Possible high-Tc superconductivity at 45 K in the Ge-doped cluster Mott insulator GaNb4Se8

Basic Information

• Paper ID: 2510.12452
• Title: Possible high-Tc superconductivity at 45 K in the Ge-doped cluster Mott insulator GaNb4Se8
• Authors: Ji-Hai Yuan, Ya-Dong Gu, Yun-Qing Shi, Hao-Yu He, Qing-Song Liu, Jun-Kun Yi, Le-Wei Chen, Zheng-Xin Lin, Jia-Sheng Liu, Meng Wang, Zhi-An Ren
• Classification: cond-mat.supr-con, cond-mat.mtrl-sci
• Affiliated Institutions: Institute of Physics, Chinese Academy of Sciences; University of Chinese Academy of Sciences
• Paper Link: https://arxiv.org/abs/2510.12452

Abstract

Polycrystalline samples of Ge-doped GaNb4Se8 were synthesized via solid-state reaction. Zero-resistance transitions were observed in a batch of samples, with the highest superconducting onset Tc reaching 45 K. This discovery may demonstrate a new class of Nb-based high-temperature superconductors based on doped Mott insulators.

Research Background and Motivation

1. Historical Context: Since the discovery of 30 K superconductivity in Ba-doped La2CuO4 by Bednorz and Müller in 1986, carrier doping of strongly correlated electron systems (such as Mott insulators) has become an important pathway for discovering high-temperature superconductors.
2. Research Significance:
   • The discoveries of cuprate, iron-based, and nickel-based superconductors all follow the paradigm of doping strongly correlated electron systems
   • Exploration of new superconducting material systems is crucial for understanding the mechanisms of high-temperature superconductivity
3. Material Background:
   • GaNb4Se8 is a cluster compound with cubic spinel structure, belonging to the AM4X8 structural type
   • This material is a known non-magnetic Mott insulator that can transition to a superconducting state under high pressure (Tc = 2.9 K at 13 GPa)
   • No successful carrier doping studies have been reported previously
4. Research Motivation: Based on the research team's experience with Mo/Nb-based transition metal compound superconductors, an attempt was made to achieve superconducting transition in GaNb4Se8 through Ge doping.

Core Contributions

1. First Achievement: Zero-resistance transition observed in Ge-doped GaNb4Se8 with onset Tc as high as 45 K
2. New Material System: Possible discovery of a new class of Nb-based high-temperature superconductors
3. Doping Strategy: Demonstrated the feasibility of carrier doping through Ge substitution for Ga
4. Theoretical Significance: Provided new experimental evidence for superconductivity research based on cluster Mott insulators

Detailed Methodology

Material Synthesis

• Method: Solid-state reaction
• Raw Materials: High-purity (99.99%) Ga, Nb, Se, Ge
• Process Flow:
  1. Heating at 900°C for 72 hours
  2. Regrinding and pressing into pellets
  3. Reheating at 1000°C for 72 hours
• Protective Measures: All operations conducted in a high-purity Ar atmosphere glove box to prevent contamination

Characterization Methods

1. Structural Characterization: Powder X-ray diffraction (XRD) using Cu-Kα radiation
2. Electrical Measurements: Four-probe method for measuring resistance-temperature relationships
3. Magnetic Measurements: DC magnetization measurements

Technical Innovations

1. Doping Strategy: Employing excess Ge to compensate for volatile losses
2. Sample Preparation: Operation in inert atmosphere to ensure sample purity
3. Characterization Methods: Combined electrical and magnetic measurements to verify superconducting properties

Experimental Setup

Sample Preparation

• Nominal Composition: Ga0.9Ge0.2Nb4Se8
• Doping Strategy: Excess Ge addition to compensate for volatile losses
• Sample Characteristics: Black, relatively stable in air

Measurement Conditions

• Resistance Measurement: PPMS system, four-probe method, test current 1 mA
• Sample Dimensions: Length approximately 5 mm, cross-sectional area 1-2 mm²
• Magnetization Measurement: Applied magnetic field 100 Oe

Reference Samples

• Pure GaNb4Se8 as control
• Known superconductors such as W5Si3-xPx, KxMo6Se8, Ba(FeCo)2As2 as references

