Metalorganic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures

Basic Information

• Paper ID: 2510.12074
• Title: Metalorganic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures
• Authors: Vijay Gopal Thirupakuzi Vangipuram, Abdul Mukit, Kaitian Zhang, Salva Salmani-Rezaie, Hongping Zhao
• Classification: cond-mat.mtrl-sci physics.app-ph
• Institution: The Ohio State University
• Paper Link: https://arxiv.org/abs/2510.12074

Abstract

This study successfully grew AlScN thin films through metalorganic chemical vapor deposition (MOCVD), achieving controlled incorporation of scandium (Sc) into the AlN lattice. Through systematic adjustment of growth parameters, X-ray photoelectron spectroscopy (XPS) analysis demonstrated that Sc composition reached approximately 13% when using (MCp)₂ScCl as the precursor. AlScN/AlN/GaN heterostructures grown on GaN templates formed a two-dimensional electron gas (2DEG) channel at the AlScN/AlN-GaN interface, confirming their potential application in high electron mobility transistor (HEMT) device technology. Variation of the AlScN/AlN barrier thickness in the heterostructure revealed that thicker barriers produced higher sheet charge density in both Hall and capacitance-voltage (C-V) measurements. When the AlScN/AlN barrier thickness was approximately 30 nm, the sheet charge density extracted from C-V measurements was 5.22×10¹² cm⁻². High-resolution scanning transmission electron microscopy (S/TEM) further confirmed Sc incorporation and revealed the wurtzite crystal structure of the thin films and heterostructures.

Research Background and Motivation

Problem Background

The III-nitride material system (AlN, InN, GaN) has achieved significant advances in high-frequency, high-power, and optoelectronic applications over the past several decades. These binary compounds all share the same wurtzite crystal structure, providing extensive flexibility for designing high-performance electronic and optoelectronic devices.

Research Motivation

1. Material Performance Advantages: AlScN possesses multiple superior material characteristics, including:
   • Significantly enhanced piezoelectric response compared to AlN, offering opportunities for MEMS resonators, RF filters, and acoustic devices
   • Discovered ferroelectricity opening new pathways for memory applications
   • Band gap engineering prospects for optical and optoelectronic devices
2. Lattice Matching Advantages: AlScN with Sc composition in the 9-14% range can form lattice-matched structures with GaN, allowing epitaxial growth of thicker layers while still providing significant band offsets with GaN
3. Technical Challenges: Although AlScN thin film deposition has been extensively studied through sputtering and molecular beam epitaxy (MBE), research on achieving high-quality AlScN thin films via MOCVD remains relatively limited, with the primary limiting factor being the lack of suitable metalorganic precursors

Core Contributions

1. First Systematic Study: Systematic growth of AlScN thin films using (MCp)₂ScCl as the Sc precursor through MOCVD technology, achieving Sc incorporation up to 13%
2. Process Optimization: Optimized growth conditions by reducing the bubbler temperature to the 110-120°C range compared to the previously reported 155°C
3. Heterostructure Realization: Successfully fabricated AlScN/AlN/GaN heterostructures and confirmed 2DEG channel formation
4. Device Characteristics Verification: Verified the electrical properties of heterostructures through Hall and C-V measurements, establishing the foundation for HEMT device applications
5. Microstructural Characterization: Detailed characterization of thin film crystal structure and Sc distribution through S/TEM

Methodology Details

Experimental Setup

• Substrate: c-plane GaN/sapphire template
• Reactor: Modified MOCVD system equipped with SiC-coated graphite susceptor
• Precursors:
  • Al source: Trimethylaluminum (TMAl)
  • N source: NH₃
  • Sc source: Bis(methylcyclopentadienyl)scandium chloride ((MCp)₂ScCl)
• Carrier Gas: H₂

Growth Condition Optimization

Three primary samples (A, B, C) were studied with varied growth conditions:

• Sample A: Sc bubbler temperature 110°C, TMAl molar flow rate 0.53 µmol/min, growth duration 1 hour
• Sample B: Sc bubbler temperature 120°C, TMAl molar flow rate 0.53 µmol/min, growth duration 1 hour
• Sample C: Sc bubbler temperature 120°C, TMAl molar flow rate 0.29 µmol/min, growth duration 1.5 hours

Heterostructure Fabrication

Three AlScN/AlN/GaN heterostructures with different barrier thicknesses (samples D, E, F) were prepared:

• 300 nm unintentionally doped GaN buffer layer
• AlN intermediate layer grown for 2 minutes
• AlScN barrier layer with varying growth times (10, 20, 30 minutes)

Experimental Setup

Characterization Techniques

1. Structural Characterization:
   • X-ray diffraction (XRD) 2θ-ω scans: Bruker D8 Discover with Cu Kα radiation
   • Atomic force microscopy (AFM): Bruker AXS Dimension system
   • Scanning transmission electron microscopy (S/TEM): Thermo Fisher Scientific Themis Z
2. Electrical Characterization:
   • Mercury probe capacitance-voltage (C-V) measurements: Keysight E4980A LCR meter
   • Hall measurements: Ecopia HMS-3000 system with 0.985 T permanent magnet
3. Compositional Analysis:
   • X-ray photoelectron spectroscopy (XPS): ThermoFisher Nexsa G2 system
   • Energy-dispersive X-ray spectroscopy (EDS): Super-X EDS detector

Evaluation Metrics

• Sc composition determined through XPS band gap extraction method
• 2DEG sheet charge density extracted from C-V and Hall measurements
• Surface morphology characterized by AFM RMS roughness
• Crystal quality assessed through XRD peak position and intensity

