Origin of Enhanced Thermal Resistance Near Nanoscale Hotspots: Insights from Full-Dispersion-Resolved Phonon Transport in Silicon

Basic Information

• Paper ID: 2510.12530
• Title: Origin of Enhanced Thermal Resistance Near Nanoscale Hotspots: Insights from Full-Dispersion-Resolved Phonon Transport in Silicon
• Author: Jae Sik Jin (Department of Mechanical Design, Korea University of Science and Technology)
• Classification: cond-mat.mes-hall (Condensed Matter Physics - Mesoscopic and Nanoscale Physics)
• Publication Date: 2025
• Paper Link: https://arxiv.org/abs/2510.12530

Abstract

This study revisits the physical mechanisms of phonon transport near nanoscale hotspots by employing the Boltzmann Transport Equation (BTE) combined with a Full Phonon Dispersion Model (FPDM). The research reveals that the fundamental cause of enhanced thermal resistance near nanoscale hotspots is not, as traditionally believed, the inability of long mean-free-path (MFP) phonons to effectively identify hotspots. Rather, it stems from the low heat capacity of these long-MFP phonons and their lack of direct scattering with optical modes. When energy is supplied, these phonons rapidly increase in temperature, forming steep temperature gradients near hotspots and thereby enhancing thermal resistance.

Research Background and Motivation

Problem Definition

Phonon transport near nanoscale hotspots is a critical factor determining heat dissipation efficiency in advanced electronic devices. The conventional understanding attributes the enhanced thermal resistance observed near nanoscale hotspots (NHs) to long mean-free-path phonons, whose MFP far exceeds the hotspot dimensions, limiting their ability to identify hotspots and conduct heat effectively.

Research Significance

1. Practical Application Needs: In advanced electronic, optoelectronic, and quantum nanodevices, phonon transport near hotspots directly affects device performance and reliability
2. Theoretical Understanding Gaps: Existing theoretical predictions based on Fourier diffusion models show significant discrepancies with experimentally observed thermal resistance values
3. Heat Dissipation Optimization Requirements: Understanding nanoscale heat transport mechanisms is crucial for developing phonon engineering strategies

Limitations of Existing Methods

1. Simplified Assumptions: Traditional models primarily rely on polarization effects while neglecting complete phonon dispersion relationships
2. Lack of Mode Resolution: Existing research lacks precise analysis of contributions from different frequency phonon modes
3. Incomplete Scattering Mechanisms: Insufficient consideration of phonon-phonon interactions and non-equilibrium phonon distributions

Research Motivation

Based on findings by V. Chiloyan et al., showing that under non-thermal equilibrium conditions in 300K silicon, long-MFP phonons may actually produce higher heat conduction rates than predicted by Fourier analysis, there is a need to reconsider the traditional assumption that "reduced phonon scattering necessarily leads to enhanced thermal resistance."

Core Contributions

1. Revealing New Physical Mechanisms: Demonstrates that the true cause of enhanced thermal resistance near nanoscale hotspots is the low heat capacity of long-MFP phonons, rather than the long MFP itself
2. Establishing Complete Theoretical Framework: Employs BTE combined with FPDM, including longitudinal, transverse, and optical branches with intra- and inter-branch scattering analysis
3. Introducing New Analysis Parameters: Proposes the spectral parameter -∇T/λ to capture sensitivity differences of different phonon modes to non-local effects
4. Providing Quantitative Analysis: Quantifies spectral contributions through mode-resolved calculations of velocity, scattering processes, and non-equilibrium phonon distributions
5. Validating One-Dimensional Transport Assumption: Verifies the assumption of primarily x-axis phonon transport in silicon layers through multi-thickness comparisons

Methodology Details

Task Definition

Input: 10×10 nm² nanoscale hotspot with volumetric heat source qvol = 10¹⁸ W/m³ Output: Mode-resolved thermal resistance distribution, temperature gradients, and phonon transport characteristics Constraints: Silicon-on-insulator (SOI) transistor geometry with boundary scattering and three-phonon processes

Model Architecture

1. Boltzmann Transport Equation Framework

For steady-state BTE-FPDM of acoustic modes (AM):

