Magnetically controllable nonlinear valley Hall effect in centrosymmetric ferromagnets

Basic Information

• Paper ID: 2510.13457
• Title: Magnetically controllable nonlinear valley Hall effect in centrosymmetric ferromagnets
• Authors: Ruijing Fang, Jie Zhang, Zhichao Zhou, Xiao Li (Nanjing Normal University)
• Classification: cond-mat.mes-hall, cond-mat.mtrl-sci
• Publication Date: October 15, 2024 (arXiv preprint)
• Paper Link: https://arxiv.org/abs/2510.13457

Abstract

The valley Hall effect serves as the foundation of valleytronics, offering promising pathways for advancing information technology. Traditional valley Hall effects require breaking inversion symmetry, while the recently proposed nonlinear valley Hall (NVH) effect eliminates symmetry constraints, broadening material selection. However, existing research is limited to non-magnetic materials without spin participation and relies on external strain to break rotational symmetry. To address these limitations, this work designs magnetically controllable NVH effects in centrosymmetric ferromagnets through tight-binding models and first-principles calculations. Model calculations demonstrate that nonzero NVH conductivity can emerge in the pristine hexagonal lattice without external strain, with its magnitude, sign, and spin polarization all dependent on magnetization direction. This effect generates valley Hall currents with various spin polarizations, exhibiting different current directions and spin polarization combinations. First-principles calculations on ferromagnetic VSi₂N₄ bilayers confirm observable NVH conductivity and its magnetization dependence.

Research Background and Motivation

Problem Background

1. Limitations of traditional valley Hall effects: Linear valley Hall effects require breaking crystal inversion symmetry, excluding numerous centrosymmetric materials from valleytronics applications.
2. Limitations of existing NVH effects:
   • Restricted to non-magnetic materials, lacking spin degree of freedom participation
   • Dependent on external strain to break rotational symmetry, suffering from low strain transfer efficiency and non-uniform distribution
   • Limited precision and reproducibility
3. Research needs: Development of new mechanisms that effectively introduce spin and provide enhanced controllability, enabling synergistic manipulation of multiple electronic degrees of freedom.

Research Motivation

This work aims to overcome the deficiencies of spin degree of freedom absence and external strain dependence in existing NVH effect research, by introducing ferromagnetic order to simultaneously achieve:

• Breaking time-reversal symmetry and introducing spin polarization
• Breaking crystal rotational symmetry through spin-orbit coupling
• Realizing magnetically controllable valleytronic effects

Core Contributions

1. Proposal of magnetically controlled NVH effect: First realization of nonlinear valley Hall effect in centrosymmetric ferromagnets without external strain
2. Theoretical model construction: Establishment of a three-orbital tight-binding model incorporating spin-orbit coupling and ferromagnetic exchange interactions
3. Multi-dimensional tunability: Control of NVH conductivity magnitude, sign, and spin polarization direction through magnetization orientation
4. Material verification: Validation of theoretical predictions in VSi₂N₄ bilayers, confirming observable NVH conductivity
5. Device application prospects: Provision of a platform for designing novel spintronic and valleytronic devices based on valley and spin degree of freedom manipulation

Detailed Methodology

Task Definition

Investigation of nonlinear valley Hall effects in centrosymmetric ferromagnets, where:

• Input: In-plane electric fields E_b, E_c
• Output: Transverse valley Hall current J^NVH_a = J^v1_a - J^v2_a ∝ E_b E_c
• Constraints: Maintenance of centrosymmetry, control through magnetization direction

Theoretical Framework

1. Tight-Binding Model

Construction of a centrosymmetric ferromagnetic model with space group P3̄m1, containing:

• Three d-orbitals: d_z², d_xz, d_yz
• On-site spin-orbit coupling
• Ferromagnetic exchange interactions with tunable magnetization direction

2. NVH Conductivity Calculation

Based on intrinsic contributions from Berry connection polarizability (BCP):

