Impurity-induced spin density wave in the thermoelectric layered cobaltite Ca$_2$CoO$_3$$_{0.62}$CoO$_2$

Basic Information

• Paper ID: 2510.14225
• Title: Impurity-induced spin density wave in the thermoelectric layered cobaltite Ca$_2$CoO$_3$$_{0.62}$CoO$_2$
• Authors: Motoya Takenaka, Shogo Yoshida, Yoshiki J. Sato, Ryuji Okazaki (Department of Physics and Astronomy, Tokyo University of Science)
• Classification: cond-mat.str-el (Strongly Correlated Electron Systems), cond-mat.mtrl-sci (Materials Science)
• Publication Date: October 16, 2025 (arXiv preprint)
• Paper Link: https://arxiv.org/abs/2510.14225

Abstract

This study investigates the effects of Sn doping on the thermoelectric transport properties of single crystals of the layered cobaltite Ca$_2$CoO$_3$$_{0.62}$CoO$_2$. The material exhibits non-monotonic temperature dependence of resistivity and Seebeck coefficient due to its complex electronic and magnetic states. The research reveals that the onset temperature of short-range spin density wave (SDW) formation increases with increasing Sn content, indicating stabilization of impurity-induced SDW ordering, which is analogous to disorder/impurity-induced spin ordering phenomena observed in cuprate superconductors. The Seebeck coefficient is closely related to this impurity effect, showing slight enhancement below the onset temperature, suggesting reduced carrier concentration due to pseudogap formation associated with SDW ordering.

Research Background and Motivation

Research Problem

The core issue addressed in this study is understanding the mechanism by which impurity doping affects spin density wave (SDW) ordering and thermoelectric properties in the layered cobaltite Ca$_3$Co$_4$O$_9$.

Significance

1. Thermoelectric Material Applications: Oxide thermoelectric materials hold important promise for sustainable energy applications due to their excellent thermal stability, environmental friendliness, and abundant raw materials
2. Fundamental Physics: Ca$_3$Co$_4$O$_9$ with its unique misfit structure and complex electronic-magnetic states serves as an ideal platform for studying strongly correlated electron systems
3. Impurity Effect Mechanisms: Understanding how impurities affect quantum ordered states is crucial for material design and performance optimization

Limitations of Existing Research

1. Most doping studies focus on polycrystalline samples, lacking systematic investigation of single crystals
2. Insufficient understanding of the mechanisms by which different doping sites affect SDW ordering
3. The microscopic mechanism of impurity-induced SDW stabilization remains unclear

Core Contributions

1. Discovery of Sn-doping-induced SDW stabilization: First systematic study of the effect of Sn doping on SDW ordering in Ca$_3$Co$_4$O$_9$ single crystals
2. Revelation of site-dependent doping effects: Structural analysis demonstrates that Sn primarily substitutes Co sites in the conductive CoO$_2$ layer, directly affecting SDW formation
3. Establishment of correlation between impurity effects and thermoelectric properties: Clarification of the mechanism by which SDW-related pseudogap affects the Seebeck coefficient
4. Provision of theoretical framework through analogy with cuprates: Comparison of observed phenomena with impurity-induced magnetic ordering in cuprate superconductors

Methodology Details

Sample Preparation

Single Crystal Growth: Modified SrCl$_2$ flux technique for preparing Ca$_3$Co$_{4-x}$Sn$_x$O$_9$ (0 ≤ x ≤ 0.3) single crystals

• Raw materials: CaCO$_3$ (99.9%), Co$_3$O$_4$ (99.9%), SnO$_2$ (99.9%)
• Flux: SrCl$_2$, molar ratio 1:4.5
• Calcination conditions: 1173 K for 3 hours, followed by cooling at 6 K/h to 400 K
• Post-treatment: Annealing in oxygen atmosphere at 973 K for 24 hours

Polycrystalline Samples: Prepared by solid-state reaction method for powder XRD measurements

Characterization Techniques

1. Structural Characterization:
   • Powder X-ray Diffraction (XRD): Cu Kα radiation, θ-2θ scanning mode
   • Electron Probe Microanalysis (EPMA): Wavelength-dispersive X-ray spectroscopy (WDS) for quantitative elemental analysis
2. Transport Property Measurements:
   • Resistivity: Standard four-probe method, excitation current 50 μA
   • Seebeck Coefficient: Steady-state technique, differential thermocouple of manganin-constantan
   • Temperature gradient: approximately 0.2 K/mm
3. Magnetic Measurements:
   • SQUID Magnetometer: Magnetic susceptibility measurements, magnetic field μ$_0$H = 1 T along c-axis direction

Experimental Setup

Sample Series

Prepared Ca$_3$Co$_{4-x}$Sn$_x$O$_9$ series with nominal Sn content x = 0, 0.1, 0.2, 0.3

Measurement Conditions

• Temperature Range: 4.2-300 K
• Magnetic Field Conditions: Magnetic susceptibility measurements under zero-field-cooled conditions
• Sample Dimensions: Typical thin-plate single crystals of 2×2×0.1 mm³

Data Analysis Methods

1. Characteristic Temperature Determination:
   • SDW onset temperature T$_{SDW}^{on}$: Lower limit of Fermi liquid behavior
   • Minimum resistivity temperature T$_{min}$: Temperature corresponding to resistivity minimum
   • Long-range SDW transition temperature T$_{SDW}$: Determined from magnetic susceptibility anomalies
2. Carrier Concentration Estimation:
   • High temperature: Modified Heikes formula
   • Low temperature: Two-dimensional metallic Seebeck coefficient formula

