Halide perovskites have emerged as promising candidates for high-performance solar cells. This study investigates the temperature-dependent optoelectronic properties of mixed-cation mixed-halide perovskite solar cells using electroluminescence (EL) and photoluminescence (PL) hyperspectral imaging, along with current-voltage analysis. Luminescence images, which were converted to EL and PL external radiative efficiency (ERE) maps, revealed significant changes in the optoelectronic behavior of these devices at low temperatures. Specifically, we found that a significant source of heterogeneity in the low-temperature EL ERE maps below 240 K is related to local charge injection and extraction bottlenecks, whereas PL ERE maps show suppressed non-radiative recombination and significant improvements in efficiency throughout the investigated temperature range. The spatial distribution of ERE and its variation with applied current were analyzed, offering insights into charge-carrier dynamics and defect behavior. Our results reveal that while the perovskite layer exhibits enhanced ERE at low temperatures, charge injection barriers at the interfaces of the perovskite solar cells significantly suppress EL and degrade the fill factor below 240 K. These findings reveal that a deeper understanding of the performance of perovskite solar cells under low-temperature conditions is an essential step toward their potential application in space power systems and advanced semiconductor devices.
Comparison of Electroluminescence and Photoluminescence Imaging of Mixed-Cation Mixed-Halide Perovskite Solar Cells at Low Temperatures
- Paper ID: 2510.14213
- Title: Comparison of Electroluminescence and Photoluminescence Imaging of Mixed-Cation Mixed-Halide Perovskite Solar Cells at Low Temperatures
- Authors: Hurriyet Yuce-Cakir, Haoran Chen, Isaac Ogunniranye, Susanna M. Thon, Yanfa Yan, Zhaoning Song, Behrang H. Hamadani
- Classification: cond-mat.mtrl-sci physics.app-ph physics.optics
- Affiliated Institutions: National Institute of Standards and Technology (NIST), Johns Hopkins University, University of Toledo
- Paper Link: https://arxiv.org/abs/2510.14213
This study systematically investigates the optoelectronic properties of mixed-cation mixed-halide perovskite solar cells at low temperatures using electroluminescence (EL) and photoluminescence (PL) hyperspectral imaging techniques combined with current-voltage analysis. The research reveals that below 240K, non-uniformities in the EL external radiative efficiency (ERE) mapping primarily originate from local charge injection and extraction bottlenecks, while PL ERE mapping demonstrates suppressed non-radiative recombination with significantly enhanced efficiency. The results indicate that although the perovskite layer exhibits enhanced ERE at low temperatures, charge injection barriers at interfaces substantially suppress EL and reduce the fill factor below 240K.
- Insufficient understanding of low-temperature performance: The mechanisms of optoelectronic behavior in perovskite solar cells under cryogenic conditions remain inadequately understood, particularly regarding charge carrier dynamics and defect behavior
- Space application requirements: Space power systems require solar cells capable of stable operation at extreme cryogenic temperatures (as low as 170K)
- EL versus PL discrepancies: Current research lacks systematic comparative studies of electroluminescence and photoluminescence differences at low temperatures
- Perovskite solar cell efficiency has exceeded 26%, demonstrating enormous application potential
- Space applications impose stringent requirements on cryogenic performance
- Deep understanding of low-temperature mechanisms is crucial for device optimization
- Room temperature or elevated temperature measurements cannot fully reveal recombination phenomena and charge transport mechanisms
- Lack of spatial distribution mapping with absolute photon flux
- Relatively limited research on low-temperature EL in mixed-cation mixed-halide perovskites
- First systematic comparison: Systematic comparative study of low-temperature EL and PL hyperspectral imaging on identical devices
- ERE mapping technique: Development of conversion methodology from absolute photon flux to external radiative efficiency (ERE) mapping
- Interface effects discovery: Revelation of critical impact of charge injection barriers on device performance below 240K
- Spatial non-uniformity analysis: Provision of methods to distinguish local charge injection bottlenecks from intrinsic material properties
- Temperature-dependent mechanisms: Establishment of relationship models between temperature, charge injection, and radiative efficiency
Device Architecture: FTO/MeO-2PACz/perovskite/C60/BCP/Ag
- Perovskite Composition: Rb₀.₀₅Cs₀.₀₅MA₀.₀₅FA₀.₈₅Pb(I₀.₉₅Br₀.₀₅)₃
- Fabrication Process: Spin-coating method under nitrogen atmosphere
- Post-treatment: PDAI₂ passivation treatment
Equipment Configuration:
- Photon ETC Grand EOS hyperspectral wide-field imaging system
- Spectral range: 700-900 nm, resolution ~2 nm
- 5× objective lens, vacuum optical cryogenic chamber (10⁻⁶ Torr)
Measurement Parameters:
- EL: Injection current 0.3-14 mA/cm²
- PL: 532 nm laser excitation, power density <10 mW/cm²
- Temperature range: 300K-160K
EL ERE:
EL ERE=Jinjqϕexttot
PL ERE:
PL ERE=ϕabsϕexttot
where q is the elementary charge, φ_ext^tot is the total external luminescent photon flux, J_inj is the injection current density, and φ_abs is the absorbed excitation photon flux.