Experimental Results

Main Results

Controllability of Sc Incorporation

1. Sample A: XRD peak at 36.02°, corresponding to relaxed AlN, no apparent Sc incorporation
2. Sample B: XRD peak shifted to 36.14°, XPS analysis showing ~6% Sc composition
3. Sample C: XRD peak further shifted to 36.18°, XPS analysis showing ~13% Sc composition

Surface Morphology Improvement

• Samples A and B exhibited pronounced crack formation resulting from tensile strain relaxation
• Sample C, with higher Sc composition approaching lattice matching conditions, showed no apparent surface cracks
• Sample C RMS surface roughness was 2.81 nm

Heterostructure Electrical Characteristics

C-V Measurement Results:

• Sample D (10 nm barrier): 1.59×10¹² cm⁻²
• Sample E (20 nm barrier): 2.84×10¹² cm⁻²
• Sample F (30 nm barrier): 5.22×10¹² cm⁻²

Hall Measurement Results:

• Sample D: n≈4.0×10¹³ cm⁻², mobility 780 cm²/Vs
• Sample E: n≈4.8×10¹³ cm⁻², mobility 646 cm²/Vs
• Sample F: n≈6.2×10¹³ cm⁻², mobility 562 cm²/Vs

Microstructural Analysis

S/TEM analysis revealed:

• Good crystal structure maintained throughout the grown layers
• Relatively uniform Sc distribution in the thin film
• Observed delayed Sc incorporation phenomenon
• Possible formation of AlGaN alloy layer at the interface with prolonged growth

Experimental Findings

1. Band Gap Engineering: XPS analysis showed band gap reduction from 5.87 eV (6% Sc) to 5.66 eV (13% Sc) with increasing Sc incorporation
2. Strain Management: AlScN with 13% Sc composition achieved approximate lattice matching with GaN
3. Interface Quality: All heterostructure samples displayed sharp transitions from depletion to accumulation regions, indicating high-quality GaN/AlN interfaces

Related Work

Primary Research Directions

1. Sputtering Method: AlScN thin films have been extensively studied through sputtering, but with limitations in crystal quality and interface control
2. MBE Growth: Molecular beam epitaxy can achieve high-quality AlScN, but with high cost and low throughput
3. MOCVD Technology: Fraunhofer Institute IAF is a pioneer in this field, achieving up to 30% Sc incorporation using custom close-coupled showerhead MOCVD reactors

Advantages of This Work

1. Process Simplification: Reduced operating temperature of Sc precursor
2. Systematic Study: First systematic investigation of MOCVD process parameters' effects on Sc incorporation
3. Device Verification: Direct verification of device characteristics of AlScN/AlN/GaN heterostructures

Conclusions and Discussion

Main Conclusions

1. Technical Feasibility: Successfully demonstrated the feasibility of growing high-quality AlScN thin films through MOCVD
2. Composition Control: Achieved controlled Sc incorporation up to 13%
3. Device Potential: AlScN/AlN/GaN heterostructures demonstrated good 2DEG characteristics suitable for HEMT devices
4. Process Optimization: Reduced growth temperature compared to literature reports, simplifying process conditions

Limitations

1. Growth Rate: Limited growth rate due to relatively low vapor pressure of Sc precursor
2. Surface Morphology: Typical III-nitride step-flow growth morphology not observed
3. Measurement Discrepancy: Significant differences between C-V and Hall measurements of sheet charge density, requiring further optimization of measurement methods
4. Sc Distribution: Observed lateral segregation of Sc, possibly related to dislocation defects

Future Directions

1. Precursor Development: Development of novel Sc precursors with higher vapor pressure
2. Process Optimization: Further optimization of growth conditions to improve surface morphology and Sc distribution uniformity
3. Device Fabrication: Complete HEMT device fabrication and performance evaluation
4. Ferroelectricity Research: Exploration of ferroelectric properties of AlScN thin films and their applications in memory devices

In-Depth Evaluation

Strengths

1. Technical Innovation: First systematic achievement of controlled AlScN thin film growth through MOCVD, providing new material options for III-nitride device technology
2. Comprehensive Experiments: Combined multiple characterization techniques (XRD, XPS, AFM, S/TEM, electrical measurements), providing comprehensive analysis of material and device characteristics
3. Practical Value: Direct verification of 2DEG formation, providing experimental foundation for HEMT device applications
4. Process Improvement: Reduced growth temperature compared to existing literature, enhancing process practicality

Limitations

1. Sc Composition Limitation: Maximum Sc composition reached only 13%, lower than levels achievable through sputtering and MBE methods
2. Measurement Consistency: Significant discrepancies between C-V and Hall measurement results, requiring better understanding of measurement error sources
3. Mechanism Analysis: Insufficient theoretical analysis of Sc incorporation mechanism and delayed incorporation phenomenon
4. Device Verification: Lack of complete HEMT device fabrication and performance testing

Impact

1. Academic Contribution: Provides important process reference for MOCVD growth of AlScN, advancing technological development in this field
2. Industrial Value: Provides technical foundation for industrialization of high-performance electronic devices based on AlScN
3. Reproducibility: Detailed experimental conditions and characterization methods facilitate reproduction of results by other research groups

Applicable Scenarios

1. High-Frequency Electronic Devices: HEMTs, power amplifiers, and other high-frequency high-power devices
2. MEMS Devices: Resonators and filters based on piezoelectric effects
3. Emerging Applications: Ferroelectric memory, acoustic devices, and other emerging application fields

References

The paper cites 27 relevant references covering key research works in III-nitride device technology, AlScN material characteristics, and MOCVD growth techniques, providing a solid theoretical foundation and technical reference for this research.

Overall Assessment: This is a high-quality materials science research paper that has achieved significant progress in MOCVD growth of AlScN thin films. Although there remains room for improvement in certain technical metrics, it provides valuable contributions to the development of III-nitride heterostructure device technology.