Experimental Results

Main Results

1. Superconducting Transition:
   • Sample #1: Onset Tc = 45 K, zero-resistance temperature approximately 34 K
   • Sample #2: Onset Tc = 40 K
   • Both samples achieved complete zero-resistance state
2. Resistance Behavior:
   • Anomalous resistance observed in the 60-80 K range, indicating another phase transition
   • Negative resistance phenomenon observed near 34 K in sample #1, attributed to superconducting percolation pathways
3. Stability Issues:
   • Superconducting signal disappeared after samples were stored in the glove box for several days
   • Suspected instability of Ge-doped samples with gradual decomposition to the parent compound

Structural and Magnetic Characterization

1. XRD Results:
   • Main phase is GaNb4Se8 with lattice constant nearly identical to undoped samples
   • NbSe2 phase and other minor impurities detected
2. Magnetization Behavior:
   • Magnetization behavior after superconducting signal disappearance is similar to pure GaNb4Se8
   • Confirms that samples reverted to the parent compound state

Reproducibility Issues

• Among hundreds of sample preparations, only one batch exhibited zero-resistance transition
• Electrical properties show inhomogeneity among different pellets within the same batch
• Indicates challenges in controllability and reproducibility of the doping process

Related Work

Mott Insulator Superconductivity Research

1. Cuprate Superconductors: La2CuO4, YBa2Cu3O7, HgBa2Ca2Cu3O8, etc.
2. Iron-Based Superconductors: LaFeAsO series, etc.
3. Nickel-Based Superconductors: Infinite-layer nickelates, etc.

GaNb4Se8-Related Research

1. Basic Properties: Cluster molecular orbitals, quadrupole ordering, structural phase transitions
2. High-Pressure Studies: Achievement of 2.9 K superconductivity at 13 GPa
3. Theoretical Studies: Valence bond solid state, Jahn-Teller effect, etc.

Related Work by the Research Team

Including discoveries of various Mo/Nb-based superconducting materials such as K2Mo3As3, Mo5GeB2, and Mo5Si3.

Conclusions and Discussion

Main Conclusions

1. High-temperature superconductivity at 45 K observed for the first time in Ge-doped GaNb4Se8
2. May represent a new class of Nb-based high-temperature superconductors based on cluster Mott insulators
3. Demonstrated the effectiveness of carrier doping strategy in this system

Limitations

1. Reproducibility Issues: Superconducting phenomenon observed in only one batch of samples
2. Stability Issues: Superconducting phase is unstable and prone to decomposition
3. Doping Control: Volatility of Ge makes precise control of doping concentration difficult
4. Phase Purity: Presence of impurity phases in samples affects determination of intrinsic superconducting properties

Future Research Directions

1. Improve synthesis procedures to enhance reproducibility and stability
2. Optimize doping strategies to achieve precise carrier concentration control
3. Conduct in-depth investigation of superconducting mechanisms and phase diagrams
4. Explore possibilities of other doping elements

In-Depth Evaluation

Strengths

1. Important Discovery: Observation of relatively high-temperature superconductivity in a new material system
2. Theoretical Significance: Provides new experimental evidence for Mott insulator superconductivity research
3. Technical Pathway: Validates the feasibility of carrier doping in cluster compounds
4. Data Quality: Clear resistance measurement data with unambiguous zero-resistance phenomenon

Weaknesses

1. Poor Reproducibility: Extremely low success rate with superconductivity observed in only one batch
2. Stability Issues: Unstable superconducting phase limits in-depth investigation
3. Unclear Mechanism: Lacks in-depth analysis of superconducting mechanisms
4. Insufficient Characterization: Missing critical superconducting characterization data such as magnetization and specific heat
5. Impurity Effects: Impurity phases in samples may compromise reliability of results

Impact

1. Academic Value: Provides new material platform for high-temperature superconductivity research
2. Technical Challenges: Reproducibility and stability issues must be resolved for practical applications
3. Inspirational Significance: May inspire superconductivity research on other cluster compounds

Applicable Scenarios

Currently primarily applicable to fundamental scientific research, particularly:

1. Strongly correlated electron system physics research
2. New superconducting material exploration
3. Mott insulator doping mechanism research

References

The paper cites 24 important references covering the history of high-temperature superconductor discoveries, fundamental research on GaNb4Se8, and related work by the research team, providing solid theoretical foundation and technical support for the research.

Overall Assessment: This is a scientifically significant discovery showing relatively high-temperature superconductivity in a new material system. However, reproducibility and stability issues limit its current scientific value, requiring further process optimization and in-depth research to verify and understand this phenomenon.