- Temperature Control: Lake Shore Model 335 temperature controller
- Electrical Measurement: Keithley 2601 source meter, steady-state J-V method
- Optical Measurement: Xenon lamp solar simulator, standard test conditions (AM1.5G, 1000 W/m²)
- Uncertainty: Relative uncertainty of photon flux measurement approximately ±15%
- Conversion of hyperspectral images to ERE mapping
- Temperature-dependent spectral peak position and full width at half maximum (FWHM) analysis
- Tracking of local area ERE evolution
- Peak redshift: From 1.54 eV at 300K to 1.51 eV at low temperature
- Spectral narrowing: FWHM decreases with decreasing temperature
- Mechanism: Lattice contraction enhances Pb-6s and I-5p antibonding orbital overlap
EL Performance:
- 300K-240K: Systematic increase in ERE
- <240K: Dramatic decrease in ERE, falling below initial 300K value
- Significant increase in spatial non-uniformity
PL Performance:
- 300K-120K: Continuous systematic increase in ERE
- Relatively uniform spatial distribution
- Continuous suppression of non-radiative recombination
Key Parameter Evolution:
- V_oc: Increases from 1.15V to 1.27V (300K→160K)
- FF: Decreases from 78.7% to 31.1%
- J_sc: Remains essentially constant at 24.5 mA/cm²
- Series resistance: Increases from 2.09 Ω·cm² to 29.92 Ω·cm²
- 300K: EL ERE mapping displays spotty non-uniformity
- <220K: Low ERE regions expand, eventually becoming dominant
- PL Mapping: Maintains relatively uniform distribution throughout
- ERE increases with injection current (10⁻³→10⁻²)
- Current dependence becomes complex at low temperatures
- Local contact resistance exhibits non-uniform distribution
High-temperature conditions (>240K):
- Charge injection is relatively facile
- Non-radiative recombination dominates ERE behavior
- Both EL and PL benefit from defect suppression
Low-temperature conditions (<240K):
- Schottky barrier formation
- Charge injection becomes the limiting factor
- PL remains unaffected by contacts, continuing to improve
According to the equation:
Voc=qEg−ΣVloss+qkTln(ERE)
Although the bandgap E_g decreases with decreasing temperature, the reduction in voltage loss terms and the kT/q term result in an overall increase in V_oc.
- Traditional research primarily focuses on phase transitions and defect freezing
- This work provides the first systematic comparison of EL/PL spatial mapping
- Contrasts with temperature-enhanced phenomena observed in luminescent devices
- Space environment temperature cycling: 170K-350K
- Existing research lacks systematic low-temperature optoelectronic characterization
- This work provides important reference for space applications
- Dual mechanisms: At low temperatures, intrinsic radiative efficiency of perovskite material increases, but contact barriers limit device performance
- Critical temperature: 240K represents a key transition point, below which contact effects dominate
- Value of spatial mapping: EL mapping effectively identifies local charge injection issues
- Device optimization directions: Improvement of charge transport layer/perovskite interface at low temperatures is necessary
- Single device architecture: Only p-i-n structure investigated; n-i-p structure may show different behavior
- Composition specificity: Results may vary depending on perovskite composition
- Measurement conditions: Vacuum environment differs from practical application environments
- Time stability: Long-term effects of cryogenic exposure not considered
- Interface engineering: Development of charge transport layers suitable for low temperatures
- Composition optimization: Exploration of perovskite compositions with superior low-temperature performance
- Encapsulation technology: Development of packaging schemes suitable for space applications
- Mechanism deepening: Further understanding of carrier dynamics at low temperatures
- Methodological innovation: First systematic low-temperature study combining EL/PL hyperspectral imaging
- Technical rigor: Advanced absolute photon flux measurement and ERE mapping techniques
- Clear mechanisms: Successful distinction between intrinsic material properties and device contact effects
- Application-oriented: Directly addresses space application requirements
- Rich data: Provides comprehensive temperature-performance relationship database
- Limited sample size: Relatively limited number of devices studied
- Long-term stability: Lack of low-temperature cycling stability testing
- Theoretical models: Quantitative models of charge injection barriers require further refinement
- Comparative studies: Lack of comparison with other perovskite systems
- Academic value: Provides new experimental methods and theoretical insights for perovskite low-temperature physics
- Application prospects: Offers important guidance for space solar cell development
- Technology advancement: Promotes application of hyperspectral imaging in solar cell characterization
- Standard establishment: May become standard methodology for perovskite solar cell low-temperature testing
- Space power systems: Satellite and deep space probe power supplies
- Polar applications: Extreme environment research stations such as Antarctic bases
- High-altitude applications: Solar power generation in plateau regions
- Fundamental research: Investigation of perovskite material physics mechanisms
This paper cites 44 relevant references covering important research achievements in multiple fields including perovskite solar cells, low-temperature physics, and luminescence mechanisms, providing solid theoretical foundation and technical support for the research.
Summary: This is a high-quality experimental physics study that reveals key mechanisms of low-temperature performance in perovskite solar cells through innovative hyperspectral imaging techniques, providing important scientific evidence and technical guidance for their applications in space and other extreme environments.