material Optimization: Explore alternative ligand exchange strategies and quantum dot materials
2. Device Engineering: Optimize device structure to achieve NPC effect at room temperature
3. Array Integration: Develop focal plane arrays based on HP architecture
4. Theoretical Modeling: Establish more comprehensive carrier dynamics theoretical models

In-Depth Evaluation

Strengths

1. Rigorous Experimental Design: Fabricating both device types on identical samples eliminates material differences, ensuring fair comparison
2. In-Depth Mechanism Clarification: Multi-dimensional measurements including temperature dependence and transient response reveal carrier dynamics mechanisms
3. Outstanding Practical Value: Provides clear guidance for device selection in practical applications
4. Novel Phenomenon Discovery: NPC effect discovery and explanation has important scientific value
5. Advanced Technology: Achieves 100 kHz high-frequency operation, expanding application range

Shortcomings

1. Insufficient Theoretical Analysis Depth: Theoretical modeling of NPC phenomenon lacks depth, primarily based on qualitative analysis
2. Insufficient Statistical Data: Lacks statistical data from multiple devices; reproducibility needs verification
3. Missing Application Verification: Device performance not verified in actual imaging systems
4. Lacking Cost Analysis: No consideration of fabrication cost and process complexity comparison between two architectures

Impact

1. Academic Contribution: Provides new theoretical guidance for cQD photodevice design and optimization
2. Technology Advancement: Promotes development of small-area, high-performance SWIR detectors
3. Industrial Value: Provides device selection basis for infrared imaging, optical communications, and other industries
4. Methodological Exemplar: Establishes experimental paradigm for fair comparison of multi-architecture devices

Applicable Scenarios

1. High-Resolution Infrared Imaging: HP architecture suitable for small pixel array applications
2. Low-Intensity Light Detection: Detection of nW/cm² level weak signals
3. High-Speed Optical Communications: 100 kHz frequency response meets certain communication requirements
4. Portable Sensors: Simple fabrication of IFP suitable for cost-sensitive applications

References

The paper cites 40 important references covering cQD synthesis, device physics, and carrier transport. Particularly noteworthy include:

1. Konstantatos et al. (2012) - Pioneering work on hybrid graphene-quantum dot phototransistors
2. Saran & Curry (2016) - Comprehensive review of PbS nanocrystal photodetector technology
3. Guyot-Sionnest (2012) - Theoretical foundation of electrical transport in cQD thin films
4. Kahmann & Loi (2020) - Comprehensive review of trap states in lead chalcogenide cQDs

Overall Assessment: This is a high-quality materials science research paper that deeply reveals performance differences and physical mechanisms of two important photoelectric device architectures through carefully designed comparative experiments. The research not only possesses important scientific value but also provides valuable guidance for practical applications. The discovery and explanation of the NPC phenomenon is the highlight of this work, opening new directions for further device optimization.