$\chi^{NVH}_{abc} = e^3 \int_{BZ} \tau \frac{dk}{(2\pi)^2} \Lambda_{abc}(k)$

where: $\Lambda_{abc}(k) = \sum_n \lambda^n_{abc}(k) \frac{\partial f(\varepsilon_{nk})}{\partial \varepsilon_{nk}}$

$\lambda^n_{abc}(k) = v^n_a G^n_{bc}(k) - v^n_b G^n_{ac}(k)$

3. Berry Connection Polarizability

$G^n_{ab}(k) = 2Re \sum_{m \neq n} \frac{A^{nm}_a(k) A^{mn}_b(k)}{\varepsilon_{nk} - \varepsilon_{mk}}$

$A^{nm}_a(k) = \frac{i\hbar \langle u_{nk}|\hat{v}_a|u_{mk}\rangle}{\varepsilon_{mk} - \varepsilon_{nk}}$

Technical Innovations

1. Symmetry analysis:
   • Utilization of P symmetry to ensure K± valley energy degeneracy
   • Breaking of C₃ symmetry through in-plane magnetization components
   • C₂ₓ and Mₓ symmetries determine nonzero NVH conductivity components
2. Magnetization control mechanism:
   • Magnetization direction parameterized by azimuthal angle φ and tilt angle θ
   • χ^NVH_xyy and χ^NVH_yxx follow cosine and sine functional dependencies respectively
   • Independent control of conductivity magnitude, sign, and spin polarization
3. Spin polarization characteristics:
   • Different magnetization directions produce different spin polarization combinations
   • Spin direction period of 2π, conductivity period of π
   • Achievement of multiple modes with spin parallel and perpendicular to current

Experimental Setup

Computational Methods

1. Tight-binding calculations: Using MagneticTB software package for model construction
2. First-principles calculations: Based on density functional theory
3. Wannier functions: Wannier90 software package for tight-binding Hamiltonian generation

Material Systems

• Model material: Hexagonal lattice ferromagnet with space group P3̄m1
• Actual material: AA' stacked VSi₂N₄ bilayers
  • Lattice constant: 2.89 Å
  • Monolayer thickness: 6.87 Å
  • Interlayer spacing: 2.80 Å
  • Magnetic moment: 2 μ_B/unit cell

Parameter Settings

• Chemical potential μ scan range: Near conduction and valence band edges
• Magnetization angles: φ ∈ 0, π, θ ∈ -π/2, π/2
• Energy window: Focus on nonlinear response in small band gap regions

Experimental Results

Main Results

1. Tight-Binding Model Results

• Conductivity characteristics: χ^NVH_xyy exhibits bipolar peaks, χ^NVH_yxx remains zero (for Mx-direction magnetization)
• Peak positions: Correspond to small band gap energies between K± valley conduction bands
• Magnitude: ~1 (e³/ℏ)Å eV⁻¹

2. VSi₂N₄ Bilayer Results

• Conductivity magnitude:
  • Conduction band: ~10¹ (e³/ℏ)Å eV⁻¹
  • Valence band: ~10² (e³/ℏ)Å eV⁻¹
• Exceeding existing research: Values surpass nonlinear Hall conductivity of strained graphene and CuMnAs thin films

3. Magnetization Direction Dependence

• In-plane rotation: χ^NVH_xyy ~ -cos(2φ), χ^NVH_yxx ~ sin(2φ)
• Out-of-plane tilt: χ^NVH_xyy even symmetric about θ=0, χ^NVH_yxx odd symmetric
• Peak angle: Maximum response at θ = 11°

Symmetry Analysis Verification

1. Momentum-resolved BCP: Λ_xyy(k) most significant near K± valleys
2. Symmetry protection: C₂ₓ symmetry ensures Λ_xyy symmetry about q_y=0
3. Valley contribution: P and Mₓ symmetries ensure opposite-sign contributions from two valleys

Spin Polarization Modes

Through magnetization direction control, achieving:

• Same current direction with opposite spin polarization
• Opposite current directions with perpendicular spin polarization
• Multiple spin-current combination modes

