Contrasting properties of free carriers in $n$- and $p$-type Sb$_2$Se$_3$

Basic Information

• Paper ID: 2510.14554
• Title: Contrasting properties of free carriers in $n$- and $p$-type Sb$_2$Se$_3$
• Authors: F. Herklotz, E. V. Lavrov, T. D. C. Hobson, T. P. Shalvey, J. D. Major, K. Durose
• Classification: cond-mat.mtrl-sci (Condensed Matter Physics - Materials Science)
• Publication Date: October 17, 2025
• Paper Link: https://arxiv.org/abs/2510.14554

Abstract

This paper reports persistent photoconductivity observed in Cd- or Zn-doped p-type Sb$_2$Se$_3$ single crystals, where enhanced conductivity persists for hours after illumination ceases at temperatures below approximately 25 K. Through comparative transport and infrared absorption measurements with n-type Cl-doped samples, we find that hole transport in Sb$_2$Se$_3$ is more strongly affected by intrinsic carrier scattering than electron transport. These results indicate fundamental asymmetry in carrier dynamics and highlight the potential role of polaron effects in limiting hole mobility in this quasi-one-dimensional semiconductor.

Research Background and Motivation

Research Problem

This study addresses the asymmetry in electron and hole transport mechanisms in Sb$_2$Se$_3$ semiconductors, particularly the influence of polaron effects on carrier mobility.

Significance

1. Broad application prospects: Sb$_2$Se$_3$ demonstrates significant potential in photovoltaics, photoelectrochemical devices, photodetectors, and thermoelectric applications
2. Unique structural features: Its quasi-one-dimensional crystal structure comprises covalently bonded Sb$_4$Se$_6$$_n$ nanoribbons held together by van der Waals forces, resulting in strong anisotropy
3. Performance bottlenecks: Low open-circuit voltage in photovoltaic devices, primarily attributed to low carrier concentration and recombination losses

Limitations of Existing Research

• Controversy remains regarding the actual impact of polaron effects in Sb$_2$Se$_3$
• Lack of systematic comparison of carrier transport mechanisms between p-type and n-type samples
• Self-trapping of polarons is inherently difficult to eliminate, requiring deeper mechanistic understanding

Research Motivation

Through comparative investigation of photoconductivity and infrared absorption characteristics in p-type and n-type Sb$_2$Se$_3$ single crystals, we aim to reveal the electron-hole transport asymmetry and provide theoretical foundations for device optimization.

Core Contributions

1. First report of persistent photoconductivity in p-type Sb$_2$Se$_3$: Observation of persistent photoconductivity effects at low temperatures in Cd- and Zn-doped p-type single crystals
2. Revelation of carrier transport asymmetry: Systematic comparison demonstrates that hole transport is more strongly affected by intrinsic scattering mechanisms than electron transport
3. Experimental evidence for polaron effects: Infrared absorption spectroscopy reveals stronger polaron characteristics in p-type samples
4. Establishment of structure-property relationships: Linking quasi-one-dimensional crystal structure to carrier dynamics asymmetry

Methodology Details

Sample Preparation

• Growth method: Vertical Bridgman melt growth
• Doping types:
  • n-type: Cl-doped
  • p-type: Cd-, Zn-doped
  • Controls: Undoped, O-doped, Sn-doped
• Sample specifications: Ingot-shaped single crystals with 4 mm diameter and 1-3 cm length, cut into 3×3 mm² slices with b-axis orientation

Electrical Measurements

• I-V characteristics: Measured using Keithley 2601A in two-point probe configuration
• Contact preparation:
  • n-type samples: In contacts (ohmic)
  • p-type samples: Au contacts
• Hall effect: Determination of carrier type and concentration
• Temperature range: 18-200 K

Optical Measurements

• Infrared absorption: Bomem DA3.01 Fourier-transform infrared spectrometer
• Polarization resolution: Linear wire-grid polarizers for polarization measurements along a- and c-axes
• Excitation source: 150 W xenon arc lamp, power density ~10 mW/cm²
• Detection configuration: Light beam propagating along b-axis

Experimental Setup

Measurement Conditions

• Temperature control: Continuous-flow helium cryostat, temperature range 18-200 K
• Optical windows: KBr outer window and ZnSe inner window ensuring broadband transmission
• Spectral resolution: 1-2 cm⁻¹
• Heating rate: Approximately 2 K/min

Sample Characteristics

• p-type Cd-doped: Room-temperature hole concentration ~4×10¹⁵ cm⁻³, mobility 1-2 cm²/Vs
• n-type Cl-doped: Electron concentration and mobility approximately one order of magnitude higher than p-type

