Comparative study of phonon-limited carrier transport in the Weyl semimetal TaAs family

Basic Information

• Paper ID: 2510.14048
• Title: Comparative study of phonon-limited carrier transport in the Weyl semimetal TaAs family
• Authors: Shashi B. Mishra, Zhe Liu, Sabyasachi Tiwari, Feliciano Giustino, Elena R. Margine
• Classification: cond-mat.mes-hall, cond-mat.mtrl-sci
• Publication Date: October 15, 2025
• Paper Link: https://arxiv.org/abs/2510.14048

Abstract

This paper employs first-principles ab initio Boltzmann transport equations to systematically investigate phonon-limited transport characteristics in the TaAs family of Weyl semimetals. The calculated conductivity shows excellent agreement with experimental data from high-quality samples, confirming that transport in these systems is primarily limited by phonon scattering. Among the four compounds studied, NbP exhibits the highest conductivity, primarily dominated by its large Fermi velocity, which compensates for stronger scattering rates. In contrast, TaAs displays the lowest conductivity, associated with reduced carrier pockets and limited carrier velocity. Furthermore, NbP's conductivity is essentially insensitive to small electron or hole doping, while TaAs exhibits pronounced electron-hole asymmetry.

Research Background and Motivation

Problem Definition

The TaAs family of monopnictides represents the first material system where Weyl fermions were both theoretically predicted and experimentally observed. These compounds possess body-centered tetragonal non-centrosymmetric structures that, due to the absence of inversion symmetry and the presence of spin-orbit coupling (SOC), generate topologically protected Weyl nodes, leading to anomalous physical responses such as chiral anomaly, giant magnetoresistance, and ultrahigh carrier mobility.

Research Significance

1. Fundamental Physics: Understanding electron-phonon interaction mechanisms in Weyl semimetals is crucial for exploring topological quantum phenomena
2. Application Prospects: These materials hold broad potential for next-generation electronic and spintronic devices
3. Experimental Observation Discrepancies: Different compounds exhibit significantly different mobilities, with NbP typically showing higher mobility than TaAs

Limitations of Existing Research

While the topological properties of the TaAs family have been extensively studied, their charge transport properties remain an active research area. Previous work lacks systematic analysis of conductivity across all four compounds in the TaAs family and does not explain why NbP exhibits the highest mobility in this series.

Core Contributions

1. Systematic Theoretical Study: First comprehensive first-principles comparative study of conductivity for four compounds (TaAs, TaP, NbAs, NbP)
2. Transport Mechanism Clarification: Reveals that electron-phonon scattering rates and carrier velocity are the primary factors controlling conductivity
3. Doping Effect Analysis: Discovers that NbP is insensitive to electron or hole doping, while hole carriers in other compounds consistently exhibit the highest conductivity
4. Theory-Experiment Verification: Calculated results show excellent agreement with experimental data from high-quality samples, confirming the dominant role of phonon scattering

Methodology Details

Computational Framework

This study is based on density functional theory (DFT) and density functional perturbation theory (DFPT), utilizing the Quantum ESPRESSO software package for electronic structure calculations.

Technical Details

1. Pseudopotential Selection: Optimized conservative Vanderbilt pseudopotentials (ONCVPSP) from the Pseudo Dojo library
2. Parameter Settings:
   • Plane wave cutoff energy: 80 Ry
   • Methfessel-Paxton smearing: 0.01 Ry
   • k-point mesh: 12×12×12 (self-consistent calculations)
   • q-point mesh: 4×4×4 (phonon calculations)

Transport Calculation Method

The EPW code is employed for electron-phonon interaction and transport property calculations:

1. Wannier Interpolation: Electronic wave functions obtained on 8×8×8 k-point mesh
2. Orbital Selection: Five d-orbitals for each Ta/Nb atom, three p-orbitals for each As/P atom
3. Boltzmann Equation Solution: Iterative Boltzmann transport equation (IBTE) solved on fine grids of 140³ k-points and 70³ q-points

Technical Innovations

1. Accurate Treatment: Incorporates spin-orbit coupling effects for precise description of Weyl node structure
2. High-Precision Calculations: Sufficiently dense k-point and q-point grids ensure convergence
3. Multi-level Analysis: Comparative analysis combining IBTE and self-energy relaxation time approximation (SERTA)

Experimental Setup

Material System

The study focuses on four TaAs family compounds: TaAs, TaP, NbAs, and NbP, which share the same body-centered tetragonal crystal structure (space group I41md) but differ in lattice parameters.

Computational Parameters

• Energy Window: ±0.2 eV around the Fermi level
• Energy Broadening: 2 meV Gaussian smearing
• Temperature Range: 0-300 K
• Doping Levels: ±25 meV Fermi level shift

Comparison Benchmarks

Comparison with multiple experimental datasets, including measurements from high-quality single crystals by Zhang et al., Huang et al., and Sankar et al.

Experimental Results

Main Findings

Conductivity Ranking

Among the four compounds, the room-temperature conductivity ranking is: NbP > NbAs ≈ TaP > TaAs

Specific values at 300K:

• NbP: ~5×10⁴ S/cm
• NbAs: ~4×10⁴ S/cm
• TaP: ~4×10⁴ S/cm
• TaAs: ~3×10⁴ S/cm

Temperature Dependence

All compounds exhibit behavior consistent with experimental observations, showing rapid decrease from ~10⁵-10⁶ S/cm at low temperatures to several ×10⁴ S/cm near 300K.

