Chiral crystals offer an unique platform for controlling structural handedness through external stimuli. However, the ability to select between structural enantiomers remains challenging, both theoretically and experimentally. In this work, we demonstrate a two-step pathway for enantiomer selectivity in layered chiral NbOX$_2$ (X = Cl, Br, I) crystals based on photostriction-driven phase transitions. Ab-initio simulations reveal that optical excitation is capable of inducing a structural phase transition in NbOX$_2$ from the monoclinic ($C2$) ground state to the higher-symmetry ($C2/m$) structure. In the resulting transient high-symmetry state, an applied electric field breaks the residual inversion-symmetry degeneracy, selectively stabilizing one enantiomeric final state configuration over the other. Our results establish a combined optical-electrical control scheme for chiral materials, enabling reversible and non-contact enantiomer selection with potential applications in ultrafast switching, optoelectronics, and chiral information storage.
- Paper ID: 2510.12998
- Title: Photostriction-Driven Phase Transition in Layered Chiral NbOX2 Crystals: Electrical-Field-Controlled Enantiomer Selectivity
- Authors: Jorge Cardenas-Gamboa, Martin Gutierrez-Amigo, Aritz Leonardo, Gregory A. Fiete, Juan L. Mañes, Jeroen van den Brink, Claudia Felser, Maia G. Vergniory
- Classification: cond-mat.mtrl-sci (Condensed Matter Physics - Materials Science)
- Publication Date: October 16, 2025
- Paper Link: https://arxiv.org/abs/2510.12998
This study proposes a method for controlling enantiomer selectivity in layered chiral NbOX2 (X = Cl, Br, I) crystals based on photostriction-driven phase transitions. First-principles calculations reveal that photoexcitation induces a phase transition in NbOX2 from the monoclinic (C2) ground state to a higher-symmetry (C2/m) structure. In the transient high-symmetry state, an applied electric field breaks the residual inversion symmetry degeneracy, selectively stabilizing one enantiomeric configuration. This study establishes a combined photoelectric control scheme for chiral materials, achieving reversible, non-contact enantiomer selection with promising applications in ultrafast switching, optoelectronics, and chiral information storage.
- Core Challenge: While chiral crystals provide a unique platform for controlling structural chirality through external stimuli, achieving selective control between structural enantiomers remains theoretically and experimentally challenging.
- Significance: Chirality is a fundamental symmetry concept in physics, chemistry, and biology. Controlling structural chirality is crucial for phenomena including circular dichroism, chiral phonon transport, enantioselective catalysis, and chirality-induced spin selectivity.
- Existing Limitations: Traditional chiral control methods lack reversibility and non-contact operation, making precise enantiomer selection difficult.
- Research Motivation: NbOX2 materials possess unique chiral ground states, ferroelectricity, and excellent optoelectronic properties, providing an ideal platform for developing novel chiral control mechanisms.
- Proposed a two-step enantiomer selection mechanism: Photoexcitation-induced phase transition + electric field selective stabilization
- Revealed photostriction-driven chirality-to-achirality phase transition: Structural transformation from C2 to C2/m
- Established a combined photoelectric control scheme: Achieving reversible, non-contact chiral control
- Provided theoretical predictions: Calculated laser power densities required for phase transition (1.55-25.30 mJ/cm²)
- Verified enantiomer authenticity: Confirmed mirror-image relationships of left and right-handed structures through shift current response
Input: Layered chiral NbOX2 crystals
Output: Selectively stabilized specific chiral enantiomers
Constraints: Maintaining material's intrinsic properties while achieving reversible control
- Software: Quantum ESPRESSO (v7.3)
- Functional: PBE-GGA + DFT-D2 van der Waals correction
- Parameter Settings:
- Wavefunction cutoff energy: 50 Ry
- Charge density cutoff energy: 400 Ry
- k-point mesh: 8×8×5
- Convergence criterion: Atomic forces < 10⁻⁴ Ry/Bohr
Carrier excitation model employed to simulate laser irradiation:
ne=x⋅e−/u.c.
where x represents the fraction of valence band electrons transitioning to the conduction band.
ne=ℏωI0(1−R)αΩ0
where I0 is laser power density, R is reflectivity, and α is absorption coefficient.
- First Step: Photoexcitation softens the lattice, driving chirality-to-achirality phase transition
- Second Step: Electric field breaks mirror symmetry, selectively stabilizing the target enantiomer
Through systematic calculations of carrier concentration versus structural symmetry relationships, critical carrier densities were determined:
- NbOCl₂: 0.35 e⁻/f.u.
- NbOBr₂: 0.20 e⁻/f.u.
- NbOI₂: 0.15 e⁻/f.u.
