Electric field-induced spin-valley locking in twisted bilayer buckled honeycomb materials

Basic Information

• Paper ID: 2510.14404
• Title: Electric field-induced spin-valley locking in twisted bilayer buckled honeycomb materials
• Authors: Harold J.W. Zandvliet, Pantelis Bampoulis, Cristiane Morais Smith, Lumen Eek
• Institutions: University of Twente (Netherlands), Utrecht University (Netherlands)
• Classification: cond-mat.mes-hall (Condensed Matter Physics - Mesoscopic and Nanoscale Physics)
• Paper Link: https://arxiv.org/abs/2510.14404

Abstract

Twisted bilayer honeycomb materials exhibit moiré superstructures with hexagonal arrangements composed of AB and BA stacking domains separated by domain walls. When a perpendicular electric field is applied to twisted bilayer graphene, it induces inverted band gaps in the AB and BA stacking domains. These inverted band gaps lead to the formation of counter-propagating valley-protected helical domain wall states forming a two-dimensional triangular network, also known as the quantum valley Hall effect. Due to spin-orbit coupling and buckling, the quantum valley Hall effect in twisted bilayer silicene and germanene is more complex than in twisted bilayer graphene. The study reveals the existence of an electric field range within which the spin degrees of freedom become locked to the valley degrees of freedom of electrons in the quantum valley Hall states, thereby producing enhanced topological protection.

Research Background and Motivation

Problem Background

1. Topological insulator research hotspot: Topological insulators possess insulating bulk and metallic surface characteristics, with surface states exhibiting spin-momentum locking that resists complete backscattering
2. Limitations of graphene: Although Kane and Mele predicted that graphene could support quantum spin Hall (QSH) edge states, graphene's spin-orbit coupling is only a few microelectronvolts, limiting applications at realistic temperatures
3. Advantages of heavy element materials: Buckled honeycomb materials such as silicene and germanene possess stronger spin-orbit coupling (SOC ∝ Z⁴) and buckled structures, providing possibilities for realizing more robust topological states

Research Motivation

1. Novel physics in twisted bilayer systems: Twisted bilayer graphene exhibits unconventional superconductivity near the magic angle, inspiring exploration of twisted systems in other two-dimensional materials
2. Fragility of valley Hall effects: Existing valley-protected states are susceptible to intervalley scattering induced by impurities, necessitating the search for stronger topological protection mechanisms
3. Potential of spin-valley locking: By locking spin degrees of freedom to valley degrees of freedom, it is hoped to achieve strong topological protection comparable to QSH systems

Core Contributions

1. Discovery of spin-valley locking phenomenon: Within a specific electric field range, spin degrees of freedom become locked to valley degrees of freedom in twisted bilayer silicene and germanene
2. Establishment of complete phase diagram: Determination of topological phase transitions at different electric field strengths, including ordinary insulators, spin-valley locked phases, and pure valley-protected phases
3. Construction of theoretical framework: Development of a theoretical model based on the Kane-Mele Hamiltonian describing buckled bilayer honeycomb materials
4. Analysis of experimental feasibility: Provision of critical electric fields (0.3-0.4 V/nm) required for realizing spin-valley locking in germanene systems, which are experimentally achievable

Methodology Details

Task Definition

Investigation of electronic structure evolution in twisted bilayer buckled honeycomb materials (silicene, germanene) under external electric fields, particularly the coupling behavior between spin and valley degrees of freedom and their topological protection characteristics.

Theoretical Model

Hamiltonian Construction

For the AB stacking region, the system Hamiltonian is:

H = t∑⟨il,jl⟩l c†il cjl + t⊥∑⟨il,jl'⟩l≠l' c†il cjl' + (iλSO/3√3)∑⟨⟨il,jl⟩⟩l νijl c†il sz cjl + U⊥∑il φl c†il cil + M∑ill ξil c†il cil

Where:

• Intra-layer hopping term: Nearest-neighbor hopping with strength t
• Inter-layer hopping term: Inter-layer coupling with strength t⊥
• Spin-orbit coupling: Intrinsic spin-orbit coupling with strength λSO
• Inter-layer bias: U⊥ = (d/2)Ez, where d is the inter-layer distance
• Intra-layer bias: M = (δ/2)Ez, where δ is the buckling height

Low-energy band structure

Expanding near the K and K' points yields four spin-degenerate energy bands:

E±α=1,2 = ±√[A(k) + (-1)α√B(k)]

Where A(k) and B(k) contain kinetic energy terms, inter-layer coupling, and electric field effects.

Spin-valley locking conditions

Critical electric field

At the K point (ξ=1), the band gap inversion conditions for spin-up and spin-down bands are:

• Spin-up, BA region: Ez,c1 = 2λSO/(d + δ)
• Spin-up, AB region: Ez,c2 = 2λSO/(d - δ)

Within the intermediate region Ez,c1 ≤ Ez ≤ Ez,c2, the spin-up band in the BA region undergoes inversion while the AB region does not, forming the spin-valley locked state.