Microscopic Mechanism Analysis

Factor Decomposition

According to the simplified Boltzmann expression σxx ∝ N(εF)⟨v²x⟩τ(εF):

1. Density of States N(εF): Largest in NbP, favorable for scattering
2. Scattering Rate τ⁻¹(εF): Strongest in NbP, weakest in TaAs
3. Carrier Velocity ⟨v²x⟩: Largest in NbP, compensating for strong scattering effects

Key Insights

NbP's high conductivity originates from its large Fermi velocity compensating for strong scattering rates, while TaAs exhibits the lowest conductivity due to smaller carrier pockets and limited velocity.

Doping Effects

Electron-Hole Asymmetry

• TaAs: Exhibits pronounced electron-hole asymmetry, with hole doping enhancing conductivity
• NbP: Nearly insensitive to ±25 meV doping, with three curves almost overlapping
• TaP and NbAs: Show moderate asymmetry

Physical Mechanism

Asymmetry is closely related to Weyl node position and Fermi surface topology. NbP's large, nearly compensated electron and hole pockets ensure that small Fermi level shifts do not activate new scattering channels.

Frequency-Resolved Analysis

Frequency-resolved scattering rates show all compounds couple with phonons across the entire frequency range, with TaAs accumulating most slowly and reaching the smallest saturation value, while NbP accumulates most strongly with the largest integrated scattering.

Related Work

Theoretical Studies

• Huang et al. and Weng et al. first predicted Weyl fermions in the TaAs family
• Sun et al. investigated topological surface states and Fermi arcs
• Multiple studies explored trends in structural, electronic, and vibrational properties

Experimental Studies

• Xu et al. and Lv et al. first experimentally observed Weyl semimetal TaAs
• Transport measurements consistently show enormous mobilities, sometimes exceeding 10⁶ cm²V⁻¹s⁻¹
• Significant mobility differences exist between different compounds

Contribution of This Work

Compared to previous research, this paper provides the first systematic theoretical analysis of conductivity across the entire TaAs family, explaining observed experimental trends and revealing microscopic transport mechanisms.

Conclusions and Discussion

Main Conclusions

1. Phonon Scattering Dominance: Transport in high-quality samples is indeed primarily limited by phonon scattering
2. Material Ordering Mechanism: The conductivity ranking NbP > NbAs ≈ TaP > TaAs is primarily determined by competition between carrier velocity and scattering rates
3. Doping Sensitivity: Dramatic differences in doping sensitivity among compounds reflect their Fermi surface topology and phase space constraints

Physical Picture

Despite NbP having the strongest scattering rate, its enhanced carrier velocity (arising from weaker SOC and extended linear dispersion) compensates for scattering effects, resulting in the highest conductivity.

Limitations

1. Computational Approximations: Inherent limitations of the DFT framework may underestimate certain correlation effects
2. Temperature Range: Primarily focuses on room temperature vicinity, with limited discussion of ultralow-temperature behavior
3. Sample Quality: Theoretical calculations correspond to ideal crystals; actual samples may contain defects and impurities

Future Directions

1. Extended Studies: Generalize the methodology to other Weyl semimetal systems
2. Nonlinear Effects: Investigate nonlinear transport properties under strong electric fields
3. Device Applications: Explore application potential in practical devices

In-Depth Evaluation

Strengths

1. Methodological Advancement: Employs state-of-the-art first-principles transport calculation methods with mature and reliable technical approaches
2. Strong Systematicity: First comprehensive comparative study of the entire TaAs family, filling a gap in the field
3. Theory-Experiment Integration: Excellent agreement between calculated and experimental results validates the reliability of theoretical methods
4. Deep Physical Insights: Reveals microscopic mechanisms underlying conductivity differences, providing clear physical pictures

Weaknesses

1. Simplified Mechanism Analysis: While providing qualitative explanations, the microscopic mechanism behind carrier velocity enhancement could be analyzed more deeply
2. Temperature Dependence: Relatively limited discussion of low-temperature behavior
3. Experimental Comparison Limitations: Experimental data quality varies for some compounds (e.g., NbAs), affecting comparison effectiveness

Impact

1. Academic Contribution: Provides important theoretical foundation for understanding transport properties in Weyl semimetals
2. Methodological Value: Establishes standard computational procedures for studying transport properties in topological semimetals
3. Application Guidance: Provides theoretical guidance for material selection and device design

Applicable Scenarios

1. Basic Research: Investigation of topological semimetal physics mechanisms
2. Materials Design: Performance prediction for novel Weyl semimetals
3. Device Development: Electronic device design based on Weyl semimetals

References

This paper cites important literature in the field, including:

• Theoretical prediction work on Weyl semimetals (Huang et al., Weng et al.)
• Experimental discovery literature (Xu et al., Lv et al.)
• Transport property measurements (Zhang et al., Shekhar et al.)
• Computational method development (Giustino et al., Poncé et al.)

Overall Assessment: This is a high-quality theoretical physics paper that employs advanced first-principles methods to systematically investigate transport properties in the TaAs family of Weyl semimetals. The theoretical calculations show excellent agreement with experiments, providing important insights into the transport mechanisms of these materials. The paper features clear technical approaches, reliable results, and significant academic value and application guidance for the field.