First-Principles Exploration of Pentagonal TiN$_8$ and MoN$_8$ Monolayers as New Magnetic Topological Insulator

Basic Information

• Paper ID: 2510.13107
• Title: First-Principles Exploration of Pentagonal TiN$_8$ and MoN$_8$ Monolayers as New Magnetic Topological Insulator
• Authors: Zheng Wang, Beichen Ruan, Zhuoheng Li, Shu-Shen Lyu, Kaixuan Chen
• Affiliation: School of Materials Science, Sun Yat-sen University Shenzhen Campus
• Classification: cond-mat.mtrl-sci, physics.comp-ph
• Publication Date: October 16, 2025
• Paper Link: https://arxiv.org/abs/2510.13107

Abstract

Discovering robust intrinsic magnetic topological materials exhibiting the quantum anomalous Hall (QAH) effect represents a central challenge in condensed matter physics and revolutionary electronic applications. However, progress has been hindered by the limited number of candidate materials, poor stability, and synthesis complexity. This work introduces a new research paradigm by exploring previously overlooked emerging magnetic properties and nontrivial band topology in two-dimensional pentagonal MN$_8$ monolayers. Through first-principles calculations, we reveal that these systems possess out-of-plane ferromagnetic ground states, a key characteristic driven by nontrivial topological properties originating from localized d-orbitals embedded in transition metals. TiN$_8$ is identified as a QAH insulator with Chern number $C=-1$, while more remarkably, MoN$_8$ is predicted to be a rare high Chern number QAH insulator with $C=2$.

Research Background and Motivation

Problem Definition

1. Core Challenge: Scarcity and practical limitations of quantum anomalous Hall (QAH) effect materials
2. Limitations of Existing Materials:
   • Experimentally realized 2D magnetic topological insulators such as Cr-doped (Bi,Sb)$_2$Te$_3$ thin films suffer from synthesis difficulties and poor stability
   • Limited number of candidate materials restricts practical applications

Research Significance

• The QAH effect provides a promising platform for low-power electronic devices and topological quantum computing
• Rapid development of 2D van der Waals materials offers pathways to overcome challenges faced by conventional magnetic topological insulators
• Pentagonal structure materials exhibit superior mechanical and electronic properties

Research Motivation

• Previous studies of penta-MN$_8$ structures focused only on lattice structure and general physical properties, neglecting the localized nature of transition metal d-orbitals
• Lack of systematic investigation into emerging magnetic and nontrivial band topology
• Need to expand the candidate material library for magnetic topological materials

Core Contributions

1. Discovery of New QAH Material Family: First prediction that the penta-MN$_8$ family exhibits intrinsic magnetic topological insulator properties
2. Identification of High Chern Number Topological Insulator: MoN$_8$ with rare high Chern number $C=2$
3. Elucidation of Magnetic Mechanism: Clarification of the out-of-plane ferromagnetic ground state formation mechanism driven by d-orbital localization
4. Establishment of Theoretical Framework: Construction of a simplified tight-binding model explaining the origin of topological properties
5. Extension of Material Design Space: Provision of theoretical foundation for next-generation spintronics and quantum computing device design

Methodology Details

Computational Methods

First-Principles Calculations:

• Density functional theory (DFT) calculations using VASP package
• Projector augmented wave (PAW) method for electron-ion interactions
• PBE functional for exchange-correlation potential
• Plane wave basis set cutoff energy: 600 eV
• k-point mesh: 11×11×1 Gamma-centered sampling

Key Technical Parameters:

• DFT+U method for d-orbital Coulomb interactions: U(Ti)=3.0 eV, U(Mo)=2.0 eV
• DFT-D3 method for van der Waals interaction correction
• Vacuum layer thickness: 15 Å

Topological Property Calculations

Wannier Function Method:

• Wannier90 and WannierTools packages
• Chern number calculation formula: $C = \frac{1}{2\pi}\sum_n \int_{BZ} d^2k \Omega_n$

Berry Curvature Calculation: $\Omega_n(k) = -\sum_{n'\neq n} \frac{2\text{Im}\langle\psi_{nk}|v_x|\psi_{n'k}\rangle\langle\psi_{n'k}|v_y|\psi_{nk}\rangle}{(\varepsilon_{n'}-\varepsilon_n)^2}$

Magnetic Analysis

Heisenberg Model: $H = H_0 - \sum_{\langle i,j\rangle} J_1 S_i \cdot S_j - \sum_{\langle\langle i,j\rangle\rangle} J_2 S_i \cdot S_j - \sum_i A S_i^2$

where $J_1$ and $J_2$ are nearest-neighbor and next-nearest-neighbor exchange interaction parameters, respectively, and $A$ is the magnetic anisotropy energy.