Related Work

NVH Effect Research

1. Theoretical proposals: Das et al. and Zhou et al. proposed NVH effects in strained graphene and MoS₂ bilayers respectively
2. Symmetry requirements: Require breaking three-fold rotational symmetry but not restricted by inversion symmetry
3. Innovation in this work: First introduction of magnetism and spin degrees of freedom

Magnetic Valley Materials

1. Spin-valley coupling: Realized in hundreds of magnetic valley materials
2. Valley splitting effects: Valley energy level splitting induced by magnetic order
3. Anomalous valley Hall effect: Linear magnetic valley Hall effects

Nonlinear Transport

1. Nonlinear Hall effects: Studied in time-reversal symmetry breaking systems
2. Berry curvature dipole: Microscopic mechanism of nonlinear response
3. Experimental observations: Realized in various materials

Conclusions and Discussion

Main Conclusions

1. Principle verification: Successful realization of strain-free NVH effect in centrosymmetric ferromagnets
2. Magnetic control characteristics: Magnetization direction effectively controls conductivity magnitude, sign, and spin polarization
3. Material realization: VSi₂N₄ bilayers exhibit observable NVH response
4. Device potential: Provides new platform for spin-valley electronic devices

Physical Mechanism

1. Symmetry breaking: In-plane magnetization breaks C₃ symmetry, activating NVH effect
2. Spin-orbit coupling: Produces small band gap, enhancing nonlinear response
3. Berry geometry: Berry connection polarizability determines transport properties

Limitations

1. Material constraints: Requires materials with specific space groups and magnetic structures
2. Temperature effects: Finite temperature effects on magnetic order and transport not considered
3. Disorder effects: Theoretical calculations based on perfect crystals; defect effects in actual materials not assessed

Future Directions

1. Material exploration: Search for more magnetic valley materials with similar properties
2. Experimental verification: Verification of theoretical predictions through non-local resistance measurements and other techniques
3. Device design: Development of spin-valley electronic devices based on magnetically controlled NVH effects
4. Multilayer systems: Extension to more complex multilayer and heterostructure systems

In-Depth Evaluation

Strengths

1. Theoretical innovation: First introduction of magnetism into NVH effects, enabling spin degree of freedom participation
2. Complete methodology: Combination of tight-binding models and first-principles calculations, integrating theory with actual materials
3. Clear physical picture: Deep understanding of NVH effect microscopic mechanisms through symmetry analysis
4. Application prospects: Opens new directions in the cross-disciplinary field of valleytronics and spintronics

Technical Highlights

1. Strain-free realization: Avoidance of external strain technical challenges through intrinsic magnetism
2. Multi-dimensional control: Simultaneous control of multiple dimensions of conductivity and spin polarization
3. Observable numerical values: Calculated conductivity values possess experimental measurability
4. Material verification: Reliability of theoretical predictions confirmed in actual materials

Shortcomings

1. Material scope: Currently verified only in specific material systems; universality requires extension
2. Experimental absence: Pure theoretical work lacking experimental verification
3. Environmental factors: Insufficient consideration of temperature, doping, and other practical factors
4. Device implementation: Path from fundamental effects to practical devices not sufficiently clear

Impact Assessment

1. Academic value: Important contribution to nonlinear valley transport theory, advancing related field development
2. Technical potential: Provides theoretical foundation for next-generation spin-valley electronic devices
3. Cross-disciplinary significance: Connects multiple fields including condensed matter physics, materials science, and device engineering

Applicable Scenarios

1. Basic research: Fundamental physics research in valleytronics and spintronics
2. Material design: Guidance for theoretical design of novel magnetic valley materials
3. Device development: Concept verification for low-power, multifunctional electronic devices
4. Information technology: Novel information processing schemes based on valley and spin encoding

References

This paper cites 40 important references covering multiple aspects including fundamental valleytronics theory, nonlinear transport phenomena, magnetic materials, and first-principles calculation methods, providing solid theoretical foundation and technical support for the research.

This paper demonstrates significant theoretical innovation, opening new pathways for applications of centrosymmetric magnetic materials in valleytronics, and is expected to advance development of the emerging interdisciplinary field of spin-valley electronics.