Disorder-assisted Spin-Filtering at Metal/Ferromagnet Interfaces: An Alternative Route to Anisotropic Magnetoresistance

Basic Information

• Paper ID: 2510.14867
• Title: Disorder-assisted Spin-Filtering at Metal/Ferromagnet Interfaces: An Alternative Route to Anisotropic Magnetoresistance
• Authors: Ivan Iorsh (Queen's University), Mikhail Titov (Radboud University)
• Classification: cond-mat.mes-hall cond-mat.dis-nn cond-mat.mtrl-sci
• Publication Date: October 17, 2025
• Paper Link: https://arxiv.org/abs/2510.14867

Abstract

This paper proposes a novel interfacial scattering mechanism capable of generating significant anisotropic magnetoresistance (AMR) in metal/ferromagnet bilayers (such as Pt/YIG) without relying on bulk-phase spin or orbital Hall currents. Through a δ-layer model incorporating interfacial exchange and Rashba spin-orbit coupling, charge transfer at high-quality interfaces creates spin-selective phase conditions (interfacial spin filtering) that suppress backscattering of one spin projection while enhancing momentum relaxation of the other. The resulting resistivity anisotropy peaks at optimal metal thicknesses of several nanometers, quantitatively reproducing the thickness and angular dependence and characteristic amplitude typically attributed to spin Hall magnetoresistance (SMR).

Research Background and Motivation

Research Problem

The core issue addressed in this paper concerns the physical mechanism of anisotropic magnetoresistance (AMR) in heavy metal/ferromagnet heterostructures. Conventionally, this phenomenon has been widely attributed to the spin Hall effect (SHE) and orbital Hall effect (OHE), but these explanations face conceptual ambiguities.

Problem Significance

1. Conceptual Challenges: The definitions of spin current and orbital current operators are non-unique and do not correspond to conserved quantities, nor do they couple to external fields in the corresponding effective Hamiltonians
2. Experimental Interpretation: The existing SHE/OHE-based picture faces issues with insufficient theoretical foundation in explaining magnetotransport phenomena in systems such as Pt/YIG
3. Technical Requirements: Spintronics devices require more accurate physical understanding to guide design and optimization

Limitations of Existing Approaches

• Spin Hall Magnetoresistance (SMR) Model: Relies on the concept of spin current, but the spin current operator lacks the status of a true observable
• Orbital Hall Effect: Similarly faces ambiguities in operator definition
• Interfacial Effects: Existing models provide insufficient description of interfacial scattering mechanisms

Core Contributions

1. Proposed a novel spin-filtering magnetoresistance (SFMR) mechanism: Based on interfacial scattering rather than bulk Hall effects
2. Established a δ-layer interfacial model: Incorporating interfacial charge transfer, exchange interaction, and Rashba spin-orbit coupling
3. Predicted linear scaling relationships: Maximum AMR scales linearly with smaller coupling strengths (exchange or spin-orbit)
4. Quantitatively reproduced experimental observations: Including thickness dependence, angular dependence, and characteristic amplitude
5. Provided clear distinction criteria from SMR: Including strong sensitivity to interfacial charge transfer and disorder

Detailed Methodology

Problem Definition

Investigation of anisotropic magnetoresistance in a bilayer system consisting of a metal thin film (thickness W, occupying 0 < z < W) placed on a ferromagnetic dielectric (z < 0).

Model Architecture

Effective Interfacial Hamiltonian

Employs the effective interfacial model of Amin and Stiles:

$H = \frac{p^2}{2m} + V(r) + U_0 \Theta(-z) + \hbar v_F \delta(z)\Gamma_p$

where the interfacial potential is: $\Gamma_p = u_0 + \gamma \sigma \cdot \hat{m} + \lambda \sigma \cdot (\hat{p} \times \hat{z})$

Parameter definitions:

• $u_0$: Interfacial charge transfer parameter
• $\gamma$: Interfacial exchange interaction strength
• $\lambda$: Interfacial Rashba coupling strength
• $\hat{m}$: Unit magnetization vector in the ferromagnet

Scattering Matrix Method

Obtains the reflection matrix by solving the elastic scattering problem:

$\hat{r}_k = \frac{-2\Gamma_k + \kappa + iq}{2\Gamma_k + \kappa - iq}$

where $\kappa = \sqrt{U_0/E_F - q^2}$ and $q = \sqrt{1-k^2}$ is the dimensionless momentum component.

Boltzmann Transport Theory

Employs the semiclassical Boltzmann equation to describe the electron distribution function:

$v_p \cdot \nabla_r \hat{f}(p,r) - eE \cdot \nabla_p \hat{f}(p,r) = -\frac{\hat{f}(p,r) - f_0(\varepsilon_p)}{\tau}$

The distribution function is decomposed as: $\hat{f}(p,r) = f_0(\varepsilon_p) + f_1(p,z) + \hat{f}_2(p,z)$

Technical Innovations

Spin-Filtering Mechanism

When the resonance condition $2u_0 \simeq -\sqrt{U_0/E_F}$ is satisfied, the interfacial scattering phase of one spin channel equals π, resulting in:

• One spin projection undergoing near-specular reflection (minimal momentum loss)
• The other spin projection experiencing strong momentum relaxation

Linear Scaling Relationship

Under optimal conditions, the AMR amplitude is: $\frac{\Delta\rho}{\rho} \approx \frac{\min(|\lambda|, |\gamma|)}{\Phi(2w)E_F\tau}$

This contrasts sharply with the quadratic dependence of conventional SMR.