Shift current response σabc(0;ω,−ω) was utilized as a chirality probe to verify the mirror-image relationship of enantiomers.
- Research Subject: NbOX₂ (X = Cl, Br, I) layered materials
- Structural Characteristics:
- Ground state: Monoclinic C2 space group (chiral)
- Excited state: Monoclinic C2/m space group (achiral)
- Interlayer interactions: van der Waals forces
- Phonon Calculations: DFPT method, 2×2×2 q-point mesh
- Polarization Calculations: Berry phase method
- Shift Current: Wannier interpolation method
- Reference State: Unexcited C2 ground state
- Target State: Electric field-selected left/right-handed enantiomers
- Intermediate State: Photoexcited C2/m achiral state
| Material | Critical Carrier Density | Absorption Coefficient | Reflectivity | Required Power Density |
|---|
| NbOCl₂ | 0.35 e⁻/f.u. | 4.11×10⁴ cm⁻¹ | 0.345 | 25.30 mJ/cm² |
| NbOBr₂ | 0.20 e⁻/f.u. | 6.45×10⁴ cm⁻¹ | 0.387 | 8.78 mJ/cm² |
| NbOI₂ | 0.15 e⁻/f.u. | 2.61×10⁵ cm⁻¹ | 0.450 | 1.55 mJ/cm² |
- Critical Electric Field Strength: ~0.52 kV/cm (approximately two orders of magnitude lower than intrinsic coercive field)
- Intrinsic Coercive Field: ~100 kV/cm
- Efficiency Enhancement: Electric field requirement reduced by approximately 100-fold
- Achiral state: Shift current equals zero
- Left/right-handed enantiomers: Shift current magnitudes equal with opposite signs
- Confirmed genuine mirror-symmetry relationships
Systematic variation of carrier concentration verified critical behavior of phase transition and continuity of symmetry evolution.
- Phonon Spectrum Calculations: C2 ground state is dynamically stable; C2/m state exhibits imaginary frequency modes (dynamically unstable)
- Energy Analysis: Confirmed the nature of C2/m state as a transient state
- Photostriction Materials: Photomechanical effects in ferroelectrics, multiferroic interfaces, and polar semiconductors
- Chiral Material Control: Theoretical and experimental studies on structural chirality modulation via external fields
- NbOX₂ Materials: Research on structure, electronic, and optical properties of layered ferroelectrics
- First to propose combined photoelectric chiral control mechanism
- Quantitatively predicted experimental parameters required for control
- Systematically investigated universal principles across the NbOX₂ family
- Successfully established a novel chiral control mechanism based on photostriction
- Achieved reversible, non-contact enantiomer selection
- Significantly reduced energy consumption for electric field control
- Provided new design concepts for chiral electronics and optoelectronic devices
- Theoretical predictions require experimental verification
- Excited state lifetime may affect practical operation window
- Temperature effects and defect impacts insufficiently considered
- Device integration engineering challenges
- Experimental verification of theoretically predicted phase transition behavior
- Material optimization to reduce laser power requirements
- Device design for practical applications
- Extended research to other chiral material systems
- Theoretical Innovation: Proposes a novel combined photoelectric chiral control mechanism
- Rigorous Calculations: Employs multiple first-principles methods for cross-validation
- Strong Systematicity: Encompasses the entire NbOX₂ material family
- Practical Value: Provides specific experimental parameter guidance
- Clear Physical Picture: Reasonable mechanism explanation and easy-to-understand physics
- Lacks Experimental Verification: Pure theoretical work requiring experimental support
- Insufficient Dynamics Analysis: Limited detailed investigation of phase transition timescales
- Limited Environmental Factor Consideration: Incomplete treatment of temperature, defects, and other practical factors
- Device Integration Challenges: Engineering difficulties in translating principles to applications
- Academic Contribution: Provides new perspectives for chiral material control
- Technological Value: May promote development of chiral electronics devices
- Interdisciplinary Significance: Bridges optics, electronics, and chiral physics
- Reproducibility: Detailed computational methods and parameter descriptions
- Basic Research: Chirality physics and phase transition mechanism studies
- Device Applications: Ultrafast switching, chiral storage, optoelectronic devices
- Material Design: Development of novel chiral functional materials
- Computational Materials Science: Application of first-principles methods in complex phase transitions
The paper cites 46 relevant references covering multiple fields including chiral materials, photostriction, ferroelectrics, and first-principles calculations, providing a solid theoretical foundation for the research.
Overall Assessment: This is a high-quality theoretical work proposing an innovative chiral control mechanism with rigorous computational methods and clear physical insights. Although lacking experimental verification, it provides important theoretical guidance and experimental directions for the field. This work is expected to advance applications of chiral materials in information technology, with significant scientific value and application prospects.