Experimental Setup

Structural Models

• TiN$_8$: γ-phase structure, planar geometry, space group P6/m, lattice constant a=5.47 Å
• MoN$_8$: β-phase structure, corrugated morphology, space group P3, lattice constant a=5.28 Å
• Each unit cell contains one transition metal atom and eight nitrogen atoms (six N1 sites + two N2 sites)

Stability Verification

• Phonon Dispersion Calculation: Density functional perturbation theory (DFPT)
• Molecular Dynamics Simulation: AIMD simulation for thermal stability verification
• Magnetic Ground State Determination: Comparison of FM, AFM-stripe, and AFM-zigzag configurations

Evaluation Metrics

• Band structure and band gap size
• Chern number and topological edge states
• Magnetic exchange parameters and Curie temperature
• Structural stability (phonon frequencies, AIMD)

Experimental Results

Structure and Stability

• TiN$_8$: Shows thermal stability at 300 K with no imaginary phonon frequencies
• MoN$_8$: Difficult to maintain structural integrity at 50 K (within 3 ps), but topological properties warrant investigation

Electronic Structure and Magnetism

Magnetic Moment Distribution:

• TiN$_8$: 1.92 μ$_B$/unit cell, electronic configuration 3d$^2$↑
• MoN$_8$: 2.00 μ$_B$/unit cell, electronic configuration 3d$^3$↑d$^1$↓

Bonding Properties:

• Bader charge analysis reveals significant covalent character in Ti-N and Mo-N bonds
• Electron localization function (ELF) confirms strong covalent bonding between metal and nitrogen atoms

Magnetic Exchange Interactions

Topological Properties

TiN$_8$ Topological Characteristics:

• Chern number: $C = -1$
• SOC gap: 1020 meV at K point, 932 meV at Γ point
• Global gap: 223 meV (indirect)
• Chiral edge states connecting Fermi level

MoN$_8$ Topological Characteristics:

• Chern number: $C = 2$ (high Chern number)
• SOC gap: 41 meV at K point, 63 meV at Γ point
• Global gap: 12 meV
• Two co-directional chiral edge states crossing Fermi level

Tight-Binding Model Verification

A simplified two-band model based on $(d_{xz}, d_{yz})$ orbitals was constructed:

• K point: Linear dispersion, Chern number contribution $C = -1/2$
• Γ point: Parabolic dispersion, Chern number contribution $C = 1$
• Model successfully explains topological features from first-principles calculations

Related Work

Progress in Topological Insulator Research

• Conventional 3D topological insulators: Bi$_2$Se$_3$, Bi$_2$Te$_3$, etc.
• Theoretical predictions and experimental realization of 2D Chern insulators and QAH effect
• Rarity of high Chern number topological insulators

Pentagonal 2D Materials

• Theoretical predictions and experimental synthesis of penta-graphene, penta-MX$_2$, etc.
• Discovery of N$_{18}$ macrocycles provides foundation for penta-MN$_8$ structure
• Previous studies overlooked magnetic and topological properties

Magnetic Topological Materials

• Rapid development of van der Waals magnetic materials
• Topological properties of MnBi$_2$Te$_4$ family materials
• Coupling mechanisms between magnetic and topological properties in 2D materials

Conclusions and Discussion

Main Conclusions

1. New Material Family: The penta-MN$_8$ family provides a new material platform for magnetic topological insulators
2. Topological Diversity: TiN$_8$ (C=-1) and MoN$_8$ (C=2) exhibit rich topological phases
3. Physical Mechanism: d-orbital localization and spin polarization are key driving forces for topological properties
4. Theoretical Framework: Tight-binding model reveals different contributions of Γ and K points to Chern number

Limitations

1. Structural Stability: Poor thermal stability of MoN$_8$ limits practical applications
2. Synthesis Challenges: Requires high temperature and pressure conditions; experimental synthesis remains to be verified
3. Parameter Dependence: Topological properties are sensitive to Hubbard U parameter
4. Band Gap Size: Small band gap of MoN$_8$ (12 meV) may affect room-temperature applications

Future Directions

1. Material Optimization: Enhance structural stability through strain, doping, etc.
2. Experimental Verification: Explore synthesis pathways and characterize topological properties
3. Device Applications: Design spintronics devices based on QAH effect
4. Theoretical Extension: Investigate penta-MN$_8$ compounds of other transition metals

In-Depth Evaluation

Strengths

1. High Innovation: First systematic study of magnetic topological properties of penta-MN$_8$, discovery of high Chern number materials
2. Comprehensive Methodology: Combines first-principles calculations, tight-binding models, and Monte Carlo simulations
3. Deep Physical Insights: Clear elucidation of correlation mechanisms between d-orbitals, magnetism, and topological properties
4. Theoretical Rigor: Standard Berry curvature and Chern number calculation methods; credible results

Weaknesses

1. Practical Limitations: Poor stability of MoN$_8$; TiN$_8$ requires large U values to show AFM ground state
2. Experimental Absence: Pure theoretical study lacking experimental verification and synthesis feasibility analysis
3. Parameter Sensitivity: Strong dependence on DFT+U parameter selection
4. Application Prospects: Small band gap and stability issues may limit practical device applications

Impact

1. Academic Contribution: Significantly expands candidate material library for magnetic topological insulators
2. Theoretical Value: Provides new perspective for understanding magnetic-topological coupling in 2D materials
3. Application Potential: Provides theoretical guidance for quantum computing and spintronics device design
4. Reproducibility: Detailed computational methods and clear parameters facilitate verification by other research groups

Applicable Scenarios

1. Basic Research: Theoretical research in topological physics and magnetic materials
2. Material Design: Computational screening of novel 2D magnetic topological materials
3. Device Concepts: Conceptual design and optimization of QAH effect devices
4. Teaching Examples: Typical cases for first-principles calculations and topological property analysis

References

This paper cites 40 relevant references covering key areas including topological insulator theory, 2D materials, magnetic interactions, and computational methodology, providing a solid theoretical foundation for the research.

Overall Assessment: This is a high-quality theoretical research paper making important contributions to the field of 2D magnetic topological materials. While challenges exist regarding experimental feasibility, its theoretical innovation and contribution to field development are noteworthy.