Experimental Results

Structural Analysis Results

1. Compositional Analysis: EPMA results show actual Sn content slightly lower than nominal values, particularly for x = 0.1 and 0.2 samples
2. Lattice Parameter Variations:
   • a-axis and c-axis parameters systematically increase with Sn doping
   • b$_2$/b$_1$ ratio increases, indicating stronger effect of Sn doping on the conductive CoO$_2$ layer
   • Supports the conclusion that Sn$^{4+}$ (0.69 Å) substitutes low-spin Co$^{3+}$ (0.545 Å)

Transport Property Results

1. Resistivity Behavior:
   • All samples maintain similar temperature dependence
   • Resistivity systematically increases with Sn content
   • Fermi liquid behavior ρ(T) = ρ$_0$ + AT² observed in intermediate temperature range
2. Characteristic Temperature Evolution:
   • Both T$_{min}$ and T$_{SDW}^{on}$ increase with increasing Sn content
   • Contrasts sharply with Ti and Bi doping systems (where characteristic temperatures remain essentially unchanged)
3. Seebeck Coefficient:
   • Room temperature Seebeck coefficient systematically increases with Sn content
   • Carrier concentration n/n(x=0) decreases from 1.0 to approximately 0.6 (at x=0.3)
   • Further enhancement of Seebeck coefficient below SDW onset temperature

Magnetic Measurement Results

Magnetic susceptibility exhibits Curie-type behavior χ(T) ∼ C/T over the entire temperature range. Analysis of d(χ$^{-1}$)/dT vs T determines the long-range SDW transition temperature T$_{SDW}$ increases with increasing Sn content.

Related Work

Thermoelectric Oxide Research

Since the discovery of high thermoelectric performance in Na$_x$CoO$_2$, oxide thermoelectric materials have attracted widespread attention due to their thermal stability and environmental friendliness.

Electronic States in Ca$_3$Co$_4$O$_9$

The material exhibits a complex electronic-magnetic phase diagram:

• Near room temperature: Incoherent hopping transport
• Below T* ~ 140 K: Fermi liquid state
• Below T$_{SDW}^{on}$ ~ 100 K: Short-range SDW ordering
• Below T$_{SDW}$ ~ 30 K: Long-range SDW ordering
• Below T$_{FR}$ ~ 19 K: Ferrimagnetic state

Doping Effect Studies

Previous research has primarily focused on thermoelectric performance optimization in polycrystalline samples, with limited single crystal doping studies. This work reveals the importance of site-dependent effects through comparison with Bi and Ti doping studies.

Conclusions and Discussion

Main Conclusions

1. Impurity-induced SDW stabilization: Sn doping leads to increased SDW onset temperature and long-range ordering temperature
2. Site-dependent mechanism: Sn primarily substitutes Co sites in the conductive layer, directly affecting SDW formation
3. Pseudogap effect: SDW-related pseudogap formation results in reduced carrier concentration and enhanced Seebeck coefficient
4. Analogy with cuprates: Similar to the mechanism of impurity freezing of dynamic spin fluctuations observed in cuprate superconductors

Physical Mechanism Discussion

The authors propose that the mechanism of impurity-induced SDW stabilization is analogous to phenomena observed in cuprate superconductors, where non-magnetic impurities freeze dynamic spin fluctuations, promoting magnetic ordering formation. The cylindrical Fermi surface of the conductive layer is key to realizing this effect.

Limitations

1. Lack of theoretical models: Microscopic theoretical models describing how impurities induce magnetic ordering are lacking
2. Limited doping concentration range: The studied doping concentration range is relatively small (x ≤ 0.3)
3. Compositional inhomogeneity: Single crystals prepared by flux method may exhibit compositional inhomogeneity

Future Directions

1. Development of microscopic theoretical models for impurity-induced magnetic ordering
2. Extension to higher doping concentrations and other dopant elements
3. Investigation of impurity effects on other quantum ordered states such as superconductivity

In-Depth Evaluation

Strengths

1. Systematic Investigation: First systematic study of the effect of Sn doping on SDW ordering in Ca$_3$Co$_4$O$_9$ single crystals
2. Multi-technique Approach: Comprehensive use of structural, transport, and magnetic measurement techniques provides a complete physical picture
3. Mechanistic Insights: Comparison with other doping systems reveals site-dependent doping effects
4. Theoretical Connection: Analogy with cuprate superconductors provides a valuable theoretical framework

Weaknesses

1. Theoretical Depth: Lacks quantitative theoretical models to explain observed phenomena
2. Limited Doping Range: The studied doping concentration range is relatively limited
3. Microscopic Mechanism: Understanding of how impurities affect SDW formation at the microscopic level remains insufficient

Impact

1. Academic Value: Provides important experimental evidence for understanding impurity effects in strongly correlated electron systems
2. Application Prospects: Offers new insights for optimizing thermoelectric performance of layered oxide materials
3. Methodological Contribution: Establishes experimental methods for studying impurity-induced quantum ordered states

Applicable Scenarios

This research methodology and conclusions are applicable to:

1. Doping studies of other layered oxide thermoelectric materials
2. Strongly correlated electron systems with magnetic instability
3. Studies of impurity-induced quantum phase transitions

References

The paper cites 56 important references covering key works in thermoelectric materials, strongly correlated electron systems, and impurity effects, providing a solid theoretical foundation and experimental comparison for the research.