High Bandwidth and Ultra-low Dark Current Ge Photodetector Enabled by Frequency Domain Equalization

Basic Information

• Paper ID: 2510.13478
• Title: High Bandwidth and Ultra-low Dark Current Ge Photodetector Enabled by Frequency Domain Equalization
• Authors: Wenxin Deng, Hengsong Yue, Xiaoyan Liu, Jianhong Liang, Jianbin Fu, Shilong Pan, Tao Chu
• Classification: physics.optics
• Affiliated Institutions: College of Information and Electronic Engineering, Zhejiang University; State Key Laboratory of Extreme Photonics and Instrumentation; State Key Laboratory of Microwave Photonics, Nanjing University of Aeronautics and Astronautics
• Paper Link: https://arxiv.org/abs/2510.13478

Abstract

This paper proposes a frequency domain equalization-based germanium (Ge) photodetector that achieves performance enhancement by subtracting the frequency response of a low-bandwidth photodetector (PDB) from that of a high-bandwidth photodetector (PDA). Since PDB exhibits more severe attenuation at high frequencies compared to PDA, the differential response achieves higher values at high frequencies than at low frequencies. Experimental results demonstrate that the equalized photodetector (EqPD) achieves bandwidth exceeding 110 GHz with dark current reduced to 1 pA, enabling 100 Gbaud non-return-to-zero (NRZ) transmission without digital signal processing.

Research Background and Motivation

Problem Definition

1. Bandwidth Limitation: The bandwidth of Ge photodetectors is primarily constrained by two factors: carrier transit time and parasitic parameters (RC). Carrier transport from the intrinsic region to the doped region requires time related to the P-N junction intrinsic region length; parasitic parameters primarily include silicon resistance and junction capacitance.
2. Dark Current Issue: Thermal generation of carriers within the Ge P-N junction results in intrinsic dark current, typically in the nA-μA range, composed of diffusion current, generation-recombination current, band-to-band tunneling current, and trap-assisted tunneling current.

Research Significance

The enormous demands of artificial intelligence and cloud computing for data processing present major challenges for data communications. Silicon photonics, with its CMOS-compatible manufacturing processes, high integration density, low power consumption, and low cost, offers a promising solution to address this challenge.

Limitations of Existing Approaches

• Intrinsic Region Narrowing: While achieving bandwidth up to 265 GHz, dark current remains around 200 nA, and fabricating 100 nm narrow intrinsic regions is extremely challenging
• RC Parameter Optimization: Optimization through adjusting Ge region size and silicon doping is still limited by carrier transit time
• Inductor-based Methods: Utilizing inductors to reduce junction capacitance effects, but facing manufacturing complexity and parameter matching difficulties

Core Contributions

1. Proposed an innovative equalized photodetector (EqPD) architecture: Achieving frequency domain equalization through differential structure, breaking through conventional bandwidth limitations
2. Achieved the highest performance metrics for vertical Ge photodetectors: Bandwidth exceeding 110 GHz with dark current as low as 1 pA
3. Verified 100 Gbaud NRZ transmission capability: Enabling high-speed data transmission without digital signal processing
4. Provided theoretical analysis and experimental validation: Establishing comprehensive equivalent circuit models and transfer function analysis

Methodology Details

Device Architecture Design

The EqPD consists of two differential photodetectors:

• PDA: Smaller Ge region with lower capacitance and higher bandwidth
• PDB: Larger Ge region with higher capacitance and lower bandwidth
• Common Electrode: Connecting N++Ge of PDA and P++Si of PDB with opposite doping polarity, enabling current subtraction
• Thermally Tunable MZI: Controlling optical power distribution ratio between the two Ge regions

Theoretical Model

Transfer Function

The transfer function of EqPD is:

H_Eq(f) = H_t(f)[(1-m)H_a(f) - mH_b(f)]

where:

• m: fraction of incident optical power allocated to PDB
• H_t(f): carrier-controlled transfer function
• H_a(f), H_b(f): RC parasitic parameter-controlled transfer functions of PDA and PDB

Carrier Transfer Function

H_t(f) = 1/(1 + 2πjfR_tC_t)

RC Transfer Function

H_i(f) = X_j/[(1 + 2πjfC_p R_load)(X_i + X_j) + 2πjfC_i R_load X_j + X_i + X_j]

Dark Current Suppression Mechanism

Dark current consists of four components:

1. Diffusion Current: I_Diff = (qD_n n_p^0)/L_n + (qD_p p_n^0)/L_p × e^(qV_d/KT) - 1
2. Generation-Recombination Current: I_GR = (Aqd_i n_i)/(2τ) × e^(qV_d/2KT) - 1
3. Band-to-Band Tunneling Current: I_BBT
4. Trap-Assisted Tunneling Current: I_TAT

By applying different bias voltages to PDA and PDB, their dark currents can be mutually canceled, achieving ultra-low dark current.