Experimental Results

Persistent Photoconductivity Phenomenon

1. Temperature dependence: Significant persistent photoconductivity observed below 25 K
2. Temporal characteristics: Enhanced conductivity persists for hours after illumination ceases
3. Doping dependence: Observed only in Cl-, Cd-, and Zn-doped samples; absent in undoped samples

Activation Energy Analysis

Activation energies obtained from Arrhenius plots:

• Cl-doped (n-type): ~170 meV (ClSe donor ionization energy)
• Cd-doped (p-type): ~350 meV
• Zn-doped (p-type): ~360 meV
• Undoped: ~500 meV

Infrared Absorption Spectral Features

n-type samples (Cl-doped)

• Display typical free carrier absorption: α ∝ ω⁻²·⁸
• Strong polarization anisotropy: c-axis polarized absorption approximately 4 times stronger than a-axis
• Consistent with Fermi surface anisotropy of quasi-one-dimensional structure

p-type samples (Cd-doped)

• Broad plateau feature below 420 cm⁻¹
• Lack of pronounced ω⁻ⁿ dependence
• Reversed polarization anisotropy: a-axis polarization slightly stronger than c-axis
• Overall absorption intensity significantly higher than n-type samples

Key Findings

1. Carrier dynamics asymmetry: Qualitative differences in photoconductivity behavior between p-type and n-type samples
2. Scattering mechanism differences: Hole transport exhibits stronger intrinsic scattering characteristics
3. Polaron effect evidence: Spectral features in p-type samples suggest polaron formation

Related Work

Polaron Theory Background

• Holstein model and Emin theory provide foundations for understanding polaron effects
• In polar semiconductors, strong electron-phonon coupling can lead to small polaron and large polaron formation

Sb₂Se₃ Related Research

• Recent theoretical and experimental studies have proposed the possibility of polaron effects
• Controversy remains regarding the actual extent of their impact
• This work provides new experimental evidence of carrier-type dependence

Quasi-one-dimensional Materials

• Carrier transport anisotropy resulting from structural anisotropy has been observed in various materials
• This work reveals fundamental differences in electron-hole transport mechanisms

Conclusions and Discussion

Main Conclusions

1. Persistent photoconductivity exists in p-type Sb₂Se₃: First observation of this phenomenon in Cd/Zn-doped samples
2. Carrier transport asymmetry: Hole transport is more strongly affected by intrinsic scattering than electron transport
3. Role of polaron effects: Infrared spectroscopic evidence supports the important role of polaron effects in limiting hole mobility

Limitations

1. Mechanistic explanation: Additional theoretical calculations needed to support polaron models
2. Temperature range: Primarily focused on low-temperature regime; high-temperature behavior requires further investigation
3. Quantitative analysis: Lack of quantitative assessment of polaron coupling strength

Future Directions

1. Combine first-principles calculations to deeply understand electron-phonon coupling mechanisms
2. Explore material engineering approaches to reduce polaron effects
3. Investigate specific impacts of polaron effects on device performance

In-depth Evaluation

Strengths

1. Rigorous experimental design: Systematic comparison of samples with different doping types with clear variable control
2. Comprehensive technical approaches: Combination of electrical and optical measurements with mutual verification
3. Important findings: Revelation of carrier transport asymmetry is significant for understanding intrinsic material properties
4. High data quality: High-quality single crystal samples and high measurement precision

Weaknesses

1. Limited theoretical analysis: Lack of in-depth theoretical models to explain observed phenomena
2. Insufficient mechanistic discussion: Limited discussion of microscopic mechanisms of polaron formation
3. Limited application guidance: Insufficient discussion on utilizing these findings to improve device performance

Impact

1. Academic value: Provides important experimental foundation for understanding carrier dynamics in quasi-one-dimensional semiconductors
2. Application prospects: Offers guidance for optimizing Sb₂Se₃-based devices
3. Methodological contribution: Provides experimental methods for studying carrier transport asymmetry

Applicable Scenarios

• Fundamental semiconductor physics research
• Photovoltaic device optimization
• Carrier transport studies in quasi-one-dimensional materials
• Experimental verification of polaron effects

References

The paper cites 29 relevant references covering Sb₂Se₃ applications, polaron theory, and carrier transport, providing a solid theoretical foundation and experimental comparison for the research.

Overall Assessment: This is a high-quality experimental physics paper that reveals important asymmetry in carrier transport in Sb₂Se₃ through carefully designed comparative experiments, providing significant contributions to understanding the intrinsic properties of this quasi-one-dimensional semiconductor. While there is room for improvement in theoretical interpretation, the experimental findings themselves possess important scientific value and application significance.