$\hat{v}_g \cdot \nabla e_i = \frac{1}{4\pi} \sum_{j=1}^{N_{bands}} \Gamma_{ij} \left[ \int_{T_{ref}}^{T_{ij}} C_i dT + e_i^0 - e_i \right]$

For optical modes (OM):

$\frac{\partial e_o}{\partial t} = \sum_{j=1}^{N_{bands}} \Gamma_{oj} \left[ \int_{T_{ref}}^{T_{oj}} C_o dT + e_o^0 - e_o \right] + q_{vol}$

2. Spectral Heat Flux Calculation

Employing Majumdar's spectral heat flux model:

$q_x^{(i)} = \int_0^{\infty} v_g^{(i)} f_{Eq}^{(i)}(x,\omega) D(\omega) d\omega$

where: $f_{Eq}^{(i)}(x,\omega) = f_0^{(i)} + \left(\frac{df_0}{dT}\right) v_g^{(i)} \frac{\partial T}{\partial x}$

3. Interaction Temperature Definition

$T_{ij} = T_{ref} + \int_{T_{ref}}^T \frac{C_i + C_j}{C_i C_j} \frac{dC_j}{dT} dT$

Technical Innovations

1. Full Dispersion Resolution: Unlike previous work focusing primarily on polarization, this work simultaneously considers dispersion and polarization effects
2. Mode-Specific Analysis: Distinguishes different behaviors between low-frequency (LF) and high-frequency (HF) phonon modes
3. Heat Capacity Effect Identification: First explicitly identifies the critical role of modal heat capacity in non-local phonon transport
4. Multi-Scale Verification: Validates theoretical predictions through different silicon layer thicknesses (41 nm, 78 nm, 177 nm)

Experimental Setup

Computational Domain Configuration

• Geometric Structure: SOI transistor structure constructed based on experimental geometry from Goodson et al.
• Hotspot Size: 10×10 nm², fixed to capture non-equilibrium phonon dynamics under strong confinement
• Grid Resolution:
  • L=41nm: 130×64
  • L=78nm: 130×70
  • L=177nm: 130×76
• Angular Resolution: 6×6 within octant, convergence accuracy 0.1%

Physical Parameters

• Reference Temperature: Tref = 303 K
• Energy Distribution: qa = 20% (acoustic modes), 80% (optical modes)
• Frequency Bands: NLA = NTA = 6, Noptical = 1
• Boundary Conditions: Fully diffuse scattering (specular reflection parameter = 0)

Verification Methods

Temperature distribution accuracy verified through comparison with numerical results from Narumanchi et al., showing good agreement within error margins.

Experimental Results

Main Results

1. Thermal Resistance Ratio Analysis

Figure 3 shows thermal resistance ratios of qa=20% relative to qa=0%:

• Low-Frequency Modes (LA1, TA1-TA3): Thermal resistance increases sharply near hotspots
• High-Frequency Modes (LA4-LA6, TA4-TA6): Minimal thermal resistance changes
• Thickness Effect: Surface confinement of long-MFP phonons weakens with increasing silicon layer thickness

2. Temperature Gradient Distribution

Analysis via -∇T/λ parameter reveals:

• At qa=0%: LF modes show lower -∇T/λ at x*=0, increasing then decreasing with propagation distance
• At qa=20%: LF modes show significantly increased -∇T/λ at hotspots, then decaying with distance

3. One-Dimensional Transport Verification

Figure 4 validates the one-dimensional phonon transport assumption:

• Maximum temperature difference between top and bottom of silicon layer <1.6% (L=177nm, qa=0%)
• Confirms that despite enhanced local y-direction transport directly below the hotspot, overall transport remains primarily x-directional

Ablation Studies

Effects of Different qa Values

Figures 7-9 demonstrate effects of different qa values (0%, 5%, 10%, 15%, 20%) on LF modes:

• Trend Consistency: All LF modes show increased -∇T/λ and thermal resistance with increasing qa
• Decay Characteristics: Larger qa values result in faster distance decay
• Thickness Dependence: Thicker silicon layers exhibit more pronounced effects

Special Behavior of TA3

At L=177nm, TA3 exhibits unique trends:

• Coupling Mechanism: TA3 couples with strongly scattering OM through LA modes (LA3: 66.7%, LA4: 52.2%, LA6: 57.1%)
• Energy Transfer: Long-MFP LA3 (~187nm) and LA4 (~131nm) effectively transfer energy to TA3 in thick layers