Experimental Setup

Device Fabrication

• Substrate: SOI wafer with 220 nm thick silicon top layer and 2 μm thick buried oxide layer
• Ge Layer: 500 nm epitaxially grown with top 50 nm heavily doped to N++ concentration
• Doping Concentration: P++Si approximately 10^20 cm^-3, P+Si approximately 10^19 cm^-3
• Device Dimensions: PDA 8×6 μm, PDB 17×6 μm

Testing Configuration

• Small-Signal Characteristics: Using vector network analyzer (Keysight N5245B) and 110 GHz photonic component analyzer
• Eye Diagram Testing: Complete link including laser, polarization controller, MZ modulator, EDFA amplifier
• Dark Current Testing: Using voltage source (Keysight B2901A)

Experimental Results

Primary Performance Metrics

Bandwidth Performance

• Without Equalization (m=0): 3-dB bandwidth only 17 GHz
• After Equalization Optimization:
  • m=0.1: 25 GHz
  • m=0.2: 33 GHz
  • m=0.3: 55 GHz
  • m=0.35: 65 GHz
  • m=0.4: 73 GHz
  • m=0.45: >110 GHz (RF response loss only -0.53 dB)

Dark Current Suppression

• Conventional Single PD: 2.5 nA (at VB=-1V)
• Optimized EqPD: 1 pA (three orders of magnitude reduction)
• Suppression Performance at Different Bias Voltages:
  • VB=0V: Reduced from 156 pA to 3 pA
  • VB=-1V: Reduced from 2.5 nA to 1 pA
  • VB=-2V: Reduced from 3.5 nA to 20 pA (175-fold reduction)

High-Speed Transmission Capability

• 100 Gbaud NRZ Transmission: Clear eye diagram achievable without DSP
• Transmission Speed at Different m Values:
  • m=0.2: 70 Gbaud
  • m=0.35: 90 Gbaud
  • m=0.4: 100 Gbaud

Performance Comparison

Comparison with existing technologies demonstrates that this work achieves for the first time in vertical Ge photodetectors:

• Highest Bandwidth: >110 GHz
• Lowest Dark Current: 1 pA
• Best Comprehensive Performance: Simultaneously achieving ultra-high bandwidth and ultra-low dark current

Ablation Studies

Impact of Optical Power Distribution Ratio m

Systematic investigation of performance variation with different m values:

1. Bandwidth vs. Responsivity Trade-off: Bandwidth improves but responsivity decreases with increasing m
2. Optimal Operating Point: Best bandwidth performance achieved at m=0.45
3. Physical Constraints: m should be less than 0.5, otherwise equalization performance degrades

Bias Voltage Optimization

Precise control of bias voltages for PDA and PDB enables accurate dark current cancellation, validating theoretical predictions.

Related Work

Main Research Directions

1. Intrinsic Region Narrowing: Enhancing bandwidth by reducing carrier transit time
2. RC Parameter Optimization: Adjusting device geometry and doping concentration
3. Inductive Compensation: Utilizing inductors to offset capacitive effects
4. Novel Structures: Such as fin structures, ring structures, etc.

Uniqueness of This Work

• First to Propose Frequency Domain Equalization Concept: Achieving bandwidth extension through differential structure
• Transcending Physical Limitations: Surpassing carrier transit time and RC constraints
• Simple Manufacturing Process: No complex nanoscale fabrication required
• Strong Generalizability: Applicable to various types of photodetectors

Conclusions and Discussion

Main Conclusions

1. Technical Breakthrough: First achievement of >110 GHz bandwidth in vertical Ge photodetectors
2. Dark Current Suppression: Achieving 1 pA ultra-low dark current, three orders of magnitude lower than conventional structures
3. Practical Value: 100 Gbaud NRZ transmission verification demonstrates real-world application potential
4. Theoretical Contribution: Establishing comprehensive frequency domain equalization theoretical framework

Limitations

1. Responsivity Trade-off: Bandwidth improvement comes at the cost of reduced responsivity
2. Increased Complexity: Requiring precise optical power distribution and bias voltage control
3. Temperature Sensitivity: MZI thermal tuning may be affected by temperature variations
4. Manufacturing Tolerance: High consistency requirements between the two PDs

Future Directions

1. Further Bandwidth Enhancement: Through reducing PDA area and optimizing doping concentration
2. Responsivity Optimization: Exploring new equalization strategies to minimize responsivity loss
3. Integration: Monolithic integration with other silicon photonic devices
4. Application Extension: Applications in coherent communications, sensing, and other fields

In-Depth Evaluation

Strengths

1. Outstanding Innovation: First proposal of frequency domain equalization concept, opening new design paradigms for photodetectors
2. Excellent Performance: Achieving significant breakthroughs in key metrics, reaching state-of-the-art levels
3. Complete Theory: Establishing comprehensive theoretical models and equivalent circuit analysis
4. Comprehensive Experiments: Full-scale experimental design from device characteristics to system-level validation
5. High Practical Value: Directly applicable to next-generation high-speed optical communication systems

Weaknesses

1. Trade-off Relationships: Bandwidth-responsivity trade-off requires further optimization
2. Increased Complexity: System complexity increased compared to single PD
3. Long-term Stability: Lacking long-term reliability and temperature stability testing
4. Cost Analysis: Missing detailed manufacturing cost comparison

Impact

1. Academic Value: Providing new theoretical framework for high-speed photodetector design
2. Industrial Significance: Directly applicable to data center and 5G/6G communication systems
3. Technology Promotion: Equalization principles extensible to other types of photonic devices
4. Standards Development: Potentially influencing future high-speed photodetector performance standards

Application Scenarios

1. High-Speed Optical Communications: 100G/400G/800G optical modules
2. Data Center Interconnects: Short-distance high-speed optical links
3. 5G/6G Fronthaul/Backhaul: Wireless communication infrastructure
4. Optical Computing: Photonic-electronic integrated computing chips
5. LiDAR: High-speed ranging and imaging applications

References

The paper cites 28 important references covering the latest advances in silicon photonics, photodetector design, and high-speed optical communications, providing solid theoretical foundation and technical comparison for this work.

Overall Assessment: This is an excellent paper with significant breakthrough implications in the photodetector field. The authors' proposed frequency domain equalization concept is novel and unique, with impressive experimental results and thorough theoretical analysis. This work not only achieves significant technical breakthroughs but more importantly provides entirely new design paradigms for the field, possessing important academic value and practical significance.