Enhanced Secondary Electron Detection of Single Ion Implants in Silicon Through Thin SiO2 Layers

Basic Information

• Paper ID: 2510.14495
• Title: Enhanced Secondary Electron Detection of Single Ion Implants in Silicon Through Thin SiO2 Layers
• Authors: E. B. Schneider, O. G. Lloyd-Willard, K. Stockbridge, M. Ludlow, S. Eserin, L. Antwis, D. C. Cox, R. P. Webb, B. N. Murdin, S. K. Clowes
• Classification: cond-mat.mtrl-sci quant-ph
• Publication Date: October 17, 2025
• Paper Link: https://arxiv.org/abs/2510.14495v1

Abstract

This study demonstrates a non-destructive, high-efficiency method for detecting single ion implantation events using secondary electron (SE) detection in focused ion beam (FIB) systems. By implanting low-energy Sb ions into undoped silicon, single ion detection efficiency as high as 98% was achieved, verified through calibrated ion current measurements before and after implantation. The technique achieves approximately 30 nm spatial resolution without requiring electrical contacts or device fabrication. The research reveals that introducing controlled SiO2 overlayers significantly enhances secondary electron yield, consistent with increased electron mean free path in the oxide, while maintaining high probability of successful ion deposition in the underlying substrate.

Research Background and Motivation

Problem Definition

1. Core Challenge: Achieving precise localization and detection of individual dopant atoms in silicon-based quantum devices, which is critical for scalable quantum devices based on Group V donors
2. Technical Obstacles: Traditional ion implantation exhibits randomness (Poisson process), with probability of implanting one ion per pulse limited to only 37% under ideal conditions
3. Limitations of Existing Methods:
   • Ion beam induced current (IBIC) methods require pre-fabricated device structures and electrical contacts, limiting flux and material flexibility
   • Conventional secondary electron detection schemes suffer from low signal-to-noise ratio and lower efficiency compared to IBIC

Research Significance

• Quantum technology development requires atomic-level precision in individual dopant atoms or defects as functional units
• Ion implantation is fundamental to semiconductor device processing; extension to single-ion level is crucial for quantum device manufacturing
• Non-contact detection methods can enhance manufacturing throughput and material applicability

Core Contributions

1. High-Efficiency Detection Method: Development of single ion detection technique based on secondary electrons, achieving detection efficiency up to 98% with minimal uncertainty
2. SiO2 Enhancement Mechanism: Discovery that ultrathin SiO2 overlayers significantly enhance secondary electron yield, with determination of optimal oxide thickness for maximizing injection detection success probability
3. Theoretical Explanation: Explanation of trends for different ion species and energies through Lindhard-Scharff electron stopping theory
4. Precise Calibration: Quantitative detection efficiency measurements obtained through ion current calibration before and after implantation
5. Broad Applicability: Demonstration of method compatibility with multiple host materials, providing a scalable pathway for deterministic single-ion implantation

Methodology Details

Theoretical Foundation

Quantitative analysis of detection efficiency based on Poisson distribution model:

• Total detection events: N = ηL (where η is detection efficiency, L is ion flux)
• Empty pulse probability: p₀ = e^(-ηLt)
• Efficiency η obtained through linear regression of ν = -ln(p₀) versus λ = Lt

Experimental Setup

1. Sample Preparation:
   • High-resistivity silicon samples with SiO2 layer thickness of 2-10.4 nm
   • Uniform oxide layers prepared via atomic layer deposition (ALD)
   • Oxide thickness measured by ellipsometry
2. Ion Implantation System:
   • SIMPLE tool (Ionoptika QOne)
   • Sb ions at 25 keV and 50 keV energies
   • Dual-channel electron multiplier (CEM) detector
3. Detection Protocol:
   • Four-pixel array with average doses of 0.25, 0.5, 0.75, 1 ion/pulse
   • 1 μm pixel spacing to prevent lateral overlap
   • Pulse termination upon signal detection for each pixel

Data Analysis Method

Linear regression analysis of the relationship between T = -1/L·ln(p₀) and pulse duration t:

T = η(t - t₀) = ηt + c

where η and c are free parameters, and t₀ is the blanking delay time.

Experimental Setup

Sample Parameters

• Substrate: High-resistivity silicon
• Overlayer: 2-10.4 nm thick SiO2, deposited via ALD
• Ion Species: Primarily Sb, with extended studies including Si, Sn, Er, Yb, Au, Bi
• Energy Range: 8-50 keV

Evaluation Metrics

• Detection Efficiency η: Ratio of true positive detections to total true positives
• Injection Success Probability P_S(τ): P_I(τ)·η(τ), where P_I(τ) is the probability of ion penetration through the oxide layer
• Spatial Resolution: ~30 nm

Calibration Method

• Faraday cup connected to Kelvin picoammeter for beam current measurement
• Beam switching at 10-second intervals to measure average current variation
• Calibration performed before and after each set of four arrays