Experimental Setup

Theoretical Calculation Parameters

• Metal thin film thickness: $W/\ell = 0.1 - 3.0$ ($\ell$ is the mean free path)
• Interfacial exchange parameter: $\gamma = 0.01 - 0.2$
• Rashba coupling strength: $\lambda = 0.01 - 0.2$
• Charge transfer parameter: $u_0\sqrt{E_F/U_0} = -1.0$ to $0.0$

Evaluation Metrics

1. Anisotropic Magnetoresistance Ratio: $\Delta\rho/\rho$
2. Angular Dependence: Forms of $\cos 2\phi$ and $\sin 2\phi$
3. Thickness Dependence: Variation with thin film thickness
4. Spin Current Density: Spatial distribution of $j_z^{(y)}(z)$

Experimental Results

Main Results

AMR Amplitude and Parameter Dependence

• AMR reaches maximum near the resonance condition $2u_0 \simeq -\sqrt{U_0/E_F}$
• Maximum AMR scales linearly with $\min(|\gamma|, |\lambda|)$
• Typical amplitude of $10^{-4} - 10^{-3}$ is consistent with experimental observations

Thickness Dependence

• AMR peaks at $W \approx \ell$
• For $W \gg \ell$, AMR decays as $W^{-1}$
• For $W \ll \ell$, suppressed by classical size effects

Angular Dependence

Verifies standard anisotropic magnetoresistance angular relationships:

• Longitudinal component: $\Delta\rho_\parallel \sim \cos 2\phi$
• Transverse component: $\Delta\rho_\perp \sim \sin 2\phi$

Distinction from SMR

Spin Current Behavior

• Spin current density varies dramatically near the interface (six orders of magnitude)
• Scales as $\lambda^3$ at $z=0$, and as $\lambda$ away from the interface
• Indicates that spin current is non-conserved and unsuitable as a foundation for transport phenomena

Physical Mechanism Comparison

Related Work

Traditional AMR Theory

• Spin Hall Magnetoresistance (SMR): Based on spin Hall effect and inverse spin Hall effect
• Interfacial Spin-Orbit Magnetoresistance: Considers interfacial spin-orbit scattering
• Rashba-Edelstein Magnetoresistance (REMR): Based on interfacial Rashba effect

Orbital Hall Effect

Recently proposed orbital Hall effect provides an additional channel for angular momentum transport, but similarly faces conceptual issues with operator definitions.

Advantages of This Work

• Avoids ambiguities in the spin current concept
• Provides verifiable experimental predictions
• Establishes microscopic scattering theory foundation

Conclusions and Discussion

Main Conclusions

1. Mechanism Verification: The spin-filtering magnetoresistance mechanism fully explains existing experimental observations
2. Quantitative Predictions: Theoretical calculations are quantitatively consistent with experimental thickness and angular dependence
3. Clear Physical Picture: The physical picture based on interfacial scattering is more direct than spin current concepts
4. Experimental Criteria: Provides clear experimental methods to distinguish SFMR from SMR

Limitations

1. Exchange Parameter Origin: The microscopic origin of interfacial exchange parameter $\gamma$ requires further investigation
2. Model Simplification: Employs δ-layer approximation; actual interfaces may be more complex
3. Parameter Range: Theory applies to the parameter range $\gamma, \lambda \ll 1$

Future Directions

1. Interface Engineering: Optimize AMR through controlling interfacial charge transfer and disorder
2. Material Exploration: Search for new material systems with optimal parameter combinations
3. Device Applications: Apply SFMR mechanism to spintronics device design

In-Depth Evaluation

Strengths

1. Theoretical Innovation: Proposes a novel physical mechanism avoiding conceptual issues of existing theories
2. Mathematical Rigor: Based on rigorous scattering theory and Boltzmann transport equations
3. Experimental Relevance: Quantitatively reproduces multiple experimental features
4. Predictive Power: Provides verifiable new experimental predictions

Weaknesses

1. Experimental Verification: Theoretical predictions require direct experimental verification
2. Parameter Determination: Determination of certain interfacial parameters may be challenging
3. Applicability Range: May have high requirements for interface quality and material selection

Impact

1. Academic Value: Provides a new theoretical framework for magnetotransport theory
2. Application Prospects: May guide design of novel spintronics devices
3. Methodological Contribution: Interfacial scattering method can be generalized to other systems

Applicable Scenarios

• High-quality metal/ferromagnet interface systems
• Devices requiring precise control of interfacial parameters
• Applications with special requirements for magnetoresistance anisotropy

References

The paper cites 32 important references covering key works in spin Hall effect, orbital Hall effect, interfacial magnetotransport, and related fields, providing a solid foundation for theoretical development.