On-chip rewritable phase-change metasurface for programmable diffractive deep neural networks
Zarei
Photonic neural networks capable of rapid programming are indispensable to realize many functionalities. Phase change technology can provide nonvolatile programmability in photonic neural networks. Integrating direct laser writing technique with phase change material (PCM) can potentially enable programming and in-memory computing for on-chip photonic neural networks. Sb2Se3 is a newly introduced ultralow-loss phase change material with a large refractive index contrast over the telecommunication transmission band. Compact, low-loss, rewritable, and nonvolatile on-chip phase-change metasurfaces can be created by using direct laser writing on a Sb2Se3 thin film. Here, by cascading multiple layers of on-chip phase-change metasurfaces, an ultra-compact on-chip programmable diffractive deep neural network is demonstrated at the wavelength of 1.55um and benchmarked on two machine learning tasks of pattern recognition and MNIST (Modified National Institute of Standards and Technology) handwritten digits classification and accuracies comparable to the state of the art are achieved. The proposed on-chip programmable diffractive deep neural network is also advantageous in terms of power consumption because of the ultralow-loss of the Sb2Se3 and its nonvolatility which requires no constant power supply to maintain its programmed state.
본 논문은 프로그래밍 가능 회절 심층신경망 구현을 위한 위상변화물질(PCM) 기반 온칩 재기록 가능 메타표면 기술을 제안한다. 직접 레이저 기록 기술과 초저손실 위상변화물질 Sb₂Se₃을 결합하여 소형, 저손실, 재기록 가능 및 비휘발성 온칩 위상변화 메타표면을 구축했다. 다층 온칩 위상변화 메타표면을 계단식으로 연결하여 1.55μm 파장에서 초소형 온칩 프로그래밍 가능 회절 심층신경망을 구현했으며, 패턴 인식 및 MNIST 손글씨 숫자 분류 작업에서 기존 기술 수준의 정확도를 달성했다.