Key Findings

1. Heat Capacity Dominant Effect: Low heat capacity causes LF phonons to rapidly increase temperature upon energy absorption, producing steep temperature gradients
2. Selective Scattering: Long-MFP phonons that do not directly scatter with optical modes are the primary cause of enhanced thermal resistance
3. Size Effects: Silicon layer thickness affects surface confinement strength, subsequently influencing long-MFP phonon transport efficiency

Related Work

Main Research Directions

1. Ballistic Transport Theory: Foundational ballistic transport theory established by Mahan & Claro, Minnich et al.
2. Phonon Engineering: Contributions to phonon engineering strategies by Vermeersch & Mingo, Xu et al.
3. Selective Excitation: Research on selective phonon excitation mechanisms caused by electron-phonon scattering

Advantages of This Work

1. Mechanistic Innovation: First to explicitly identify heat capacity rather than MFP as the key factor
2. Complete Methodology: Employs complete phonon dispersion model including all scattering processes
3. Quantitative Analysis: Provides mode-resolved quantitative results beyond qualitative descriptions

Conclusions and Discussion

Main Conclusions

1. Challenging Conventional Wisdom: The true cause of enhanced thermal resistance near nanoscale hotspots is the low heat capacity of long-MFP phonons, not the long MFP itself
2. Clear Physical Mechanism: Low heat capacity phonons rapidly increase in temperature upon energy absorption, producing steep temperature gradients near hotspots through scattering with other acoustic modes
3. Mode Dependence: LF and HF modes exhibit distinctly different behaviors, with LF modes dominating the thermal resistance enhancement effect

Limitations

1. Effective Equilibrium Assumption: Treating each phonon mode as equilibrium with modal temperature may oversimplify actual non-equilibrium dynamics
2. Geometric Constraints: Study limited to specific SOI structures; applicability to other geometries requires verification
3. Material Specificity: Conclusions primarily based on silicon; behavior in other semiconductor materials may differ

Future Directions

1. Multi-Material Verification: Extension to other semiconductor material systems
2. Non-Equilibrium Dynamics: Development of more accurate non-equilibrium phonon distribution models
3. Experimental Verification: Corresponding experimental measurements needed to validate theoretical predictions

In-Depth Evaluation

Strengths

1. Theoretical Breakthrough: Challenges long-standing domain assumptions and proposes new physical mechanisms
2. Rigorous Methodology: Employs complete BTE-FPDM framework considering all important scattering processes
3. In-Depth Analysis: Reveals specific contributions of different phonon modes through mode-resolved analysis
4. Sufficient Verification: Validates theoretical predictions through multiple thickness and parameter combinations

Weaknesses

1. Experimental Absence: Lacks direct experimental verification, relying primarily on numerical simulation
2. Model Simplification: Effective equilibrium assumption may underestimate complexity of non-equilibrium effects
3. Insufficient Sensitivity Analysis: Parameter sensitivity analysis for key parameters (e.g., scattering rates) could be more comprehensive

Impact

1. Academic Value: Provides new understanding framework for nanoscale heat transport theory
2. Application Prospects: Important guidance for thermal management design in nanoelectronic devices
3. Methodological Contribution: FPDM methodology generalizable to other nanoscale heat transport problems

Applicable Scenarios

1. Nanoelectronic Devices: SOI transistors, FinFETs, and other advanced device structures
2. Hotspot Management: Optimization of local hotspot heat dissipation in power devices
3. Phonon Engineering: Design of thermal management strategies based on phonon mode control

References

This paper cites 17 important references covering phonon transport theory, experimental methods, and numerical simulation, providing solid theoretical foundation for the research. Key references include Majumdar's spectral heat flux theory, BTE numerical methods by Narumanchi et al., and recent advances in nanoscale heat transport.

Overall Assessment: This is a high-quality paper with significant theoretical breakthroughs in the nanoscale heat transport field. Through rigorous theoretical analysis and numerical verification, the authors successfully challenge conventional wisdom and provide new physical insights for the field. Despite certain limitations in theoretical assumptions, its innovation and scientific value are substantial, with important implications for advancing nanodevice thermal management technology.