Experimental Results

Primary Results

1. Detection Efficiency:
   • 25 keV Sb⁺: Maximum detection efficiency of 98%
   • 50 keV Sb²⁺: Similar high efficiency performance
   • Efficiency increases with SiO2 thickness and approaches saturation
2. Optimal Thickness Determination:
   • Optimal SiO2 thickness determined through P_S(τ) = P_I(τ)·η(τ)
   • Optimal thickness range is relatively broad, exhibiting robustness to deposition errors
   • 25 keV: Maintains near-optimal performance within ±1 nm error range
   • 50 keV: Maintains near-optimal performance within ±2 nm error range
3. Ion Species Dependence:
   • Detection efficiency shows slight decrease with ion mass (Si→Bi)
   • Consistent with Lindhard-Scharff theory predictions
   • Efficiency increases with ion velocity

TRIM Simulation Results

• Sb depth distribution in Si substrate exhibits approximately linear relationship with SiO2 thickness
• Monte Carlo simulation of 50,000 implantations validates penetration probability P_I(τ)
• Two-dimensional distribution reveals ion stopping positions in Si substrate

Blanking Delay Time

Measurements from eleven different samples with 25 keV Sb ions yield:

• t₀ = 51 ± 5 ns
• Corresponding to approximately 10 mm effective blanking region length, consistent with SIMPLE geometry

Related Work

Existing Detection Methods

1. IBIC Method: Requires pre-fabricated device structures, limiting flux and flexibility
2. Conventional SE Detection: Low signal-to-noise ratio, lower efficiency than IBIC
3. Other Techniques: Dependent on large accelerator infrastructure, have not yet simultaneously achieved high confidence and high throughput

Theoretical Model Comparison

• Ohya and Ishitani's Ga⁺ ion research predicts lower SiO2 yield than Si
• Ullah et al.'s rare gas ion research reaches opposite conclusions
• This study's experimental data provides constraints on these model parameters

Conclusions and Discussion

Main Conclusions

1. Single ion detection efficiency as high as 98% achieved, verified through precise ion current calibration
2. SiO2 overlayers significantly enhance secondary electron yield, attributed to increased inelastic mean free path and escape probability in the oxide
3. Optimal detection coincides with oxide thickness that still permits nearly 100% injection probability
4. The method achieves nanometer-scale spatial precision without requiring electrical contacts or pre-fabricated device structures

Physical Mechanism Explanation

Based on secondary electron yield theory:

γ_KE = (P·ℓ_e·S_e)/(2J)

where:

• S_e: Electronic stopping power
• ℓ_e: Electron mean free path
• P: Average escape probability
• J: Average energy required to produce free electrons

The enhancement of SiO2 relative to Si primarily originates from significant increase in the P·ℓ_e term, compensating for the decrease in S_e and increase in J.

Limitations

1. Detection efficiency saturates at high yields, making quantitative conclusions about yield challenging
2. Different theoretical models predict divergent relative yields for SiO2/Si
3. Further research needed to fully understand behavioral differences among different ion species

Future Directions

1. Extension to broader material systems and ion species
2. Optimization of subsequent chemical removal processes for SiO2 overlayers
3. Integration with other quantum device manufacturing techniques for complete device integration

In-Depth Evaluation

Strengths

1. Technical Innovation: First systematic demonstration of significant enhancement effect of SiO2 overlayers on single ion detection
2. Experimental Rigor: Reliable results ensured through precise ion current calibration and extensive statistical data
3. Theory Integration: Combination of experimental observations with Lindhard-Scharff theory provides deep understanding of physical mechanisms
4. Practical Value: Provides non-destructive detection method without electrical contacts, greatly enhancing manufacturing flexibility

Limitations

1. Mechanism Understanding: Understanding of SiO2 enhancement mechanism remains incomplete, particularly regarding specific contributions of P and ℓ_e
2. Species Limitation: Primarily focused on Sb ions, with limited research on other important quantum device ions (such as P, As)
3. Long-term Stability: Discussion of SiO2 layer stability and compatibility during actual device manufacturing processes is absent

Impact

1. Academic Contribution: Provides important experimental data and theoretical insights for single ion detection field
2. Technological Application: Offers scalable precise doping method for quantum device manufacturing
3. Industrial Value: Likely to advance development of silicon-based quantum computing and sensor technologies

Application Scenarios

1. Quantum Device Manufacturing: Silicon-based quantum bits, single-electron transistors, etc.
2. Precision Doping: Semiconductor devices requiring atomic-level precision
3. Materials Research: Fundamental research on single-atom doping effects
4. Sensor Applications: Ultra-sensitive sensors based on individual dopant atoms

References

The paper cites important literature in related fields, including:

• Fundamental quantum device theory literature
• Classical papers on ion beam techniques and IBIC methods
• Theoretical and experimental studies on secondary electron emission
• Standard literature on TRIM simulation and ion stopping theory

This research provides an important breakthrough in single ion detection technology, particularly achieving high-efficiency, non-destructive detection through the SiO2 overlayer enhancement effect. This achievement is significant for advancing silicon-based quantum technology development and establishes a technical foundation for realizing scalable quantum device manufacturing.