Twisted bilayer system modeling

Moiré Hamiltonian

H = t∑⟨il,jl⟩l c†il cjl + ∑⟨il,jl'⟩l≠l' t⊥(r1 - r2)c†il cjl' + (iλSO/3√3)∑⟨⟨il,jl⟩⟩l νijl c†il sz cjl + U⊥∑ill φl c†il cil + M∑ill ξil c†il cil

The inter-layer hopping parameter is expressed as:

t⊥(r1 - r2) = t⊥ · [1 - ((r1 - r2)·ẑ/|r1 - r2|)²] exp[-(|r1 - r2| - aCC)/δ]

Relaxation effects

Atomic positions after relaxation are described using analytical displacement fields:

u±(r) = ±(1/|G₁|²) ∑[Ga[α₁sin(Ga·r) + 2α₃sin(2Ga·r)] + α₂∑(Ga - Ga+1)sin[(Ga - Ga+1)·r]]

Experimental Setup

Material Parameters

• Germanene parameters: λSO = 50 meV, δ = 0.04 nm, d = 0.28 nm
• Hopping parameters: t = -1 eV, t⊥ = 0.4 eV
• Twist angle: θ = 0.47° (angle manageable by numerical calculations)

Computational Methods

1. Tight-binding calculations: Electronic structure calculations based on the Kane-Mele model
2. Spectral function analysis: Calculation of spin-resolved interface spectral functions A_σ(E,k)
3. Local density of states: Calculation of spin-resolved local density of states (LDoS)

Experimental Results

Main Results

1. Phase diagram establishment

• First stage (Ez < Ez,c1): Ordinary insulator with no topologically protected states
• Second stage (Ez,c1 ≤ Ez ≤ Ez,c2): Spin-valley locked phase with conductance 2e²/h
• Third stage (Ez > Ez,c2): Pure valley-protected phase with conductance 4e²/h

2. Interface state characteristics

In the spin-valley locked region:

• K valley: Right-propagating spin-up states
• K' valley: Left-propagating spin-down states
• Formation of completely spin-polarized edge currents

3. Twisted bilayer network

• Successful observation of triangular topological network structure
• Spin-resolved LDoS reveals clear spin separation
• Asymmetry at AB/BA interfaces reflects symmetry breaking due to buckling

Key Findings

1. Enhanced topological protection

Spin-valley locking endows domain wall states with the same topological protection strength as QSH edge states, significantly superior to pure valley-protected states.

2. Quantized conductance

• Spin-valley locked phase: G = 2e²/h
• Pure valley-protected phase: G = 4e²/h
• Conductance jumps mark topological phase transitions

3. Experimental accessibility

The critical electric field for germanene systems (0.3-0.4 V/nm) is achievable through conventional gate techniques.

Related Work

Topological insulator research

• Three-dimensional topological insulators: Pioneering work by Hasan and Kane established the theoretical framework for topological insulators
• Two-dimensional QSH effect: Kane-Mele model predicted QSH effect in graphene, but SOC is too weak

Twisted bilayer systems

• Magic angle graphene: Unconventional superconductivity discovered by Cao et al. opened the field of twistronics
• Valley Hall networks: Theoretical framework for valley Hall effect in twisted bilayer graphene established by Zhang et al. and San-Jose et al.

Heavy element honeycomb materials

• Silicene and germanene: Stronger topological gaps predicted by Liu et al.
• Experimental progress: Room-temperature QSH effect in germanene achieved by Bampoulis et al.

Conclusions and Discussion

Main Conclusions

1. Discovery of new topological phase: Confirmation of the existence of spin-valley locked phase in twisted bilayer buckled honeycomb materials
2. Enhanced topological protection: Spin-valley locking provides stronger topological protection than pure valley protection
3. Tunable topological phase transitions: Reversible switching between different topological phases is possible through electric field control

Limitations

1. Twist angle constraints: Extremely small twist angles (< 0.5°) are required to observe clear topological networks
2. Material stability: Silicene and germanene are unstable under ambient conditions, requiring ultra-high vacuum environments
3. Theoretical simplifications: Rashba spin-orbit coupling and other higher-order effects are neglected

Future Directions

1. Experimental realization: Development of fabrication techniques for smaller twist angles
2. Other materials: Exploration of other heavy element honeycomb materials such as stanene
3. Device applications: Development of topological electronic devices based on spin-valley locking

In-depth Evaluation

Strengths

1. Theoretical innovation: First prediction of spin-valley locking phenomenon, providing a new mechanism for topological electronics
2. Complete model: Establishment of a comprehensive theoretical framework including relaxation effects and moiré physics
3. Experimental guidance: Provision of clear experimental parameters and expected results
4. Physical insights: Deep revelation of interaction mechanisms between spin, valley, and topology

Weaknesses

1. Numerical limitations: Due to computational complexity, only relatively large twist angles can be handled
2. Material challenges: Required materials are difficult to fabricate and stabilize experimentally
3. Effect verification: Lack of direct experimental verification

Impact

1. Academic value: Significant contribution to the intersection of topological electronics and twistronics
2. Application prospects: Provides theoretical foundation for developing novel topological quantum devices
3. Methodology: Established theoretical methods are generalizable to other similar systems

Applicable Scenarios

1. Basic research: Topological quantum states and quantum transport research
2. Device development: Topological quantum computing and spintronics devices
3. Material design: Theoretical prediction of novel two-dimensional topological materials

References

The paper cites 56 important references covering pioneering works in topological insulator theory, twisted bilayer systems, and heavy element honeycomb materials, providing a solid theoretical foundation for the research.

Summary: This is a theoretically significant work in the field of topological electronics, representing the first prediction of spin-valley locking phenomenon in twisted bilayer buckled honeycomb materials, offering a new pathway for realizing quantum devices with enhanced topological protection. Despite experimental challenges, its theoretical innovations and physical insights have important implications for the development of the field.